Abstract: An all-in-one computer includes a main body and a display. The main body includes a first locking structure, a first connector, and a second connector. The display includes a second locking structure detachably engaging with the first locking structure, a third connector connecting to the first connector, and a fourth connector connecting to the second connector. The second locking structure engages with the first locking structure to connect the display to the main body.

Abstract: A semiconductor process is provided. A mask layer is formed on a substrate and has a first opening exposing a portion of the substrate. Using the mask layer as a mask, a dry etching process is performed on the substrate to form a second opening therein. The second opening has a bottom portion and a side wall extending upwards and outwards from the bottom portion, wherein the bottom portion is exposed by the first opening and the side wall is covered by the mask layer. Using the mask layer as a mask, a vertical ion implantation process is performed on the bottom portion. A conversion process is performed, so as to form converting layers on the side wall and the bottom portion of the second opening, wherein a thickness of the converting layer on the side wall is larger than a thickness of the converting layer on the bottom portion.

Abstract: A semiconductor process is provided. A substrate is provided, gates each including a silicon layer, a silicide layer and a cap layer are formed thereon, and doped regions are formed at two sides of each gate. An insulating layer is formed to cover a memory region and a periphery region. First contact holes are formed in the insulating layer in the memory region, and each first contact hole is disposed between the two adjacent gates and exposes the doped region. A contact plug is formed in each first contact hole to electrically connect the doped region. A patterned mask layer is formed on the substrate to cover the memory region and expose a portion of the periphery region. Using the patterned mask layer as a mask, second and third contact holes are formed in the insulating layer in the periphery region, to expose the silicide layer and the doped region.

Abstract: A semiconductor process is provided. A substrate is provided in an etching apparatus, wherein first conductive patterns, a barrier layer and a patterned insulating layer are formed thereon. The first openings are formed between the first conductive patterns, the barrier layer covers surfaces of the first conductive patterns and the first openings, and the patterned insulating layer is formed on the first conductive patterns and has a plurality of second openings. The second openings expose the barrier layer on top corners of the first conductive patterns. Polymer layers are formed on the barrier layer, wherein a thickness of the polymer layer on the top corners of the first conductive pattern is larger than a thickness of the polymer layer on bottom portions of the first openings. An etching process is performed to remove the polymer layer and the barrier layer disposed on the bottom portions of the first openings.

Abstract: A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved.

Abstract: A contact layout structure includes a substrate having at least a first region defined thereon, plural sets of first contact layouts positioned along a predetermined direction in the first region, and a plurality of second contact layouts positioned in the first region. Each set of the first contact layouts further comprises two square contact units and two adjacent rectangle contact units positioned in between the two square contact units. Each of the rectangle contact units comprises two opposite long sides and two opposite short sides, and a length of the long sides is not equal to the a length of the short sides.

Abstract: A control system for controlling a mobile device of an automobile includes a signal transiting device (3), a vehicle monitor (11) and a mobile device (2). The mobile device (2) displays an image (I1) via a screen (21) thereon, and the signal transiting device (3) receives the image (11) of the mobile device (2) and transmits the received image (I1) to display on the vehicle monitor (11) of an automobile (1). When a user proceeds to operate the image (I1) via the vehicle monitor (11) of the automobile (1), the signal transiting device (3) produces a control signal (S1) according to an operating action of the user. Therefore, the signal transiting device (3) transmits the produced control signal (S1) to the mobile device (2), and the mobile device (2) can be controlled to execute functions according to the control signal (S1).

Abstract: A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved.

Abstract: A contact layout structure includes a substrate having at least a first region defined thereon, plural sets of first contact layouts positioned along a predetermined direction in the first region, and a plurality of second contact layouts positioned in the first region. Each set of the first contact layouts further comprises two square contact units and two adjacent rectangle contact units positioned in between the two square contact units. Each of the rectangle contact units comprises two opposite long sides and two opposite short sides, and a length of the long sides is not equal to the a length of the short sides.

Abstract: A contact layout structure includes a substrate having at least a first region defined thereon, plural sets of first contact layouts positioned along a predetermined direction in the first region, and a plurality of second contact layouts positioned in the first region. Each set of the first contact layout has two square contact units and two adjacent rectangle contact units positioned between the two square contact units.

Abstract: A method of forming a shadow layer on a wafer bevel region is provided. First, a substrate having the wafer bevel region and a central region is provided. Thereafter, an upper insulator and a lower insulator are provided. The upper insulator is disposed on an upper surface of the substrate and at least covers the central region. The lower insulator is disposed on a lower surface of the substrate and at least covers the central region. A shadow layer is then formed on the upper surface which is not covered by the upper insulator and on the lower surface which is not covered by the lower insulator. Next, the upper insulator and the lower insulator are removed.

Abstract: A contact layout structure includes a substrate having at least a first region defined thereon, plural sets of first contact layouts positioned along a predetermined direction in the first region, and a plurality of second contact layouts positioned in the first region. Each set of the first contact layout has two square contact units and two adjacent rectangle contact units positioned between the two square contact units.

Abstract: A method of forming a shadow layer on a wafer bevel region is provided. First, a substrate having the wafer bevel region and a central region is provided. Thereafter, an upper insulator and a lower insulator are provided. The upper insulator is disposed on an upper surface of the substrate and at least covers the central region. The lower insulator is disposed on a lower surface of the substrate and at least covers the central region. A shadow layer is then formed on the upper surface which is not covered by the upper insulator and on the lower surface which is not covered by the lower insulator. Next, the upper insulator and the lower insulator are removed.

Abstract: A common lock used in a dual-usage portable computer formed of a base member and a display is disclosed to include an elongated operating frame bar longitudinally slidably mounted inside the display of the portable computer, a left-side frame and a right-side frame respectively fixedly mounted inside the display, a left-side hook coupled between the left end of the elongated operating frame bar and the left-side frame for locking the display to the base member when the computer is set in the form of a notebook computer, and a right-side hook coupled between the right end of the of the elongated operating frame bar and the left-side frame for locking the display to the base member when the computer is set in the form of a tablet PC.

Abstract: An adjustable support structure for a panel computer includes: a cradle having a slide slot at a middle section, at least two fastening slots placed at a bottom surface of the slide slot, and at least two pairs of positioning holes separately corresponding to the fastening slots are placed on two side walls of the slide slot. The back end of the support prop is optionally pushed against one of the fastening slots in the cradle; therefore, the cradle, the back support and the support prop which form a triangularly linked structure. The elastic unit can be pressed to drive the two positioning tabs to leave the positioning holes, so that the support prop can slide along the parallel track until the back support is at a desired leaning angle.

Abstract: The invention is directed to a gate conductive layer, wherein the gate conductive layer straddles over an isolation region and an active region in the isolation region. The gate conductive layer comprises a first portion and a second portion. The first portion is located over the active region and at least extending to a boundary between the isolation region and the active region. The second portion is located over the isolation region, wherein the second portion is connected to the first portion and the line width of the first portion is larger than that of the second portion.

Abstract: A common lock used in a dual-usage portable computer formed of a base member and a display is disclosed to include a left-side hook and a right-side hook respectively pivoted to the base member on the inside, and an elongated operating frame bar axially slidably mounted inside the base member of the portable computer and coupled between the left-side hook and the right-side hook for operation by the user to bias the left-side hook and the right-side hook by means of a lever action and to further force the left-side hook and the right-side hook out of a respective through hole at the base member into engagement with a respective retaining block at the display to lock the display to the base member.

Abstract: A display auto-locking structure includes a base member, an open frame pivoted to the base member and rotatable relative to the base member, a display pivotally mounted within the open frame and rotatable relative to the open frame, and a spring-supported cam rod mounted inside the open frame for locking the display to the open frame after the display has been set in one of two reversed positions within the open frame and for enabling the display to be rotated relative to the open frame after the open frame has been rotated relative to the base frame to a predetermined angle.

Abstract: A swivel display inclining structure used in a dual-use portable computer is disclosed to include a touch panel pivoted to the top surface of the base member of the portable computer, two spring members for supporting the touch panel in an inclined position relative to the base member of the portable computer to support the swivel display of the portable computer in an inclined open position, two latches slidably mounted on the base member of the portable computer for locking the touch panel to the base member of the portable computer in a received position, and an operating bar for pressing by the user to disengage the latches from the touch panel for enabling the touch panel to be forced outwards from the received position to the inclined position by the spring members for supporting the swivel display in the inclined open position.