Abstract: A method for producing a sustainable aviation fuel includes (a) subjecting a feedstock containing an oil to a first reaction with hydrogen in the presence of a first catalyst so that the oil is hydrogenated to saturation and deoxygenated, thereby obtaining a first product containing hydrocarbons, the first reaction being carried out at a temperature ranging from 385° C. to 415° C.; and (b) subjecting the first product to a second reaction with hydrogen in the presence of a second catalyst so that the hydrocarbons in the first product are cracked and isomerized, thereby obtaining the sustainable aviation fuel, the second catalyst including a silicoaluminophosphate-11 (SAPO-11) carrier loaded with nickel and citric acid, the nickel being present in an amount ranging from 12 wt % to 30 wt % based on 100 wt % of the second catalyst.

Abstract: A method for producing an energetic gas from carbon dioxide includes the steps of: impregnating a plurality of alumina particles into a nickel-based aqueous solution to form a crude product, followed by subjecting the crude product to a drying treatment and then to a calcination treatment at a temperature ranging from 550° C. to 650° C., so as to obtain a supported catalyst; activating the supported catalyst with hydrogen, so as to obtain an activated supported catalyst; and subjecting hydrogen and carbon dioxide to a methanation reaction at a total gas hourly space velocity ranging from 4000 h?1 to 5000 h?1 in the presence of the activated supported catalyst, so as to form methane serving as an energetic gas.

Abstract: A flow guiding device for a carbon capture system includes a connecting unit and a flow guiding unit connected to the connecting unit. The connecting unit includes a communicating member defining a gas flow channel, a main housing diverging gradually from the communicating member, and a gas rectifier disposed opposite to the communicating member and having a plurality of air holes. The flow guiding unit includes a guiding member defining an flow channel in fluid communication with the gas flow channel and having a plurality of through holes in fluid communication with the flow channel, a main body diverging gradually from the guiding member, and a flow disturbing member disposed at a terminal portion of the main body and having a plurality of flow distributing holes. The main body cooperates with the main housing to define an annular flow channel therebetween that is in fluid communication with the through holes.

Abstract: An optical element driving mechanism is provided, including a fixed part, a movable part, a metallic member and a driving assembly. The fixed part includes a base. The movable part is movably connected to the fixed part, and carries an optical element, the optical element has an optical axis. The metallic member is disposed on the base, and includes an inner electrical connection part and an outer electrical connection part, the inner electrical connection part and the outer electrical connection part are connected to each other. The driving assembly includes at least one driving magnetic element and drives the movable part to move relative to the fixed part.

Abstract: A gaseous fuel production system is adapted for producing a gaseous fuel from an object, and includes at least two adsorbing devices, a mixture space, a first detector, an air extractor pump, and a second detector. The at least two adsorbing devices are adapted for adsorbing a target gas. Each of the mixture space and the air extractor pump is connected downstream of the at least two adsorbing devices. Each of the at least two adsorbing devices is convertible between an adsorbing state, in which the adsorbing device adsorbs the target gas and the first detector measures a first concentration of the target gas in the mixture space, and a desorption state, in which the target gas is extracted from the adsorbing device by the air extractor pump and the second detector measures a second concentration of the target gas in a fluid located downstream of the air extractor pump.

Abstract: Semiconductor devices having improved gate electrode structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a gate structure over a semiconductor substrate, the gate structure including a high-k dielectric layer; an n-type work function layer over the high-k dielectric layer; an anti-reaction layer over the n-type work function layer, the anti-reaction layer including a dielectric material; a p-type work function layer over the anti-reaction layer, the p-type work function layer covering top surfaces of the anti-reaction layer; and a conductive cap layer over the p-type work function layer.

Abstract: Semiconductor devices having improved gate electrode structures and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a gate structure over a semiconductor substrate, the gate structure including a high-k dielectric layer; an n-type work function layer over the high-k dielectric layer; an anti-reaction layer over the n-type work function layer, the anti-reaction layer including a dielectric material; a p-type work function layer over the anti-reaction layer, the p-type work function layer covering top surfaces of the anti-reaction layer; and a conductive cap layer over the p-type work function layer.

Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.

Abstract: A semiconductor device includes a plurality of active region structures that each protrude upwards in a vertical direction. The active region structures each extend in a first horizontal direction. The active region structures are separated from one another in a second horizontal direction different from the first horizontal direction. A gate structure is disposed over the active region structures. The gate structure extends in the second horizontal direction. The gate structure partially wraps around each of the active region structures. A conductive capping layer is disposed over the gate structure. A gate via is disposed over the conductive capping layer. A dimension of the conductive capping layer measured in the second horizontal direction is substantially greater than a maximum dimension of the gate via measured in the second horizontal direction.

Abstract: A Multi-Access Edge Computing (MEC) system is provided. The MEC system includes a user equipment (UE), an MEC device, and a core network. The MEC device includes a relay User Plane Function (UPF) module, a first UPF module, and a second UPF module. The core network performs a UPF path management corresponding to the UE based on a notification of the MEC device. When the UE attaches to a network, the MEC device establishes an idle session between the UE and the relay UPF module. When the MEC device determines that a service for the UE needs to be switched from the first UPF module to the second UPF module and the second UPF module has not been activated, the MEC device notifies the core network to switch the service for the UE from the first UPF module to the relay UPF module first.

Abstract: The present disclosure provides a semiconductor device and a method of forming the same. The semiconductor device includes a first channel members being vertically stacked, a second channel members being vertically stacked, an n-type work function layer wrapping around each of the first channel members, a first p-type work function layer over the n-type work function layer and wrapping around each of the first channel members, a second p-type work function layer wrapping around each of the second channel members, a third p-type work function layer over the second p-type work function layer and wrapping around each of the second channel members, and a gate cap layer over a top surface of the first p-type work function layer and a top surface of the third p-type work function layer such that the gate cap layer electrically couples the first p-type work function layer and the third p-type work function layer.

Abstract: An optical driving mechanism is provided, for driving an optical element, including: a fixed portion, a movable portion, a driving assembly and a position sensing assembly. The movable portion is movably connected to the fixed portion and includes a holder for sustaining the optical element. The driving assembly is configured to drive the movable portion to move relative to the fixed portion. The position sensing assembly is configured to sense a distance of the movable portion relative to the fixed portion, the position sensing assembly includes a sensing magnetic element and a sensor, wherein the sensing magnetic element is disposed on the movable portion and has a rectangular structure. A direction of a long axis of the rectangular structure extends in a direction that is perpendicular to the optical axis of the optical element, and the direction of the long axis is different from the optical axis direction.

Abstract: A method according to the present disclosure includes providing a substrate that includes a dummy gate stack wrapping over an active region, and a spacer layer extending along sidewalls of the dummy gate stack, selectively removing the dummy gate stack to form a gate trench exposing the active region, depositing a gate dielectric over the active region, depositing at least one work function layer over the gate dielectric layer, depositing a tungsten layer over the at least one work function layer, and depositing a tungsten nitride layer over the tungsten layer.

Abstract: A Multi-Access Edge Computing (MEC) system is provided. The MEC system includes a user equipment (UE), an MEC device, and a core network. The MEC device includes a relay User Plane Function (UPF) module, a first UPF module, and a second UPF module. The core network performs a UPF path management corresponding to the UE based on a notification of the MEC device. When the UE attaches to a network, the MEC device establishes an idle session between the UE and the relay UPF module. When the MEC device determines that a service for the UE needs to be switched from the first UPF module to the second UPF module and the second UPF module has not been activated, the MEC device notifies the core network to switch the service for the UE from the first UPF module to the relay UPF module first.