Patents by Inventor Wei-Hao LU
Wei-Hao LU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240142833Abstract: An electronic device includes a substrate, a driving element, a first insulating layer, a pixel electrode layer, and a common electrode layer. The driving element is disposed on the substrate. The first insulating layer is disposed on the driving element. The pixel electrode layer is disposed on the first insulating layer. The first insulating layer comprises a hole, and the pixel electrode layer is electrically connected to the driving element through the hole. The common electrode layer is disposed on the pixel electrode layer. The common electrode layer comprises a slit, and the slit has an edge, and the edge is disposed in the hole.Type: ApplicationFiled: January 11, 2024Publication date: May 2, 2024Applicant: Innolux CorporationInventors: Wei-Yen Chiu, Ming-Jou Tai, You-Cheng Lu, Yi-Shiuan Cherng, Yi-Hsiu Wu, Chia-Hao Tsai, Yung-Hsun Wu
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Patent number: 11972975Abstract: A method of forming a semiconductor device structure is provided. The method includes forming a masking structure with first openings over a semiconductor substrate and correspondingly forming metal layers in the first openings. The method also includes recessing the masking structure to form second openings between the metal layers and forming a sacrificial layer surrounded by a first liner in each of the second openings. In addition, after forming a second liner over the sacrificial layer in each of the second openings, the method includes removing the sacrificial layer in each of the second openings to form a plurality of air gaps therefrom.Type: GrantFiled: June 24, 2021Date of Patent: April 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsi-Wen Tien, Wei-Hao Liao, Yu-Teng Dai, Hsin-Chieh Yao, Chih-Wei Lu, Chung-Ju Lee, Shau-Lin Shue
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Publication number: 20240120200Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises receiving a structure including a substrate and a first hard mask over the substrate, the first hard mask having at least two separate portions; forming spacers along sidewalls of the at least two portions of the first hard mask with a space between the spacers; forming a second hard mask in the space; forming a first cut in the at least two portions of the first hard mask; forming a second cut in the second hard mask; and depositing a cut hard mask in the first cut and the second cut.Type: ApplicationFiled: December 18, 2023Publication date: April 11, 2024Inventors: Hsi-Wen Tien, Wei-Hao Liao, Pin-Ren Dai, Chih Wei Lu, Chung-Ju Lee
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Publication number: 20240120272Abstract: Embodiments of the present disclosure relates to a method for forming a semiconductor device structure. The method includes including forming one or more conductive features in a first interlayer dielectric (ILD), forming an etch stop layer on the first ILD, forming a second ILD over the etch stop layer, forming one or more openings through the second ILD and the etch stop layer to expose a top surface of the one or more first conductive features, wherein the one or more openings are formed by a first etch process in a first process chamber, exposing the one or more openings to a second etch process in a second process chamber so that the shape of the or more openings is elongated, and filling the one or more openings with a conductive material.Type: ApplicationFiled: January 15, 2023Publication date: April 11, 2024Inventors: Wei-Hao LIAO, Hsi-Wen TIEN, Chih Wei LU, Yung-Hsu WU, Cherng-Shiaw TSAI, Chia-Wei SU
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Patent number: 11915943Abstract: A semiconductor structure includes a conductive feature disposed over a semiconductor substrate, a via disposed in a first interlayer dielectric (ILD) layer over the conductive feature, and a metal-containing etch-stop layer (ESL) disposed on the via, where the metal-containing ESL includes a first metal and is resistant to etching by a fluorine-containing etchant. The semiconductor structure further includes a conductive line disposed over the metal-containing ESL, where the conductive line includes a second metal different from the first metal and is etchable by the fluorine-containing etchant, and where the via is configured to interconnect the conductive line to the conductive feature. Furthermore, the semiconductor structure includes a second ILD layer disposed over the first ILD layer.Type: GrantFiled: October 25, 2021Date of Patent: February 27, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Hao Liao, Hsi-Wen Tien, Chih Wei Lu, Pin-Ren Dai, Chung-Ju Lee
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Publication number: 20230395434Abstract: A semiconductor device includes a fin-shape base protruding from a substrate, channel structures suspended above the fin-shape base, a gate structure wrapping around each of the channel structures, a source/drain (S/D) epitaxial feature abutting the channel structures and directly above a top surface of the fin-shape base, inner spacers interposing the S/D epitaxial feature and the gate structure, and a dielectric layer disposed vertically between the top surface of the fin-shape base and a bottom surface of the S/D epitaxial feature.Type: ApplicationFiled: August 10, 2023Publication date: December 7, 2023Inventors: Bo-Yu Lai, Jyun-Chih Lin, Yen-Ting Chen, Wei-Yang Lee, Chia-Pin Lin, Wei Hao Lu, Li-Li Su
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Publication number: 20230378176Abstract: A semiconductor device includes: a first fin and a second fin extending from a substrate and an epitaxial source/drain region. The epitaxial source/drain region includes a first portion grown on the first fin and a second portion grown on the second fin, and the first portion and the second portion are joined at a merging boundary.Type: ApplicationFiled: July 31, 2023Publication date: November 23, 2023Inventors: Wei Hao Lu, Yi-Fang Pai, Cheng-Wen Cheng, Li-Li Su, Chien-I Kuo
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Publication number: 20230378304Abstract: Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary method includes forming a semiconductor stack on a substrate, wherein the semiconductor stack includes a first semiconductor layers and a second semiconductor layers alternatively disposed, the first semiconductor layers and the second semiconductor layers being different in composition; patterning the semiconductor stack to form a semiconductor fin; forming a dielectric fin next to the semiconductor fin; forming a first gate stack on the semiconductor fin and the dielectric fin; etching to a portion of the semiconductor fin within a source/drain region, resulting in a source/drain recess; and epitaxially growing a source/drain feature in the source/drain recess, defining an airgap spanning between a sidewall of the source/drain feature and a sidewall of the dielectric fin.Type: ApplicationFiled: August 2, 2023Publication date: November 23, 2023Inventors: Po-Yu Lin, Wei-Yang Lee, Chia-Pin Lin, Tzu-Hua Chiu, Kuan-Hao Cheng, Wei-Han Fan, Yee-Chia Yeo, Wei Hao Lu
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Patent number: 11804487Abstract: A semiconductor device includes: a first fin and a second fin extending from a substrate and an epitaxial source/drain region. The epitaxial source/drain region includes a first portion grown on the first fin and a second portion grown on the second fin, and the first portion and the second portion are joined at a merging boundary. The epitaxial source/drain region further includes a first subregion extending from a location level with a highest point of the epitaxial source/drain region to a location level with a highest point of the merging boundary, a second subregion extending from the location level with the highest point of the merging boundary to a location level with a lowest point of the merging boundary, and a third subregion extending from the location level with the lowest point of the merging boundary to a location level with a top surface of an STI region.Type: GrantFiled: April 4, 2022Date of Patent: October 31, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei Hao Lu, Yi-Fang Pai, Cheng-Wen Cheng, Li-Li Su, Chien-I Kuo
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Publication number: 20230343855Abstract: A method for manufacturing an integrated circuit (IC) structure is provided. The method includes: etching a first recess and a second recess in a substrate; forming a sacrificial epitaxial plug in the first recess in the substrate; forming a first epitaxial feature and a second epitaxial feature respectively in the first recess and the second recess, wherein the first epitaxial feature is over the sacrificial epitaxial plug; forming a first source/drain epitaxial structure and a second source/drain epitaxial structure over the first epitaxial feature and the second epitaxial feature respectively; forming a gate structure laterally between the first source/drain epitaxial structure and the second source/drain epitaxial structure; removing the sacrificial epitaxial plug and the first epitaxial feature to form a backside via opening exposing a backside of the first source/drain epitaxial structure; and forming a backside via in the backside via opening.Type: ApplicationFiled: June 23, 2023Publication date: October 26, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei-Hao LU, Chien-I KUO, Li-Li SU, Wei-Yang LEE, Yee-Chia YEO
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Publication number: 20230317785Abstract: A device includes a first nanostructure over a substrate and a first source/drain region adjacent the first nanostructure. The first source/drain region includes a first epitaxial layer covering a first sidewall of the first nanostructure. The first epitaxial layer has a first concentration of a first dopant. The first epitaxial layer has a round convex profile opposite the first sidewall of the first nanostructure in a cross-sectional view. The first source/drain region further includes a second epitaxial layer covering the round convex profile of the first epitaxial layer in the cross-sectional view. The second epitaxial layer has a second concentration of the first dopant, the second concentration being different from the first concentration.Type: ApplicationFiled: April 4, 2022Publication date: October 5, 2023Inventors: Yung-Chun Yang, Wei Hao Lu, Wei-Min Liu, Li-Li Su, Chii-Horng Li, Yee-Chia Yeo
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Publication number: 20230215935Abstract: An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.Type: ApplicationFiled: March 3, 2023Publication date: July 6, 2023Inventors: Tzu-Ching Lin, Wei Te Chiang, Wei Hao Lu, Chii-Horng Li, Chien-I Kuo, Li-Li Su
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Patent number: 11688793Abstract: A method for manufacturing an integrated circuit (IC) structure is provided. The method includes: etching a first recess and a second recess in a substrate; forming a sacrificial epitaxial plug in the first recess in the substrate; forming a first epitaxial feature and a second epitaxial feature respectively in the first recess and the second recess, wherein the first epitaxial feature is over the sacrificial epitaxial plug; forming a first source/drain epitaxial structure and a second source/drain epitaxial structure over the first epitaxial feature and the second epitaxial feature respectively; forming a gate structure laterally between the first source/drain epitaxial structure and the second source/drain epitaxial structure; removing the sacrificial epitaxial plug and the first epitaxial feature to form a backside via opening exposing a backside of the first source/drain epitaxial structure; and forming a backside via in the backside via opening.Type: GrantFiled: April 8, 2021Date of Patent: June 27, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei-Hao Lu, Chien-I Kuo, LI-Li Su, Wei-Yang Lee, Yee-Chia Yeo
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Patent number: 11600715Abstract: An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.Type: GrantFiled: October 21, 2019Date of Patent: March 7, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY. LTD.Inventors: Tzu-Ching Lin, Chien-I Kuo, Wei Te Chiang, Wei Hao Lu, Li-Li Su, Chii-Horng Li
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Publication number: 20230068434Abstract: A method of forming a semiconductor includes forming a first recess in a first semiconductor fin protruding from a substrate and forming a second recess in a second semiconductor fin protruding from the substrate first semiconductor fin and forming a source/drain region in the first recess and the second recess. Forming the source/drain region includes forming a first portion of a first layer in the first recess and forming a second portion of the first layer in the second recess, forming a second layer on the first layer by flowing a first precursor, and forming a third layer on the second layer by flowing a second precursor, the third layer being a single continuous material.Type: ApplicationFiled: August 27, 2021Publication date: March 2, 2023Inventors: Chien-I Kuo, Wei Hao Lu, Li-Li Su, Yee-Chia Yeo
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Patent number: 11532750Abstract: A device includes a fin extending from a substrate; a gate stack over and along sidewalls of the fin; a gate spacer along a sidewall of the gate stack; an epitaxial source/drain region in the fin and adjacent the gate spacer, the epitaxial source/drain region including a first epitaxial layer on the fin, the first epitaxial layer including silicon and arsenic; and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and phosphorus, the first epitaxial layer separating the second epitaxial layer from the fin; and a contact plug on the second epitaxial layer.Type: GrantFiled: July 28, 2020Date of Patent: December 20, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Li-Li Su, Wei-Min Liu, Wei Hao Lu, Chien-I Kuo, Yee-Chia Yeo
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Publication number: 20220367717Abstract: A device includes a fin extending from a substrate; a gate stack over and along sidewalls of the fin; a gate spacer along a sidewall of the gate stack; an epitaxial source/drain region in the fin and adjacent the gate spacer, the epitaxial source/drain region including a first epitaxial layer on the fin, the first epitaxial layer including silicon and arsenic; and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and phosphorus, the first epitaxial layer separating the second epitaxial layer from the fin; and a contact plug on the second epitaxial layer.Type: ApplicationFiled: July 20, 2022Publication date: November 17, 2022Inventors: Li-Li Su, Wei-Min Liu, Wei Hao Lu, Chien-I Kuo, Yee-Chia Yeo
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Publication number: 20220359679Abstract: A semiconductor device, includes a device layer comprising: a channel region; a gate stack over and along sidewalls of the channel region and a first insulating fin; and an epitaxial source/drain region adjacent the channel region, wherein the epitaxial source/drain region extends through the first insulating fin. The semiconductor device further includes a front-side interconnect structure on a first side of the device layer; and a backside interconnect structure on a second side of the device layer opposite the first side of the device layer. The backside interconnect structure comprises a backside source/drain contact that is electrically connected to the epitaxial source/drain region.Type: ApplicationFiled: December 21, 2021Publication date: November 10, 2022Inventors: Wei Hao Lu, Li-Li Su, Chien-I Kuo, Yee-Chia Yeo, Wei-Yang Lee, Yu-Xuan Huang, Ching-Wei Tsai, Kuan-Lun Cheng
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Publication number: 20220328657Abstract: A method for manufacturing an integrated circuit (IC) structure is provided. The method includes: etching a first recess and a second recess in a substrate; forming a sacrificial epitaxial plug in the first recess in the substrate; forming a first epitaxial feature and a second epitaxial feature respectively in the first recess and the second recess, wherein the first epitaxial feature is over the sacrificial epitaxial plug; forming a first source/drain epitaxial structure and a second source/drain epitaxial structure over the first epitaxial feature and the second epitaxial feature respectively; forming a gate structure laterally between the first source/drain epitaxial structure and the second source/drain epitaxial structure; removing the sacrificial epitaxial plug and the first epitaxial feature to form a backside via opening exposing a backside of the first source/drain epitaxial structure; and forming a backside via in the backside via opening.Type: ApplicationFiled: April 8, 2021Publication date: October 13, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei-Hao LU, Chien-I KUO, LI-Li SU, Wei-Yang LEE, Yee-Chia YEO
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Publication number: 20220320307Abstract: Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary method includes forming a semiconductor stack on a substrate, wherein the semiconductor stack includes a first semiconductor layers and a second semiconductor layers alternatively disposed, the first semiconductor layers and the second semiconductor layers being different in composition; patterning the semiconductor stack to form a semiconductor fin; forming a dielectric fin next to the semiconductor fin; forming a first gate stack on the semiconductor fin and the dielectric fin; etching to a portion of the semiconductor fin within a source/drain region, resulting in a source/drain recess; and epitaxially growing a source/drain feature in the source/drain recess, defining an airgap spanning between a sidewall of the source/drain feature and a sidewall of the dielectric fin.Type: ApplicationFiled: September 1, 2021Publication date: October 6, 2022Inventors: Po-Yu Lin, Wei-Yang Lee, Chia-Pin Lin, Tzu-Hua Chiu, Kuan-Hao Cheng, Wei-Han Fan, Yee-Chia Yeo, Wei Hao Lu