Abstract: A device including functional blocks and dummy cells. The functional blocks include a first functional block and a second functional block. Each dummy cell having a cell boundary defined by non-functioning active areas and non-functioning gates for filling space between the functional blocks and including a dummy cell configured to be situated between the first functional block and the second functional block such that the dummy cell directly abuts each of the first functional block and the second functional block.

Abstract: An integrated circuit structure includes a plurality of first and second cells, each first and second cell including corresponding two or more transistor devices. Each first cell has a first height. Each second cell has a second height, the second height at least 3 nanometers (nm) different from the first height. The cells are arranged in a plurality of rows, where a row includes a first cell and a second cell. An imaginary line passes through the first cell, and divides the first cell into a first upper portion having a first upper height and a first lower portion having a first lower height that are within 1 nm of each other. The imaginary line also divides the second cell into a second upper portion having a second upper height and a second lower portion having a second lower height that are within 1 nm of each other.

Abstract: Integrated circuits (IC) are provided. An IC includes a plurality of macros and a top channel arranged between the macros. Each macro includes a plurality of transistors with different gate lengths. The top channel includes a plurality of first and second sub-channels. Each first sub-channel is arranged between a first macro and a second macro, and is formed by a plurality of first dummy boundary cells. Each second sub-channel is arranged between two of the second macros, and is formed by a plurality of second dummy boundary cells. The macro boundaries of the first macros are formed by the first dummy boundary cells, and the macro boundaries of the second macros are formed by the second dummy boundary cells. A first gate length of dummy patterns within the first dummy boundary cells is different from a second gate length of dummy patterns within the second dummy boundary cells.

Abstract: Integrated circuits (IC) are provided. An IC includes a plurality of macros and a top channel. Each macro includes a macro boundary and a main pattern surrounded by the macro boundary. The top channel includes a plurality of first and second sub-channels. Each first sub-channel is arranged between a first macro and a second macro, and is formed by a plurality of first dummy boundary cells. Each second sub-channel is arranged between two of the second macros, and is formed by a plurality of second dummy boundary cells. The macro boundaries of the first macros are formed by the first dummy boundary cells, and the macro boundaries of the second macros are formed by the second dummy boundary cells. A first gate length of dummy patterns within the first dummy boundary cells is greater than a second gate length of dummy patterns within the second dummy boundary cells.

Abstract: Disclosed are semiconductor devices having an interconnection pattern that includes a plurality of parallel conductors including a first conductor aligned with a first axis and a first dummy pattern aligned with a second axis on a first side of the first axis and offset from the first axis by an axis offset distance LAO in which the first dummy pattern includes N dummy conductors having a first dummy conductor length LDC with the dummy conductors being separated by a dummy conductor-to-dummy conductor spacing EED.

Abstract: A device including functional blocks and dummy cells. The functional blocks include a first functional block and a second functional block. Each dummy cell having a cell boundary defined by non-functioning active areas and non-functioning gates for filling space between the functional blocks and including a dummy cell configured to be situated between the first functional block and the second functional block such that the dummy cell directly abuts each of the first functional block and the second functional block.

Abstract: Disclosed are semiconductor devices having an interconnection pattern that includes a plurality of parallel conductors including a first conductor aligned with a first axis and a first dummy pattern aligned with a second axis on a first side of the first axis and offset from the first axis by an axis offset distance LAO in which the first dummy pattern includes N dummy conductors having a first dummy conductor length LDC with the dummy conductors being separated by a dummy conductor-to-dummy conductor spacing EED.

Abstract: Disclosed are methods for designing semiconductor devices, conductive layer patterns, and interconnection layer patterns including the operations of analyzing an initial semiconductor design layout to identify excessive open spaces between adjacent conductive elements or lines within an interconnection layer pattern, selecting or generating a dummy pattern to fill a portion of the open space, and generating a modified semiconductor design layout that incorporates the dummy pattern into first interconnection layer pattern to reduce the open space.

Abstract: Integrated circuits (IC) are provided. An IC includes a plurality of macros and a top channel. Each macro includes a macro boundary and a main pattern surrounded by the macro boundary. The top channel includes a plurality of first and second sub-channels. Each first sub-channel is arranged between a first macro and a second macro, and is formed by a plurality of first dummy boundary cells. Each second sub-channel is arranged between two of the second macros, and is formed by a plurality of second dummy boundary cells. The macro boundaries of the first macros are formed by the first dummy boundary cells, and the macro boundaries of the second macros are formed by the second dummy boundary cells. A first gate length of dummy patterns within the first dummy boundary cells is greater than a second gate length of dummy patterns within the second dummy boundary cells.

Abstract: A system for designing an integrated circuit having pre-layout RC information is disclosed. The system includes: at least one processor; and at least one memory including computer program code for one or more programs, the at least one memory and the computer program code configured to, with the at least one processor, cause the system to: generate current and voltage information for a schematic having device array layout constraint included; create interconnection topology patterns and realizing route for the schematic; generate RC information according to the route; and determine if the schematic having the device array layout constraint and the RC information included violates one or more of the system design rule constraints. An associated method and a computer readable medium are also disclosed.

Abstract: Methods for inserting dummy boundary cells in an integrated circuit (IC) are provided. A plurality of macros and a top channel are merged into floorplan of the IC. The top channel is arranged between the macros and is filled with a plurality of first dummy boundary cells, and each of the macros includes a macro boundary and a main pattern surrounded by the macro boundary. The first dummy boundary cells within the top channel and between a first macro and a second macro are replaced with a plurality of second dummy boundary cells. The macro boundaries of the first and second macros are formed by the second dummy boundary cells. First gate length of dummy patterns within the first dummy boundary cells is greater than second gate length of dummy patterns within the second dummy boundary cells. The first and second dummy boundary cells are the same size.

Abstract: A system for designing an integrated circuit having pre-layout RC information is disclosed. The system includes: at least one processor; and at least one memory including computer program code for one or more programs, the at least one memory and the computer program code configured to, with the at least one processor, cause the system to: generate current and voltage information for a schematic having device array layout constraint included; create interconnection topology patterns and realizing route for the schematic; generate RC information according to the route; and determine if the schematic having the device array layout constraint and the RC information included violates one or more of the system design rule constraints. An associated method and a computer readable medium are also disclosed.

Abstract: A system for designing an integrated circuit having pre-layout RC information is disclosed. The system includes: at least one processor; and at least one memory including computer program code for one or more programs, the at least one memory and the computer program code configured to, with the at least one processor, cause the system to: generate current and voltage information for a schematic having device array layout constraint included; create interconnection topology patterns and realizing route for the schematic; generate RC information according to the route; and determine if the schematic having the device array layout constraint and the RC information included violates one or more of the system design rule constraints. An associated method and a computer readable medium are also disclosed.

Abstract: Methods for inserting dummy boundary cells in an integrated circuit (IC) are provided. A plurality of macros and a top channel are merged into floorplan of the IC. The top channel is arranged between the macros and is filled with a plurality of first dummy boundary cells, and each of the macros includes a macro boundary and a main pattern surrounded by the macro boundary. The first dummy boundary cells within the top channel and between a first macro and a second macro are replaced with a plurality of second dummy boundary cells. The macro boundaries of the first and second macros are formed by the second dummy boundary cells. First gate length of dummy patterns within the first dummy boundary cells is greater than second gate length of dummy patterns within the second dummy boundary cells. The first and second dummy boundary cells are the same size.

Abstract: A system for designing an integrated circuit having pre-layout RC information is disclosed. The system includes: at least one processor; and at least one memory including computer program code for one or more programs, the at least one memory and the computer program code configured to, with the at least one processor, cause the system to: generate current and voltage information for a schematic having device array layout constraint included; create interconnection topology patterns and realizing route for the schematic; generate RC information according to the route; and determine if the schematic having the device array layout constraint and the RC information included violates one or more of the system design rule constraints. An associated method and a computer readable medium are also disclosed.

Abstract: A system for designing an integrated circuit having pre-layout RC information is disclosed. The system includes: at least one processor; and at least one memory including computer program code for one or more programs, the at least one memory and the computer program code configured to, with the at least one processor, cause the system to: generate current and voltage information for a schematic having device array layout constraint included; create interconnection topology patterns and realizing route for the schematic; generate RC information according to the route; and determine if the schematic having the device array layout constraint and the RC information included violates one or more of the system design rule constraints. An associated method and a computer readable medium are also disclosed.

Abstract: Disclosed are methods for designing semiconductor devices, conductive layer patterns, and interconnection layer patterns including the operations of analyzing an initial semiconductor design layout to identify excessive open spaces between adjacent conductive elements or lines within an interconnection layer pattern, selecting or generating a dummy pattern to fill a portion of the open space, and generating a modified semiconductor design layout that incorporates the dummy pattern into first interconnection layer pattern to reduce the open space.

Abstract: A layout-generation method for an IC is provided. The layout-generation method includes accessing data of a schematic design of the IC; generating a hypergraph from the schematic design; transforming a plurality of constraints into a plurality of weighted edges in the hypergraph; continuing partitioning the hypergraph by the weighted edges until a plurality of multilevel groups are obtained to generate a layout; and verifying the layout to fabricate the IC.

Abstract: A system for designing an integrated circuit having pre-layout RC information is disclosed. The system includes: at least one processor; and at least one memory including computer program code for one or more programs, the at least one memory and the computer program code configured to, with the at least one processor, cause the system to: generate current and voltage information for a schematic having device array layout constraint included; create interconnection topology patterns and realizing route for the schematic; generate RC information according to the route; and determine if the schematic having the device array layout constraint and the RC information included violates one or more of the system design rule constraints. An associated method and a computer readable medium are also disclosed.

Abstract: An integration circuit (IC) simulation method includes: (a) providing a design netlist of a system-level circuit, wherein the system-level circuit comprises a first sub-circuit; (b) providing a first behavior model that is determined based on an operation of the first sub-circuit, wherein the first behavior model is a function of one or more respective behavior-level parameters; (c) incorporating a first variation into each of the one or more behavior-level parameters of the first behavioral model; and (d) simulating the system-level circuit based on the one or more behavior-level parameters of the first behavior model that incorporates the first variation.