Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A transmission interface between at least a first module and a second module is proposed. The transmission interface includes at least two physical transmission mediums. Each physical transmission medium is arranged to carry a multiplexed signal in which at least two signals are integrated. The at least two physical transmission mediums include a first physical transmission medium arranged to carry a first multiplexed signal including a first IF signal and a reference clock signal. The first IF signal and the reference clock signal are at different frequencies.

Abstract: A semiconductor package includes a substrate having thereon at least an antenna layer and a ground reflector layer under the antenna layer, a radio frequency (RF) die disposed on or in the substrate, a molding compound disposed on the antenna layer of the substrate, and a frequency-selective surface (FSS) structure disposed on the molding compound. The FSS structure is a two-dimensional periodic array of metal patterns of same shape and size. The FSS structure has highly reflective characteristic.

Abstract: A semiconductor package includes a first substrate, a first layer structure, a second layer structure, a first antenna layer and an electronic component. The first antenna layer is formed on at least one of the first layer structure and the second layer structure, wherein the first antenna layer has an upper surface flush with a layer upper surface of the first layer structure or the second layer structure. The electronic component is disposed on a substrate lower surface of the first substrate and exposed from the first substrate. The first layer structure is formed between the first substrate and the second layer structure.

Abstract: A radar module includes a printed circuit board (PCB) and a semiconductor package mounted on the PCB. The semiconductor package comprises an integrated circuit die and a substrate for electrically connecting the integrated circuit die to the PCB. The substrate comprises an antenna layer integrated into the semiconductor package and electrically connected to the integrated circuit die for at least one of transmitting and receiving radar signals. A discrete pattern-shaping device is mounted on the PCB and is configured to shape a radiation pattern of the radar signals.

Abstract: A semiconductor package assembly is provided. The semiconductor package assembly includes a fan-out package and a memory package stacked on the fan-out package. The fan-out package includes a first redistribution layer (RDL) structure, a first logic die, through via (TV) interconnects, and first conductive structures. The first logic die and the first conductive structures are in contact with the first RDL structure. The TV interconnects are electrically connected to the first RDL structure. The memory package includes a first substrate, a memory die, and second conductive structures. The memory die and the second conductive structures are disposed on the first substrate. The memory die is electrically connected to the first logic die using the TV interconnects and the first RDL structure. The semiconductor package assembly further includes a second substrate electrically connected to the first logic die using the first conductive structures.

Abstract: One embodiment of the present disclosure provides a semiconductor package including a bottom chip package having a first side and a second side opposing the first side, and a top antenna package mounted on the first side of the bottom chip package. The bottom chip package further includes a semiconductor chip. The semiconductor chip may include a RFIC chip. The top antenna package has at least one radiative antenna element.

Abstract: An electronic device includes a main printed circuit board (PCB) assembly comprising a bottom PCB and a semiconductor package mounted on an upper surface of the bottom PCB. The semiconductor package includes a substrate and a semiconductor die mounted on a top surface of the substrate. The semiconductor die and the top surface of the substrate are encapsulated by a molding compound. A top PCB is mounted on the semiconductor package through first connecting elements.

Abstract: A semiconductor package includes a bottom package having a substrate and a semiconductor die mounted on a top surface of the substrate. The semiconductor die has an active surface and a rear surface coupled to the top surface of the substrate. The semiconductor die comprises through silicon vias. A top package is stacked on the bottom package. The top package comprises a memory component. A middle re-distribution layer (RDL) structure is disposed between the top package and the bottom package. The active surface of the semiconductor die is directly connected to the middle RDL structure through connecting elements. The memory component is electrically connected to the substrate via the interconnect structures of the middle RDL structure and the through silicon vias of the semiconductor die.

Abstract: A semiconductor package includes a first package having a first side and a second side opposing the first side. The first package comprises a first electronic component and a second electronic component arranged in a side-by-side manner on the second side. A second package is mounted on the first side of the first package. The second package comprises a radiative antenna element. A connector is disposed on the second side.

Abstract: A semiconductor package includes a bottom chip package having a first side and a second side opposing the first side. The bottom chip package comprises a first semiconductor chip and a second semiconductor chip arranged in a side-by-side manner on the second side. A top antenna package is mounted on the first side of the bottom chip package. The top antenna package comprises a radiative antenna element. A connector is disposed on the second side.

Abstract: A semiconductor package includes a first substrate, a first layer structure, a second layer structure, a first antenna layer and an electronic component. The first antenna layer is formed on at least one of the first layer structure and the second layer structure, wherein the first antenna layer has an upper surface flush with a layer upper surface of the first layer structure or the second layer structure. The electronic component is disposed on a substrate lower surface of the first substrate and exposed from the first substrate. The first layer structure is formed between the first substrate and the second layer structure.

Abstract: A semiconductor package includes a substrate having thereon at least an antenna layer and a ground reflector layer under the antenna layer, a radio frequency (RF) die disposed on or in the substrate, a molding compound disposed on the antenna layer of the substrate, and a frequency-selective surface (FSS) structure disposed on the molding compound. The FSS structure is a two-dimensional periodic array of metal patterns of same shape and size. The FSS structure has highly reflective characteristic.

Abstract: A semiconductor package includes a first substrate, a first layer structure, a second layer structure, a first antenna layer and an electronic component. The first antenna layer is formed on at least one of the first layer structure and the second layer structure, wherein the first antenna layer has an upper surface flush with a layer upper surface of the first layer structure or the second layer structure. The electronic component is disposed on a substrate lower surface of the first substrate and exposed from the first substrate. The first layer structure is formed between the first substrate and the second layer structure.

Abstract: A semiconductor package includes a substrate having thereon at least an antenna layer and a ground reflector layer under the antenna layer, a radio frequency (RF) die disposed on or in the substrate, an encapsulation layer disposed on the antenna layer of the substrate, and a frequency-selective surface (FSS) structure disposed on the encapsulation layer. The FSS structure is a two-dimensional periodic array of metal patterns of same shape and size. The FSS structure has highly reflective characteristic.

Abstract: A radar module includes a printed circuit board (PCB) and a semiconductor package mounted on the PCB. The semiconductor package comprises an integrated circuit die and a substrate for electrically connecting the integrated circuit die to the PCB. The substrate comprises an antenna layer integrated into the semiconductor package and electrically connected to the integrated circuit die for at least one of transmitting and receiving radar signals. A discrete pattern-shaping device is mounted on the PCB and is configured to shape a radiation pattern of the radar signals.

Abstract: A radar module includes a printed circuit board (PCB) and a semiconductor package mounted on the PCB. The semiconductor package comprises an integrated circuit die and a substrate for electrically connecting the integrated circuit die to the PCB. The substrate comprises an antenna layer integrated into the semiconductor package and electrically connected to the integrated circuit die for at least one of transmitting and receiving radar signals. A discrete pattern-shaping device is mounted on the PCB and is configured to shape a radiation pattern of the radar signals.

Abstract: An Antenna-in-Package (AiP) includes an interface layer having at least an antenna layer and an insulating layer disposed under the antenna layer. The antenna layer includes a first antenna region and a second antenna region spaced apart from the first antenna region. An integrated circuit die is disposed on the interface layer. The integrated circuit die is interposed between the first antenna region and the second antenna region. The first antenna region includes a first antenna element, a second antenna element extending along a first direction, and a feeding network electrically connecting the first antenna element and the second antenna element to the integrated circuit die. The feeding network, the first antenna element, and the second antenna element are coplanar. A plurality of solder balls is disposed on a surface of the interface layer.

Abstract: An antenna structure includes a radiative antenna element disposed in a first conductive layer, a reflector ground plane disposed in a second conductive layer under the first conductive layer, a feeding network comprising a transmission line disposed in a third conductive layer under the second conductive layer, and at least one coupling element disposed in proximity to a feeding terminal that electrically couples one end of the transmission line to the radiative antenna element. The coupling element is capacitively coupled with the feeding terminal.

Abstract: One embodiment of the present disclosure provides a semiconductor package including a bottom chip package having a first side and a second side opposing the first side, and a top antenna package mounted on the first side of the bottom chip package. The bottom chip package further includes a semiconductor chip. The semiconductor chip may include a RFIC chip. The top antenna package has at least one radiative antenna element.