Abstract: A device for wireless communication is provided. The device comprises a processor configured to: send a request to an first base station for connection status of a user device; send a sensing command to the first base station to scan an area in a coverage of the first base station to generate environment feature data; perform a neural network inference according to the environment feature data to generate a predicted position of the user device; and control a first reconfiguration intelligent surface (RIS) device according to the predicted position.

Abstract: A semiconductor structure includes a semiconductor fin protruding from a substrate; a gate structure engaging with the semiconductor fin. The semiconductor structure also includes an interlayer dielectric (ILD) layer disposed over the substrate and adjacent to the gate structure, where a top surface of the gate structure is below a top surface of the ILD layer; a first metal layer in direct contact with a top surface of the gate structure; a second metal layer disposed over the first metal layer, where the first metal layer is disposed on bottom and sidewall surfaces of the second metal layer, where the bottom surface of the second metal layer has a concave profile, and where the second metal layer differs from the first metal layer in composition; and a gate contact disposed over the second metal layer.

Abstract: A method and an electronic device of matching a mobile device with an object are provided. The method includes: receiving first positioning information of a first mobile device and first sensed information of a first object; determining whether the first mobile device and the first object are located in a first area according to the first positioning information and the first sensed information; in response to determining the first mobile device and the first object are located in the first area, matching the first mobile device with the first object to generate a matching result; and outputting the matching result.

Abstract: A flow guiding device for a carbon capture system includes a connecting unit and a flow guiding unit connected to the connecting unit. The connecting unit includes a communicating member defining a gas flow channel, a main housing diverging gradually from the communicating member, and a gas rectifier disposed opposite to the communicating member and having a plurality of air holes. The flow guiding unit includes a guiding member defining an flow channel in fluid communication with the gas flow channel and having a plurality of through holes in fluid communication with the flow channel, a main body diverging gradually from the guiding member, and a flow disturbing member disposed at a terminal portion of the main body and having a plurality of flow distributing holes. The main body cooperates with the main housing to define an annular flow channel therebetween that is in fluid communication with the through holes.

Abstract: A method for producing an energetic gas from carbon dioxide includes the steps of: impregnating a plurality of alumina particles into a nickel-based aqueous solution to form a crude product, followed by subjecting the crude product to a drying treatment and then to a calcination treatment at a temperature ranging from 550° C. to 650° C., so as to obtain a supported catalyst; activating the supported catalyst with hydrogen, so as to obtain an activated supported catalyst; and subjecting hydrogen and carbon dioxide to a methanation reaction at a total gas hourly space velocity ranging from 4000 h?1 to 5000 h?1 in the presence of the activated supported catalyst, so as to form methane serving as an energetic gas.

Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, an exemplary semiconductor structure includes a gate structure. The gate structure includes a gate dielectric layer, an n-type work function layer embedded in the gate dielectric layer, a dielectric capping layer embedded in the n-type work function layer, and a p-type work function layer embedded in the dielectric capping layer. A top surface of the gate structure exposes the n-type work function layer, the dielectric capping layer, and the p-type work function layer. The semiconductor structure also includes a first metal cap on the n-type work function layer and a second metal cap on the p-type work function layer. The first metal cap is spaced apart from the second metal cap. without formed on the dielectric capping layer.

Abstract: A method according to the present disclosure includes providing a substrate that includes a dummy gate stack wrapping over an active region, and a spacer layer extending along sidewalls of the dummy gate stack, selectively removing the dummy gate stack to form a gate trench exposing the active region, depositing a gate dielectric over the active region, depositing at least one work function layer over the gate dielectric layer, depositing a tungsten layer over the at least one work function layer, and depositing a tungsten nitride layer over the tungsten layer.

Abstract: A semiconductor device includes an active region. A metal gate electrode is disposed over the active region. A conductive layer is disposed over the metal gate electrode. A silicon-containing layer is disposed over a first portion of the conductive layer. A dielectric layer is disposed over a second portion of the conductive layer. A gate via vertically extends through the silicon-containing layer. The gate via is disposed over, and electrically coupled to, the metal gate electrode.

Abstract: Embodiments provide a replacement metal gate in a FinFET or nanoFET which utilizes a conductive metal fill. The conductive metal fill has an upper surface which has a fin shape which may be used for a self-aligned contact.

Abstract: A driving mechanism is provided, including a fixed part, a movable part for holding an optical element, a driving assembly, a circuit board, and conductive element. The driving assembly is used for driving the movable part to move relative to the fixed part. The circuit board is disposed on the fixed part, having a conductive portion exposed to an outer surface of the circuit board. The conductive element forms a longitudinal end portion not parallel to the outer surface of the circuit board, wherein the conductive element is electrically connected to the driving assembly and the conductive portion of the circuit board.

Abstract: A semiconductor device includes stacks of nano-structures that each extend in a first horizontal direction. The stacks each extend in a vertical direction and are separated from one another in a second horizontal direction. A first gate is disposed over a first subset of the stacks. A second gate is disposed over a second subset of the stacks. A first conductive capping layer is disposed over a substantial entirety of an upper surface of the first gate. A second conductive capping layer is disposed over a substantial entirety of an upper surface of the second gate. A dielectric structure is disposed between the first gate and the second gate in the second horizontal direction. The dielectric structure physically and electrically separates the first gate and the second gate. An upper surface of the dielectric structure is substantially free of having the first or second conductive capping layers disposed thereon.

Abstract: A semiconductor device includes stacks of nano-structures that each extend in a first horizontal direction. The stacks each extend in a vertical direction and are separated from one another in a second horizontal direction. A first gate is disposed over a first subset of the stacks. A second gate is disposed over a second subset of the stacks. A first conductive capping layer is disposed over a substantial entirety of an upper surface of the first gate. A second conductive capping layer is disposed over a substantial entirety of an upper surface of the second gate. A dielectric structure is disposed between the first gate and the second gate in the second horizontal direction. The dielectric structure physically and electrically separates the first gate and the second gate. An upper surface of the dielectric structure is substantially free of having the first or second conductive capping layers disposed thereon.

Abstract: A semiconductor structure and a method of forming the same are provided. In an embodiment, an exemplary semiconductor structure includes a gate structure. The gate structure includes a gate dielectric layer, an n-type work function layer embedded in the gate dielectric layer, a dielectric capping layer embedded in the n-type work function layer, and a p-type work function layer embedded in the dielectric capping layer. A top surface of the gate structure exposes the n-type work function layer, the dielectric capping layer, and the p-type work function layer. The semiconductor structure also includes a first metal cap on the n-type work function layer and a second metal cap on the p-type work function layer. The first metal cap is spaced apart from the second metal cap. without formed on the dielectric capping layer.

Abstract: A method for producing a sustainable aviation fuel includes (a) subjecting a feedstock containing an oil to a first reaction with hydrogen in the presence of a first catalyst so that the oil is hydrogenated to saturation and deoxygenated, thereby obtaining a first product containing hydrocarbons, the first reaction being carried out at a temperature ranging from 385° C. to 415° C.; and (b) subjecting the first product to a second reaction with hydrogen in the presence of a second catalyst so that the hydrocarbons in the first product are cracked and isomerized, thereby obtaining the sustainable aviation fuel, the second catalyst including a silicoaluminophosphate-11 (SAPO-11) carrier loaded with nickel and citric acid, the nickel being present in an amount ranging from 12 wt % to 30 wt % based on 100 wt % of the second catalyst.

Abstract: A method for producing an energetic gas from carbon dioxide includes the steps of: impregnating a plurality of alumina particles into a nickel-based aqueous solution to form a crude product, followed by subjecting the crude product to a drying treatment and then to a calcination treatment at a temperature ranging from 550° C. to 650° C., so as to obtain a supported catalyst; activating the supported catalyst with hydrogen, so as to obtain an activated supported catalyst; and subjecting hydrogen and carbon dioxide to a methanation reaction at a total gas hourly space velocity ranging from 4000 h?1 to 5000 h?1 in the presence of the activated supported catalyst, so as to form methane serving as an energetic gas.

Abstract: An optical element driving mechanism is provided, including a fixed part, a movable part, a metallic member and a driving assembly. The fixed part includes a base. The movable part is movably connected to the fixed part, and carries an optical element, the optical element has an optical axis. The metallic member is disposed on the base, and includes an inner electrical connection part and an outer electrical connection part, the inner electrical connection part and the outer electrical connection part are connected to each other. The driving assembly includes at least one driving magnetic element and drives the movable part to move relative to the fixed part.

Abstract: A flow guiding device for a carbon capture system includes a connecting unit and a flow guiding unit connected to the connecting unit. The connecting unit includes a communicating member defining a gas flow channel, a main housing diverging gradually from the communicating member, and a gas rectifier disposed opposite to the communicating member and having a plurality of air holes. The flow guiding unit includes a guiding member defining an flow channel in fluid communication with the gas flow channel and having a plurality of through holes in fluid communication with the flow channel, a main body diverging gradually from the guiding member, and a flow disturbing member disposed at a terminal portion of the main body and having a plurality of flow distributing holes. The main body cooperates with the main housing to define an annular flow channel therebetween that is in fluid communication with the through holes.