Abstract: A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.

Abstract: The present invention discloses a reactive distillation apparatus for multistage counter-current rotating bed and its application, the apparatus comprises a closed shell, in the center of which a revolving shaft linking each shell section is set, the said shaft is provided with two or more rotors in series connection, a feeding inlet, a reflux inlet and an outlet of the gas phase are mounted on the top end face of the shell while a waste liquid outlet and an inlet of the gas phase are set on the bottom end face of the shell, the said shell consists of an upper section of the shell and a lower section of the shell along the axial direction, the said rotor consists of a rotating disc firmly connecting with the revolving shaft and a static disc mounted to the shell, a group of concentric dynamic filler rings but with different diameters are installed at intervals along the radial direction, wherein the wall of the dynamic filler rings is holed, and the ring clearance between the dynamic filler rings is configure

Abstract: A lateral-double diffused MOS device is provided. The device includes: a first well having a first conductive type and a second well having a second conductive type disposed in a substrate and adjacent to each other; a drain and a source regions having the first conductive type disposed in the first and the second wells, respectively; a field oxide layer (FOX) disposed on the first well between the source and the drain regions; a gate conductive layer disposed over the second well between the source and the drain regions extending to the FOX; a gate dielectric layer between the substrate and the gate conductive layer; a doped region having the first conductive type in the first well below a portion of the gate conductive layer and the FOX connecting to the drain region. A channel region is defined in the second well between the doped region and the source region.

Abstract: A method of backside metal process for semiconductor electronic devices, particularly of using an electroless plating for depositing a metal seed layer for the plated backside metal film. The backside of a semiconductor wafer, with electronic devices already fabricated on the front side, is first coated with a thin metal seed layer by electroless plating. Then, the backside metal layer, such as a gold layer or a copper layer, is coated on the metal seed layer. The metal seed layer not only increases the adhesion between the front side metal layer and the backside metal layer through backside via holes, but also prevents metal peeling after subsequent fabrication processes. This is helpful for increasing the reliability of device performances. Suitable materials for the metal seed layer includes Pd, Au, Ni, Ag, Co, Cr, Cu, Pt, or their alloys, such as NiP, NiB, AuSn, Pt—Rh and the likes.

Abstract: A method of processing copper backside metal layer for semiconductor chips is disclosed. The backside of a semiconductor wafer, with electronic devices already fabricated on the front side, is first coated with a thin metal seed layer by either electroless plating or sputtering. Then, the copper backside metal layer is coated on the metal seed layer. The metal seed layer not only increases the adhesion between the front side metal layer and the copper backside metal layer through backside via holes, but also prevents metal peeling from semiconductor's substrate after subsequent fabrication processes, which is helpful for increasing the reliability of device performances. Suitable materials for the metal seed layer includes Pd, Au, Ni, Ag, Co, Cr, Pt, or their alloys, such as NiP, NiB, AuSn, Pt—Rh and the likes. The use of Pd as seed layer is particularly useful for the copper backside metal layer, because the Pd layer also acts as a diffusion barrier to prevent Cu atoms entering the semiconductor wafer.

Abstract: Reagents and methods are provided that permit simultaneous analysis of multiple diverse small molecule analytes present in a complex mixture. Samples are labeled with chemically identical but isotopically distinct forms of the labeling reagent, and analyzed using mass spectrometry. A single reagent simultaneously derivatizes multiple small molecule analytes having different reactive functional groups.

Abstract: An optical imaging lens, from object side to image side, includes a positive first lens element that is a meniscus aspherical lens having a convex surface on the object side, an aperture stop, a negative second lens element that is a meniscus aspherical lens having a convex surface on the image side, a positive third lens element that is an aspherical lens while on the lens center, the convex surface is on the object side; and from the center toward the edge, the refractive power changes from positive power, through an inflection point, to negative power. The optical imaging lens satisfies following conditions: 0.5 < f 1 f < 1.0 ; ? - 0.3 < f 2 f < - 1.0 ; 0.05 < d 3 f < 0.2 ; R 21 - R 22 R 21 + R 22 < 0.

Abstract: A method for processing films attached on two sides of a glass substrate is disclosed, which comprises the steps of: providing a laser machining device capable of performing a patterning process whereas the transmission of a laser beam for the patterning process is below 50%; providing a glass substrate having its two sides being attached by films in respective; and exciting the laser machining device for projecting the laser beam onto the films of the glass substrate for patterning the films with predefined patterns.

Abstract: A method to limit active sessions connecting user access to a computer network is presented. First, a request to initiate a new user session in the computer network is authenticated. The authentication is operatively conducted within a single sign-on provider. A session quota is then determined through a session quota logic of the single sign-on provider with the session quota logic retrieving a stored session quota. Then the number of active sessions is compared with the determined session quota. The determined session quota is enforced though a session quota enforcement logic of the SSO provider.

Abstract: A method of backside metal process for semiconductor electronic devices, particularly of using an electroless plating for depositing a metal seed layer for the plated backside metal film. The backside of a semiconductor wafer, with electronic devices already fabricated on the front side, is first coated with a thin metal seed layer by electroless plating. Then, the backside metal layer, such as a gold layer or a copper layer, is coated on the metal seed layer. The metal seed layer not only increases the adhesion between the front side metal layer and the backside metal layer through backside via holes, but also prevents metal peeling after subsequent fabrication processes. This is helpful for increasing the reliability of device performances. Suitable materials for the metal seed layer includes Pd, Au, Ni, Ag, Co, Cr, Cu, Pt, or their alloys, such as NiP, NiB, AuSn, Pt—Rh and the likes.

Abstract: A method of strengthening glass plate is provided. A plasma treating process is performed on a glass plate so that a surface pore variation of the glass plate after the plasma treating process is reduced relative to the surface pore variation of the glass plate before the plasma treating process, wherein the surface pore variation is a variation degree of surface pores in different unit areas of the glass plate. In the mean time, a melted network crosslinking structure is formed on the surface of the glass plate. Based on the above-mentioned mechanisms, the glass plate is strengthened. The plasma treating process is conducive to strengthen the glass plate whether the plasma treating process is performed before or after the conventional chemical strengthening process.

Abstract: The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region.

Abstract: This invention relates compositions containing compounds of formula (I) below: Each of R1, R2, R3, R4, R5, R6, R7, and R8 is defined in the specification.

Abstract: Combo lines having one odd line and one even line are utilized for generating an interlaced preview from an image sensor. Odd combo lines are read out to generate an odd field. Even combo lines are read out to generate an even field. Interpolation is performed on a plurality of odd field lines generated from the plurality of odd combo lines to generate a plurality of odd interpolated lines. Interpolation is performed on a plurality of even field lines generated from the plurality of even combo lines to generate a plurality of even interpolated lines. The interlace preview is generated from the plurality of odd interpolated lines and the plurality of even interpolated lines.

Abstract: This invention puts forward a process of preparing butyl rubber. High gravity devices are used as polymerization reactor. The mixture of isomonoolefin and conjugated diolefin monomers and the diluent, and the mixture of the initiator and diluent are pumped at a certain ratio into a high-gravity reactor to conduct cationic polymerization in the high-gravity environment. After polymerization, the monomers and the diluent are removed from the product to obtain butyl rubber polymers with number-average molecular weight of 80000˜300000 and molecular weight distribution index of 1.9˜3.6. The high gravity polymerization method of this invention can tremendously intensify micro-mixing, mass transfer and heat transfer in the reaction. Compared to the conventional stirred polymerization method, this invention features small reactor volume, at least 30-fold shorter residence time of substances in the high gravity reactor, low cost, low energy consumption and high production efficiency.

Abstract: This invention relates compositions containing compounds of formula (I) below: Each of R1, R2, R3, R4, R5, R6, R7, and R8 is defined in the specification.

Abstract: Display control methods and systems are provided. The display control system includes a panel including a plurality of pixels, and a processor. The processor provides a video signal having a high level to the pixels, and periodically forces at least one of the pixels to be OFF.

Abstract: A computerized electronic device includes a base, a display pivoted to the base, a sending module fixed to the display for emitting a light beam, a receiving module fixed to the base for receiving the light beam emitted by the sending module passing through a bill to be detected, and a controller for receiving signals from the receiving module and processing the signals to obtain a result therefrom. The computerized electronic device adopts computer-aided devices to complement bill validation. This greatly improves the accuracy and smartness of bill validation.

Abstract: A method of fabricating transparent conductive film including the following steps is provided. First, a reactive chamber having at least a target and at least a heating device is provided. Subsequentially, a plasma is generated in the reactive chamber, wherein the plasma is located above the target. Next, the plasma is heated by the heating device from a standby temperature to a working temperature. Simultaneously, a hard plastic substrate is passed above the plasma at a specific speed, wherein the particles of the target are bombarded by the plasma so as to form transparent conductive film on the hard plastic substrate.

Abstract: This invention relates to compositions containing a compound of formula (I) shown below: Each variable is defined in the specification. Also disclosed are methods of using these compositions to treat acne, psoriasis, and infective skin ulcer.