Patents by Inventor Weifeng Sun

Weifeng Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12107167
    Abstract: The present invention discloses a high-threshold power semiconductor device and a manufacturing method thereof. The high-threshold power semiconductor device includes, in sequence from bottom to top: a metal drain electrode, a substrate, a buffer layer, and a drift region; further including: a composite column body which is jointly formed by a drift region protrusion, a columnar p-region and a columnar n-region on the drift region, a channel layer, a passivation layer, a dielectric layer, a heavily doped semiconductor layer, a metal gate electrode and a source metal electrode. The composite column body is formed by sequentially depositing a p-type semiconductor layer and an n-type semiconductor layer on the drift region and then etching same. The channel layer and the passivation layer are formed in sequence by deposition. Thus, the above devices are divided into a cell region and a terminal region.
    Type: Grant
    Filed: January 20, 2021
    Date of Patent: October 1, 2024
    Assignee: SOUTHEAST UNIVERSITY
    Inventors: Siyang Liu, Weifeng Sun, Chi Zhang, Shuxuan Xin, Shen Li, Le Qian, Chen Ge, Longxing Shi
  • Publication number: 20240295149
    Abstract: An in-situ detection robot and method for geological information without disturbance of in-situ stress, including a sleeve, a drilling unit set at the top of the sleeve, a dumping unit set inside the sleeve, and a support propulsion unit is set outside the sleeve, the top of the dumping unit extends into the drilling unit, a detection unit is set between the drilling unit and the support propulsion unit, and the robot tail is connected to a control unit; the dumping unit is used to discharge soil drilled from a hole of the drilling unit to the ground, the support propulsion unit is used to realize support, the detection unit is used to detect geological information of surrounding environment of the robot, the control unit is used to control the drilling unit, the support propulsion unit and the detection unit, and the control unit collects and processes the geological information.
    Type: Application
    Filed: December 6, 2023
    Publication date: September 5, 2024
    Applicant: Chang'an University
    Inventors: Hengxing LAN, Mervyn LAN, Bolong LI, Zhonghong DONG, Hongbing ZHANG, Weifeng SUN, Bei ZHANG
  • Patent number: 12080186
    Abstract: A high-speed remote landslide simulation test device with a variable angle includes a support adjustment component, slide plates, and loose leaves. The device first transmits the operation paths of adjusting the slide plate at different angles to the controller, and the personnel operates the control panel to control the support jack, the motor, and the electromagnet to start and stop through the controller, the output shaft of the motor drives the stainless steel threaded rod to rotate, the controller first energizes one electromagnet and disconnects the other three electromagnets, which can only make the stainless steel threaded rod rotate in a fixed position inside the inner threaded pipe, and the three inner threaded pipes follow the rotation direction of the stainless steel threaded rod, thus, the position of the support jack can be moved separately.
    Type: Grant
    Filed: December 8, 2023
    Date of Patent: September 3, 2024
    Assignee: CHANG'AN UNIVERSITY
    Inventors: Hengxing Lan, Mervyn Lan, Zhao Chen, Shijie Liu, Weifeng Sun, Ning Zhang, Bei Zhang
  • Publication number: 20240280613
    Abstract: An inductor current estimation method for a DC-DC switching power supply using a voltage sampling module, a data conversion module, a switching signal counting module, an inductor voltage calculation module and a digital filter module, comprising: processing an input voltage and an output voltage by the voltage sampling module and the data conversion module to obtain a converted input voltage and a converted output voltage which have a same number of bits; comparing a node voltage with a reference voltage, and then obtaining a duty cycle by the switching signal counting module; and then, outputting an average voltage of two terminals of an inductor and a parasitic resistor by the inductor voltage calculation module, and finally, obtaining an estimated inductor current by the digital filter module.
    Type: Application
    Filed: August 3, 2022
    Publication date: August 22, 2024
    Applicant: SOUTHEAST UNIVERSITY
    Inventors: Shen XU, Chenxi YANG, Yijie QIAN, Yujie LIU, Limin YU, Weifeng SUN, Longxing SHI
  • Patent number: 12062985
    Abstract: A control method for a four-switch buck-boost converter is provided. The control method adopts four-stage control, and divides the load range into two sections and adopts different control strategies according to a critical load value corresponding to optimal control. In Boost mode, before the critical load, T1 and T2 are kept constant, T3 is a minimum value for realizing soft-switching, and T4 decreases with the increase of the load; when the critical load is reached, T4 drops to 0; and after the critical load, T1, T2, T3 and T increase with the load. In Buck mode, before the critical load, T2 and T3 are kept constant, T1 is a minimum value for realizing soft-switching, and T4 decreases with the increase of the load; when the critical load is reached, T4 drops to 0; and after the critical load, T1, T2, T3 and T increase with the load.
    Type: Grant
    Filed: September 26, 2022
    Date of Patent: August 13, 2024
    Assignee: SOUTHEAST UNIVERSITY
    Inventors: Qi Liu, Weiwei Zhai, Leilei Shi, Qinsong Qian, Weifeng Sun, Longxing Shi
  • Publication number: 20240266959
    Abstract: A control method for a four-switch buck-boost converter is provided. The control method adopts four-stage control, and divides the load range into two sections and adopts different control strategies according to a critical load value corresponding to optimal control. In Boost mode, before the critical load, T1 and T2 are kept constant, T3 is a minimum value for realizing soft-switching, and T4 decreases with the increase of the load; when the critical load is reached, T4 drops to 0; and after the critical load, T1, T2, T3 and T increase with the load. In Buck mode, before the critical load, T2 and T3 are kept constant, T1 is a minimum value for realizing soft-switching, and T4 decreases with the increase of the load; when the critical load is reached, T4 drops to 0; and after the critical load, T1, T2, T3 and T increase with the load.
    Type: Application
    Filed: September 26, 2022
    Publication date: August 8, 2024
    Applicant: SOUTHEAST UNIVERSITY
    Inventors: Qi LIU, Weiwei ZHAI, Leilei SHI, Qinsong QIAN, Weifeng SUN, Longxing SHI
  • Publication number: 20240263371
    Abstract: The present application discloses a preparation method of SM non-woven fabrics for roof anti-slip, which belongs to the technical field of roofing materials, comprising preparing spunbond non-woven fabric raw materials, preparing spunbond non-woven fabrics, preparing meltblown non-woven fabric raw materials, preparing primary SM non-woven fabrics, and post-processing; the spunbond non-woven fabric raw materials are prepared by uniformly mixing polypropylene with a low melt flow index, polypropylene with a high melt flow index, sodium alginate, antioxidant 1010, zinc stearate, ultraviolet absorber UV-531, polyvinyl alcohol, reinforcing agent, adhesive agent, and nano titanium dioxide. The present application can avoid the problem that the SM non-woven fabrics cannot be fully bonded together and are easy to delaminate when being combined, can also solve the problem of fabric breakage during high-speed production, and can also improve the wear resistance, strength, and stiffness of SM non-woven fabrics.
    Type: Application
    Filed: April 17, 2023
    Publication date: August 8, 2024
    Inventors: Wensheng HUANG, Yujia LIU, Guodong XIE, Weidong ZHANG, Jinjing QIU, Weifeng SUN, Zhiguo HUANG
  • Publication number: 20240266430
    Abstract: An enhancement-mode N-channel and P-channel GaN device integration structure comprises a substrate, wherein an Al—N nucleating layer, an AlGaN buffer layer, a GaN channel layer and an AlGaN barrier layer are sequentially arranged on the substrate, and the AlGaN barrier layer and the GaN channel layer are divided by an isolation layer; a P-channel device is arranged on one side of the isolation layer and comprises a first P-GaN layer, a first GaN isolation layer and a first P+-GaN layer are sequentially arranged on the first P-GaN layer, a first source, a first gate and a first drain are arranged on the first P+-GaN layer, the first gate is inlaid in the first P+-GaN layer, and a gate dielectric layer is arranged between the first gate and the first P+-GaN layer; and an N-channel device is arranged on the other side of the isolation layer.
    Type: Application
    Filed: December 29, 2022
    Publication date: August 8, 2024
    Applicant: SOUTHEAST UNIVERSITY
    Inventors: Long ZHANG, Weifeng SUN, Siyang LIU, Jie MA, Peigang LIU, Longxing SHI
  • Publication number: 20240266943
    Abstract: A multi-phase high-precision current sharing control method applied to constant on-time control is provided, wherein a current difference between continuously sampled current of each line and mean current is processed by a PI compensation module and a low-pass filter module to obtain on-time regulation data. A high bit of the regulation data controls the value of counter reference Vref in an on-time control module, and a low bit controls the length of an enabled delay line in a delay line module. The counter timing control of the on-time control module is combined with the delay line timing control of the delay line module to improve the control precision of a DPWM. The method takes COT control of a Buck converter as a typical application. Compared with a multi-phase COT controller without a current-sharing mechanism, the method can improve the stability and reliability of the system.
    Type: Application
    Filed: April 21, 2024
    Publication date: August 8, 2024
    Applicant: SOUTHEAST UNIVERSITY
    Inventors: Shen XU, Haiqing ZHANG, Yujie LIU, Ruizhi WANG, Yuan GAO, Yongjia LI, Weifeng SUN, Longxing SHI
  • Publication number: 20240255675
    Abstract: An in-situ shear test device for holes in rock-soil mass include an axial loading system, a cutting power system, a rotation system, an upper cutterhead control system, a shear test system, and a lower cutterhead control system, which belongs to the field of geotechnical engineering and geological engineering technology. The device can accurately obtain the in-situ shear strength parameters in the hole of rock and soil, improve the engineering design level, and ensure the safety and stability of the project. The device adopts an in-situ shear test device in the hole of rock and soil mass with the above structure, which can solve the problems of difficulty in in-situ shear test for the holes in deep rock-soil mass, lack of test device, difficulty in radial test, difficulty in loading while shearing, and difficulty in multi-point in-situ test.
    Type: Application
    Filed: December 12, 2023
    Publication date: August 1, 2024
    Applicants: Chang'an University, Institute of Geographic Sciences and Natural Resources Research, CAS
    Inventors: Hengxing LAN, Mervyn LAN, Weifeng SUN, Qinyuan LIANG, Langping LI, Yuming WU, Changgen YAN
  • Patent number: 12051742
    Abstract: An enhancement-mode N-channel and P-channel GaN device integration structure comprises a substrate, wherein an Al—N nucleating layer, an AlGaN buffer layer, a GaN channel layer and an AlGaN barrier layer are sequentially arranged on the substrate, and the AlGaN barrier layer and the GaN channel layer are divided by an isolation layer; a P-channel device is arranged on one side of the isolation layer and comprises a first P-GaN layer, a first GaN isolation layer and a first P+-GaN layer are sequentially arranged on the first P-GaN layer, a first source, a first gate and a first drain are arranged on the first P+-GaN layer, the first gate is inlaid in the first P+-GaN layer, and a gate dielectric layer is arranged between the first gate and the first P+-GaN layer; and an N-channel device is arranged on the other side of the isolation layer.
    Type: Grant
    Filed: December 29, 2022
    Date of Patent: July 30, 2024
    Assignee: SOUTHEAST UNIVERSITY
    Inventors: Long Zhang, Weifeng Sun, Siyang Liu, Jie Ma, Peigang Liu, Longxing Shi
  • Patent number: 12046594
    Abstract: In the monolithically integrated GaN-based half-bridge circuit, a nucleation layer, a buffer layer, a channel layer and a barrier layer are sequentially provided on a conductive substrate, the barrier layer and the channel layer are separated by isolation layers, and a diode, an integrated capacitor, a low-side transistor, a high-side transistor, a first integrated resistor and a second integrated resistor are provided. The half-bridge circuit includes: a low-side transistor and a high-side transistor, wherein a drain of the low-side transistor is connected to a source of the high-side transistor and also connected to an output terminal Vout, and a substrate of the low-side transistor is connected to a substrate of the high-side transistor, wherein a series resistor is connected in parallel to a drain of the high-side transistor and a source of the low-side transistor.
    Type: Grant
    Filed: April 18, 2024
    Date of Patent: July 23, 2024
    Assignee: SOUTHEAST UNIVERSITY
    Inventors: Long Zhang, Weifeng Sun, Siyang Liu, Chengwu Pan, Guiqiang Zheng, Longxing Shi
  • Patent number: 12043259
    Abstract: A method for parking control is provided in the present application, which includes the following steps: determining whether a single-pedal mode is activated; determining whether conditions for deceleration control are met when the single-pedal mode is activated; controlling the new-energy vehicle to decelerate when the conditions for deceleration control are met; determining whether conditions for sending a brake request to a motor controller are met during a process of controlling the new-energy vehicle to decelerate; sending the brake request to the motor controller when the conditions for sending a brake request to the motor controller are met; and sending a parking request to an electronic handbrake when the new-energy vehicle is in the brake mode and the speed of the new-energy vehicle is smaller than the third preset value for a third preset time, enable the new-energy vehicle to enter in a parking mode.
    Type: Grant
    Filed: January 7, 2021
    Date of Patent: July 23, 2024
    Assignee: GREAT WALL MOTOR COMPANY LIMITED
    Inventors: Shuai Zhang, Shujiang Chen, Wentao Hou, Xinran Dong, Ce Sun, Jiaxin Sun, Weifeng Deng
  • Patent number: 12046990
    Abstract: A multi-phase high-precision current sharing control method applied to constant on-time control is provided, wherein a current difference between continuously sampled current of each line and mean current is processed by a PI compensation module and a low-pass filter module to obtain on-time regulation data. A high bit of the regulation data controls the value of counter reference Vref in an on-time control module, and a low bit controls the length of an enabled delay line in a delay line module. The counter timing control of the on-time control module is combined with the delay line timing control of the delay line module to improve the control precision of a DPWM. The method takes COT control of a Buck converter as a typical application. Compared with a multi-phase COT controller without a current-sharing mechanism, the method can improve the stability and reliability of the system.
    Type: Grant
    Filed: April 21, 2024
    Date of Patent: July 23, 2024
    Assignee: SOUTHEAST UNIVERSITY
    Inventors: Shen Xu, Haiqing Zhang, Yujie Liu, Ruizhi Wang, Yuan Gao, Yongjia Li, Weifeng Sun, Longxing Shi
  • Publication number: 20240222473
    Abstract: The present disclosure provides a DMOS device with a junction field plate and its manufacturing method. A drain region is located on a surface of a semiconductor substrate. A source region is located in the semiconductor substrate at a bottom of a first trench. A gate electrode is located at the bottom of the first trench. The junction field plate improves an effect on reducing surface resistance. At the same time, a depth of trenches in the DMOS device may be reduced, and thereby a depth-to-width ratio of the device is reduced, improving the feasibility of increasing a voltage resistance level. Both the source region and the drain region in the DMOS device are led out on a same surface. A second doped polycrystalline silicon layer includes a first doped sublayer and a second doped sublayer with different conduction types.
    Type: Application
    Filed: December 20, 2022
    Publication date: July 4, 2024
    Applicants: CSMC TECHNOLOGIES FAB2 CO., LTD., SOUTHEAST UNIVERSITY
    Inventors: Feng LIN, Chaoqi XU, Shuxian CHEN, Chunxu LI, Li LU, Siyang LIU, Weifeng SUN
  • Patent number: 12027516
    Abstract: A GaN power semiconductor device integrated with a self-feedback gate control structure comprises a substrate, a buffer layer, a channel layer and a barrier layer. A gate control area is formed by a first metal source electrode, a first P-type GaN cap layer, a first metal gate electrode, a first metal drain electrode, a second P-type GaN cap layer and a second metal gate electrode. An active working area is formed by the first metal source electrode, a third P-type GaN cap layer, a third metal gate electrode, a second metal drain electrode, the second P-type GaN cap layer and a second metal source electrode. The overall gate leaking current of the device is regulated by the gate control area, the integration level is high, the parasitic effect is small, and the charge-storage effect can be effectively relieved, thus improving the threshold stability of the device.
    Type: Grant
    Filed: December 29, 2022
    Date of Patent: July 2, 2024
    Assignee: SOUTHEAST UNIVERSITY
    Inventors: Siyang Liu, Sheng Li, Chi Zhang, Weifeng Sun, Mengli Liu, Yanfeng Ma, Longxing Shi
  • Patent number: 11984813
    Abstract: A synchronous rectification control system and method for a quasi-resonant flyback converter are provided. The control system includes a switching transistor voltage sampling circuit configured to sample an output terminal voltage of the switching transistor to obtain a sampled voltage of the switching transistor; a sampling calculation module configured to obtain a dead-time based on the sampled voltage of the switching transistor and a preset relationship, the preset relationship being a correspondence between the duration of the sampled voltage of the switching transistor being below a first preset value and the dead-time during an on-time of a switching cycle of the switching transistor, the dead-time being a time from when the switching transistor is turned off to when the synchronous rectification transistor is turned on; and a control module configured to receive the dead-time and control switching of the synchronous rectification transistor based on the dead-time.
    Type: Grant
    Filed: May 15, 2020
    Date of Patent: May 14, 2024
    Assignees: SOUTHEAST UNIVERSITY, CSMC TECHNOLOGIES FAB2 CO., LTD.
    Inventors: Shen Xu, Siyu Zhao, Congming Qi, Sen Zhang, Xiaoyu Shi, Weifeng Sun, Longxing Shi
  • Publication number: 20240105083
    Abstract: A high-speed remote landslide simulation test device with a variable angle includes a support adjustment component, slide plates, and loose leaves. The device first transmits the operation paths of adjusting the slide plate at different angles to the controller, and the personnel operates the control panel to control the support jack, the motor, and the electromagnet to start and stop through the controller, the output shaft of the motor drives the stainless steel threaded rod to rotate, the controller first energizes one electromagnet and disconnects the other three electromagnets, which can only make the stainless steel threaded rod rotate in a fixed position inside the inner threaded pipe, and the three inner threaded pipes follow the rotation direction of the stainless steel threaded rod, thus, the position of the support jack can be moved separately.
    Type: Application
    Filed: December 8, 2023
    Publication date: March 28, 2024
    Applicant: Chang'an University
    Inventors: Hengxing LAN, Mervyn LAN, Zhao CHEN, Shijie LIU, Weifeng SUN, Ning ZHANG, Bei ZHANG
  • Patent number: 11894458
    Abstract: A lateral double-diffused metal oxide semiconductor field effect transistor (LDMOS), including: a trench gate including a lower part inside a trench and an upper part outside the trench, a length of the lower part in a width direction of a conducting channel being less than that of the upper part, and the lower part extending into a body region and having a depth less than that of the body region; an insulation structure arranged between a drain region and the trench gate and extending downwards into a drift region, a depth of the insulation structure being less than that of the drift region.
    Type: Grant
    Filed: September 25, 2020
    Date of Patent: February 6, 2024
    Assignees: SOUTHEAST UNIVERSITY, CSMC TECHNOLOGIES FAB2 CO., LTD.
    Inventors: Jiaxing Wei, Qichao Wang, Kui Xiao, Dejin Wang, Li Lu, Ling Yang, Ran Ye, Siyang Liu, Weifeng Sun, Longxing Shi
  • Patent number: 11777416
    Abstract: A flyback converter and an output voltage acquisition method therefor and apparatus thereof, wherein the output voltage acquisition method comprises the following steps: acquiring the reference output voltage of a flyback converter; sampling the current output voltage of the flyback converter within a reset time of each switching period among M continuous switching periods of the flyback converter, wherein M is a positive integer; and according to the reference output voltage and the current output voltage, sampling a dichotomy to successively approximate the current output voltage until the M switching periods are finished, and acquiring the output voltage of the flyback converter.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: October 3, 2023
    Assignees: SOUTHEAST UNIVERSITY, CSMC TECHNOLOGIES FAB2 CO., LTD.
    Inventors: Weifeng Sun, Huaxin Zhang, Hu Zhang, Menglin Yu, Siyu Zhao, Shen Xu, Longxing Shi