Abstract: In an implementation, a data storage method comprises obtaining a write request by a processing apparatus, where the write request includes first data to be written. Determining based on at least one of an access feature and a service requirement of the first data, a first category of the first data at a current moment; and indicating the storage apparatus to store the first data in a first type of storage unit. The first category indicates a programming rate requirement of the first data, and the first type is determined based on the first category.

Abstract: A diamine monomer compound with reduced dielectric losses for better integrity and stability in digital transmissions is represented by a structural formula of wherein n1 is an integer greater than 1. A method for preparing the diamine monomer compound and a polyimide resin developed therefrom are disclosed. The diamine monomer compound introduces a long even numbered carbon chain and a liquid crystal unit structure, the long even numbered carbon chain giving flexibility, which reduces the regularity and rigidity of the molecular chain and facilitates film-forming processing. Dimensional stability is improved, and the coefficient of thermal expansion of the materials is reduced, the materials have good mechanical and heat-tolerant thermal properties, the loss factor and the coefficient of thermal expansion of the materials being reduced. A flexible film of the resin and an electronic device are also disclosed.

Abstract: A diamine monomer compound with a structural formula of wherein n1 is an integer greater than 1, forms the basis of a dielectric material with reduced dielectric losses for improved signals transmission. A method for preparing the compound, a polyimide resin made from the compound, a flexible film, and an electronic device including the polyimide resin are also disclosed. The compound has a long but flexible even numbered carbon chain and a liquid crystal unit structure. The reduced regularity and rigidity of the molecular chain make the polyimide resin convenient for film-forming. Dimensional stability is improved, the coefficient of thermal expansion of the materials is reduced, and the materials have good mechanical and thermal properties, the electron loss factor and coefficient of thermal expansion of the materials being reduced.

Abstract: Circlip pliers comprise a first plier and a second plier. The first plier is provided with an external connection portion, an internal connection portion, and a pivot portion located between the external connection portion and the internal connection portion. The second plier is provided with an external connection portion, an internal connection portion, and a second pivot portion located between the second external connection portion and the second internal connection portion. The external connection portions are adapted to insert into grip holes in an external circlip. The internal connection portions are adapted to insert into grip holes in an internal circlip. The first and second pivot portions are pivotally connected with each other.

Abstract: A wrench extender includes an extension member and a retaining member. The extension member has a wrench supporting base with a supporting face and first and second sides adjacent to the supporting face and respectively disposed at two opposite sides of the supporting face. The wrench supporting base is provided with a first holding portion arranged on the supporting face and adjacent to the first side, and a second holding portion arranged on the supporting face and adjacent to the second side. The retaining member is arranged on the wrench supporting base to retain a wrench hold by the wrench supporting base.

Abstract: An unmanned aerial vehicle (UAV) task cooperation method based on an overlapping coalition formation (OCF) game includes: constructing a sequential OCF game model for a UAV multi-task cooperation problem; using a bilateral mutual benefit transfer (BMBT) order that is biased toward the utility of a whole coalition to evaluate a preference of a UAV for a coalitional structure; optimizing task resource allocation of the UAV under an overlapping coalitional structure by using a preference gravity-guided Tabu Search algorithm to form a stable coalitional structure; and optimizing a transmission strategy based on the current coalitional structure, an updated status of a task resource allocation scheme of the UAV, and a current fading environment, so as to maximize task execution utility of a UAV network. The method quantifies characteristics of resource properties of the UAV and a task, and optimizes the task resource allocation of the UAV under the overlapping coalitional structure.

Abstract: A planetary gear train transmission device of a hybrid vehicle is provided, which belongs to the technical field of transmissions. A transmission device of a hybrid vehicle based on a planetary gear train, which has a simple structure and is convenient to maintain is provided. The transmission device is composed of two motors, two clutches, one simple planetary gear train, and one complex planetary gear train. One motor is mainly used for generating power, and the other motor is used for driving the vehicle to move forward and brake to recover energy. Selection of different speed ratios and different working modes can be achieved by means of different combinations of the clutches and the planetary gear trains and different working states of the engine and the two motors. The present disclosure is convenient to control, has a compact structure, and adopts a few of parts.

Abstract: A computing in memory (CIM) cell includes a memory cell circuit, a first semiconductor element, a second semiconductor element, and a third semiconductor element. A first terminal of the first semiconductor element is coupled to a first computing bit-line. A control terminal of the first semiconductor element is coupled to a computing word-line. A control terminal of the second semiconductor element is coupled to the memory cell circuit. A first terminal of the second semiconductor element is coupled to a second terminal of the first semiconductor element. A first terminal of the third semiconductor element is coupled to a second terminal of the second semiconductor element. A second terminal of the third semiconductor element is coupled to a second computing bit-line. A control terminal of the third semiconductor element receives a bias voltage.

Abstract: A semiconductor device includes a first doped zone and a second doped zone in a first semiconductor material, the first doped zone being separated from the second doped zone; an isolation structure between the first doped zone and the second doped zone; and a first line segment over a top surface of the first doped zone, where the ends of the first line segment and the ends of the second line are over the isolation structure. The first line segment and the second line segment have a first width; and a dielectric material is between the first line segment and the second line segment and over the isolation structure. The first width is substantially similar to a width of a gate electrode in the semiconductor device.

Abstract: Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes: applying an epoxy mold over a plurality of dies on the substrate in a dispenser tool; placing the substrate on a pedestal in a curing chamber, wherein the substrate has an expected post-cure deflection in a first direction; inducing a curvature on the substrate in a direction opposite the first direction; and curing the substrate by heating the substrate in the curing chamber.

Abstract: A method for manufacturing a semiconductor structure includes forming a plurality of dummy structures spaced apart from each other, forming a plurality of dielectric spacers laterally covering the dummy structures to form a plurality of trenches defined by the dielectric spacers, filling an conductive material into the trenches to form electrically conductive features, selectively depositing a capping material on the electrically conductive features to form a capping layer, removing the dummy structures to form a plurality of recesses defined by the dielectric spacers, filling a sacrificial material into the recesses so as to form sacrificial features, depositing a sustaining layer on the sacrificial features, and removing the sacrificial features to form air gaps confined by the sustaining layer and the dielectric spacers.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure. The first terminal comprises a tunneling layer formed on the substrate, a first conductive structure formed on the tunneling layer, and a dielectric structure formed on a top surface and on a first curved side surface of the first conductive structure. The semiconductor structure includes a second terminal coupled to the substrate. The second terminal comprises a second conductive structure formed on an isolation structure. The second conductive structure has a second curved side surface, and the dielectric structure is disposed between the first curved side surface and the second curved side surface.

Abstract: A method for deduplication applicable to a file chunked into a plurality of deduplicated chunks is provided and includes: defining a calculation range in the file according to types of the chunks in the file, where the calculation range includes a plurality of consecutive chunks in the file; generating an evaluation value according to the types of the chunks in the calculation range to determine whether to mark the chunks in the calculation range; and re-chunking and deduplicating the marked chunks in the file. A computer-readable medium and a file system corresponding to the method for deduplication are also provided.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure, with the first terminal including a first portion of a tunneling layer formed on the substrate, and a first gate formed on the first portion of the tunneling layer. The semiconductor structure includes a second terminal coupled to the substrate and adjacent to the first terminal, with the second terminal including a second portion of the tunneling layer formed on the substrate, a second gate formed on the second portion of the tunneling layer, and a dielectric structure formed on a top surface and side surfaces of the second gate. The semiconductor structure includes a third terminal coupled to an insulating structure and adjacent to the second terminal, with the third terminal including, a third gate formed on the insulating structure.

Abstract: A photoresist composition and manufacturing method thereof, a manufacturing method of a metal pattern, and a manufacturing method of an array substrate are provided. The photoresist composition includes a base material and an ion adsorbent, and the ion adsorbent is chelating resin.

Abstract: A non-sticking lip tipping paper is disclosed that includes a base paper, a color layer and a surface coating. The color layer is formed by printing and drying a color ink on the base paper; the surface coating includes a water-based glue and is coated thereon after drying the color layer. The water-based glue includes the following components by weight: 30-65 parts of a modified water-based resin solution, 10-20 parts of water, 8-15 parts of ethanol, and 5-12 parts of a water-based additive. The water-based additive is a mixture of a wax emulsion and magnesium silicate in a weight ratio of 1:5. A preparation method and a method of applying the non-sticking lip tipping paper are also disclosed.

Abstract: Systems, apparatuses, and methods for coverage improvements in wireless communication devices. A wireless communication device may be configured to selectively receive one of a plurality of paging signals, or a portion thereof, based on measured or expected coverage quality of communications from a base station. In some scenarios, the wireless communication device may provide an indication to the base station of which paging signal the wireless communication device will attempt to receive, such that the base station may include paging information directed to that UE only in the indicated paging signal. In some scenarios, the base station may include paging information directed to that UE in a plurality of paging signals, each of the paging signals including a different number of repetitions of the paging information. In some scenarios, the UE may receive only a portion of a paging signal including a plurality of repetitions of the paging information.

Abstract: Embodiments of the present invention provide a method and an apparatus for transmitting and receiving a client signal in an optical transport network. In the transmission method, a received client signal is mapped into a variable-rate container OTU-N, wherein a rate of the OTU-N is N times as high as a preset reference rate; and then, the variable-rate container OTU-N is split into N optical stab-channel transport units OTUsubs by column, where a rate of each OTUsub equals to the reference rate; next, the N optical sub-channel transport units OTUsubs are modulated onto one or more optical carriers; at last, the one or more optical carriers is transmitted through a fiber.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure. The first terminal comprises a tunneling layer formed on the substrate, a first conductive structure formed on the tunneling layer, and a dielectric structure formed on a top surface and on a first curved side surface of the first conductive structure. The semiconductor structure includes a second terminal coupled to the substrate. The second terminal comprises a second conductive structure formed on an isolation structure. The second conductive structure has a second curved side surface, and the dielectric structure is disposed between the first curved side surface and the second curved side surface.