Abstract: An UV photo-detector having a GaN-based interlayer is provided. Because of the excellent insulating property of the GaN-based interlayer and an excellent Schottky contact between the GaN-based interlayer and electrodes of the device, the leakage current of the device is substantially reduced. For example, the material of the GaN-based interlayer includes AlxInyGa1?x?yN, in which x?0, y?0, 1?x+y. The GaN-based interlayer described above is manufactured without requiring a high temperature treatment process after the epitaxy process, and thus the process flow is simplified. Therefore, an UV photodetector having an excellent performance is obtained.

Abstract: An organic light-emitting display is provided. The organic light-emitting display has a power line divided into multiple sets with a voltage terminal attached to the center of each power line set. Furthermore, all the voltage terminals are coupled to a power supply through a low resistance conductive material medium. With this setup, brightness imbalance between neighboring pixels is minimized.

Abstract: A scissors assembly includes a main body, a jaw plate, and an angle adjusting base. Thus, the scissors assembly has a simplified construction and can be positioned efficiently. In addition, the scissors assembly can adjust the cutting angle easily and conveniently. Further, the scissors assembly is operated easily and conveniently.

Abstract: A sealing structure and a method of making the same. The sealing structure is disposed on an organic light emitting display panel having a substrate and an organic light emitting display unit thereon. The sealing structure includes a passivation structure, a container, and a sealing agent. The passivation layer covers the substrate and the organic light emitting display unit and has a sealing slot extending through to the substrate surface. The seal agent is disposed in the bottom of the sealing slot for combining the container with the substrate surface in the bottom of the sealing slot.

Abstract: A novel method of using lasers for generating driving energy for activating P-type compound semiconductor films and reducing the resistivity thereof. The P-type compound semiconductor films are made from III-V nitrides or II-VI group compounds doped with P-type impurity. The present invention can be carried out in the ambience of atmosphere rather than in the ambience of nitrogen gas. In addition, adjusting the power and focusing distance of a laser source, and the power density can change the time required by the activating process.

Abstract: A novel method of using rapid variation of temperature for generating driving energy to activating P-type compound semiconductor films and reducing the resistivity thereof. The P-type compound semiconductor films are made from III-V nitrides or II-VI group compounds doped with P-type impurity. In addition, the time duration when the ambient temperature is greater than a certain temperature during the annealing process is limited to be less than one minute. Therefore, the optoelectronic performance of the P-type compound semiconductor films will not degrade because the duration of annealing process is decreased.

Abstract: A light-emitting device using a vacuum doughnut to serve as a current blocking layer is disclosed. The light-emitting device comprises: a substrate of a first conductivity type; a buffer layer formed on the substrate; a double heterostructure layer comprising a first cladding layer, an active layer and a second cladding layer, formed on the buffer layer; and a cap layer of a second conductivity type formed on the double heterostructure layer. A vacuum doughnut is formed between the active layer and an electrode formed on the cap layer to block a current flowing from the electrode formed on the cap layer so that the current flows through a region of the double heterostructure layer that is uncovered by the electrode. Furthermore, the vacuum doughnut can also be formed in the second cladding layer instead of forming in the cap layer.