Abstract: A method for manufacturing a capacitor includes the steps of a) forming a sacrificial layer over the etching stop layer, b) partially removing the sacrificial layer, the etching stop layer, and the dielectric layer to form a contact window, c) forming a first conducting layer over the sacrificial layer and in the contact window, d) partially removing the first conducting layer and the sacrificial layer to expose a portion of the sacrificial layer and retain a portion of the first conducting layer, e) forming a second conducting layer on tops and sidewalls of the portion of the first conducting layer and the portion of the sacrificial layer, f) partially removing the second conducting layer while retaining a portion of the second conducting layer alongside the portion of the first conducting layer and the portion of the sacrificial layer, and removing the portion of the sacrificial layer to expose the etching stop layer, and g) forming a rugged conducting layer on surfaces of the portion of the first conductin

Abstract: A method is provided for manufacturing a capacitor with a unique sturcture. The capacitor includes a structure formed in the dielectric layer and the etching stop layer and forming a contact window, a conducting material-adhering layer formed on a portion of the etching stop layer neighboring to the contact window, a first conducting layer filling in the contact window and upwardly extended to form a generally cross-sectionally modified T-shaped structure with a rough top surface, and a rugged conducting layer formed inside the first conducting layer and on the conducting material-adhering layer. This method significantly increases the density and intensity of the capacitor.

Abstract: A method for manufacturing a capacitor, applied to a memory unit having a substrate forming thereon a dielectric layer, includes the steps of a) forming a sacrificial layer over the dielectric layer, b) partially removing the sacrificial layer and the dielectric layer to form a contact window, c) forming a first conducting layer over the sacrificial layer and in the contact window, d) partially removing the first conducting layer and the sacrificial layer to expose a portion of the sacrificial layer and retain a portion of the first conducting layer, e) forming a second conducting layer alongside the portion of the first conducting layer and the portion of the sacrificial layer, f) removing the portion of the sacrificial layer to expose the dielectric layer, g) forming a third conducting layer over surfaces of the portion of the first conducting layer, the second conducting layer, and the dielectric layer, and h) partially removing the third conducting layer while retaining a portion of the third conducting l

Abstract: A driver circuit is to be used with an attachment unit interface in a network system and receives complementary data signals and an enable signal from constant current source and a differential transistor pair which includes a pair of differential transistors and a pair of load resistors. Each of the differential transistors has a gate terminal which receives one of the complementary data signals, a drain terminal which is connected to one of the load resistors, and a source terminal which is connected to the constant current source. A switch network is connected to the drain terminal of the differential transistors and is activated by the enable signal so as to generate a differential voltage output. Each of a pair of source followers has a gate terminal connected to the switch network and a source terminal The source followers receive the differential voltage output from the switch network.