Abstract: A method of manufacturing a silicon carbide semiconductor power device is provided. In the method, the power device in high voltage (HV) region and CMOS device in the low voltage (LV) region are formed together, so the cost and time can be saved efficiently. First, a first drift layer is formed on a substrate, and then a shielding region is formed in the first drift layer. The shielding region includes a continuous region in the LV region. Then, a second drift layer is formed on the first drift layer. A pick-up region is formed in the second drift layer, wherein the pick-up region connects to the continuous region of the shielding region, and then NMOS and PMOS in the LV region and the power device in HV region are formed simultaneously. NMOS and PMOS are surrounded by the pick-up region and the continuous region, thereby minimizing body effect.

Abstract: A short-circuit protection circuitry is adapted for a power transistor. The short-circuit protection circuitry includes a first diode, a first resistor, a voltage dividing circuit, a gate voltage generator, a pull-down circuit, and a control signal generator. The first diode is coupled to a drain of the power transistor. The first resistor is coupled between the first diode and the power transistor. The voltage dividing circuit is coupled between a gate and a source of the power transistor to generate a dividing voltage. The gate voltage generator provides a gate voltage to the gate of the power transistor according to a first driving signal and a second driving signal. The pull-down circuit pulls down the gate voltage according to a control signal. The control signal generator generates the control signal according to the first driving signal, a voltage on the anode of the first diode and the dividing voltage.

Abstract: A semiconductor power device includes a substrate, a drift layer disposed on the substrate, buried doped regions, gates, a gate insulation layer, well regions, source regions, and well contact regions. The buried doped regions are in the drift layer and parallel to each other, and each of the buried doped regions is a predetermined distance from an upper surface of the drift layer. The gates are on the drift layer and directly above the buried doped regions. The gate insulation layer is between the drift layer and the gates. The well regions are in the drift layer between the gates and separated from the buried doped regions, wherein the well regions and the buried doped regions are electrically connected. The source regions are within the well regions between the gates, and each of the well contact regions passes through the source region and contacts with the well.

Abstract: A silicon carbide semiconductor power transistor includes a substrate made of SiC, a drift layer on a plane of the substrate, well regions in the drift layer, source regions within the well regions, gates on the drift layer, a gate insulation layer between the drift layer and each of the gates, and well pick-up regions in the drift layer. V-grooves are formed in the drift layer, and a bottom and sidewalls of each of the V-grooves is surround by each of the well regions. The bottom of each of the V-grooves is in direct contact with each of the source regions. The gates are between the V-grooves and extend to the sidewalls of the V-grooves on both sides thereof. The well pick-up regions are below the bottom of each of the V-grooves, and each of the well pick-up regions passes through the source regions and contacts with the well regions.

Abstract: A silicon carbide semiconductor power transistor and a method of manufacturing the same. The silicon carbide semiconductor power transistor of the disclosure includes a substrate made of silicon carbide (SiC), a drift layer disposed on the substrate, a gate layer formed on the drift layer, a plurality of first and second well pick-up regions disposed in the drift layer, a plurality of source electrodes, and a plurality of contacts. A plurality of V-grooves is formed in the drift layer. A first opening is formed in the gate layer at a bottom of each of the V-grooves, and a second opening is formed in the gate layer at a top of the drift layer between the V-grooves. The plurality of contacts is disposed inside the second opening to be in direct contact with the second well pick-up regions.

Abstract: A merged PiN Schottky (MPS) diode includes a substrate, a first epitaxial layer of a first conductivity type, doped regions of a second conductivity type, a second epitaxial layer of the first conductivity type, and a Schottky metal layer. The first epitaxial layer is disposed on the first surface of the substrate. The doped regions are disposed in a surface of the first epitaxial layer, wherein the doped regions consist of first portions and second portions, the first portions are electrically floating, and the second portions are electrically connected to a top metal. The second epitaxial layer is disposed on the surface of the first epitaxial layer, wherein trenches are formed in the second epitaxial layer to expose the second portions of the doped regions. The Schottky metal layer is conformally deposited on the second epitaxial layer and the exposed second portions of the doped regions.

Abstract: A real-world view display method applied to a video pass-through system, wherein the video pass-through system includes at least one grayscale camera, a color camera and at least one processor. The real-world view display method includes: by the at least one grayscale camera, capturing at least one grayscale image of a physical environment for generating a grayscale pass-through view corresponding to the physical environment; by the color camera, capturing at least one color image of the physical environment; and by the at least one processor, processing the grayscale pass-through view according to the at least one color image to render a color pass-through view in an immersive content, wherein the color pass-through view is corresponding to the physical environment.

Abstract: A wide-band gap semiconductor device and a method of manufacturing the same are provided. The wide-band gap semiconductor device of the disclosure includes a substrate, an epitaxial layer, an array of merged PN junction Schottky (MPS) diode, and an edge termination area surrounding the array of MPS diode. The epitaxial layer includes a first plane, a second plane, and trenches between the first plane and the second plane. The array of MPS diode is formed in the first plane of the epitaxial layer. The edge termination area includes a floating ring region having floating rings formed in the second plane of the epitaxial layer, and a transition region between the floating ring region and the array of MPS diode. The transition region includes a PIN diode formed in the plurality of trenches and on the epitaxial layer between the trenches.

Abstract: Provided is a cutting speed planning system including a graphic preprocessing engine, a first speed planning engine, an included angle calculation engine, a second speed planning engine and a speed determination engine. The graphic preprocessing engine substitutes a simplified cutting route for a plurality of short straight paths of a graphic path. The first speed planning engine calculates a reasonable maximum cutting speed of each cutting route. The included angle calculation engine calculates the included angle between two adjacent ones of the cutting routes. The second speed planning engine adjusts the terminal cutting speed and the initial cutting speed of the cutting routes. The speed determination engine performs speed planning on the cutting routes according to digital control system period time. A cutting speed planning method and a non-transitory storage medium are further provided.

Abstract: An one-time programmable memory cell includes: an upper electrode; an insulating layer beneath the upper electrode; and a lower electrode with electrical field enhancement structure beneath the insulating layer, wherein the electrical field enhancement structure has a least one tip portion. The one-time programmable memory cell also includes a shallow trench isolation region, disposed adjacent to the insulating layer and the lower electrode, wherein the electrical field enhancement structure is surrounded by the shallow trench isolation region and the upper electrode partially covers the shallow trench isolation region.

Abstract: An one-time programmable memory cell includes: an upper electrode; an insulating layer beneath the upper electrode; and a lower electrode with electrical field enhancement structure beneath the insulating layer, wherein the electrical field enhancement structure has a least one tip portion. The one-time programmable memory cell also includes a shallow trench isolation region, disposed adjacent to the insulating layer and the lower electrode, wherein the electrical field enhancement structure is surrounded by the shallow trench isolation region and the upper electrode partially covers the shallow trench isolation region.

Abstract: A reaction gas supply equipment of an inductive coupled plasma mass spectrometer comprises an ammonia supply end and a helium supply end and a reaction gas supply equipment, which is supplied with an ammonia supply end and a helium supply end, and the reaction gas supply equipment is provided with an ammonia mass flow meter to adjust the flow of ammonia and helium mass flow meter to adjust the flow of helium; the ammonia mass flow meter and helium mass flow meter are adjusted by the proportion of reaction gas specified by the inductive coupled plasma spectrometer, and ammonia gas is mixed with helium gas to form reaction gas, which is then provided to the inductive coupled plasma mass spectrometer; through the technical means of the prevent invention, several advantages such as the protection of detection instrument and the reduction of cost of reaction gas can be achieved.

Abstract: An apparatus for producing 3D point-cloud model of physical objects includes a rotatable platform (11), multiple patterns asymmetrically arranged on the rotatable platform (11), a background curtain (13), and an image capturing unit (12) arranged facing toward the background curtain (13). A producing method includes: placing an object (2) to be scanned on the rotatable platform (11); setting a capturing amount during one-time rotation operation; controlling the rotatable platform (11) to perform the rotation operation, and controlling the image capturing unit (12) to capture corresponding images during the rotation operation according to the capturing amount, wherein each image includes the entire object (2) and multiple of the patterns, and records corresponding global coordinates; and, performing matching on multiple features of each of the images, and constructing a 3D point-cloud model of the object (2) according to a matching result of the features and the global coordinates of each of the images.

Abstract: An apparatus for producing 3D point-cloud model of physical objects includes a rotatable platform (11), multiple patterns asymmetrically arranged on the rotatable platform (11), a background curtain (13), and an image capturing unit (12) arranged facing toward the background curtain (13). A producing method includes: placing an object (2) to be scanned on the rotatable platform (11); setting a capturing amount during one-time rotation operation; controlling the rotatable platform (11) to perform the rotation operation, and controlling the image capturing unit (12) to capture corresponding images during the rotation operation according to the capturing amount, wherein each image includes the entire object (2) and multiple of the patterns, and records corresponding global coordinates; and, performing matching on multiple features of each of the images, and constructing a 3D point-cloud model of the object (2) according to a matching result of the features and the global coordinates of each of the images.

Abstract: A secure payment device having first and second modes is provided. In the second mode, a payment procedure is activated to receive data of a payment member for a secure payment. The secure payment device includes a touch screen group, a payment unit, a central processing unit and a secure microprocessor unit. The touch screen group displays an operation interface and a secure payment interface. In the first mode, the operation interface receives a first operation instruction via the operation interface. In the second mode, the secure payment interface obtains the data of the payment member by the payment unit, receive the second operation instruction via the secure payment interface, and activate the payment function based on a comparing result of the authentication information and the data of the payment member. A secure payment method for the aforementioned secure payment device is also provided.

Abstract: Disclosed is an electric device control system comprising an electric device control system and an intelligent remote control. Each electric device is electrically connected to a light sensing device, wherein the electric device is controlled by the light sensing device. The intelligent remote control comprises a light transmitter, a first wireless communication unit and a first controller. The light transmitter provides a high energy level visible light beam to a light sensing device, to make the light sensing device provide a wireless identification signal. The first wireless communication unit receives the wireless identification signal. The first controller is electrically connected to the first wireless communication unit. The first controller controls a coding set to switch according to the wireless identification signal, and controls the first wireless communication unit according to the coding set to output a wireless control signal to the light sensing device for controlling the electric device.

Abstract: The invention provides a voltage regulator including a transient voltage suppressor. The transient voltage suppressor includes N first transistors and N semiconductor units. The N first transistors are coupled between a reference ground and N pads respectively, and the N transistors are controlled by a voltage on a reference power line. The N semiconductor units are coupled between the reference ground and the N pads respectively, or coupled between the reference power line and the N pads respectively. N is a positive integer.

Abstract: The present disclosure provides a rectifier. The rectifier includes a N-type epitaxial layer, a plurality of P-type diffusion regions and a plurality of N-type diffusion regions. The P-type diffusion regions are disposed in the N-type epitaxial layer, and the N-type diffusion regions are respectively disposed in the P-type diffusion regions. Wherein, the P-type diffusion regions are electronically coupled to the N-type diffusion regions.

Abstract: The invention provides a voltage regulator including a transient voltage suppressor. The transient voltage suppressor includes N first transistors and N semiconductor units. The N first transistors are coupled between a reference ground and N pads respectively, and the N transistors are controlled by a voltage on a reference power line. The N semiconductor units are coupled between the reference ground and the N pads respectively, or coupled between the reference power line and the N pads respectively. N is a positive integer.

Abstract: The present disclosure provides a rectifier. The rectifier includes a N-type epitaxial layer, a plurality of P-type diffusion regions and a plurality of N-type diffusion regions. The P-type diffusion regions are disposed in the N-type epitaxial layer, and the N-type diffusion regions are respectively disposed in the P-type diffusion regions. Wherein, the P-type diffusion regions are electronically coupled to the N-type diffusion regions.