Abstract: A method of forming a copper thin film by chemical vapor deposition, includes introducing a wafer into a chemical vapor deposition chamber; humidifying helium gas with water to form a wet helium gas for use as the atmosphere in the chemical vapor deposition chamber; depositing a copper seed layer at a wet helium flow rate of between about 5.0 sccm and 20.0 sccm during a wafer temperature rise from ambient temperature to between about 150° C. to 230° C.; and depositing a copper thin film layer at a wet helium flow rate of between about 0.2 sccm to 1.0 sccm and at a temperature of between about 150° C. to 230° C.

Abstract: A method of making a precursor for a thin film formed by chemical vapor deposition processes, includes mixing ZCl4 with H(tmhd)3 solvent and benzene to form a solution, where Z is an element taken from the group of elements consisting of hafnium and zirconium; refluxing the solution for twelve hours in an argon atmosphere; removing the solvents via vacuum, thereby producing a solid compound; and sublimating the compound at 200° C. in a near vacuum of 0.1 mmHg. A ZOx precursor, for use in a chemical vapor deposition process, includes a Z-containing compound taken from the group of compounds consisting of ZCl(tmhd)3 and ZCl2(tmhd)2.

Abstract: A method of forming an electrode and a ferroelectric thin film thereon, includes preparing a substrate; depositing an electrode on the substrate, wherein the electrode is formed of a material taken from the group of materials consisting of iridium and iridium composites; and forming a single-phase, c-axis PGO ferroelectric thin film thereon, wherein the ferroelectric thin film exhibits surface smoothness and uniform thickness.

Abstract: A method for chemical vapor deposition of copper metal thin film on a substrate includes heating a substrate onto which the copper metal thin film is to be deposited in a chemical vapor deposition chamber; vaporizing a precursor containing the copper metal, wherein the precursor is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene; introducing the vaporized precursor into the chemical vapor deposition chamber adjacent the heated substrate; and condensing the vaporized precursor onto the substrate thereby depositing copper metal onto the substrate. A copper metal precursor for use in the chemical vapor deposition of a copper metal thin film is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene taken from the group of alkenes consisting of 1-pentene, 1-hexene and trimethylvinylsilane.

Abstract: A method is provided for synthesizing relatively pure (hfac)Cu(I)L precursors which can be directly used for CVD copper thin film deposition applications without further purification. The new synthesis method can be applied to the synthesis of copper precursors having ligands such as 1-pentene or 1-hexene. The synthesis method is based on providing a stoichiometric excess of Cu2O and L as initial reactants, compared to the amount of H(hfac) initially provided. The reaction is carried out at a low temperature, which reduces the occurrence of undesirable side-reactions that would reduce the purity of the copper precursor produced. The reaction has a large synthesis window which enhances the repeatability of the synthesis method so as to meet the requirements of large scale manufacturing production.

Abstract: A method of synthesizing a PGO spin-coating precursor solution includes utilizing the starting materials of lead acetate trihydrate (Pb(OAc)2.3H2O) and germanium alkoxide (Ge(OR)4(R=C2H5 and CH(CH3)2)). The organic solvent is di(ethylene glycol) ethyl ether. The mixed solution of lead and di(ethylene glycol) ethyl ether is heated in an atmosphere of air at a temperature no greater than 185° C., and preferably no greater than 190° C. for a time period in a range of thirty minutes to four hours. During the heating step the color of the solution is monitored to determine when the reaction is complete and when decomposition of the desired product begins to take place. The solution is then added to germanium di(ethylene glycol) ethyl ether to make the PGO spin-coating solution. This second step also entails heating the solution to a temperature no greater than 190° C. for a time period in a range of 0.5 to 2.0 hours.

Abstract: A fabrication process provides for achieving high adhesion of CVD copper thin films on metal nitride substrates, and in particular, on substrates having an outermost TaN layer. The method comprises introducing a certain amount of water vapor to the initial copper thin film deposition stage and reducing the amount of fluorine in the interface of the copper and metal nitride substrate. These two process steps result in a copper thin film having improved adhesion to metal nitride substrates, including TaN substrates.

Abstract: A thin film structure includes a substantially single-phase, c-axis PGO film on an insulator for use in metal ferroelectric insulator semiconductor single transistor nonvolatile memory applications. The PGO on insulator structure can also be used in capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices. In a preferred embodiment, the PGO film is deposited on a Zirconium Oxide insulator layer.

Abstract: A method of cleaning a metal oxide thin film on a silicon wafer, includes dipping the wafer in an organic solvent; drying the wafer in a nitrogen atmosphere; and stripping any photoresist from the wafer in an oxygen atmosphere under partial vacuum at a temperature of about 200° C. The wafer may also be cleaned by dipping in a polar organic solvent and subjecting the wafer to ultrasound while immersed in the solvent.

Abstract: A thin film structure includes a substantially single-phase, c-axis PGO film on an insulator for use in metal ferroelectric insulator semiconductor single transistor non-volatile memory applications. The PGO on insulator structure can also be used in capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices. In a preferred embodiment, the PGO film is deposited on a Zirconium Oxide insulator layer.

Abstract: Methods of forming hafnium oxide, zirconium oxide and nanolaminates of hafnium oxide and zirconium oxide are provided. These methods utilize atomic layer deposition techniques incorporating nitrate-based precursors, such as hafnium nitrate and zirconium nitrate. The use of these nitrate based precursors is well suited to forming high dielectric constant materials on hydrogen passivated silicon surfaces.

Abstract: A method of preparing a PGO solution for spin coating includes preparing a 2-methoxyethanol organic solvent; adding Pb(OCH3CO)2.3H2O to the organic solvent at ambient temperature and pressure in a nitrogen-filled glaved box to form Pb in methoxyethanol; refluxing the solution in a nitrogen atmosphere at 150° C. for at least two hours; fractionally distilling the refluxed solution at approximately 150° C. to remove all of the water from the solution; cooling the solution to room temperature; determining the Pb concentration of the solution; adding the 2-methoxyethanol solution to the Pb 2-methoxyethanol until a desired Pb concentration is achieved; combining Ge(OR)4, where R is taken the group of Rs consisting of CH2CH3 and CH(CH3)2, and 2-methoxyethanol; and adding Ge(OR)4 2-methoxyethanol to PbO 2-methoxyethanol to form the PGO solution having a predetermined metal ion concentration and a predetermined Pb:Ge molar ration.

Abstract: A method of fabricating a one-transistor memory includes, on a single crystal silicon substrate, depositing a bottom electrode structure on a gate oxide layer; implanting ions to form a source region and a drain region and activating the implanted ions spin coating the structure with a first ferroelectric layer; depositing a second ferroelectric layer; and annealing the structure to provide a c-axis ferroelectric orientation.

Abstract: An Ir—M—O composite film has been provided that is useful in forming an electrode of a ferroelectric capacitor, where M includes a variety of refractory metals. The Ir combination film is resistant to high temperature annealing in oxygen environments. When used with an underlying barrier layer made from the same variety of M transition metals, the resulting conductive barrier also suppresses to diffusion of Ir into any underlying Si substrates. As a result, Ir silicide products are not formed, which degrade the electrode interface characteristics. That is, the Ir combination film remains conductive, not peeling or forming hillocks, during high temperature annealing processes, even in oxygen. The Ir—M—O conductive electrode/barrier structures are useful in nonvolatile FeRAM devices, DRAMs, capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices.

Abstract: A method of forming a volatile copper precursor for chemical vapor deposition of copper metal thin film includes formation of a volatile liquid having a chemical formula of (n-R-m-cyclohexene)Cu(I)(hfac) or (n-R-m-cyclopentene)Cu(I)(hfac), where n,m=1-6, and where R is a alkyl, such as methyl and ethyl.

Abstract: A Cu(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.

Abstract: A Cub(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.

Abstract: A method for using a Cu(hfac) precursor with a substituted phenylethylene ligand to form an adhesive seed layer on an IC surface has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be especially adhesive. Copper deposited with this precursor has low resistivity and high adhesive characteristics. The seed layer provides a foundation for subsequent Cu layers deposited through either CVD, PVD, or electroplating. The adhesive seed layer permits the subsequent Cu layer to be deposited through an economical high deposition rate process.

Abstract: An Ir—M—O composite film has been provided that is useful in forming an electrode of a ferroelectric capacitor, where M includes a variety of refractory metals. The Ir combination film is resistant to high temperature annealing in oxygen environments. When used with an underlying barrier layer made from the same variety of M transition metals, the resulting conductive barrier also suppresses to diffusion of Ir into any underlying Si substrates. As a result, Ir silicide products are not formed, which degrade the electrode interface characteristics. That is, the Ir combination film remains conductive, not peeling or forming hillocks, during high temperature annealing processes, even in oxygen. The Ir—M—O conductive electrode/barrier structures are useful in nonvolatile FeRAM devices, DRAMs, capacitors, pyroelectric infrared sensors, optical displays, optical switches, piezoelectric transducers, and surface acoustic wave devices.

Abstract: A metal(hfac), alkene ligand precursor has been provided. The alkene ligand includes double bonded carbon atoms, with first and second bonds to the first carbon atom, and third and fourth bonds to the second carbon atom. The first, second, third, and fourth bonds are selected from a the group consisting of H, C.sub.1 to C.sub.8 alkyl, C.sub.1 to C.sub.8 haloalkyl, and C.sub.1 to C.sub.8 alkoxyl. As a general class, these precursors are capable of high metal deposition rates and high volatility, despite being stable in the liquid phase at low temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described alkene ligand class of metal precursors.