Abstract: A method for generating driving signal is provided. The method includes generating by a first circuit, a first driving signal for a first frame of image, the first driving signal comprising a plurality of first pulse width modulation signals; transmitting the plurality of first pulse width modulation signals to a modulation controller; detecting a vertical synchronization signal; determining whether a most recent first pulse width modulation signal is partially generated when the vertical synchronization signal is detected; and upon determination that the most recent first pulse width modulation signal is partially generated, determining whether to delay generating a second driving signal for a second frame of image.

Abstract: A thin film transistor includes a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer has a first heavily doped region, a second heavily doped region, a third heavily doped region, an intrinsic region and a lightly doped region. The gate shields the intrinsic region and a first portion of the first heavily doped region. A second portion of the first heavily doped region is located outside an area of the gate. The source and the drain are electrically connected to the second heavily doped region and the third heavily doped region respectively. The source and the drain are arranged in a first direction. The first portion of the first heavily doped region and the gate have an overlapping region. A length of the overlapping region in the first direction is greater than a length of the intrinsic region in the first direction.

Abstract: A diffractive optical assembly includes an input coupler, an output coupler, and an image source. The output coupler is next to the input coupler. One of the input coupler and the output coupler has a most critical holographic optical element (HOE), and another one has a diffractive optical element (DOE). Bragg condition of the most critical HOE is more sensitive than Bragg condition of the DOE. The image source is configured to generate image light that is incident to the input coupler then propagates to the output coupler. The image light has incident angles to the input coupler and wavelengths corresponding to the incident angles. The wavelengths of the image light on the image source have a two-dimensional spatial distribution, such that relationships between the incident angles and the wavelengths of the image light comply with Bragg selectivity of the most critical HOE.

Abstract: A light field display apparatus includes a display element and a switching element. The display element has a plurality of pixels. The switching element is disposed on the display element. The switching element includes a polarizer, a liquid crystal layer, and a metalens array. The metalens array has a plurality of metalens units overlapping the plurality of pixels. The polarizer, the liquid crystal layer, and the metalens array are sequentially disposed on the plurality of pixels of the display element.

Abstract: A method for forming a semiconductor device structure includes forming a plurality of fin structures from a substrate, each fin structure having first and second semiconductor layers alternatingly stacked, forming an isolation region around the fin structures, forming a first liner layer on exposed surfaces of the fin structures and the isolation region, forming a second liner layer on the first liner layer, selectively removing a portion of the second liner layer so that the second liner layer remains over sidewall of each fin structure, forming an insulating layer on the first and second liner layers, removing the second liner layer, forming a sacrificial gate structure over a portion of the fin structure and the insulating layer, removing a portion of the fin structure not covered by the sacrificial gate structure, forming a source/drain feature such that a gap is formed around and separate the source/drain feature from the insulating layer, and forming a sealing material on the source/drain feature and th

Abstract: An electronic component includes a casing and an electronic element. The casing includes a bottom plate, a backplate, a first protrusion and a second protrusion. The bottom plate has a first surface. The backplate is connected with the bottom plate and perpendicular to the bottom plate. The backplate has a third surface and a fourth surface. The third surface and the fourth surface are opposite to each other. The first protrusion and the second protrusion are extended from the third surface of the backplate toward a direction parallel to the bottom plate, respectively. The electronic element is disposed on the first surface of the bottom plate and adjacent to the third surface of the backplate. The bottom plate, the backplate, the first protrusion and the second protrusion are disposed around the electronic element.

Abstract: Approaches described herein can determine one or more breathing phase patterns over a period of time using audio data captured by at least one microphone. The audio data can include one or more snores. A breathing phase pattern included within the period of time can be determined based at least in part on sensor data captured by one or more sensors in the electronic device. A determination can be made that a first breathing phase pattern represented by the audio data and a second breathing phase pattern represented by the sensor data are correlated. A determination can be made that the first breathing phase pattern represented by the audio data and the second breathing phase pattern represented by the sensor data both correspond to a user wearing the electronic device.

Abstract: An electric vehicle assembly includes an electric vehicle and a processing device. The electric vehicle includes a wheel, and an electric motor configured to drive the wheel to rotate and to output a value of torque force applied on the wheel and a speed measurement of the electric vehicle. The processing device stores a vehicle weight, and receives a value of torque force and two speed measurements of the electric vehicle from the electric motor, obtains an acceleration based on the speed measurements, obtains a current user weight based on the value of torque force, the acceleration and the vehicle weight, and outputs a notification when the current user weight is lower than an initial user weight by a predetermined ratio.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure. The first terminal comprises a tunneling layer formed on the substrate, a first conductive structure formed on the tunneling layer, and a dielectric structure formed on a top surface and on a first curved side surface of the first conductive structure. The semiconductor structure includes a second terminal coupled to the substrate. The second terminal comprises a second conductive structure formed on an isolation structure. The second conductive structure has a second curved side surface, and the dielectric structure is disposed between the first curved side surface and the second curved side surface.

Abstract: A chip package structure is provided. The chip package structure includes a redistribution structure and a first chip structure over the redistribution structure. The chip package structure also includes a first solder bump between the redistribution structure and the first chip structure and a first molding layer surrounding the first chip structure. The chip package structure further includes a second chip structure over the first chip structure and a second molding layer surrounding the second chip structure. In addition, the chip package structure includes a third molding layer surrounding the first molding layer, the second molding layer, and the first solder bump. A portion of the third molding layer is between the first molding layer and the redistribution structure.

Abstract: A method of generating an IC layout diagram includes receiving the IC layout diagram including an active region, a gate region extending across the active region from a first active region edge to a second active region edge, and a gate via positioned at a location along the gate region between the first and second active region edges, calculating a gate resistance value based on the location and first and second active region edges, based on the resistance value, modifying the IC layout diagram by changing the location of the gate via along the gate region and/or adding another gate via positioned at another location along the gate region, and storing the modified IC layout diagram in a storage device.

Abstract: An air fryer includes a machine body, a smoke box provided at the machine body, and a heating member provided at the machine body. The machine body includes a cooking cavity and an oil receiving tray located at one side of the cooking cavity and including a flow-passing member. The smoke boxy communicates with the cooking cavity through the flow-passing member. The heating member is configured to at least supply heat to the smoke box.

Abstract: A method of making a semiconductor device includes manufacturing lines extending in a first direction over doped zones in a substrate, wherein each of the lines has a line width measured along a first direction. The method further includes trimming the lines into line segments having ends over an isolation structure. The method further includes etching a transistor gate electrode over the substrate, wherein transistor gate electrode has a gate electrode width measured along the first direction, and the line width is substantially similar to the gate electrode width.

Abstract: A downlink control information (DCI), such as a blanking DCI (bDCI) message may be transmitted by a base station (e.g., eNB) and received by a mobile device (e.g., UE). The bDCI may indicate that the eNB will not transmit a subsequent DCI to the UE for a duration of time. The UE may be in continuous reception mode or connected discontinuous reception (C-DRX) mode. The UE may therefore determine to enter a sleep state or take other action. The bDCI may specify an explicit blanking duration, or an index indicating a blanking duration from a lookup table, and/or the blanking duration (and/or a blanking duration offset value) may be determined in advance, e.g., semi-statically. When the UE is in C-DRX mode, the UE may be configured such that either the sleep/wake period of the C-DRX mode or the blanking period of the bDCI may take precedence over the other.

Abstract: A semiconductor device structure and a formation method are provided. The method includes forming an opening in a semiconductor body, and the semiconductor body is p-type doped. The method also includes introducing n-type dopants into the semiconductor body to form a modified portion near the opening, and the modified portion is p-type doped. The method further includes forming a dielectric layer along the sidewalls and the bottom of the opening. In addition, the method includes forming a conductive structure over the dielectric layer to fill the opening.

Abstract: Various embodiments of the present application are directed towards an ion-sensitive field-effect transistor for enhanced sensitivity. In some embodiments, a substrate comprises a pair of first source/drain regions and a pair of second source/drain regions. Further, a first gate electrode and a second gate electrode underlie the substrate. The first gate electrode is laterally between the first source/drain regions, and the second gate electrode is laterally between the second source/drain regions. An interconnect structure underlies the substrate and defines conductive paths electrically shorting the second source/drain regions and the second gate electrode together. A passivation layer is over the substrate and defines a first well and a second well. The first and second wells respectively overlie the first and second gate electrodes, and a sensing layer lines the substrate in the first and second wells. In some embodiments, sensing probes are in the first well, but not the second well.

Abstract: A method includes etching a dielectric layer to form an opening. A first conductive feature underlying the dielectric layer is exposed to the opening. A sacrificial spacer layer is deposited to extend into the opening. The sacrificial spacer layer is patterned. A bottom portion of the sacrificial spacer layer at a bottom of the opening is removed to reveal the first conductive feature, and a vertical portion of the sacrificial spacer layer in the opening and on sidewalls of the dielectric layer is left to form a ring. A second conductive feature is formed in the opening. The second conductive feature is encircled by the ring, and is over and electrically coupled to the first conductive feature. At least a portion of the ring is removed to form an air spacer.

Abstract: A read voltage calibration method, a memory storage device, a memory control circuit unit are provided, including: reading, according to a first read command, a first physical unit based on a first read voltage level to obtain first data, and the first read voltage level is a default read voltage level corresponding to the first physical unit or a first voltage difference exists between the first read voltage level and the default read voltage level; decoding the first data to obtain first error bit information; reading, according to a second read command, the first physical unit based on a second read voltage level to obtain second data, and a second voltage difference exists between the second read voltage level and the default read voltage level; decoding the second data to obtain second error bit information; calibrating the default read voltage level according to the first and second error bit information.