Patents by Inventor Wen-Chia Liao
Wen-Chia Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9130137Abstract: A light emitting element including an epitaxy layer, at least one first electrode, at least one second electrode, a first bonding pad and a second bonding pad. The epitaxy layer includes in sequence a first semiconductor layer, an active layer and a second semiconductor layer, and the first semiconductor layer has an exposed portion exposed from the second semiconductor layer and the active layer. The first electrode is disposed at the exposed portion. The second electrode is disposed at the second semiconductor layer. The first bonding pad is connected with the first electrode. The second bonding pad is connected with the second electrode. Two light emitting elements with different structures and the light emitting module utilizing the light emitting elements mentioned above are also disclosed.Type: GrantFiled: May 24, 2013Date of Patent: September 8, 2015Assignee: DELTA ELECTRONCS, INC.Inventors: Li-Fan Lin, Shih-Peng Chen, Wen-Chia Liao, Ching-Chuan Shiue
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Publication number: 20150243657Abstract: A semiconductor device includes an active layer, a source electrode, a drain electrode, a gate electrode, an interlayer dielectric, an inter-source layer, an inter-source plug, an inter-drain layer, an inter-drain plug, an inter-gate layer, and an inter-gate plug. The active layer is made of III-V group semiconductors. The source electrode, the drain electrode, and the gate electrode are disposed on the active layer. The gate electrode is disposed between the source electrode and the drain electrode. The interlayer dielectric covers the source electrode, the drain electrode, and the gate electrode. The inter-source layer, the inter-drain layer, and the inter-gate layer are disposed on the interlayer dielectric. The inter-source plug is electrically connected to the source electrode and the inter-source layer. The inter-drain plug is electrically connected to the drain electrode and the inter-drain layer. The inter-gate plug is electrically connected to the gate electrode and the inter-gate layer.Type: ApplicationFiled: September 25, 2014Publication date: August 27, 2015Inventors: Li-Fan LIN, Chun-Chieh YANG, Wen-Chia LIAO, Ching-Chuan SHIUE, Shih-Peng CHEN
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Publication number: 20150187932Abstract: A power semiconductor device and a method for fabricating the same are provided. The power semiconductor device includes a substrate and an active layer on the substrate. A gate electrode is disposed on the active layer. A first electrode and a second electrode are disposed on the active layer, on opposite sides of the gate electrode. A first metal pattern is coupled to the first electrode. A second metal pattern is coupled to the second electrode. A first insulating layer is disposed on the first and second metal patterns. A third metal pattern covers the first insulating layer, coupled to the second metal pattern. An interface between the third metal pattern and the first insulating layer is a substantially planar surface.Type: ApplicationFiled: December 31, 2013Publication date: July 2, 2015Applicant: DELTA ELECTRONICS, INC.Inventors: Li-Fan LIN, Wen-Chia LIAO
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Publication number: 20150069404Abstract: A semiconductor device includes an active layer, at least one source electrode, at least one drain electrode, at least one gate electrode, a first insulating layer, a first source pad, a first drain pad, at least one source plug, and at least one drain plug. The source electrode and the drain electrode are both disposed on the active layer. Projections of the source electrode and the drain electrode on the active layer form a source region and a drain region, respectively. The first source pad and the first drain pad are both disposed on the first insulating layer. A projection of the first source pad on the active layer forms a source pad region. An area of an overlapping region between the source pad region and the drain region is smaller than or equal to 40% of an area of the drain region.Type: ApplicationFiled: February 20, 2014Publication date: March 12, 2015Applicant: DELTA ELECTRONICS, INC.Inventors: Li-Fan LIN, Wen-Chia LIAO
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Patent number: 8957493Abstract: A semiconductor device includes an active layer, at least one source electrode, at least one drain electrode, at least one gate electrode, a first insulating layer, a first source pad, a first drain pad, at least one source plug, and at least one drain plug. The source electrode and the drain electrode are both disposed on the active layer. Projections of the source electrode and the drain electrode on the active layer form a source region and a drain region, respectively. The first source pad and the first drain pad are both disposed on the first insulating layer. A projection of the first source pad on the active layer forms a source pad region. An area of an overlapping region between the source pad region and the drain region is smaller than or equal to 40% of an area of the drain region.Type: GrantFiled: February 20, 2014Date of Patent: February 17, 2015Assignee: Delta Electronics, Inc.Inventors: Li-Fan Lin, Wen-Chia Liao
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Publication number: 20150014714Abstract: A light emitting semiconductor element includes at least two electrically conductive units, at least a light emitting semiconductor die and a light transmitting layer. A groove is located between the two electrically conductive units. The light emitting semiconductor die is cross over the electrically conductive units. The light transmitting layer covers the light emitting semiconductor and partially fills within the groove for linking the electrically conductive units.Type: ApplicationFiled: October 1, 2014Publication date: January 15, 2015Inventors: Li-Fan LIN, Ching-Chuan SHIUE, Wen-Chia LIAO, Shih-Peng CHEN
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Patent number: 8882313Abstract: A light emitting semiconductor element includes at least two electrically conductive units, at least a light emitting semiconductor die and a light transmitting layer. A groove is located between the two electrically conductive units. The light emitting semiconductor die is cross over the electrically conductive units. The light transmitting layer covers the light emitting semiconductor and partially fills within the groove for linking the electrically conductive units.Type: GrantFiled: September 5, 2012Date of Patent: November 11, 2014Assignee: Delta Electronics, Inc.Inventors: Li-Fan Lin, Ching-Chuan Shiue, Wen-Chia Liao, Shih-Peng Chen
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Publication number: 20140217416Abstract: A nitride-based semiconductor device is disclosed, including a substrate, an active region including a plurality of nitride-based semiconductor layers disposed on the substrate, wherein a 2DEG channel and a two-dimensional hole gas (2DHG) under the two-dimensional electron gas (2DEG) channel are formed within the plurality of nitride-based semiconductor layers, a gate electrode disposed on the top of the active region and an interconnection structure electrically connected with the gate electrode and the 2DHG.Type: ApplicationFiled: February 7, 2014Publication date: August 7, 2014Applicants: National Central University, Delta Electronics, Inc.Inventors: Wen-Chia LIAO, Yue-Ming HSIN
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Publication number: 20140209957Abstract: A light-emitting element includes two electrically conductive layers, a flexible insulating layer, a light-emitting chip and an encapsulating body. A groove is formed between the electrically conductive layers. The flexible insulating layer is disposed within the groove and links the electrically conductive layers. The light-emitting chip is placed on one of the electrically conductive layers or crossing over the flexible insulating layer. The light-emitting chip is electrically connected to the electrically conductive layers and covered by the encapsulating body.Type: ApplicationFiled: January 28, 2014Publication date: July 31, 2014Applicant: Delta Electronics, Inc.Inventors: Li-Fan LIN, Wen-Chia LIAO, Ching-Chuan SHIUE, Shih-Peng CHEN
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Publication number: 20130313587Abstract: A light emitting element including an epitaxy layer, at least one first electrode, at least one second electrode, a first bonding pad and a second bonding pad. The epitaxy layer includes in sequence a first semiconductor layer, an active layer and a second semiconductor layer, and the first semiconductor layer has an exposed portion exposed from the second semiconductor layer and the active layer. The first electrode is disposed at the exposed portion. The second electrode is disposed at the second semiconductor layer. The first bonding pad is connected with the first electrode. The second bonding pad is connected with the second electrode. Two light emitting elements with different structures and the light emitting module utilizing the light emitting elements mentioned above are also disclosed.Type: ApplicationFiled: May 24, 2013Publication date: November 28, 2013Applicant: DELTA ELECTRONICS, INCInventors: Li-Fan LIN, Shih-Peng CHEN, Wen-Chia LIAO, Ching-Chuan SHIUE
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Publication number: 20130314931Abstract: A light emitting semiconductor element includes at least two electrically conductive units, at least a light emitting semiconductor die and a light transmitting layer. A groove is located between the two electrically conductive units. The light emitting semiconductor die is cross over the electrically conductive units. The light transmitting layer covers the light emitting semiconductor and partially fills within the groove for linking the electrically conductive units.Type: ApplicationFiled: September 5, 2012Publication date: November 28, 2013Applicant: DELTA ELECTRONICS, INC.Inventors: Li-Fan LIN, Ching-Chuan SHIUE, Wen-Chia LIAO, Shih-Peng CHEN
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Publication number: 20130314894Abstract: A lighting apparatus includes a circuit board, at least one LED, an optical element, a lampshade and at least one fluorescent material. The LED is disposed on the circuit board. The optical element is disposed above the LED, and has at least one reflective surface so that light emitted from the LED to the optical element partially penetrates through and is partially reflected by the optical element. The lampshade covers the circuit board, the LED and the optical element. The fluorescent material is doped within the lampshade.Type: ApplicationFiled: May 24, 2013Publication date: November 28, 2013Inventors: Wen-Chia LIAO, Li-Fan LIN, Shih-Peng CHEN, Ching-Chuan SHIUE
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Publication number: 20130271029Abstract: An illumination apparatus includes a first light-emitting device, a second light-emitting device, and a third light-emitting device. The light emitted from the third light-emitting device is selectively mixed with the light emitted from the first light-emitting device or the second light-emitting device to form a white light having a chromaticity coordinate point substantially located on a Black Body Locus. A color of the light emitted from the third light-emitting device is determined by linear relationships between chromaticity coordinate points corresponding to wavelengths of the lights emitted form the first light-emitting device and the second light-emitting device and corresponding to a color temperature of the white light. A method for generating a white light is also disclosed herein.Type: ApplicationFiled: July 18, 2012Publication date: October 17, 2013Inventors: Wen-Chia LIAO, Li-Fan LIN, Ching-Chuan SHIUE, Shih-Peng CHEN
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Publication number: 20130250572Abstract: A lighting apparatus includes a circuit board, a plurality of light-emitting diode (LED) units and an optical element. The optical element is transflective. The LED units and the optical element are disposed on the circuit board. The optical element has at least one reflective surface so that lights emitted from the LED units to the optical element partially penetrate through and are partially reflected by the optical element.Type: ApplicationFiled: March 21, 2013Publication date: September 26, 2013Applicant: DELTA ELECTRONICS, INC.Inventors: Hsuan-Hsi CHANG, Chun-Min HUANG, Shih-Peng CHEN, Ching-Chuan SHIUE, Li-Fan LIN, Wen-Chia LIAO
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Publication number: 20130240920Abstract: A multi-directional bulb-type lamp is disclosed. The multi-directional bulb-type lamp includes a carrying body, a flexible substrate, and a plurality of LED dies. The flexible substrate is a substrate extending toward multi-directions and attached to the carrying body along a surface thereof. The LED dies are directly disposed on the flexible substrate and electrically connected thereto. Whereby, structures of the bulb-type lamp will be simplified for easy assembly, and multi-directional lighting will be reached.Type: ApplicationFiled: August 1, 2012Publication date: September 19, 2013Applicant: DELTA ELECTRONICS, INC.Inventors: Li-Fan LIN, Wen-Chia LIAO, Ching-Chuan SHIUE, Shih-Peng CHEN
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Publication number: 20120326173Abstract: A light emitting diode comprises a multi-layer semiconductor, a first electrode and a second electrode. The multi-layer semiconductor has a light emitting active layer substantially perpendicular to the predetermined surface, a first semiconductor layer located on a surface of the light emitting active layer and a second semiconductor layer located on an opposite surface of the light emitting active layer. The first electrode is provided adjacent to and electrically connect to the first semiconductor layer. The second electrode is provided adjacent to and electrically connect to the second semiconductor layer. In addition, a method of fabricating LED element and a light emitting device having the LED elements are provided.Type: ApplicationFiled: February 2, 2012Publication date: December 27, 2012Inventors: Wen-Chia LIAO, Li-Fan Lin, Ching-Chuan Shiue, Shih-Peng Chen
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Publication number: 20120286665Abstract: A lighting device includes a lighting engine and at least a wavelength-converting element. The lighting engine includes a circuit board, a blue light emitting diode and a red light emitting diode. The blue light emitting diode and a red light emitting diode are disposed on the circuit board. The wavelength-converting element covers at least the blue light emitting diode. A wavelength-converted light is generated by converting a part of light emitted by the lighting engine through the wavelength-converting element. White light having a color temperature within a range from 2580K to 3220K on the black-body radiation of the CIE-1931 chromaticity diagram is generated by mixing the wavelength-converted light and non-converted light emitted by the lighting engine.Type: ApplicationFiled: May 9, 2012Publication date: November 15, 2012Applicant: DELTA ELECTRONICS, INC.Inventors: Horng-Jou WANG, Shao-Yu CHEN, Wen-Chia LIAO, Li-Fan LIN
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Publication number: 20110285319Abstract: A light source module is provided. The light source module includes a full wave rectifier, a constant current output integrated circuit (IC) and at least one high operating voltage light emitting diode (HVLED) die coupled between the constant current output IC and a ground. The full wave rectifier generates a rectified signal according to an alternating current (AC) power. The constant current output IC outputs a constant current signal according to the rectified signal. A brightness of the HVLED die is determined by the constant current signal.Type: ApplicationFiled: March 7, 2011Publication date: November 24, 2011Inventors: Yung-Hsiang Chao, Wen-Chia Liao, Ching-Chuan Shiue, Shih-Peng Chen, Horng-Jou Wang, Kun-Yueh Lin, Jia-Long Fang
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Publication number: 20110286210Abstract: A LED light source in a single package for raising the color-rendering index is provided. The LED light source comprises a substrate, at least one covering layer, a primary light source, and a secondary light source. The primary and the secondary light sources are formed on the substrate and coated with the at least one covering layer to provide a first output light and a second output light, respectively. The total output light is a mixed color of the first output light and the second output light.Type: ApplicationFiled: December 1, 2010Publication date: November 24, 2011Applicant: DELTA ELECTRONICS, INC.Inventors: Ching-Chuan SHIUE, Li-Fan LIN, Wen-Chia LIAO, Shih-Peng CHEN, Horng-Jou WANG, Huang-Kun CHEN