Abstract: An ion-electron mixed conductor ceramic comprises Ag-modified LLZTO ceramic; a preparation method of the ion-electron mixed conductor ceramic includes the following steps: adding LLZTO ceramic into a solution containing a soluble silver salt and a reducing agent to obtain silver oxide, and reacting the silver oxide under the action of the reducing agent to prepare the Ag-modified LLZTO ceramic; a composite solid electrolyte comprises the aforementioned ion-electron mixed conductor ceramic, a lithium salt and a polymer; a battery electrode material comprises the aforementioned ion-electron mixed conductor ceramic; a battery comprises the aforementioned ion-electron mixed conductor ceramic or the aforementioned solid electrolyte; when the modified ceramic is applied in electrode materials, it can simultaneously play a role in transporting electrons and ions, improve electrode kinetics, and has good application prospects in the battery field.

Abstract: Disclosed are compounds of formulae I and II, and pharmaceutically acceptable salts and prodrugs thereof, which are inhibitors of the complement system. Also provided are pharmaceutical compositions comprising such a compound, and methods of using the compounds and compositions in the treatment or prevention of a disease or condition characterized by aberrant complement system activity.

Abstract: A computing power scheduling method, a wearable device, and a storage medium are provided. The computing power scheduling method includes: when a first core obtains a first task, determining whether a computing power required by the first task exceeds a computing power range of the first core; when the computing power required by the first task exceeds the computing power range of the first core, determining a target computing power provider according to the computing power required by the first task, the computing power ranges of the N cores, and a computing power range of an electronic device, wherein the computing power required by the first task falls within a computing power range of the target computing power provider, and the target computing power provider is at least one of the electronic device and the N cores; and processing the first task by using the target computing power provider.

Abstract: An electronic device may include a display, such as flexible display. A display cover layer may overlap display layers in the display. The display may have an active area and an inactive area. A stiffener may support the cover layer in the inactive area, and an endcap may be coupled to the display cover layer in the inactive area. The endcap may be separated from the display layers by a gap. The stiffener may be a metal stiffener, or may be a thickened portion of the cover layer. The stiffener may include openings to form windows for optical components. Lenses may be coupled to the stiffener and/or the cover layer in the openings. Trim may be interposed between an edge of the cover layer and a device housing, and the edge of the cover layer may be separated from the trim by a gap.

Abstract: Disclosed are compounds of formula (I), and pharmaceutically acceptable salts thereof, which are inhibitors of the complement system. Also provided are pharmaceutical compositions comprising such a compound, and methods of using the compounds and compositions in the treatment or prevention of a disease or condition characterized by aberrant complement system activity.

Abstract: Disclosed are compounds of formula (I)-(IV), and pharmaceutically acceptable salts thereof, which are inhibitors of the complement system. Also provided are pharmaceutical compositions comprising such a compound, and methods of using the compounds and compositions in the treatment or prevention of a disease or condition characterized by aberrant complement system activity.

Abstract: An epitaxial wafer, a method for preparing the same and a display device are provided. The epitaxial wafer includes an N-type doped layer, a functional well structure and a P-type doped structure sequentially arranged in a stacked manner. The functional well structure includes a light emitting substructure, and the light emitting substructure includes a redundant barrier layer. The redundant barrier layer is disposed between the N-type doped layer and the P-type doped structure. The redundant barrier layer has the function of blocking electrons, avoiding a high electron concentration in the functional well structure.

Abstract: An epitaxial wafer, a method for preparing the same and a display device are provided. The epitaxial wafer includes an N-type doped layer, a functional well structure and a P-type doped structure arranged in a stacked manner. The functional well structure is disposed between the N-type doped layer and the P-type doped structure, and the functional well structure includes a light emitting substructure and a transition substructure disposed between the light emitting substructure and the N-type doped layer. In the light emitting substructure, the functional well structure is a multiple quantum well structure, and a barrier layer in the multiple quantum well structure has a weak blocking effect on holes, which can increase a migration distance of holes, thereby increasing the number of quantum wells emitting light and improving the light emitting efficiency of the epitaxial wafer.

Abstract: An epitaxial wafer, a method for preparing the same and a display device are provided. The epitaxial wafer includes an N-type doped layer, a functional well structure and a P-type doped structure arranged in a stacked manner. The functional well structure is disposed between the N-type doped layer and the P-type doped structure, and the functional well structure includes a light emitting substructure and a transition substructure disposed between the light emitting substructure and the N-type doped layer. In the light emitting substructure, the functional well structure is a multiple quantum well structure, and a barrier layer in the multiple quantum well structure has a weak blocking effect on holes, which can increase a migration distance of holes, thereby increasing the number of quantum wells emitting light and improving the light emitting efficiency of the epitaxial wafer.

Abstract: A base structure and a method for manufacturing the base structure, and a semiconductor device are provided. The base structure includes a substrate and a Group III-V superlattice layer. The Group III-V superlattice layer includes a plurality of lattice stack layers stacked on the substrate. A lattice stack layer includes at least two semiconductor layers, and a semiconductor layer includes a first Group III component and a second Group III component. In a same lattice stack layer, a proportion of the first Group III component in a semiconductor layer away from the substrate is less than a proportion of the first Group III component in a semiconductor layer proximate to the substrate. The Group III-V superlattice layer can effectively achieve structural relaxation between the substrate and an epitaxial structure, reduce dislocation density in the epitaxial structure and improve a performance of a device manufactured on the epitaxial structure.

Abstract: Disclosed are compounds of formula (I), and pharmaceutically acceptable salts thereof, which are inhibitors of the complement system. Also provided are pharmaceutical compositions comprising such a compound, and methods of using the compounds and compositions in the treatment or prevention of a disease or condition characterized by aberrant complement system activity.

Abstract: An electronic device may have a hinge that allows the device to be flexed about a bend axis. A display may span the bend axis. The device may have a stainless steel and/or carbon fiber reinforced polymer layer with slots. The slots may overlap the bend axis. The slots may have at least one property that varies in a non-linear manner as a function of position on the layer. The device may include an adhesive layer with a cutout that overlaps the slots. An interface that defines the cutout may have a plurality of recesses with varying depths. A flexible printed circuit may be attached to an edge of the display panel. The display cover layer may overlap a bonding region between the flexible printed circuit and the edge of the display panel. A UV-curable gap filler may be interposed between the flexible printed circuit and the display cover layer.

Abstract: An electronic device may have a hinge that allows the device to be flexed about a bend axis. A display may span the bend axis. The device may have a stainless steel and/or carbon fiber reinforced polymer layer with slots. The slots may overlap the bend axis. The slots may have at least one property that varies in a non-linear manner as a function of position on the layer. The device may include an adhesive layer with a cutout that overlaps the slots. An interface that defines the cutout may have a plurality of recesses with varying depths. A flexible printed circuit may be attached to an edge of the display panel. The display cover layer may overlap a bonding region between the flexible printed circuit and the edge of the display panel. A UV-curable gap filler may be interposed between the flexible printed circuit and the display cover layer.

Abstract: The present disclosure provides a hydraulic phosphogypsum (PG)-based cementitious material, and a preparation method and use thereof, belonging to the technical field of cementitious materials. The present disclosure provides a hydraulic PG-based cementitious material, including the following raw materials: modified PG particles and an auxiliary active powder, where the modified PG particles have a dosage of 50 wt % to 95 wt %; the modified PG particles are obtained by conducting modification on original PG particles through a calcareous material, and the calcareous material has a mass 3% to 5% of that of the original PG particles; and the original PG particles have typical dimensions of: a length of 50 ?m to 200 ?m and an aspect ratio of 1.5 to 5; and at least 80% of materials in the auxiliary active powder have a particle size of less than or equal to 60 ?m. In the present disclosure, the hydraulic PG-based cementitious material adopts a particle accumulation method of gap grading.

Abstract: A non-sintered high-strength lightweight aggregate one-shot prepared from sulfur-based and alkaline-based solid wastes by stirring, granulation, and foaming, and a preparation method therefor and use thereof. The non-sintered high-strength lightweight aggregate is prepared from a sulfur-based solid waste, an alkaline-based solid waste, an auxiliary cementing material, a ferro-aluminum-sulfur cementing material, water, and a foaming agent as raw materials. Based on the mass of the total solid, the total content of the sulfur-based solid waste, the alkaline-based solid waste, and the auxiliary cementing material is 80-90 wt %, and the content of the ferro-aluminum-sulfur cementing material is 10-20 wt %. The mass ratio of the water to the total solid is (15-20):(80-85). The foaming agent accounts for 0.3-0.7% of the mass of the total solid. The mass ratio between the sulfur-based solid waste, the alkaline-based solid waste, and the auxiliary cementing material is (27-33):(27-33):(18-25).

Abstract: Disclosed are compounds of formulae I and II, and pharmaceutically acceptable salts and prodrugs thereof, which are inhibitors of the complement system. Also provided are pharmaceutical compositions comprising such a compound, and methods of using the compounds and compositions in the treatment or prevention of a disease or condition characterized by aberrant complement system activity.

Abstract: In devices with flexible displays, multilayer adhesive stacks may be included. A multilayer adhesive may attach a flexible display panel to the display cover layer in an electronic device. Including multiple layers of adhesive in the adhesive stack (as opposed to a single layer) provides more degrees of freedom for the tuning and optimization of the properties of the adhesive stack. The multilayer adhesive stack therefore has better performance than if only a single layer of adhesive is used. The multilayer adhesive stack may include one or more layers of soft adhesive, hard adhesive, hard elastomer, hard polymer, and/or glass to optimize the mechanical and optical performance of the multilayer adhesive stack. Soft adhesive layers may be included to optimize lateral decoupling (e.g., during folding and unfolding) of the adhesive stack. Harder layers may be included to provide rigidity and prevent denting during impact events.

Abstract: Disclosed are compounds of formula I, II, III, and IV, and pharmaceutically acceptable salts thereof. The compounds are inhibitors of ALK2 kinase. Also provided are pharmaceutical compositions comprising a compound of formula I, II, III, or IV, or pharmaceutically acceptable salt thereof, and methods involving use of the compounds or pharmaceutically acceptable salts thereof and compositions in the treatment and prevention of various diseases and conditions, such as fibrodysplasia ossificans progressiva.

Abstract: Disclosed are compounds of formulae I and II, and pharmaceutically acceptable salts and prodrugs thereof, which are inhibitors of the complement system. Also provided are pharmaceutical compositions comprising such a compound, and methods of using the compounds and compositions in the treatment or prevention of a disease or condition characterized by aberrant complement system activity.

Abstract: The application provides a method for data reading and writing processing, data center, disaster recovery system and storage medium. The method includes receiving, by a first data center, a data reading request including a first user identification; determining, in response to the data reading request, whether a writing user identification set stored in the first data center includes the first user identification, the writing user identification set including user identifications corresponding to data writing requests; and under a condition that the writing user identification set includes the first user identification, forwarding the data reading request to a second data center, to read, in the second data center, data to be read as indicated by the data reading request, the second data center being configured to receive and process a data writing request sent by a user terminal or forwarded by the first data center.