Abstract: In an embodiment, a method includes forming a device layer over a first substrate; forming a first interconnect structure over a front-side of the device layer; attaching a second substrate to the first interconnect structure; forming a second interconnect structure over a back-side of the device layer, the second interconnect structure comprising back-side memory elements, wherein the back-side memory elements and a first plurality of active devices of the device layer provide a first memory array; and forming conductive connectors over the second interconnect structure.

Abstract: A method includes forming a fin structure over a bottom dielectric isolator and a substrate. The fin structure includes a bottom channel layer, a sacrificial layer over the bottom channel layer, and a top channel layer over the sacrificial layer. A dummy gate is formed across the fin structure. Portions of the fin structure not covered by the gate structure are removed to expose a top surface of the bottom dielectric isolator. First source/drain epitaxial structures are epitaxially grown over the bottom dielectric isolator and are connected to the bottom channel layer. Second source/drain epitaxial structures are epitaxially grown over the first source/drain epitaxial structures and are connected to the top channel layer. The dummy gate and the sacrificial layer are replaced with a gate structure.

Abstract: A semiconductor package includes an interposer that has a first side and a second side opposing the first side. A semiconductor device that is on the first side of the interposer and an optical device that is on the first side of the interposer and next to the semiconductor device. A first encapsulant layer includes a first portion and a second portion. The first portion of the first encapsulant layer is on the first side of the interposer and along sidewalls of the semiconductor device. A gap is between a first sidewall of the optical device and a second sidewall of the first portion of the first encapsulant layer. A substrate is over the second side of the interposer. The semiconductor device and the optical device are electrically coupled to the substrate through the interposer.

Abstract: A camera structure, including a lens holder, a lens frame and a plurality of balls. The lens holder has a holder body, one end of which has a first rolling groove. The first groove wall part and the second groove wall part are disposed on two sides of the first rolling groove, and the groove bottom is disposed between the first groove wall part and the second groove wall part. The lens frame is mounted on an outer side of the holder body. The plurality of balls are located inside the first rolling groove, wherein the first groove wall part and the second groove wall part support the plurality of balls, there is a gap between each of the plurality of balls and the groove bottom, and the plurality of balls lay between the lens holder and the lens frame.

Abstract: A semiconductor device and an isolation structure and a contact etch stop layer thereof are provided. According to an embodiment of the present disclosure, a semiconductor device is provided, which includes a first dielectric layer and a second dielectric layer. The first dielectric layer is deposited on the sidewall of an active device or formed in a trench of a gate structure. The second dielectric layer covers the first dielectric layer, wherein the dielectric constant of the first dielectric layer is between 2 and 2.5, and the dielectric constant of the second dielectric layer is less than or equal to 4. In some embodiments, a dielectric bilayer is composed of amorphous boron nitride and crystalline boron nitride.

Abstract: An antenna structure includes an upper patch antenna, a lower patch antenna, a grounding layer, a transmission line layer, and a first feeding line and a second feeding line passing through the grounding layer. Each of the first feeding line and the second feeding line includes a first portion, a second portion and a third portion. The first portion is disposed between the lower patch antenna and the grounding layer and is perpendicular to the grounding layer. The second portion is disposed between the grounding layer and the transmission line layer and is perpendicular to the grounding layer. The third portion is disposed within the grounding layer and is parallel to the grounding layer. The third portion is coupled between the first portion and the second portion.

Abstract: A chip package includes a semiconductor substrate, an anti-reflection layer, and a metal multi-layer. The semiconductor substrate has an optical sensing area. The anti-reflection layer is located on the semiconductor substrate. The metal multi-layer is located on and in contact with the anti-reflection layer. The metal multi-layer includes a redistribution line and two probe pads. Two ends of the redistribution line respectively extend to the two probe pads. The redistribution line is located in the optical sensing area, and the two probe pads are located outside the optical sensing area. The orthographic projection area of the redistribution line in the optical sensing area is less than 1% of the area of the optical sensing area.

Abstract: The present disclosure provides source/drain epitaxial structures and source/drain contacts wrapped with graphene layers in fin structures of field effect transistors, and fabricating methods thereof. In some embodiments, a disclosed semiconductor device includes a fin structure on a substrate. The fin structure includes an epitaxial region. The semiconductor device further includes a metal contact above the epitaxial region, and a graphene film covering a top surface and sidewalls of the epitaxial region and covering a bottom surface and sidewalls of the metal contact.

Abstract: An integrated coil module includes: a substrate; a plurality of inductor elements arranged on the substrate with a spacing distance between adjacent inductor elements, the inductor elements each including an iron core, first and second coils wound on the iron core, first and second flanges at two sides of the iron core, and a third flange arranged on the iron core and between the first and second flanges, the first flange including first and second electrodes, the second flange including third and fourth electrodes, the third flange including fifth and sixth electrodes; and a plate arranged atop the plurality of inductor elements to cover the inductor elements. As such, the plurality of inductor elements are integrated together as a one-piece structure to thereby simplify the SMT manufacturing process and shorten the spacing distance between the inductor elements so as to reduce the area of the substrate occupied thereby.

Abstract: A method includes: positioning a wafer on an electrostatic chuck of a physical vapor deposition apparatus, the wafer including an opening exposing a conductive feature; setting a temperature of the wafer to a room temperature; forming a tungsten thin film in the opening by the physical vapor deposition apparatus, the tungsten thin film including a bottom portion that is on an upper surface of the conductive feature exposed by the opening, a top portion that is on an upper surface of a dielectric layer through which the opening extends and a sidewall portion that is on a sidewall of the dielectric layer exposed by the opening; removing the top portion and the sidewall portion of the tungsten thin film from over the opening; and forming a tungsten plug in the opening on the bottom portion by selectively depositing tungsten by a chemical vapor deposition operation.

Abstract: Various systems, devices, storage media, and methods are discussed for selecting communication paths based upon health status in a hub and spoke communication network.

Abstract: A display device and a backlight control method of the display device are provided. When a duration of an image occlusion period is shorter than a preset duration, a backlight driving circuit is controlled to respectively provide a first pulse current and a second pulse current in a first light emitting period and a second light emitting period in each frame period, so as to drive a backlight unit to provide a first backlight and a second backlight. Here, the first pulse current is greater than the second pulse current.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.

Abstract: A chip package is provided. The chip package includes a device substrate, a first redistribution layer (RDL), a carrier base, and at least one conductive connection structure. The device substrate has at least one first through-via opening extending from the backside surface of the device substrate to the active surface of the device substrate. The first RDL is disposed on the backside surface of the device substrate and extends in the first through-via opening. The carrier base carries the device substrate, and has a first surface facing the backside surface of the device substrate and a second surface opposite the first surface. The conductive connection structure is disposed on the second surface of the carrier base and is electrically connected to the first RDL.

Abstract: A chip package includes a semiconductor substrate, a light-transmissive plate, a bonding layer, and a light-shielding layer. The bonding layer is located between the semiconductor substrate and the light-transmissive plate. The semiconductor substrate, the bonding layer, and the light-transmissive plate jointly define a sidewall including a first region and a second region. The first region extends from the semiconductor substrate to the light-transmissive plate, and is recessed relative to the second region. The light-shielding layer covers the sidewall and includes an extending portion, a wide portion, and a narrow portion. The extending portion is located on a surface of the semiconductor substrate facing away from the bonding layer. The wide portion is located on the first region of the sidewall. The narrow portion is located on the second region of the sidewall.

Abstract: A method for multiple executable binaries with static links is provided. The method includes a fixed binary generated from non-modified source program file has symbols of functions and variables with fixed addresses; a first modifiable binary generated from modified source program files has symbols of functions and variables with changed addresses; and a first reference table contains the symbols of functions and variables of the first modifiable binary which are referred by the fixed binary; wherein the first modifiable binary refers to the symbols of the fixed binary directly, and the fixed binary refers to the symbols of functions and the variables of the first modifiable binary through the first reference table at runtime.

Abstract: A BIOS setup environment configuration modification audit system includes a BIOS device that is included in a computing device and that is coupled to a component device in the computing device. The BIOS device enters a BIOS setup environment for the computing device and, while in the BIOS setup environment, detects component device configuration modification(s) to a configuration of the component device.

Abstract: The present disclosure provides a method that includes providing a semiconductor structure having a bottom channel region and a top channel region over the bottom channel region; forming a gate dielectric layer over and wrapping around top channels in the top channel region; performing a radical treatment on the dielectric layer in a supercritical fluid; and forming a metal gate electrode on the dielectric layer.

Abstract: An electronic device including a plurality of pixels and a driving element is provided. Each of the plurality of pixels includes a first sub-pixel, a second sub-pixel, and a third sub-pixel. The driving element drives each first sub-pixel of the plurality of pixels.

Abstract: An integrated circuit is provided, including a first transistor of a first conductivity type comprising first and second active regions, a second transistor of a second conductivity type comprising third and fourth active regions and arranged under the first transistor along a first direction, a first gate structure extending in the first direction and shared by the first and second transistors, an isolation layer sandwiched between the first and second transistors and extending along a second direction to pass through the first gate structure, and a connection layer surrounded by the isolation layer and extending along the second direction to pass through the first gate structure. The isolation layer has a first surface contacting the first and second active regions and a second surface contacting the third and fourth active regions. The connection layer comprises first and second portions are electrically coupled to the first and fourth active regions.