Abstract: A method includes forming a stack of channel layers and sacrificial layers over a substrate, patterning the stack to form a fin-shape structure, and recessing a portion of the fin-shape structure to form a recess. A top surface of the substrate under the recess is covered at least by a bottommost sacrificial layer of the stack. The method also includes forming inner spacers on terminal ends of the sacrificial layers that are above the bottommost sacrificial layer, depositing an undoped layer in the recess, and forming a doped epitaxial feature over the undoped layer. The undoped layer covers terminal ends of a bottommost channel layer of the stack. The doped epitaxial feature covers terminal ends of the channel layers that are above the bottommost channel layer.

Abstract: A method for manufacturing a semiconductor device includes forming a first fin structure and a second fin structure, wherein an isolation region is located between the fin structures, and wherein a space is located between the fin structures and above the isolation region; depositing a blocking layer over the first fin structure, the isolation region, and the second fin structure, wherein an upper portion of the blocking layer is located above the first fin structure and the second fin structure, and wherein a lower portion of the blocking layer fills the space located between the first fin structure and the second fin structure; removing the upper portion of the blocking layer; and while the lower portion of the blocking layer remains over the isolation region, performing an etch process to recess the first fin structure and the second fin structure.

Abstract: A multi-channel payment method for a multi-channel payment system comprises the payer or the payee who initiated the payment request logs in to the multi-channel payment system; the payer or the payee who initiated the payment request placing an order in the multi-channel payment system, wherein the order comprises a designated payment gateway; the multi-channel payment system determining a predicted fee of the order according to the designated payment gateway, past order records, and a real-time exchange rate; the multi-channel payment system performing an anti-money laundering verification of the order; the payer reviewing the order and the predicted fee through a multiple auditing method; and the multi-channel payment system executing payment from the payer to the payee according to the order and the designated payment gateway, and storing a payment detail of the order.

Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.

Abstract: A semiconductor chip includes a first intellectual property block. There are a second intellectual property block and a third intellectual property block around the first intellectual property block. There is a multiple metal layer stack over the first intellectual property block, the second intellectual property block, and the third intellectual property block. An interconnect structure is situated in the upper portion of the multiple metal layer stack. The interconnect structure is configured for connecting the first intellectual property block and the second intellectual property block. In addition, at least a part of the interconnect structure extends across and over the third intellectual property block.

Abstract: A hot spot defect detecting method and a hot spot defect detecting system are provided. In the method, hot spots are extracted from a design of a semiconductor product to define a hot spot map comprising hot spot groups, wherein local patterns in a same context of the design yielding a same image content are defined as a same hot spot group. During runtime, defect images obtained by an inspection tool performing hot scans on a wafer manufactured with the design are acquired and the hot spot map is aligned to each defect image to locate the hot spot groups. The hot spot defects in each defect image are detected by dynamically mapping the hot spot groups located in each defect image to a plurality of threshold regions and respectively performing automatic thresholding on pixel values of the hot spots of each hot spot group in the corresponding threshold region.

Abstract: A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.

Abstract: A bonding structure that may be used to form 3D-IC devices is formed using first oblong bonding pads on a first substrate and second oblong bonding pads one a second substrate. The first and second oblong bonding pads are laid crosswise, and the bond is formed. Viewed in a first cross-section, the first bonding pad is wider than the second bonding pad. Viewed in a second cross-section at a right angle to the first, the second bonding pad is wider than the first bonding pad. Making the bonding pads oblong and angling them relative to one another reduces variations in bonding area due to shifts in alignment between the first substrate and the second substrate. The oblong shape in a suitable orientation may also be used to reduce capacitive coupling between one of the bonding pads and nearby wires.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.

Abstract: A probe head includes upper, middle and lower dies having upper, middle and lower guiding holes respectively, and a plurality of spring probes. The spring probe includes upper and lower abutting sections disposed in the upper and lower guiding holes, a spring section connecting the upper and lower abutting sections, and a barrel disposed on the periphery of the spring section and inserted in the middle guiding hole. The spring probes include adjacent first and second probes whose barrels has first and second outer diameters and are accommodated in first and second middle guiding holes having first and second widths. The difference between the first width and outer diameter and/or the difference between the second width and outer diameter is larger than or equal to 10 micrometers, and/or the difference between the first and second outer diameters is larger than or equal to 5 ?m.

Abstract: A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.

Abstract: In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.

Abstract: A device structure according to the present disclosure may include a first die having a first substrate and a first interconnect structure, a second die having a second substrate and a second interconnect structure, and a third die having a third interconnect structure and a third substrate. The first interconnect structure is bonded to the second substrate via a first plurality of bonding layers. The second interconnect structure is bonded to the third interconnect structure via a second plurality of bonding layers. The third substrate includes a plurality of photodiodes and a first transistor. The second die includes a second transistor having a source connected to a drain of the first transistor, a third transistor having a gate connected to drain of the first transistor and the source of the second transistor, and a fourth transistor having a drain connected to the source of the third transistor.

Abstract: A radar signal processing system with a self-interference cancelling function includes an analog front end (AFE) processor, an analog to digital converter (ADC), an adaptive interference canceller (AIC), and a digital to analog converter (DAC). The AFE processor receives an original input signal and generates an analog input signal. The ADC converts the analog input signal to a digital input signal. The AIC generates a digital interference signal digital interference signal by performing an adaptive interference cancellation process according to the digital input signal. The DAC converts the digital interference signal to an analog interference signal. Finally, the analog interference signal is fed back to the AFE and cancelled from the original input signal in the AFE processor while performing the front end process, reducing the interference of the static interference from the leaking of a close-by transmitter during the front end process.

Abstract: Examples of an integrated circuit with gate cut features and a method for forming the integrated circuit are provided herein. In some examples, a workpiece is received that includes a substrate and a plurality of fins extending from the substrate. A first layer is formed on a side surface of each of the plurality of fins such that a trench bounded by the first layer extends between the plurality of fins. A cut feature is formed in the trench. A first gate structure is formed on a first fin of the plurality of fins, and a second gate structure is formed on a second fin of the plurality of fins such that the cut feature is disposed between the first gate structure and the second gate structure.

Abstract: A semiconductor device according to embodiments of the present disclosure includes a first die including a first bonding layer and a second die including a second hybrid bonding layer. The first bonding layer includes a first dielectric layer and a first metal coil embedded in the first dielectric layer. The second bonding layer includes a second dielectric layer and a second metal coil embedded in the second dielectric layer. The second hybrid bonding layer is bonded to the first hybrid bonding layer such that the first dielectric layer is bonded to the second dielectric layer and the first metal coil is bonded to the second metal coil.

Abstract: An RRAM structure includes a dielectric layer. A bottom electrode, a resistive switching layer and a top electrode are disposed from bottom to top on the dielectric layer. A spacer is disposed at sidewalls of the bottom electrode, the resistive switching layer and the top electrode. The spacer includes an L-shaped spacer and a sail-shaped spacer. The L-shaped spacer contacts the sidewall of the bottom electrode, the sidewall of the resistive switching layer and the sidewall of the top electrode. The sail-shaped spacer is disposed on the L-shaped spacer. A metal line is disposed on the top electrode and contacts the top electrode and the spacer.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor including first chip and a second chip. The first chip includes a first substrate, a plurality of photodetectors disposed in the first substrate, a first interconnect structure disposed on a front side of the first substrate, and a first bond structure disposed on the first interconnect structure. The second chip underlies the first chip. The second chip includes a second substrate, a plurality of semiconductor devices disposed on the second substrate, a second interconnect structure disposed on a front side of the second substrate, and a second bond structure disposed on the second interconnect structure. A first bonding interface is disposed between the second bond structure and the first bond structure. The second interconnect structure is electrically coupled to the first interconnect structure by way of the first and second bond structures.