Abstract: The disclosure provides an alternator and a rectifier thereof. The rectifier includes a transistor and a gate driving circuit. A control end of the transistor receives a gate voltage. The gate driving circuit generates the gate voltage according to a voltage difference between an input voltage and a rectified voltage. The gate driving circuit detects an initial time point when the voltage difference is smaller than a first preset threshold voltage, provides the gate voltage to turn on the transistor during a first time period after the initial time point, and sets the voltage difference to be equal to a first reference voltage. The gate driving circuit sets the voltage difference to be equal to a second reference voltage through adjusting the gate voltage during a second time period after the first time period.

Abstract: The present invention relates to a non-invasive positioning system for screwing and fixing a bone, where a intramedullary nail is inserted to marrow of the bone, and the intramedullary nail comprises a wall and at least one through-hole through the wall for screwing and fixing by at least one corresponding set screw, the system comprises: an in vitro locator having at least one light source to emit a laser with a wavelength to the muscle tissue to form an incident light and running through the muscle tissue and the bone to form a penetrated light, an optical holder having an optical lens and a positioning ring portion for removably disposing the optical lens, wherein the focusing spot of the incident light, the focusing spot of the penetrated light, and the at least one through-hole are aligned in a line to confirm a linear position for screwing and fixing the intramedullary nail.

Abstract: The present invention discloses a resonant wireless power transmitter circuit, which has an input impedance. The resonant wireless power transmitter circuit includes: a driver circuit coupled with a power supply, which includes at least a power switch; a switching resonant control circuit coupled with the driver circuit, such that the driver operates at a pre-determined or a variable resonant frequency; an adjustable impedance matching circuit coupled with the driver circuit, which includes at least a varactor; a transmitter circuit coupled with the impedance matching circuit and the driver circuit, which includes at least a transmitter coil; and an impedance control circuit coupled with the adjustable impedance matching circuit and the driver circuit, which provides an impedance control signal to control the reactance of the varactor, such that the input impedance of the resonant wireless power transmitter circuit is matched at the pre-determined or the variable resonant frequency.

Abstract: A wafer transport device is moved on a transport rail, and stopped above a load port having a top surface. A light beam is projected onto the top surface of the load port, and image of the top surface is and the light beam is captured. A position of the hoist unit of the wafer transport device is aligned with respect to a position of the load port according to the image. The hoist unit is lowered toward the load port.

Abstract: A projection apparatus and its operation method are provided. The projection apparatus includes a light-emitting device, a driving circuit coupled to the light-emitting device, and a control circuit receiving at least one video frame and analyzing color content of the at least one video frame. According to at least one control signal, the driving circuit drives the light-emitting device to generate a projected beam. The control circuit selects a highlight mode or a normal mode as a selected mode according to the color content and correspondingly sets at least one control signal to the driving circuit according to the selected mode. A brightness of the projected beam of the light-emitting device in the highlight mode is greater than that in the normal mode.

Abstract: A polarizer substrate includes a substrate, an organic planarization layer, an inorganic buffer layer, and a plurality of strip-shaped polarizer structures. The organic planarization layer is located on the substrate. The inorganic buffer layer is located on the organic planarization layer. The inorganic buffer layer has a plurality of trenches located on a first surface. The trenches do not penetrate through the inorganic buffer layer. The strip-shaped polarizer structures are located on the first surface of the inorganic buffer layer. Each of the trenches is located between two adjacent polarizer structures. A display panel is also provided.

Abstract: A device includes a dielectric layer, an interlayer metal pad in the dielectric layer, a first capacitor over the interlayer metal pad, and a second capacitor over the dielectric layer. The first capacitor includes a first bottom capacitor electrode over and in contact with the interlayer metal pad, a first top capacitor electrode, and a first inter-electrode dielectric layer between the first bottom capacitor electrode and the first top capacitor electrode. The second capacitor includes a second bottom capacitor electrode over and in contact with the dielectric layer, a second top capacitor electrode, and a second inter-electrode dielectric layer between the second bottom capacitor electrode and the second top capacitor electrode.

Abstract: The image sensing device includes a semiconductor substrate, an interconnection layer, a radiation-sensing region and an isolation structure. The semiconductor substrate has a front surface and a back surface. The interconnection layer is disposed over the front surface of the semiconductor substrate. The radiation-sensing region is disposed in the semiconductor substrate. The isolation structure is disposed on the back surface of the semiconductor substrate. The isolation structure includes a trench and an etch stop layer. The trench extends from the back surface of the semiconductor substrate. The etch stop layer is disposed along the trench. An etch selectivity of a silicon oxide film to the etch stop layer is greater than a predetermined value.

Abstract: A polarizer substrate and manufacturing method thereof are provided. The polarizer substrate includes a substrate, a plurality of polarizer structures, a plurality of barrier structures, and a passivation layer. The polarizer structures are disposed on the substrate. Each of the polarizer structures includes a wire-grid and a capping structure disposed on the wire-grid. The barrier structures are disposed on the capping structures and not contacting with the side walls of the wire-grids. A gap between two adjacent barrier structures is smaller than a gap between two adjacent wire-grids. The passivation layer is disposed on the barrier structures.

Abstract: A package structure includes a semiconductor die and a redistribution circuit structure. The redistribution circuit structure is disposed on and electrically connected to the semiconductor die and includes a patterned conductive layer, a dielectric layer, and an inter-layer film. The dielectric layer is disposed on the patterned conductive layer. The inter-layer film is sandwiched between the dielectric layer and the patterned conductive layer, and the patterned conductive layer is separated from the dielectric layer through the inter-layer film.

Abstract: The present invention provides vaccines comprising carbohydrate antigen conjugated to a diphtheria toxin (DT) as a carrier protein, wherein the ratio of the number of carbohydrate antigen molecule to the carrier protein molecule is higher than 5:1. Also disclosed herein is a novel saponin adjuvant and methods to inhibit cancer cells, by administering an effective amount of the vaccine disclose herein.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of photodiodes is formed from a front-side of a substrate. A plurality of boundary deep trench isolation (BDTI) trenches having a first depth and a plurality of multiple deep trench isolation (MDTI) trenches having a second depth are formed from a back-side of the substrate. A stack of dielectric layers is formed in the BDTI trenches and the MDTI trenches. A plurality of color filters is formed overlying the stack of dielectric layers corresponding to the plurality of photodiodes.

Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within a substrate and respectively comprising a photodiode. The photodiode comprises a doped layer with a first doping type and an adjoining region of the substrate with a second doping type that is different than the first doping type. A boundary deep trench isolation (BDTI) structure is disposed between adjacent pixel regions. A multiple deep trench isolation (MDTI) structure overlies the doped layer of the photodiode. The MDTI structure comprises a stack of dielectric layers lining sidewalls of a MDTI trench. A plurality of color filters is disposed at the back-side of the substrate corresponding to the respective photodiode of the plurality of pixel regions and overlying the MDTI structure.

Abstract: Disclosed herein is an immunoconjugate comprising an antibody, a functional motif, and a linker connecting the functional motif to the antibody. According to embodiments of the present disclosure, the antibody may recognize tumor-associated antigens (TAAs), and serves as a targeting module for delivering the functional motif connected therewith to the tumor cells thereby inhibiting tumor growth or detecting the distribution of tumor cells. Also disclosed herein are methods of treating cancers and methods of diagnosing cancers by use of the present immunoconjugate.

Abstract: A semiconductor device includes a first circuit structure and a second circuit structure. The first circuit structure has a first line terminal. The second circuit structure has a second line terminal. The first line terminal and the second line terminal are formed in a first circuit layer but separated by a gap. A conductive structure is forming in a second circuit layer above or below the first circuit layer, to electrically connect the first line terminal and the second line terminal.

Abstract: The present invention provides vaccines comprising carbohydrate antigen conjugated to a diphtheria toxin (DT) as a carrier protein, wherein the ratio of the number of carbohydrate antigen molecule to the carrier protein molecule is higher than 5:1. Also disclosed herein is a novel saponin adjuvant and methods to inhibit cancer cells, by administering an effective amount of the vaccine disclose herein.

Abstract: An integrated circuit includes a stacked MIM capacitor and a thin film resistor and methods of fabricating the same are disclosed. A capacitor bottom metal in one capacitor of the stacked MIM capacitor and the thin film resistor are substantially at the same layer of the integrated circuit, and the capacitor bottom metal and the thin film resistor are also made of substantially the same materials. The integrated circuit with both of a stacked MIM capacitor and a thin film resistor can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.

Abstract: An inverter structure includes a first fin structure and a second fin structure respectively disposed within a P-type transistor region and an N-type transistor region on a substrate. Agate line is disposed on the substrate. A first end of the gate line is within the P-type transistor region, and a second end of the gate line is within the N-type transistor region. Two dummy gate lines are disposed at two sides of the gate line. Each dummy gate line has a third end within the P-type transistor region, and a fourth end within the N-type transistor region. A distance between the first end and the first fin structure is greater than a distance between the third end and the first fin structure. The distance between the second end and the second fin structure is smaller than a distance between the fourth end and the second fin structure.

Abstract: A liquid cooled heat dissipation device including a housing, at least two cooling fin modules, an input pipe, and an output pipe is provided. The housing has an accommodation space. The at least two cooling fin modules are disposed in the accommodation space. The input pipe is disposed on the top plate, the front plate, the rear plate, or one of the side plates of the housing and communicates with the accommodation space. The output pipe is disposed on the top plate, the front plate, the rear plate, or the other one of the side plates of the housing and communicates with the accommodation space. The at least two cooling fin modules have different arrangement densities and different fin thicknesses.

Abstract: An electronic device and a hinge assembly thereof are provided. The hinge assembly has a first fixing block, a second fixing block, a first linking rod and a second linking rod. The first fixing block has a first end and a second end. The second fixing block has a third end and a fourth end. The first linking rod has a fifth end slidably and rotatably connected to the second end and a sixth end rotatably connected to the fourth end. The second linking rod has a seventh end slidably and rotatably connected to the fourth end and an eighth end rotatably connected to the second end. The sixth end has a groove portion and a first inclined surface, and the eighth end has a second inclined surface contacting the first inclined surface.