Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least a gate structure thereon and an interlayer dielectric (ILD) layer surrounding the gate structure, wherein the gate structure comprises a hard mask thereon; forming a dielectric layer on the gate structure and the ILD layer; removing part of the dielectric layer to expose the hard mask and the ILD layer; and performing a surface treatment to form a doped region in the hard mask and the ILD layer.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first gate structure and a second gate structure on the substrate; forming a contact etch stop layer (CESL) on the first gate structure, the second gate structure, and the substrate; removing part of the CESL between the first gate structure and the second gate structure; and forming an interlayer dielectric (ILD) layer on the CESL.

Abstract: A zoom lens system includes a first lens group of negative refractive power and a second lens group of positive refractive power. The first lens group includes a first lens of negative refractive power, and the second lens group is disposed between the first lens group and a reduced side and includes in order from a magnified side to the reduced side a second lens of positive refractive power, a third lens of positive refractive power, a fourth lens of negative refractive power, and a fifth lens of positive refractive power. At least one of the first lens to the fifth lens is an aspherical lens having at least one aspherical surface.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a fin shaped structure, agate structure, an epitaxial layer, an interlayer dielectric layer, a first plug and a protection layer. The fin shaped structure is disposed on a substrate, and the gate structure is across the fin shaped structure. The epitaxial layer is disposed in the fin shaped structure, adjacent to the gate structure. The interlayer dielectric layer covers the substrate and the fin shaped structure. The first plug is formed in the interlayer dielectric layer, wherein the first plug is electrically connected to the epitaxial layer. The protection layer is disposed between the first plug and the gate structure.

Abstract: The present invention provides a method for forming an opening, including: first, a hard mask material layer is formed on a target layer, next, a tri-layer hard mask is formed on the hard mask material layer, where the tri-layer hard mask includes an bottom organic layer (ODL), a middle silicon-containing hard mask bottom anti-reflection coating (SHB) layer and a top photoresist layer, and an etching process is then performed, to remove parts of the tri-layer hard mask, parts of the hard mask material layer and parts of the target layer in sequence, so as to form at least one opening in the target layer, where during the step for removing parts of the hard mask material layer, a lateral etching rate of the hard mask material layer is smaller than a lateral etching rate of the ODL.

Abstract: A manufacturing method of a semiconductor structure includes the following steps. Gate structures are formed on a semiconductor substrate. A source/drain contact is formed between two adjacent gate structures. The source/drain contact is recessed by a recessing process. A top surface of the source/drain contact is lower than a top surface of the gate structure after the recessing process. A stop layer is formed on the gate structures and the source/drain contact after the recessing process. A top surface of the stop layer on the source/drain contact is lower than the top surface of the gate structure. A semiconductor structure includes the semiconductor substrate, the gate structures, a gate contact structure, and the source/drain contact. The source/drain contact is disposed between two adjacent gate structures, and the top surface of the source/drain contact is lower than the top surface of the gate structure.

Abstract: A method of fabricating a semiconductor structure includes the following steps: forming a first interlayer dielectric on a substrate; forming a gate electrode on the substrate so that the periphery of the gate electrode is surrounded by the first interlayer dielectric; forming a patterned mask layer comprising at least a layer of organic material on the gate electrode; forming a conformal dielectric layer to conformally cover the layer of organic material; and forming a second interlayer dielectric to cover the conformal dielectric layer.

Abstract: A method of fabricating a semiconductor structure includes the following steps: forming a first interlayer dielectric on a substrate; forming a gate electrode on the substrate so that the periphery of the gate electrode is surrounded by the first interlayer dielectric; forming a patterned mask layer comprising at least a layer of organic material on the gate electrode; forming a conformal dielectric layer to conformally cover the layer of organic material; and forming a second interlayer dielectric to cover the conformal dielectric layer.

Abstract: An optical lens system includes, in order from a magnified side to a minified side, a first lens group and a second lens group. The first lens group of negative refractive power has at least one aspheric surface, and the second lens group of positive refractive power has at least one aspheric surface. Each of the lenses in the optical lens system is a singlet lens, and the condition: TE(?=365)>70% is satisfied, where TE(?=365) denotes an overall transmittance of all of the lenses in the optical lens system measured at a wavelength of 365 nm.

Abstract: A projection lens system includes, in order from a magnified side to a reduced side, a first lens group of positive refractive power and a second lens group of positive refractive power. The second lens group includes at least one cemented lens and at least one aspheric surface. During focusing, the first lens group remains stationary, and the second lens group is movable in a direction of an optical axis.

Abstract: A semiconductor device is disclosed. The semiconductor device includes: a substrate; a gate structure on the substrate; an interlayer dielectric (ILD) around the gate structure; a first contact plug in the ILD layer; a second dielectric layer on the ILD layer; a second contact plug in the second dielectric layer and electrically connected to the first contact plug; and a spacer between the second contact plug and the second dielectric layer.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least a gate structure thereon and an interlayer dielectric (ILD) layer surrounding the gate structure, wherein the gate structure comprises a hard mask thereon; forming a dielectric layer on the gate structure and the ILD layer; removing part of the dielectric layer to expose the hard mask and the ILD layer; and performing a surface treatment to form a doped region in the hard mask and the ILD layer.

Abstract: A stereo camera apparatus including an image capturing device, an optical axis controlling module and a calculating module is provided. The image capturing device is suitable for obtaining a stereo image, and the image capturing device includes a plurality of image capturing units. The optical axis controlling module is coupled to the image capturing device. The calculating module is coupled to the image capturing device and the optical axis controlling module, wherein the calculating module calculates a calibration condition according to the stereo image. The optical axis controlling module adjusts directions of imaging optical axes of the image capturing units. After being adjusted by the optical axis controlling modules, the imaging optical axes of the image capturing units are aligned. Besides, a self-calibration apparatus and a method of calibration are also provided.

Abstract: The invention provides a projection apparatus having an image source, a projection lens, and a beam-splitting module. The image source provides an image beam, and the image beam includes a first sub image beam and at least one second sub image beam. The projection lens is disposed on a transmission path of the image beam. The beam-splitting module projects the first sub image beam passing through the beam-splitting module onto a first imaging plane, and projects the second sub image beam reflected by the beam-splitting module onto at least one second imaging plane. The first imaging plane is not coplanar with the at least one second imaging plane. The projection lens is disposed on the transmission path of the image beam between the beam-splitting module and the image source.

Abstract: A method for locating faults in a power network includes reading power network information stored in a database in a data reading step. A power network matrix is created based on the power network information in a power network creating step. A fault current vector is created in a fault current vector creating step. In a fault locating step, a backward substitution is carried out on the fault current vector and the power network matrix to obtain a detection zone vector, and the fault can be located. The fault locating speed of the power network is, thus, increased.

Abstract: A method for determining a signal transmission mode of a plurality of fault indicators includes a data retrieval step, a mode setting step, a number setting step, an analysis step, a first determination step, a calculation step, a second determination step and a mode number increasing step. Based on the above step, the method is able to determine a preferred number of times the fault signals are required to be transmitted between the plurality of fault indicators when a predetermined transmission success rate is met, reducing the energy consumption and prolonging the service life of the indicators.

Abstract: The invention provides a projection apparatus having an image source, a projection lens, and a beam-splitting module. The image source provides an image beam, and the image beam includes a first sub image beam and at least one second sub image beam. The projection lens is disposed on a transmission path of the image beam. The beam-splitting module projects the first sub image beam passing through the beam-splitting module onto a first imaging plane, and projects the second sub image beam reflected by the beam-splitting module onto at least one second imaging plane. The first imaging plane is not coplanar with the at least one second imaging plane. The projection lens is disposed on the transmission path of the image beam between the beam-splitting module and the image source.

Abstract: A stereo camera apparatus including an image capturing device, an optical axis controlling module and a calculating module is provided. The image capturing device is suitable for obtaining a stereo image, and the image capturing device includes a plurality of image capturing units. The optical axis controlling module is coupled to the image capturing device. The calculating module is coupled to the image capturing device and the optical axis controlling module, wherein the calculating module calculates a calibration condition according to the stereo image. The optical axis controlling module adjusts directions of imaging optical axes of the image capturing units. After being adjusted by the optical axis controlling modules, the imaging optical axes of the image capturing units are aligned. Besides, a self-calibration apparatus and a method of calibration are also provided.

Abstract: Nor-seco-type cucurbit[n]uril compounds and methylene bridged glycoluril oligomers are produced by reacting glycoluril and formaldehyde in strong organic or mineral acid at a temperature adequate to condense the reactants. These compounds are characterized by lacking —CH2— groups rendering their internal cavities more open and, for example, more responsive to guest compounds.

Abstract: A wireless input apparatus includes a shell having a recess at a top surface thereof. The recess has an opening at a rear wall thereof. A bottom of the recess is formed with two abreast sliding slots which extend perpendicular to the rear wall. A stopper is disposed across each sliding slot and spaced from a rear side of the sliding slot to form a stopping recess. Each of two opposite lateral walls of the recess has a guiding trough. A rear side of the guiding trough has a buckling notch at a lower portion thereof. A wireless transmitter has a main body and an insertion portion protruded from a rear end of the main body. The main body has two lumps at a bottom thereof corresponding to the stopping recesses, and a pair of sliding pieces protruded outwards from two opposite sides thereof corresponding to the buckling notches.