Abstract: The present invention discloses a refrigeration dehumidifier with compensation and controlling method thereof. The refrigeration dehumidifier with compensation comprises an environment-adjusting unit, a temperature-detecting unit, a humidity-detecting unit, a temperature-adjusting unit and a control unit. The temperature-adjusting unit is used to derive a plurality of adjusted temperature values by calculating or searching from a temperature table, then the real moisture values corresponding to the indoor space. The control unit is used to adjust the environment-adjusting unit based on the plurality of moisture values, in order to shorten the time achieving a target-moisture value.

Abstract: A power-adjusting method for uplink transmission is provided. The power-adjusting method is applied to user equipment (UE). In response to the UE transmitting a first packet carrying a specific message to a network node, the power-adjusting method includes the UE increasing the transmission power to transmit the first packet.

Abstract: A high electron mobility transistor includes a substrate. A channel layer is disposed on the substrate. An active layer is disposed on the channel layer. The active layer includes a P-type aluminum gallium nitride layer. A P-type gallium nitride gate is disposed on the active layer. A source electrode and a drain electrode are disposed on the active layer.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; removing the hard mask to form a first recess for exposing the barrier layer; removing the hard mask adjacent to the first recess to form a second recess; and forming a p-type semiconductor layer in the first recess and the second recess.

Abstract: A high electron mobility transistor (HEMT) device including the following components is provided. A gate electrode is located on a barrier layer. A source electrode is located on the first side of the gate electrode. A drain electrode is located on the second side of the gate. A source field plate is connected to the source electrode. The source field plate includes first, second, and third field plate portions. The first field plate portion is connected to the source electrode and is located on the first side of the gate electrode. The second field plate portion is located on the second side of the gate electrode. The third field plate portion is connected to the end of the first field plate portion and the end of the second field plate portion. The source field plate has a first opening located directly above the gate electrode.

Abstract: The invention discloses a use of Bacillus coagulans BC198 or its metabolites for prevention or adjuvant treatment of intestinal lesion-related pathological changes or flora imbalance caused by chemotherapy, that is, by administering an effective amount of Bacillus coagulans BC198 to an individual receiving chemotherapy is capable of effectively improving disorders of weight loss, loss of appetite, diarrhea, shortening of length of large intestine, inflammation, intestinal tissues lesion and imbalance of intestinal flora caused by chemotherapeutic drugs, in other words, the Bacillus coagulans BC198 disclosed in the invention can be used as an adjuvant product, a dietetic food product for chemotherapy, or other compositions for improving side effects or enhancing therapeutic effects.

Abstract: A sensor placement optimization device is provided, which may include a preprocessing circuit and an operational circuit. The preprocessing circuit may perform a pre-process for the sensing signals of a plurality of temperature sensors, installed on a machine tool, to generate a pre-processed data. The operational circuit may execute a normalization for the pre-processed data to generate a normalized data, perform a principal component analysis for the normalized data to generate a dimensionality-reduced data and implement a principal component regression for the dimensionality-reduced data to obtain the contributions of the temperature sensors. Then, the operational circuit may rank the temperature sensors according to the contributions thereof to generate a ranking result and execute a screening process according to the ranking result to select at least one redundant sensor from the temperature sensors; afterward, the operational circuit may remove the redundant sensor from the temperature sensors.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; removing the hard mask to form a first recess for exposing the barrier layer; removing the hard mask adjacent to the first recess to form a second recess; and forming a p-type semiconductor layer in the first recess and the second recess.

Abstract: A memory structure comprises a dielectric layer, a first ferromagnetic bottom electrode, a second ferromagnetic bottom electrode, an SOT channel layer, and an MTJ structure. The dielectric layer is over the substrate. The first ferromagnetic bottom electrode extends through the dielectric layer. The second ferromagnetic bottom electrode extends through the dielectric layer, and is spaced apart from the first ferromagnetic bottom electrode. The SOT channel layer extends from the first ferromagnetic bottom electrode to the second ferromagnetic bottom electrode. The MTJ structure is over the SOT channel layer.

Abstract: A semiconductor substrate is provided. A trench isolation region is formed in the semiconductor substrate. A resist pattern having an opening exposing the trench isolation region and partially exposing the semiconductor substrate is disposed adjacent to the trench isolation region. A first ion implantation process is performed to implant first dopants into the semiconductor substrate through the opening, thereby forming a well region in the semiconductor substrate. The trench isolation region is within the well region. A second ion implantation process is performed to implant second dopants into the semiconductor substrate through the opening, thereby forming an extended doped region contiguous with the well region. The resist pattern is then removed. After removing the resist pattern, a gate dielectric layer is formed on the semiconductor substrate. A gate is then formed on the gate dielectric layer. The gate overlaps with the extended doped region.

Abstract: A method of fabricating a metal gate transistor includes providing a substrate. Then, a high-k dielectric layer is formed to cover the substrate. Later, an ion implantation process is performed to implant fluoride ions into the high-k dielectric layer. After the ion implantation process, a polysilicon gate is formed on the high-k dielectric layer. Next, an interlayer dielectric layer is formed to cover the substrate and the polysilicon gate. Finally, the polysilicon gate is replaced by a metal gate.

Abstract: A method of cross component carrier (Cross-CC) beam management is proposed. A transceiver uses multiple CCs' channel measurements to obtain a beam vector such that better performance can be achieved by utilizing wideband channel. The transceiver derives the beam vector by using the channel measurements of a set of selected CCs applied with a carrier weight factor. The transceiver utilizes beam management reference signal (BM-RS) of the set of selected CCs to derive the beam vector, e.g., an optimal beam. In one embodiment, the carrier weight factor can be the number of BM-RS REs of each CC. In another embodiment, the channel measurements can be SNR/RSRP, and the carrier weight factor can be the SNR/RSRP of each CC.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. The UE receives a target SSB from a base station. The UE obtains received data carried in a broadcast channel of the target SSB. The UE reconstructs, based on received data carried in a broadcast channel of a previously received SSB, transmitted data placed in the broadcast channel of the target SSB at the base station. The UE preforms a channel estimation and/or synchronization based on a comparison of the received data and the transmitted data of the target SSB.

Abstract: The invention provides a method for antenna selectin of a user equipment (UE). The UE may comprise a plurality of antennas. The method may comprise calculating one or more quality evaluations respectively associated with one or more first antenna subsets, and selecting one of the one or more first antenna subsets according to the one or more quality evaluations. Each antenna subset may include one or more of the plurality of antennas. Each quality evaluation may be calculated under a condition that the antenna(s) included in the associated antenna subset is (are) used to communicate.

Abstract: A method to perform. beam management (BM) and/or synchronization (Sync) using primary synchronization signal (PSS) when pilot contamination is low to improve system performance is proposed. A UE first determines pilot contamination. level on PSS of a synchronization signal block (SSB), depending on different network deployment. scenarios. The UE then adaptively perform BM or Sync, by dynamically adjusting to the pilot contamination level on PSS. If the pilot contamination level is high, then the UE follows a 3-symbol mode, e.g., uses only PBCH0, SSS, and PBCH2 symbols for performing BM or Sync. Otherwise, if the pilot contamination level is low, then the UE follows a 4-symbol mode, e.g., uses PSS as an extra symbol for BM or Sync to improve system performance.

Abstract: A combination of probiotics for improving body compositions includes Lacticaseibacillus paracasei S38 and Bacillus coagulans BC198. The combination of probiotics can be a medicine composition, a nutrient supplement, healthy food or a combination thereof. The applications of the combination of probiotics include weight loss, reduction of fat, abatement of appetite, production of butyric acid within intestinal tracts and anf increased count of Akkermansia muciniphila or Ruminococcaceae inside intestines.

Abstract: A method to jointly perform beam management, synchronization, and L1 measurements using a single synchronization signal block (SSB) burst in NR systems is proposed to improve data rate and to reduce power consumption. In a scheduling based SSB method, a UE is scheduled to perform either beam management or synchronization and L1 measurements alternatively. In a joint SSB method, a UE performs beam management, synchronization, and L1 RSRP/SNR measurements within a single SSB burst simultaneously. The UE can dynamically switch between the two SSB methods based on predefined conditions. Further, multiple joint SSB modes are introduced for the joint SSB method, where either 3 OFDM symbols or 4 OFDM symbols of each SSB burst are used. UE can dynamically switch among the joint SSB modes depending on contamination level on the OFDM symbol carrying PSS.

Abstract: A method to perform beam management (BM) and/or synchronization (Sync) with interference cancellation on synchronization signal block (SSB) is proposed. A UE determines interference level and/or pilot contamination level. The UE can then perform BM or Sync, with or without interference cancellation, adapt to the determined interference and pilot contamination level. If interference level is high, UE applies interference cancellation for BM and Sync. If interference level is low, UE does not apply interference cancellation for BM and Sync. If the pilot contamination level is high, then UE follows the 3-symbol mode, e.g., uses only PECH0 SSS, and PBCH2 symbols for BM or Sync. If the pilot contamination level is low, then UE follows the 4-symbol mode, e.g., uses PSS as an extra symbol for BM or Sync to improve system performance.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a device. The device applies Nso sensing beam vectors to Nso received signals at Nant antennas to obtain Nso measurements, respectively, Nso and Nant each being an integer greater than or equal to 1. The device determines a beam vector based on the Nso measurements and the Nso sensing beam vectors.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. The UE receives, from a base station, a configuration specifying an initial aggregated bandwidth W0 carried on C0 component carriers on which a reception unit (RXU) of the UE is to receive signals. The UE determines a total bandwidth WTOT on which the UE is capable of receiving signals. The UE determines, based on WTOT and W0, an initial hardware limit of Q0? RXUs that the UE is allowed to activate concurrently. The UE determines an adjusted aggregated bandwidth W1 carried on C1 component carriers on which an RXU of the UE is to receive signals based on a channel condition between the UE and the base station.