Patents by Inventor Wei-Hao LU

Wei-Hao LU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12217647
    Abstract: An electronic device including a plurality of pixels and a driving element is provided. Each of the plurality of pixels includes a first sub-pixel, a second sub-pixel, and a third sub-pixel. The driving element drives each first sub-pixel of the plurality of pixels.
    Type: Grant
    Filed: October 5, 2023
    Date of Patent: February 4, 2025
    Assignee: Innolux Corporation
    Inventors: Chia-Hao Tsai, You-Cheng Lu, Yi-Shiuan Cherng, Wei-Yen Chiu
  • Patent number: 12191369
    Abstract: Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary method includes forming a semiconductor stack on a substrate, wherein the semiconductor stack includes a first semiconductor layers and a second semiconductor layers alternatively disposed, the first semiconductor layers and the second semiconductor layers being different in composition; patterning the semiconductor stack to form a semiconductor fin; forming a dielectric fin next to the semiconductor fin; forming a first gate stack on the semiconductor fin and the dielectric fin; etching to a portion of the semiconductor fin within a source/drain region, resulting in a source/drain recess; and epitaxially growing a source/drain feature in the source/drain recess, defining an airgap spanning between a sidewall of the source/drain feature and a sidewall of the dielectric fin.
    Type: Grant
    Filed: September 1, 2021
    Date of Patent: January 7, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Po-Yu Lin, Wei-Yang Lee, Chia-Pin Lin, Tzu-Hua Chiu, Kuan-Hao Cheng, Wei-Han Fan, Yee-Chia Yeo, Wei Hao Lu
  • Publication number: 20240379781
    Abstract: A semiconductor device, includes a device layer comprising: a channel region; a gate stack over and along sidewalls of the channel region and a first insulating fin; and an epitaxial source/drain region adjacent the channel region, wherein the epitaxial source/drain region extends through the first insulating fin. The semiconductor device further includes a front-side interconnect structure on a first side of the device layer; and a backside interconnect structure on a second side of the device layer opposite the first side of the device layer. The backside interconnect structure comprises a backside source/drain contact that is electrically connected to the epitaxial source/drain region.
    Type: Application
    Filed: July 22, 2024
    Publication date: November 14, 2024
    Inventors: Wei Hao Lu, Li-Li Su, Chien-I Kuo, Yee-Chia Yeo, Wei-Yang Lee, Yu-Xuan Huang, Ching-Wei Tsai, Kuan-Lun Cheng
  • Publication number: 20240300405
    Abstract: An electronic device including a first light source, a second light source, and a light guiding element is provided. The first light source provides a first light. The second light source provides a second light. The light guiding element includes a first microstructure, a second microstructure, and a light emitting surface. The first microstructure faces the first light source. The second microstructure faces the second light source. The first microstructure includes a plurality of first grooves. The first light enters the light guiding element through the first grooves, and exits the light guiding element via the light emitting surface. The second microstructure includes a plurality of second grooves. The second light enters the light guiding element through the second grooves, and exits the light guiding element via the light emitting surface.
    Type: Application
    Filed: February 7, 2024
    Publication date: September 12, 2024
    Inventors: Wei-Hao LU, Wei-Hung LIAO, Hsin-Fu WANG
  • Publication number: 20240266398
    Abstract: A method of forming a semiconductor includes forming a first recess in a first semiconductor fin protruding from a substrate and forming a second recess in a second semiconductor fin protruding from the substrate first semiconductor fin and forming a source/drain region in the first recess and the second recess. Forming the source/drain region includes forming a first portion of a first layer in the first recess and forming a second portion of the first layer in the second recess, forming a second layer on the first layer by flowing a first precursor, and forming a third layer on the second layer by flowing a second precursor, the third layer being a single continuous material.
    Type: Application
    Filed: April 16, 2024
    Publication date: August 8, 2024
    Inventors: Chien-I Kuo, Wei Hao Lu, Li-Li Su, Yee-Chia Yeo
  • Patent number: 11990511
    Abstract: A method of forming a semiconductor includes forming a first recess in a first semiconductor fin protruding from a substrate and forming a second recess in a second semiconductor fin protruding from the substrate first semiconductor fin and forming a source/drain region in the first recess and the second recess. Forming the source/drain region includes forming a first portion of a first layer in the first recess and forming a second portion of the first layer in the second recess, forming a second layer on the first layer by flowing a first precursor, and forming a third layer on the second layer by flowing a second precursor, the third layer being a single continuous material.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: May 21, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-I Kuo, Wei Hao Lu, Li-Li Su, Yee-Chia Yeo
  • Publication number: 20230395434
    Abstract: A semiconductor device includes a fin-shape base protruding from a substrate, channel structures suspended above the fin-shape base, a gate structure wrapping around each of the channel structures, a source/drain (S/D) epitaxial feature abutting the channel structures and directly above a top surface of the fin-shape base, inner spacers interposing the S/D epitaxial feature and the gate structure, and a dielectric layer disposed vertically between the top surface of the fin-shape base and a bottom surface of the S/D epitaxial feature.
    Type: Application
    Filed: August 10, 2023
    Publication date: December 7, 2023
    Inventors: Bo-Yu Lai, Jyun-Chih Lin, Yen-Ting Chen, Wei-Yang Lee, Chia-Pin Lin, Wei Hao Lu, Li-Li Su
  • Publication number: 20230378304
    Abstract: Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary method includes forming a semiconductor stack on a substrate, wherein the semiconductor stack includes a first semiconductor layers and a second semiconductor layers alternatively disposed, the first semiconductor layers and the second semiconductor layers being different in composition; patterning the semiconductor stack to form a semiconductor fin; forming a dielectric fin next to the semiconductor fin; forming a first gate stack on the semiconductor fin and the dielectric fin; etching to a portion of the semiconductor fin within a source/drain region, resulting in a source/drain recess; and epitaxially growing a source/drain feature in the source/drain recess, defining an airgap spanning between a sidewall of the source/drain feature and a sidewall of the dielectric fin.
    Type: Application
    Filed: August 2, 2023
    Publication date: November 23, 2023
    Inventors: Po-Yu Lin, Wei-Yang Lee, Chia-Pin Lin, Tzu-Hua Chiu, Kuan-Hao Cheng, Wei-Han Fan, Yee-Chia Yeo, Wei Hao Lu
  • Publication number: 20230378176
    Abstract: A semiconductor device includes: a first fin and a second fin extending from a substrate and an epitaxial source/drain region. The epitaxial source/drain region includes a first portion grown on the first fin and a second portion grown on the second fin, and the first portion and the second portion are joined at a merging boundary.
    Type: Application
    Filed: July 31, 2023
    Publication date: November 23, 2023
    Inventors: Wei Hao Lu, Yi-Fang Pai, Cheng-Wen Cheng, Li-Li Su, Chien-I Kuo
  • Patent number: 11804487
    Abstract: A semiconductor device includes: a first fin and a second fin extending from a substrate and an epitaxial source/drain region. The epitaxial source/drain region includes a first portion grown on the first fin and a second portion grown on the second fin, and the first portion and the second portion are joined at a merging boundary. The epitaxial source/drain region further includes a first subregion extending from a location level with a highest point of the epitaxial source/drain region to a location level with a highest point of the merging boundary, a second subregion extending from the location level with the highest point of the merging boundary to a location level with a lowest point of the merging boundary, and a third subregion extending from the location level with the lowest point of the merging boundary to a location level with a top surface of an STI region.
    Type: Grant
    Filed: April 4, 2022
    Date of Patent: October 31, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei Hao Lu, Yi-Fang Pai, Cheng-Wen Cheng, Li-Li Su, Chien-I Kuo
  • Publication number: 20230343855
    Abstract: A method for manufacturing an integrated circuit (IC) structure is provided. The method includes: etching a first recess and a second recess in a substrate; forming a sacrificial epitaxial plug in the first recess in the substrate; forming a first epitaxial feature and a second epitaxial feature respectively in the first recess and the second recess, wherein the first epitaxial feature is over the sacrificial epitaxial plug; forming a first source/drain epitaxial structure and a second source/drain epitaxial structure over the first epitaxial feature and the second epitaxial feature respectively; forming a gate structure laterally between the first source/drain epitaxial structure and the second source/drain epitaxial structure; removing the sacrificial epitaxial plug and the first epitaxial feature to form a backside via opening exposing a backside of the first source/drain epitaxial structure; and forming a backside via in the backside via opening.
    Type: Application
    Filed: June 23, 2023
    Publication date: October 26, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-Hao LU, Chien-I KUO, Li-Li SU, Wei-Yang LEE, Yee-Chia YEO
  • Publication number: 20230317785
    Abstract: A device includes a first nanostructure over a substrate and a first source/drain region adjacent the first nanostructure. The first source/drain region includes a first epitaxial layer covering a first sidewall of the first nanostructure. The first epitaxial layer has a first concentration of a first dopant. The first epitaxial layer has a round convex profile opposite the first sidewall of the first nanostructure in a cross-sectional view. The first source/drain region further includes a second epitaxial layer covering the round convex profile of the first epitaxial layer in the cross-sectional view. The second epitaxial layer has a second concentration of the first dopant, the second concentration being different from the first concentration.
    Type: Application
    Filed: April 4, 2022
    Publication date: October 5, 2023
    Inventors: Yung-Chun Yang, Wei Hao Lu, Wei-Min Liu, Li-Li Su, Chii-Horng Li, Yee-Chia Yeo
  • Publication number: 20230215935
    Abstract: An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.
    Type: Application
    Filed: March 3, 2023
    Publication date: July 6, 2023
    Inventors: Tzu-Ching Lin, Wei Te Chiang, Wei Hao Lu, Chii-Horng Li, Chien-I Kuo, Li-Li Su
  • Patent number: 11688793
    Abstract: A method for manufacturing an integrated circuit (IC) structure is provided. The method includes: etching a first recess and a second recess in a substrate; forming a sacrificial epitaxial plug in the first recess in the substrate; forming a first epitaxial feature and a second epitaxial feature respectively in the first recess and the second recess, wherein the first epitaxial feature is over the sacrificial epitaxial plug; forming a first source/drain epitaxial structure and a second source/drain epitaxial structure over the first epitaxial feature and the second epitaxial feature respectively; forming a gate structure laterally between the first source/drain epitaxial structure and the second source/drain epitaxial structure; removing the sacrificial epitaxial plug and the first epitaxial feature to form a backside via opening exposing a backside of the first source/drain epitaxial structure; and forming a backside via in the backside via opening.
    Type: Grant
    Filed: April 8, 2021
    Date of Patent: June 27, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-Hao Lu, Chien-I Kuo, LI-Li Su, Wei-Yang Lee, Yee-Chia Yeo
  • Patent number: 11600715
    Abstract: An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.
    Type: Grant
    Filed: October 21, 2019
    Date of Patent: March 7, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY. LTD.
    Inventors: Tzu-Ching Lin, Chien-I Kuo, Wei Te Chiang, Wei Hao Lu, Li-Li Su, Chii-Horng Li
  • Publication number: 20230068434
    Abstract: A method of forming a semiconductor includes forming a first recess in a first semiconductor fin protruding from a substrate and forming a second recess in a second semiconductor fin protruding from the substrate first semiconductor fin and forming a source/drain region in the first recess and the second recess. Forming the source/drain region includes forming a first portion of a first layer in the first recess and forming a second portion of the first layer in the second recess, forming a second layer on the first layer by flowing a first precursor, and forming a third layer on the second layer by flowing a second precursor, the third layer being a single continuous material.
    Type: Application
    Filed: August 27, 2021
    Publication date: March 2, 2023
    Inventors: Chien-I Kuo, Wei Hao Lu, Li-Li Su, Yee-Chia Yeo
  • Patent number: 11532750
    Abstract: A device includes a fin extending from a substrate; a gate stack over and along sidewalls of the fin; a gate spacer along a sidewall of the gate stack; an epitaxial source/drain region in the fin and adjacent the gate spacer, the epitaxial source/drain region including a first epitaxial layer on the fin, the first epitaxial layer including silicon and arsenic; and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and phosphorus, the first epitaxial layer separating the second epitaxial layer from the fin; and a contact plug on the second epitaxial layer.
    Type: Grant
    Filed: July 28, 2020
    Date of Patent: December 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Li-Li Su, Wei-Min Liu, Wei Hao Lu, Chien-I Kuo, Yee-Chia Yeo
  • Publication number: 20220367717
    Abstract: A device includes a fin extending from a substrate; a gate stack over and along sidewalls of the fin; a gate spacer along a sidewall of the gate stack; an epitaxial source/drain region in the fin and adjacent the gate spacer, the epitaxial source/drain region including a first epitaxial layer on the fin, the first epitaxial layer including silicon and arsenic; and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and phosphorus, the first epitaxial layer separating the second epitaxial layer from the fin; and a contact plug on the second epitaxial layer.
    Type: Application
    Filed: July 20, 2022
    Publication date: November 17, 2022
    Inventors: Li-Li Su, Wei-Min Liu, Wei Hao Lu, Chien-I Kuo, Yee-Chia Yeo
  • Publication number: 20220359679
    Abstract: A semiconductor device, includes a device layer comprising: a channel region; a gate stack over and along sidewalls of the channel region and a first insulating fin; and an epitaxial source/drain region adjacent the channel region, wherein the epitaxial source/drain region extends through the first insulating fin. The semiconductor device further includes a front-side interconnect structure on a first side of the device layer; and a backside interconnect structure on a second side of the device layer opposite the first side of the device layer. The backside interconnect structure comprises a backside source/drain contact that is electrically connected to the epitaxial source/drain region.
    Type: Application
    Filed: December 21, 2021
    Publication date: November 10, 2022
    Inventors: Wei Hao Lu, Li-Li Su, Chien-I Kuo, Yee-Chia Yeo, Wei-Yang Lee, Yu-Xuan Huang, Ching-Wei Tsai, Kuan-Lun Cheng
  • Publication number: 20220328657
    Abstract: A method for manufacturing an integrated circuit (IC) structure is provided. The method includes: etching a first recess and a second recess in a substrate; forming a sacrificial epitaxial plug in the first recess in the substrate; forming a first epitaxial feature and a second epitaxial feature respectively in the first recess and the second recess, wherein the first epitaxial feature is over the sacrificial epitaxial plug; forming a first source/drain epitaxial structure and a second source/drain epitaxial structure over the first epitaxial feature and the second epitaxial feature respectively; forming a gate structure laterally between the first source/drain epitaxial structure and the second source/drain epitaxial structure; removing the sacrificial epitaxial plug and the first epitaxial feature to form a backside via opening exposing a backside of the first source/drain epitaxial structure; and forming a backside via in the backside via opening.
    Type: Application
    Filed: April 8, 2021
    Publication date: October 13, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-Hao LU, Chien-I KUO, LI-Li SU, Wei-Yang LEE, Yee-Chia YEO