Abstract: An optical structure is provided. The optical structure includes a substrate, a light-emitting element, a glue layer, and a light-adjusting element. The light-emitting element is disposed on the substrate. The glue layer covers the light-emitting element. The light-adjusting element is disposed on the glue layer. Moreover, the refractive index of the glue layer is different from the refractive index of the light-adjusting element.

Abstract: An antenna test system includes a box body, a supporting device, at least one probe device, a signal measuring device, and a moving device. The box body has at least an operation side configured to be opened to allow access to devices inside the box body. The supporting device is disposed in the box body and the antenna circuit to be tested is arranged thereon. The probe device is disposed in the box body and configured to apply an antenna testing signal to the antenna circuit to emit an antenna working signal. The signal measuring device is disposed in the box body to receive the antenna working signal emitted from the antenna circuit. The moving device is disposed in the box body and configured to carry the signal measuring device to maneuver in three directions of X-axis, Y-axis, and Z-axis to receive the antenna working signal in different positions.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a deep trench isolation (DTI) structure disposed in a substrate. A pixel region of the substrate is disposed within an inner perimeter of the DTI structure. A photodetector is disposed in the pixel region of the substrate. A gate electrode structure overlies, at least partially, the pixel region of the substrate. A first gate dielectric structure partially overlies the pixel region of the substrate. A second gate dielectric structure partially overlies the pixel region of the substrate. The gate electrode structure overlies both a portion of the first gate dielectric structure and a portion of the second gate dielectric structure. The first gate dielectric structure has a first thickness. The second gate dielectric structure has a second thickness that is greater than the first thickness.

Abstract: A semiconductor device includes a first fin and a second fin in a first direction and aligned in the first direction over a substrate, an isolation insulating layer disposed around lower portions of the first and second fins, a first gate electrode extending in a second direction crossing the first direction and a spacer dummy gate layer, and a source/drain epitaxial layer in a source/drain space in the first fin. The source/drain epitaxial layer is adjacent to the first gate electrode and the spacer dummy gate layer with gate sidewall spacers disposed therebetween, and the spacer dummy gate layer includes one selected from the group consisting of silicon nitride, silicon oxynitride, silicon carbon nitride, and silicon carbon oxynitride.

Abstract: A semiconductor device includes: a substrate; a channel layer disposed on the substrate, wherein the channel layer is made of GaN; a barrier layer disposed on the channel layer, wherein the barrier layer is made of AlzGa1-zN; and an inserting structure inserted between the channel layer and the barrier layer. The inserting structure includes: a first inserting layer disposed on the channel layer, wherein the first inserting layer is made of AlxGa1-xN; and a second inserting layer disposed on the first inserting layer, wherein the second inserting layer is made of AlyGa1-yN, and y is greater than x. The semiconductor device further includes: a gate electrode disposed on the barrier layer; a source electrode and a drain electrode disposed on the barrier layer and respectively at opposite sides of the gate electrode; and a spike region formed below at least one of the source electrode and the drain electrode.

Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.

Abstract: The present invention relates to a thermistor paste and a manufacturing method thereof. The thermistor paste includes specific contents of thermistor powder, a glass powder, and an organic carrier, in which the organic carrier includes an organic solvent, a binder, and an additive. A thermistor semi-finished product slurry of the present invention has been sintered. The thermistor paste of the present invention excludes a precious metal, such as ruthenium, gold, or platinum, etc., so the production cost can be reduced.

Abstract: A method for producing a sustainable aviation fuel includes (a) subjecting a feedstock containing an oil to a first reaction with hydrogen in the presence of a first catalyst so that the oil is hydrogenated to saturation and deoxygenated, thereby obtaining a first product containing hydrocarbons, the first reaction being carried out at a temperature ranging from 385° C. to 415° C.; and (b) subjecting the first product to a second reaction with hydrogen in the presence of a second catalyst so that the hydrocarbons in the first product are cracked and isomerized, thereby obtaining the sustainable aviation fuel, the second catalyst including a silicoaluminophosphate-11 (SAPO-11) carrier loaded with nickel and citric acid, the nickel being present in an amount ranging from 12 wt % to 30 wt % based on 100 wt % of the second catalyst.

Abstract: A method for producing an energetic gas from carbon dioxide includes the steps of: impregnating a plurality of alumina particles into a nickel-based aqueous solution to form a crude product, followed by subjecting the crude product to a drying treatment and then to a calcination treatment at a temperature ranging from 550° C. to 650° C., so as to obtain a supported catalyst; activating the supported catalyst with hydrogen, so as to obtain an activated supported catalyst; and subjecting hydrogen and carbon dioxide to a methanation reaction at a total gas hourly space velocity ranging from 4000 h?1 to 5000 h?1 in the presence of the activated supported catalyst, so as to form methane serving as an energetic gas.

Abstract: A flow guiding device for a carbon capture system includes a connecting unit and a flow guiding unit connected to the connecting unit. The connecting unit includes a communicating member defining a gas flow channel, a main housing diverging gradually from the communicating member, and a gas rectifier disposed opposite to the communicating member and having a plurality of air holes. The flow guiding unit includes a guiding member defining an flow channel in fluid communication with the gas flow channel and having a plurality of through holes in fluid communication with the flow channel, a main body diverging gradually from the guiding member, and a flow disturbing member disposed at a terminal portion of the main body and having a plurality of flow distributing holes. The main body cooperates with the main housing to define an annular flow channel therebetween that is in fluid communication with the through holes.

Abstract: An optical element driving mechanism is provided, including a fixed part, a movable part, a metallic member and a driving assembly. The fixed part includes a base. The movable part is movably connected to the fixed part, and carries an optical element, the optical element has an optical axis. The metallic member is disposed on the base, and includes an inner electrical connection part and an outer electrical connection part, the inner electrical connection part and the outer electrical connection part are connected to each other. The driving assembly includes at least one driving magnetic element and drives the movable part to move relative to the fixed part.

Abstract: A gaseous fuel production system is adapted for producing a gaseous fuel from an object, and includes at least two adsorbing devices, a mixture space, a first detector, an air extractor pump, and a second detector. The at least two adsorbing devices are adapted for adsorbing a target gas. Each of the mixture space and the air extractor pump is connected downstream of the at least two adsorbing devices. Each of the at least two adsorbing devices is convertible between an adsorbing state, in which the adsorbing device adsorbs the target gas and the first detector measures a first concentration of the target gas in the mixture space, and a desorption state, in which the target gas is extracted from the adsorbing device by the air extractor pump and the second detector measures a second concentration of the target gas in a fluid located downstream of the air extractor pump.

Abstract: Semiconductor devices having improved gate electrode structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a gate structure over a semiconductor substrate, the gate structure including a high-k dielectric layer; an n-type work function layer over the high-k dielectric layer; an anti-reaction layer over the n-type work function layer, the anti-reaction layer including a dielectric material; a p-type work function layer over the anti-reaction layer, the p-type work function layer covering top surfaces of the anti-reaction layer; and a conductive cap layer over the p-type work function layer.

Abstract: Semiconductor devices having improved gate electrode structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a gate structure over a semiconductor substrate, the gate structure including a high-k dielectric layer; an n-type work function layer over the high-k dielectric layer; an anti-reaction layer over the n-type work function layer, the anti-reaction layer including a dielectric material; a p-type work function layer over the anti-reaction layer, the p-type work function layer covering top surfaces of the anti-reaction layer; and a conductive cap layer over the p-type work function layer.

Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.