Abstract: The present invention discloses an air conditioning (AC) system, which comprises an indoor ventilation device, at least one air-supply chain and at least one cascading duct. The indoor ventilation device comprises a main blower. Each of the at least one air-supply chain comprises “n” sub air-supply regions each having at least one air inlet and at least one air outlet. Each of the at least one cascading duct is used to one-by-one cascade each of the “n” sub air-supply regions by sequentially connecting with the at least one air inlet and/or the at least one air outlet of each of the “n” sub air-supply regions, wherein “n” is an integer and “n”>1 and at least one of the at least one cascading duct is a partition wall connecting any two sub air-supply regions.

Abstract: A semiconductor substrate is provided. A trench isolation region is formed in the semiconductor substrate. A resist pattern having an opening exposing the trench isolation region and partially exposing the semiconductor substrate is disposed adjacent to the trench isolation region. A first ion implantation process is performed to implant first dopants into the semiconductor substrate through the opening, thereby forming a well region in the semiconductor substrate. The trench isolation region is within the well region. A second ion implantation process is performed to implant second dopants into the semiconductor substrate through the opening, thereby forming an extended doped region contiguous with the well region. The resist pattern is then removed. After removing the resist pattern, a gate dielectric layer is formed on the semiconductor substrate. A gate is then formed on the gate dielectric layer. The gate overlaps with the extended doped region.

Abstract: An electronic device includes a circuit board, a package on package structure, a heat-conducting cover, and a heat-conducting fluid. The circuit board has a first surface and a second surface opposite to each other. The package on package structure is disposed on the first surface. The package on package structure has at least one heat generating element. The heat-conducting cover is disposed on the second surface and is in thermal contact with the circuit board. The heat-conducting cover and the second surface form an enclosed space. The heat-conducting fluid is filled in the enclosed space.

Abstract: Various novel concepts and schemes pertaining to non-orthogonal multiple access for wireless communications are described. A group orthogonal coded access (GOCA) scheme is introduced to reduce multi-user interference (MUI) and improve performance. A repetition division multiple access (RDMA) scheme is introduced to differentiate user equipment (UEs) by different repetition patterns. A low-density spreading (LDS) scheme is introduced to reduce MUI and improve performance.

Abstract: Methods for tuning threshold voltages of fin-like field effect transistor (FinFET) devices are disclosed herein. An exemplary integrated circuit device includes a high voltage n-type FinFET, a high voltage p-type FinFET, a low voltage n-type FinFET, and a low voltage p-type FinFET. Threshold voltages of the high voltage n-type FinFET and the high voltage p-type FinFET are greater than threshold voltages of the low voltage n-type FinFET and the low voltage p-type FinFET, respectively. The high voltage n-type FinFET, the high voltage p-type FinFET, the low voltage n-type FinFET, and the low voltage p-type FinFET each include a threshold voltage tuning layer that includes tantalum and nitrogen. Thicknesses of the threshold voltage tuning layer of the low voltage n-type FinFET and the low voltage p-type FinFET are less than thicknesses of the threshold voltage tuning layer of the high voltage n-type FinFET and the high voltage p-type FinFET, respectively.

Abstract: A high voltage transistor structure includes a substrate. A metal gate is disposed on the substrate. At least one insulating material structure penetrates the metal gate. A metal compound layer is disposed between the metal gate and the substrate, between the insulating material structure and the substrate. The metal compound layer is a continuous structure. A gate dielectric layer is disposed under the metal compound layer and contacts the substrate.

Abstract: Aspects of the disclosure provide an apparatus that includes transmitting circuit and processing circuit. The transmitting circuitry is configured to transmit wireless signals. The processing circuitry is configured to encode a set of information bits with a code that is configured for incremental redundancy to generate a code word that includes the information bits and parity bits, buffer the code word in a circular buffer, determine a start position in the circular buffer based on a redundancy version that is selected from a plurality of redundancy versions based on a scenario evaluation of a previous transmission associated with the set of information bits, and transmit, via the transmitting circuitry, a selected portion of the code word from the start position.

Abstract: A high voltage transistor structure includes a substrate. A metal gate is disposed on the substrate. At least one insulating material structure penetrates the metal gate. A metal compound layer is disposed between the metal gate and the substrate, between the insulating material structure and the substrate. The metal compound layer is a continuous structure. Agate dielectric layer is disposed under the metal compound layer and contacts the substrate.

Abstract: A high electron mobility transistor (HEMT) includes a gallium nitride layer. An aluminum gallium nitride layer is disposed on the gallium nitride layer, wherein the aluminum gallium nitride layer comprises a tensile stress. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer between the source electrode and the drain electrode. At least one silicon oxide layer is embedded in the aluminum gallium nitride layer, wherein the silicon oxide layer is formed by a flowable chemical vapor deposition, and the silicon oxide layer increases the tensile stress in the aluminum gallium nitride layer.

Abstract: The present disclosure relates to a pixel circuit including a light emitting element, a driving circuit, a first data storage circuit and a second data storage circuit. The driving circuit is electrically coupled to the light emitting element. The first data storage circuit is electrically coupled to the driving circuit, and is configured to transmit a first data signal to the driving circuit during a first frame period, so that the driving circuit drives the light emitting element according to the first data signal. The second data storage circuit is electrically coupled to the driving circuit, and is configured to receive a second data signal during the first frame period.

Abstract: A high voltage transistor structure includes a substrate. A metal gate is disposed on the substrate. At least one insulating material structure penetrates the metal gate. A metal compound layer is disposed between the metal gate and the substrate, between the insulating material structure and the substrate. The metal compound layer is a continuous structure. Agate dielectric layer is disposed under the metal compound layer and contacts the substrate.

Abstract: A sensor placement optimization device is provided, which may include a preprocessing circuit and an operational circuit. The preprocessing circuit may perform a pre-process for the sensing signals of a plurality of temperature sensors, installed on a machine tool, to generate a pre-processed data. The operational circuit may execute a normalization for the pre-processed data to generate a normalized data, perform a principal component analysis for the normalized data to generate a dimensionality-reduced data and implement a principal component regression for the dimensionality-reduced data to obtain the contributions of the temperature sensors. Then, the operational circuit may rank the temperature sensors according to the contributions thereof to generate a ranking result and execute a screening process according to the ranking result to select at least one redundant sensor from the temperature sensors; afterward, the operational circuit may remove the redundant sensor from the temperature sensors.

Abstract: A method of fabricating a metal gate transistor includes providing a substrate. An interlayer dielectric layer covers the substrate. A dummy gate is embedded in the interlayer dielectric layer. A high-k dielectric layer is disposed between the dummy gate and the substrate. Later, the dummy gate is removed to form a trench, and the high-k dielectric layer is exposed through the trench. After the dummy gate is removed, an ion implantation process is performed to implant fluoride ions into the high-k dielectric layer. Finally, after the ion implantation process, a metal gate is formed to fill in the trench.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; removing the hard mask to form a first recess for exposing the barrier layer; removing the hard mask adjacent to the first recess to form a second recess; and forming a p-type semiconductor layer in the first recess and the second recess.

Abstract: A system includes an accelerator to accelerate the computations of nonlinear math functions. The accelerator includes a set of first evaluators and a set of second evaluators. Each of the first evaluators and the second evaluators is a fixed-function hardware circuit specialized for evaluating a respective nonlinear function. The system further includes a processor which decodes a math instruction in an instruction set, sends to the accelerator a signal identifying a nonlinear function corresponding to the math instruction, and receives an output of the nonlinear function from the accelerator. According to the signal, the accelerator evaluates the nonlinear function using one of the first evaluators. When the signal identifies the nonlinear function as a composite function, the accelerator additionally uses one of second evaluators on an output of the one first evaluator.

Abstract: A method of fabricating a metal gate transistor includes providing a substrate. An interlayer dielectric layer covers the substrate. A dummy gate is embedded in the interlayer dielectric layer. A high-k dielectric layer is disposed between the dummy gate and the substrate. Later, the dummy gate is removed to form a trench, and the high-k dielectric layer is exposed through the trench. After the dummy gate is removed, an ion implantation process is performed to implant fluoride ions into the high-k dielectric layer. Finally, after the ion implantation process, a metal gate is formed to fill in the trench.

Abstract: A machine tool health monitoring method which is to use a predetermined plurality of vibration sensors on a plurality of components of a machine tool and to drive motors of the machine tool to excite the machine tool using an electronic device while the health status of the machine tool is good, and then to perform a diagnostic process to obtain a characteristic cluster consisting of a plurality of modals, and then to define the characteristic cluster as a sample health characteristic cluster. The diagnostic process includes the procedures of vibration transmissibility obtaining, singular value decomposition, curve fitting and modal establishing. In addition, excite the machine tool and proceed the diagnosis process to obtain a current health characteristic cluster. Finally, the current health characteristic cluster is compared with the sample health characteristic cluster to judge whether the machine tool is healthy or not.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; removing the hard mask to form a first recess for exposing the barrier layer; removing the hard mask adjacent to the first recess to form a second recess; and forming a p-type semiconductor layer in the first recess and the second recess.