Abstract: One or more computing devices, systems, and/or methods are provided. In an example, a first performance metric score may be determined based upon first content item text. A plurality of similarity scores associated with a plurality of sets of content item text may be determined. One or more sets of content item text may be selected from among the plurality of sets of content item text based upon the plurality of similarity scores and a plurality of performance metric scores associated with the plurality of sets of content item text. The plurality of performance metric scores may comprise one or more performance metric scores associated with the one or more sets of content item text. The one or more performance metric scores may be higher than the first performance metric score. One or more representations of the one or more sets of content item text may be displayed.

Abstract: A capacitor unit and a manufacturing process thereof are provided. The manufacturing process includes: providing a carrier; forming a metallic layer on the carrier, defining a plurality of metallic blocks in the metallic layer, and forming a middle stacking structure on each of the metallic blocks, wherein the middle stacking structure includes a first capacitance conductive layer, a second capacitance conductive layer, and a capacitance insulation layer located between the first and second capacitance conductive layers, wherein the first capacitance conductive layer is electrically connected to the corresponding one of the metallic blocks; and removing the carrier to expose the metallic blocks so as to form a plurality of independent capacitor units, so as to fabricate double sided capacitor units with high capacitance.

Abstract: A capacitor integrated structure, a capacitor unit and a manufacturing process thereof are provided. The manufacturing process of capacitor units includes the steps of: forming a plurality of capacitor stacking structures on a substrate having an insulation layer thereon; performing a first cut on insulation dividers provided between the adjacent capacitor stacking structures to form a plurality of recesses that expose first conductive portion and second conductive portion of each of the capacitor stacking structures; filling a metallic material in the recesses to form a plurality of metallic dividers that are electrically connected to the first conductive portion and the second conductive portion of each of the capacitor stacking structures; performing a second cut on the metallic dividers to form a plurality of independent capacitor units; and forming metallic walls on two opposite sides of each of the capacitor units, so as to provide a capacitor unit having two end electrodes.

Abstract: The disclosure provides a calibration assembly for a scan device. The calibration assembly includes a plurality of light-permeable plates and a reflection plate. The light-permeable plates are different in size, and the light-permeable plates are arranged along thicknesses directions thereof to form a step shape. The light-permeable plates define a plurality of light-permeable areas that respectively have different numbers of layers of the light-permeable plates inversely proportional to transmittances of the light-permeable areas. The light-permeable areas are configured to be permeable to a light having a predetermined frequency. The reflection plate is disposed at a side of one of the light-permeable plates in the thickness direction thereof. The reflection plate has a plurality of first holes having different sizes, and the reflection plate is configured to block the light having the predetermined frequency. The disclosure also provides a calibration system having the calibration assembly.

Abstract: A method of manufacturing a trench transistor structure including the following steps is provided. A substrate structure is provided. A first region and a second region are defined in the substrate structure. The substrate structure has a first trench located in the first region and a second trench located in the second region. A transistor device is formed in the first region. The transistor device includes an electrode located in the first trench. The electrode and the substrate structure are isolated from each other. An electrostatic discharge (ESD) protection device is formed in the second region. The ESD protection device includes a main body layer located in the second trench. The main body layer has a planarized top surface. PN junctions are located in the main body layer. The main body layer and the substrate structure are isolated from each other.

Abstract: A capacitor unit formed by a capacitor integrated structure is provided. The capacitor integrated structure is cut to form capacitor units separated from each other, and each of the capacitor units includes: a substrate; an isolation layer located on the substrate; a capacitor stacked structure located on the isolation layer, wherein the isolation layer electrically isolates the substrate from the capacitor stacked structure; and two electrode connectors located on the capacitor stacked structure and being exposed.

Abstract: A capacitor unit and a manufacturing method thereof are provided. The manufacturing method includes the following steps. An isolation layer is formed on a substrate. A first capacitor stacked structure and a second capacitor stacked structure are formed on the isolation layer. Electrode connectors are formed on the first capacitor stacked structure and the second capacitor stacked structure. The electrode connectors are exposed, so that the electrode connectors, the first capacitor stacked structure, the second capacitor stacked structure, the isolation layer, and the substrate are combined to form a capacitor integrated structure, wherein the isolation layer electrically isolates the substrate from the first capacitor stacked structure and the second capacitor stacked structure. The capacitor integrated structure is cut to form a first capacitor unit and a second capacitor unit separated from each other.

Abstract: An example non-transitory computer-readable storage medium comprises instructions that, when executed by a processing resource of a computing device, cause the processing resource to determine a portion of an interface moved from a first display to a second display. The instructions further cause the processing resource to compare the portion of the interface moved from the first display to the second display to a threshold. The instructions further cause the processing resource to move the interface automatically from the first display to the second display responsive to a determination that the portion of the interface moved to the second display exceeds the threshold.

Abstract: An example non-transitory computer-readable storage medium comprises instructions that, when executed by a processing resource of a computing device, cause the processing resource to present an interface of an application on a first display of the computing device. The instructions further cause the processing resource to, in response to receiving a selection of a boundary that defines a portion of the interface, present the portion on a second display of the computing device.

Abstract: The invention provides anti-KLK5 antibodies and methods of using the same.

Abstract: A method of manufacturing a trench transistor structure including the following steps is provided. A substrate structure is provided. A first region and a second region are defined in the substrate structure. The substrate structure has a first trench located in the first region and a second trench located in the second region. A transistor device is formed in the first region. The transistor device includes an electrode located in the first trench. The electrode and the substrate structure are isolated from each other. An electrostatic discharge (ESD) protection device is formed in the second region. The ESD protection device includes a main body layer located in the second trench. The main body layer has a planarized top surface. PN junctions are located in the main body layer. The main body layer and the substrate structure are isolated from each other.

Abstract: A capacitor is made using a wafer, and includes structural elevation portions to allow an electrode layer in the capacitor to be extended along surface profiles of the structural elevation portions to thereby increase its extension length, so as to reduce capacitor area, simplify capacitor manufacturing process and reduce manufacturing cost.

Abstract: A trench transistor structure includes a substrate structure, a transistor device, and an electrostatic discharge (ESD) protection device. A first region and a second region are defined in the substrate structure. The substrate structure has a first trench located in the first region and a second trench located in the second region. The transistor device is located in the first region and includes an electrode located in the first trench. The electrode and the substrate structure are isolated from each other. The ESD protection device is located in the second region and includes a main body layer located in the second trench. The main body layer has a planarized top surface. PN junctions are located in the main body layer. The main body layer and the substrate structure are isolated from each other.

Abstract: A sensing circuit with adaptive local reference generation of a resistive memory is configured to adaptively sense a first bit line current of a first bit line and a second bit line current of a second bit line via one sense amplifier. The sense amplifier has a first output node and a second output node. The adaptive local reference generator is electrically connected to the sense amplifier and generating a reference current equal to a sum of the second bit line current and a local reference current. A first bit line current flows through the first output node during a first bit line time interval. A second bit line current flows through the first output node during a second bit line time interval. The first bit line time interval is different from the second bit line time interval.

Abstract: A capacitor unit and a manufacturing method thereof, which mainly include a substrate, an isolation layer formed on the substrate, and capacitor stacked structures located on the isolation layer to form a capacitor integrated structure including the capacitor units, are provided. Therefore, the capacitor integrated structure can be cut to form a plurality of the capacitor units that can function as capacitors, thereby simplifying the capacitor manufacturing process and reducing the manufacturing cost.

Abstract: A trench transistor structure includes a substrate structure, a transistor device, and an electrostatic discharge (ESD) protection device. A first region and a second region are defined in the substrate structure. The substrate structure has a first trench located in the first region and a second trench located in the second region. The transistor device is located in the first region and includes an electrode located in the first trench. The electrode and the substrate structure are isolated from each other. The ESD protection device is located in the second region and includes a main body layer located in the second trench. The main body layer has a planarized top surface. PN junctions are located in the main body layer. The main body layer and the substrate structure are isolated from each other.

Abstract: An optical imaging lens set includes a first lens element with an object-side surface of a convex part in a vicinity of the optical axis, a second lens element with an image-side surface of a concave part in a vicinity of its periphery, the first lens element being glued to the second lens element to eliminate an air gap, a third lens element with an object-side surface of a concave part in a vicinity of its periphery, a fourth lens element and a fifth lens element of plastic material, ALT being the total thickness of the five lens elements and Gmax being the max value of the air gap from the first lens element to the fifth lens element so that ALT/Gmax?2.2.

Abstract: The invention provides anti-KLK5 antibodies and methods of using the same.

Abstract: A dynamic bit-line clamping circuit for computing-in-memory applications is configured to clamp a bit line via at least one reference signal and includes a clamping node, a first clamping unit, a second clamping unit, a first feedback controlling unit and a second feedback controlling unit. The first clamping unit is electrically connected between the bit line and the clamping node. The second clamping unit is electrically connected between the clamping node and a power source voltage and includes a switch. The second feedback controlling unit is electrically connected to the clamping node and the switch. The second feedback controlling unit generates a switching signal according to the at least one reference signal and a voltage level of the clamping node. The switch is switched by the switching signal so as to clamp the voltage level of the clamping node according to the at least one reference signal.

Abstract: An optical imaging lens set includes a first lens element with an object-side surface of a convex part in a vicinity of the optical axis, a second lens element with an image-side surface of a concave part in a vicinity of its periphery, the first lens element being glued to the second lens element to eliminate an air gap, a third lens element with an object-side surface of a concave part in a vicinity of its periphery, a fourth lens element and a fifth lens element of plastic material, ALT being the total thickness of the five lens elements and Gmax being the max value of the air gap from the first lens element to the fifth lens element so that ALT/Gmax?2.2.