Abstract: A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A metal grid overlies the semiconductor substrate and is made up of metal grid segments that surround outer perimeters of the photodiodes, respectively, such that first openings within the metal grid overlie the photodiodes, respectively. A low-n grid is made up of low-n grid segments that surround the respective outer perimeters of the photodiodes, respectively, such that second openings within the low-n grid overlie the photodiodes, respectively. Color filters are arranged in the first and second openings of the photodiodes and have a refractive index greater than a refractive index of the low-n grid. A substrate isolation grid extends into the semiconductor substrate and is made up of isolation grid segments that surround outer perimeters of the photodiodes, respectively. A method for manufacturing the BSI pixel sensors is also provided.

Abstract: A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A composite grid includes a metal grid and a low refractive index (low-n) grid. The metal grid includes first openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. The low-n grid includes second openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. Color filters are arranged in the first and second openings of the corresponding photodiodes and have a refractive index greater than a refractive index of the low-n grid. Upper surfaces of the color filters are offset relative to an upper surface of the composite grid. A method for manufacturing the BSI pixel sensors is also provided.

Abstract: A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A composite grid includes a metal grid and a low refractive index (low-n) grid. The metal grid includes first openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. The low-n grid includes second openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. Color filters are arranged in the first and second openings of the corresponding photodiodes and have a refractive index greater than a refractive index of the low-n grid. Upper surfaces of the color filters are offset relative to an upper surface of the composite grid. A method for manufacturing the BSI pixel sensors is also provided.

Abstract: An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.

Abstract: An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.

Abstract: An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The image sensor chip includes a substrate supporting an integrated circuit (IC) configured to sense incident light. The sidewall interconnect structure is arranged along a sidewall of the substrate and electrically coupled with the IC. A method for manufacturing the image sensor chip and an image sensor package including the image sensor chip are also provided.

Abstract: An image sensor includes a substrate, dual-waveband photosensitive devices, at least one infrared photosensitive device, a transparent dielectric layer, at least one infrared band-pass filter, a color filter layer and a micro-lens layer. The dual-waveband photosensitive devices are disposed in the substrate, and each dual-waveband photosensitive device is configured to sense an infrared light and one visible light. The infrared photosensitive device is disposed in the substrate, in which the dual-waveband photosensitive devices and the infrared photosensitive device are arranged in an array. The transparent dielectric layer is disposed over the dual-waveband photosensitive devices and the infrared photosensitive device. The infrared band-pass filter is disposed in the transparent dielectric layer and corresponds to the infrared photosensitive device. The color filter layer is disposed to cover the transparent dielectric layer and the infrared band-pass filter.

Abstract: An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.

Abstract: In some embodiments in accordance with the present disclosure, an image sensor is provided. The image sensor includes a substrate having a body. The body includes a first surface and a second surface opposite to the first surface. A through via is configured to extend from the first surface to the second surface. An intermediate layer is disposed over the body and configured to cover the through via. An image sensing device is disposed over the intermediate layer. In addition, a lens structure is disposed over the substrate, the intermediate layer and the image sensing device. In certain embodiments, the image sensing device is curved. In some embodiments, the image sensing device includes a semiconductor chip having a CMOS image sensing array.

Abstract: The present invention discloses a bridge structural safety monitoring system and a bridge structural safety monitoring method. The method includes the steps of capturing an image of a monitoring area of a bridge to create a standard image of the bridge operated at normal conditions, capturing images of the monitoring area of the bridge continuously to obtain monitoring images, comparing the standard image with the monitoring image to obtain a displacement correlation coefficient of the monitoring area of the bridge, and transmitting the displacement correlation coefficient to a central console, such that the central console can determine the using condition of the bridge according to the displacement correlation coefficient.

Abstract: The present invention discloses a bridge structural safety monitoring system and a bridge structural safety monitoring method. The method includes the steps of capturing an image of a monitoring area of a bridge to create a standard image of the bridge operated at normal conditions, capturing images of the monitoring area of the bridge continuously to obtain monitoring images, comparing the standard image with the monitoring image to obtain a displacement correlation coefficient of the monitoring area of the bridge, and transmitting the displacement correlation coefficient to a central console, such that the central console can determine the using condition of the bridge according to the displacement correlation coefficient.

Abstract: A cooling system for a hinged portable computing device is provided having a first passive heat transfer device is carried within a first housing portion of the computer and a second passive heat transfer device that is carried within a second housing portion of the portable computer. A hinge structure interconnects the first and second housing portions for pivotal movement relative to one another, where the hinge structure includes a heat conductive first gudgeon having a pintle and a thermal interface block. The thermal interface block is disposed in the second housing portion and connected in thermal communication with the second first passive heat transfer device. A heat conductive second gudgeon is also provided having a journal and a thermal interface block.

Abstract: A cooling system for a hinged portable computing device is provided having a first passive heat transfer device is carried within a first housing portion of the computer and a second passive heat transfer device that is carried within a second housing portion of the portable computer. A hinge structure interconnects the first and second housing portions for pivotal movement relative to one another, where the hinge structure includes a heat conductive first gudgeon having a pintle and a thermal interface block. The thermal interface block is disposed in the second housing portion and connected in thermal communication with the second first passive heat transfer device. A heat conductive second gudgeon is also provided having a journal and a thermal interface block.