Abstract: A pixel driving circuit includes a first transistor, a second transistor, and a first capacitor. The first transistor is configured to receive a data signal and drive a light emitting element based on the data signal. The first transistor includes a first gate terminal, a first source terminal, and a first drain terminal. The second transistor includes a second gate terminal receiving a first bias signal from a first bias source, a second source terminal coupled to the first transistor, and a second drain terminal coupled to the light emitting element. The first capacitor is disposed between the first gate terminal and the second gate terminal. The first transistor and the second transistor are different types of transistors.

Abstract: A rotorcraft has a drive system including a main rotor coupled to a main rotor gearbox to rotate the main rotor at a rotor speed, a main engine coupled to the drive system to provide a first power, a supplemental engine coupled, when a first clutch is engaged, to the drive system to provide a second power additive to the first power, and a control system operable to control the main engine and the supplemental engine to provide a total power demand, where the main engine is controlled based on variations in rotor speed and a power compensation command to produce the first power, and the supplemental engine is controlled to produce the second power in response to a supplemental power demand.

Abstract: A first optical network device groups a plurality of FlexO instance frames into one group, where each of the plurality of FlexO instance frames carries one OTU signal; then, performs multiplexing on the plurality of FlexO instance frames grouped into one group, to generate one first FlexO frame; next, performing scrambling and FEC processing on the first FlexO frame to generate one second FlexO frame and send it to a second optical network device. If a rate of the FlexO instance frame is 100 Gbps and two FlexO instance frames are grouped into one group, the 200 G optical module can be used in the transmission method.

Abstract: A method for manufacturing an interconnect structure includes: forming a first dielectric layer; forming a mask; patterning the first dielectric layer through the mask to form a trench, an inner surface of the trench having two first portions opposite to each other along an X direction, two second portions opposite to each other along a Y direction, and a bottom portion; forming a second dielectric layer over the mask and the patterned first dielectric layer, and along an inner surface of the trench; etching the second dielectric layer by directing an etchant in a predetermined direction such that a first part of the second dielectric layer on the two first portions and the bottom portion is removed, and a second part of the second dielectric layer on the second portions of the trench remains and is formed into two reinforcing spacers; and forming a trench-filling element.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, strained layers, source/drain contact patterns, a gate contact via, and source/drain contact vias. The gate structure is disposed over the semiconductor substrate. The strained layers are disposed aside the gate structure. The source/drain contact patterns are disposed on and electrically connected to the strained layers. Top surfaces of the source/drain contact patterns are coplanar with a top surface of the gate structure. The gate contact via is disposed on and electrically connected to the gate structure. The source/drain contact vias are disposed on and electrically connected to the source/drain contact patterns.

Abstract: The semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a first dielectric layer, a first metal layer, a second metal layer, a first etching stop layer, a second etching stop layer, a second dielectric layer, a first via and a second via. The first metal layer and the second metal are embedded in the first dielectric layer. The first etching stop layer is disposed on the first dielectric layer. The second etching stop layer is disposed on the first etching stop layer. The second dielectric layer is disposed on the second etching stop layer. The first via and the second via are embedded in the second dielectric layer. A width of the second etching stop layer is smaller a width of the first etching stop layer.

Abstract: A method for fabricating an integrated circuit device is provided. The method includes depositing a first dielectric layer; depositing a second dielectric layer over the first dielectric layer; etching a trench opening in the second dielectric layer, wherein the trench opening exposes a first sidewall of the second dielectric layer and a second sidewall of the second dielectric layer, the first sidewall of the second dielectric layer extends substantially along a first direction, and the second sidewall of the second dielectric layer extends substantially along a second direction different from the first direction in a top view; forming a via etch stop layer on the first sidewall of the second dielectric layer, wherein the second sidewall of the second dielectric layer is free from coverage by the via etch stop layer; forming a conductive line in the trench opening; and forming a conductive via over the conductive line.

Abstract: An apparatus and a method for neural network computation are provided. The apparatus for neural network computation includes a first neuron circuit and a second neuron circuit. The first neuron circuit is configured to execute a neural network computation of at least one computing layer with a fixed feature pattern in a neural network algorithm. The second neuron circuit is configured to execute the neural network computation of at least one computing layer with an unfixed feature pattern in the neural network algorithm. The performance of the first neuron circuit is greater than that of the second neuron circuit.

Abstract: A cell site device and an associated clock synchronization method are provided. The cell site device includes a clock synchronizer, a first processing circuit, and a second processing circuit. The clock synchronizer generates a first operation clock and a second operation clock. The first operation clock and the second operation clock have a specific synchronous relationship, and the clock synchronizer is adjusted by a synchronizer setting signal. The first processing circuit generates the synchronizer setting signal according to one of an external clock synchronization source and an internal clock signal. The clock synchronizer respectively transmits the first operation clock and the second operation clock to the first processing circuit and the second processing circuit. The first processing circuit generates a cross-unit periodic synchronization signal and transmits the cross-unit periodic synchronization signal to the second processing circuit.

Abstract: An all-oxide transistor structure includes a substrate, a first transistor, a second transistor, a third transistor and a fourth transistor. The substrate has an upper surface. The first transistor is disposed on the upper surface of the substrate. The second transistor is disposed on the upper surface of the substrate, wherein the second transistor is electrically connected to the first transistor. The third transistor is electrically connected to the second transistor and overlapped with the second transistor in a first direction, wherein the first direction is parallel to a normal direction of the upper surface of the substrate. The fourth transistor is disposed on the upper surface of the substrate, wherein the fourth transistor is electrically connected to the first transistor, the second transistor and the third transistor.

Abstract: A manufacturing method of a semiconductor structure including the following steps is provided. A first substrate is provided. A first dielectric structure is formed on the first substrate. At least one first cavity is formed in the first dielectric structure. A first stress adjustment layer is formed in the first cavity. The first stress adjustment layer covers the first dielectric structure. A second substrate is provided. A second dielectric structure is formed on the second substrate. At least one second cavity is formed in the second dielectric structure. A second stress adjustment layer is formed in the second cavity. The second stress adjustment layer covers the second dielectric structure. The first stress adjustment layer and the second stress adjustment layer are bonded.

Abstract: Embodiments of this application provide a service data processing method. The method includes: receiving service data, performing encapsulation, rate adaptation, and timeslot multiplexing on the service data by code block to obtain an intermediate frame, mapping the intermediate frame to an OTN frame, and sending the OTN frame. A size of the code block is a plurality of bytes, and the code block includes information indicating a code block type. If the code block is an overhead code block or a rate adaptation code block, the code block further includes information indicating a timeslot multiplexing layer at which the code block is located.

Abstract: A prying tool includes a prying end with a first prying member and a second prying member pivotally engaged with a main body of the prying tool. The first and the second prying members are pivotal toward and away from each other. The first prying member has a first claw and the second prying member has a second claw respectively. The first and the second prying members are pivotal between a first configuration in which first and the second claws are adjacent to each other and a second configuration in which the first and the second claws are away from each other.

Abstract: This application provides a data transmission method and an apparatus. The method includes: mapping service data to a data frame, and sending the data frame. The data frame includes K timeslot blocks, and each of the K timeslot blocks includes M bits and N*X bytes. Some or all of the M bits are used to carry N pieces of first indication information, and each of the N pieces of first indication information indicates that objects carried in every X bytes in the N*X bytes include at least one of service data or padding. K, N, and M each are an integer greater than or equal to 1, and X is an integer greater than 1.

Abstract: A wrench extender comprises an extension member, a handle, and an adjustable device, which includes two ratchet wheels disposed between the extension member and the handle, and a biasing member biasing between the two ratchet wheels. The two ratchet wheels are selectively adjusted between a closed position where the two ratchet wheels are abutted against each other and a separated position where the two ratchet wheels are separated and located away from each other. Each ratchet wheel is provided with a third ratchet portion on an outer periphery thereof, wherein the third ratchet portions of the two ratchet wheels are selectively engaged with the first ratchet portion of the extension member in the closed position or simultaneously engaged with the first and second ratchet portions in the separated position.

Abstract: A solar cell module includes a first substrate, a second substrate, at least one cell unit, a first packaging film, a second packaging film, a first protective layer, a second protective layer, and a plurality of support members. The first substrate and the second substrate are disposed opposite to each other. The cell unit is disposed between the first substrate and the second substrate. The first packaging film is disposed between the cell unit and the first substrate. The second packaging film is disposed between the cell unit and the second substrate. The first protective layer is disposed between the cell unit and the first packaging film. The second protective layer is disposed between the cell unit and the second packaging film. The support members are respectively disposed between the first packaging film and the second packaging film and surround at least two opposite sides of the cell unit.

Abstract: A compact ratchet wrench comprises a body and a ratchet head. The body has a head and a grip. A length between a distal end of the head and a rotation axis defines a front section length. A length between a distal end of the grip and the rotation axis defines a rear section length. An end of the ratchet head is provided with a driving portion. The driving portion has driving surfaces and a distance between two of the driving surfaces which are opposite to each other defines a drive width. The ratio of the front section length to the drive width is less than 2.5 and greater than or equal to 1. The ratio of the rear section length to drive width is less than 12 and greater than 4.

Abstract: A rapid adjustable wrench includes a body, a movable jaw, and an engaging device. The body has a fixed jaw, a sliding groove, and a containing recess. The movable jaw includes a sliding portion movably arranged in the sliding groove and a first toothed portion adjacent to the sliding portion. The engaging device includes an engaging member and a toggle switch. The engaging member is arranged in the containing recess and has a second toothed portion selectively engaged with the first toothed portion. One end of the toggle switch is connected to the engaging member. The toggle switch is able to drive the engaging member to move between an engaging position and a releasing position.

Abstract: A cell module is provided. The cell module includes a first substrate; a second substrate disposed opposite to the first substrate; a cell unit disposed between the first substrate and the second substrate; a first thermosetting resin layer disposed between the cell unit and the first substrate; a crosslinked polymer layer disposed between the cell unit and the first thermosetting resin layer; and a second thermosetting resin layer disposed between the cell unit and the second substrate. The crosslinked polymer layer includes a crosslinked polymer, and the crosslinked polymer has a crosslinking degree of from 35.4 to 67.4%.