Abstract: A method of controlling a polishing operation includes receiving a first measurement of a first amount of metal on a substrate made by a first x-ray monitoring system after a first metal layer is deposited on the substrate and before a second metal layer is deposited on the substrate, transferring the substrate to a carrier head of a chemical mechanical polishing apparatus the substrate after the second metal layer is deposited on the substrate, making a second measurement of a second amount of metal on the substrate with a second x-ray monitoring system in the chemical mechanical polishing apparatus, comparing the first measurement to the second measurement to determine a difference, and adjusting a polishing endpoint or a polishing parameter of the polishing apparatus based on the difference.

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

Abstract: A method of controlling a polishing system includes polishing a substrate at a first polishing station, transporting the substrate to an in-line optical metrology system positioned between the first polishing station and a second polishing station, at the in-line optical metrology system measuring a spectrum reflected from the substrate, and generating a characterizing value from the spectrum, determining that the substrate needs rework based on the characterizing value, returning the substrate to the first polishing station and performing rework of the substrate at the first polishing station; and transporting the substrate to the second polishing station and polishing the substrate at the second polishing station.

Abstract: A method of chemical mechanical polishing a substrate includes polishing a layer on the substrate at a polishing station, monitoring the layer during polishing at the polishing station with an in-situ monitoring system, the in-situ monitoring system monitoring an elongated region and generating a measured signal, computing an angle between a primary axis of the elongated region and a tangent to an edge of the substrate, modifying the measured signal based on the angle to generate a modified signal, and at least one of detecting a polishing endpoint or modifying a polishing parameter based on the modified signal.

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

Abstract: Detecting residue of a filler material over a patterned underlying layer includes causing relative motion between a probe of an optical metrology system and a substrate, obtaining a plurality of measured spectra with the optical metrology system through the probe from a plurality of different measurement spots within an area on the substrate, comparing each of the plurality of measured spectra to a reference spectrum to generate a plurality of similarity values, the reference spectrum being a spectrum reflected from the filler material, combining the similarity values to generate a scalar value, and determining the presence of residue based on the scalar value.

Abstract: A method of controlling the polishing of a substrate includes polishing a substrate on a first platen using a first set of parameters, obtaining first and second sequences of measured spectra from first and second regions of the substrate with an in-situ optical monitoring system, generating first and second sequences of values from the first and second sequences of measured spectra, fitting first and second linear functions to the first and second sequences of values, determining a difference between the first linear function and the second linear function, adjusting at least one parameter of a second set of parameters based on the difference, and polishing the substrate on a second platen using the adjusted parameter.

Abstract: A polishing method includes positioning two substrates in contact with the same polishing pad. Prior to commencement of polishing and while the two substrates are in contact with the polishing pad, two starting values are generated from an in-situ monitoring system. Either a starting polishing time or a pressure applied to one of the substrates can be adjusted so that the two substrates have closer endpoint conditions. During polishing the two substrates are monitored with the in-situ monitoring system to generate a two sequences of values, and a polishing endpoint can be detected or an adjustment for a polishing parameter can be based on the two sequences of values.

Abstract: A chemical mechanical polishing apparatus includes a carrier head including a retaining ring having a plastic portion with a bottom surface to contact a polishing pad, an in-situ monitoring system including a sensor that generates a signal that depends on a thickness of the plastic portion, and a controller configured to receive the signal from the in-situ monitoring system and to adjust at least one polishing parameter in response to the signal to compensate for non-uniformity caused by changes in the thickness of the plastic portion of the retaining ring.

Abstract: Methods of determining thickness and phase of a GST layer on a semiconductor substrate are described using intensity spectra within the infra-red range. In particular, techniques for using certain transmission at certain frequencies are disclosed for faster thickness and phase determination in an in-line or standalone metrology/monitoring system for CMP processes.

Abstract: A method of controlling a polishing operation includes polishing a substrate, during polishing obtaining a sequence over time of measured spectra from the substrate with an in-situ optical monitoring system, for each measured spectrum from the sequence of measured spectra determining a difference between the measured spectrum and an immediate previous spectrum from the sequence, accumulating the difference for each measured spectrum to generate a total difference, comparing the total difference to a threshold, and detecting a polishing endpoint based on the comparison of the total difference to the threshold.

Abstract: A chemical mechanical polishing system includes a polishing pad, a platen to support the polishing pad, and two rotatable carrier heads configured to hold two substrates against the polishing pad at the same time. Each carrier head includes a retaining ring. Two actuators sweep the two carrier heads laterally across the polishing pad between positions closer to and farther from the center axis. A polishing surface of the polishing pad includes a center region with a first grooving pattern and an annular region with a second grooving pattern different than the first grooving pattern. A radius of the center region is equal to or less than a distance from a center axis of the platen to a closest outer edge of the two retaining rings when the carrier heads are in the closer positions.

Abstract: A method of controlling polishing includes storing a sequence of default values, polishing a substrate, monitoring the substrate during polishing with an in-situ monitoring system, generating a sequence of measured values from measurements from the in-situ monitoring system, combining the sequence of measured values with the sequence of default values to generate a sequence of modified values, fitting a function to the sequence of modified values, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the function.

Abstract: Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.

Abstract: Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.

Abstract: A method includes polishing a substrate on a first platen using a first set of parameters, obtaining a plurality of measured spectra from at least two zones, comparing the plurality of measured spectra with a reference spectrum to evaluate the thickness of each of the at least two zones of the substrate, comparing a thickness of a first zone with a thickness of a second zone, determining whether the thickness of the first zone falls within a predetermined range of the thickness of the second zone, and if the thickness does not fall within the predetermined range, at least one of a) adjusting at least one parameter of the first set and polishing a second substrate on the first platen using the adjusted parameters, or b) adjusting at least one parameter of a second set and polishing the substrate on a second platen using the adjusted parameters.

Abstract: A method of controlling polishing includes storing a desired ratio representing a ratio for a clearance time of a first zone of a substrate to a clearance time of a second zone of the substrate. During polishing of a first substrate, an overlying layer is monitored, a sequence of measurements is generated, and the measurements are sorted a first group associated with the first zone of the substrate and a second group associated with the second zone on the substrate. A first time and a second time at which the overlying layer is cleared is determined based on the measurements from the first group and the second group, respectively. At least one adjusted polishing pressure is calculated for the first zone based on a first pressure applied in the first zone during polishing the first substrate, the first time, the second time, and the desired ratio.

Abstract: A slurry for planarization of a photoresist includes abrasive particles, an oxidizer, a surface activation chemical, and a solvent.

Abstract: A slurry for chemical mechanical of a cobalt layer or a conductive layer over a cobalt layer includes abrasive particles, an organic complexing compound for Cu or Co ion complexion, a Co corrosion inhibitor that is 0.01-1.0 wt % of the slurry, an oxidizer, and a solvent. The slurry has a pH of 7-12.

Abstract: A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and halting polishing when the eddy current monitoring system indicates that residue of the metal layer is removed from an underlying layer and a top surface of the underlying layer is exposed.