Abstract: A framework, which conforms to the OAuth standard, involves a generic OAuth authorization server that can be used by multiple resource servers in order to ensure that access to resources stored on those resource servers is limited to access to which the resource owner consents. Each resource server registers, with the OAuth authorization server, metadata for that resource server, indicating scopes that are recognized by the resource server. The OAuth authorization server refers to this metadata when requesting consent from a resource owner on behalf of a client application, so that the consent will be of an appropriate scope. The OAuth authorization server refers to this metadata when constructing an access token to provide to the client application for use in accessing the resources on the resource server. The OAuth authorization server uses this metadata to map issued access tokens to the scopes to which those access tokens grant access.

Abstract: A head mounted system is provided. The head mounted system includes an auxiliary image capturing device, a main image capturing device, a signal processing circuit, a memory, an application processor, and an eyeglass frame. The auxiliary image capturing device detects an abnormal situation. The signal processing circuit outputs a warning signal and makes the main image capturing device start video recording when the abnormal situation occurs. The application processor receives the warning signal and stores video data, after the video recording starting, in the memory. The eyeglass frame carries the auxiliary image capturing device, the main image capturing device, the signal processing circuit, the memory, and the application processor.

Abstract: A method for controlling an exposure duration of a high dynamic range image, including: consecutively generating a first high dynamic range image having a first exposure duration ratio and a second high dynamic range image having a second exposure duration ratio greater than the first exposure duration ratio; performing image quality evaluations on both the first high dynamic range image and the second high dynamic range image to obtain a first image quality and a second image quality, respectively; and determining whether the second image quality is better than the first image quality; if yes, generating a third high dynamic range image having a third exposure duration ratio greater than the second exposure duration ratio; if not, generating the third high dynamic range image having the first exposure duration ratio and setting the first exposure duration ration as the optimal exposure duration ratio.

Abstract: An eye-accommodation-aware head mounted visual assistant system and an imaging method thereof are disclosed. The eye-accommodation-aware head mounted visual assistant system comprises a beam splitter, a projecting light source, an image sensor, a calculating device, a controlling device, and an eyeglass frame. The projecting light source projects assistant information via beam splitter. The image sensor captures an eye image. The calculating device calculates an object distance and a viewing direction according to the eye image. The controlling device according to the object distance controls the projecting light source to adjust an image location of the assistant information, and controls the projecting light source to adjust a projecting light angle and an angle of the beam splitter according to the viewing direction. The eyeglass frame carries the projecting light source, the beam splitter, the image sensor, the calculating device and the controlling device.

Abstract: The present invention discloses a method of filming a high dynamic range video. The method includes: using an image sensor to capture an original frame which is interlaced by a plurality of long exposure areas and a plurality of short exposure areas; forming a long exposure field via a plurality of long exposure areas and forming a short exposure field via a plurality of short exposure areas; forming a reconstructed long exposure field and a reconstructed short exposure field having the same resolution as the original frame via a reconstruction process by a pixel value of each pixel in the long exposure field and the short exposure field; and forming a high dynamic range image based on the pixel value of each pixel of the reconstructed long exposure field and the reconstructed short exposure field via a merging process.

Abstract: A method for fabricating a dual damascene metal gate includes forming a dummy gate onto a substrate, disposing a protective layer on the substrate and the dummy gate, and growing an expanding layer on sides of the dummy gate. The method further includes removing the protective layer, forming a spacer around the dummy gate, and depositing and planarizing a dielectric layer. The method further includes selectively removing the expanding layer, and removing the dummy gate.

Abstract: An electroless plating apparatus and method designed specifically for plating at least one semiconductor wafer are disclosed. The apparatus comprises a container, a wafer holder, an electrolyte supplying unit, and an ultrasonic-vibration unit. The container is provided with at least an inlet and used for containing electrolyte. The wafer holder is provided within the container. The electrolyte supplying unit is used to supply the electrolyte into the container via the inlet. The ultrasonic-vibration unit consisting of at least one frequency ultrasonic transducer is disposed in the container for producing a uniform flow of electrolyte in the container. Thereby, the wafers can be uniformly plated, especially for wafers with fine via-holes or trench structures.

Abstract: A semiconductor device includes a source/drain feature in a substrate. The source/drain feature has an upper portion and a lower portion, the upper portion having a lower concentration of Ge than the lower portion. A Si-containing layer over the source/drain feature includes a metal silicide layer.

Abstract: A method for diagnosing corrosion of an underground storage tank system is provided. The method includes the following steps. A sample from the underground storage tank system is collected, wherein the sample comprises at lease one metal ion. The species and the concentration of the metal ion in the sample are detected by an analysis instrument. A concentration threshold value is determined from a database according to the species of the metal ion. A mapping step is performed, wherein the concentration of the metal ion and the concentration threshold value are compared to diagnose if the underground storage tank system is corroded.

Abstract: A method for analyzing the liquefied petroleum gas comprises the following steps. Provide a sample of the liquefied petroleum gas, and one main component group of the liquefied petroleum gas comprises at least one sub component group. Analyze the sample of the liquefied petroleum gas so as to obtain a first measured THC corresponding to the main component group and a second measured THC corresponding to the sub component group. Obtain a regressed THC according to the second measured THC and a predetermined relationship of THC. Obtain a result of THC according to the first measured THC, the regressed THC, and a predetermined range of THC. The predetermined range of THC corresponds to the main component group. The device for analyzing the liquefied petroleum gas comprises an inlet, a multiposition valve, a first column, a second column, an analyzing apparatus, and a computing unit.

Abstract: In a method of manufacturing a semiconductor device, a source/drain feature is formed over a substrate. A Si-containing layer is formed over the source/drain feature. A metal layer is formed over the Si-containing layer. A metal silicide layer is formed from the metal layer and Si in the Si-containing layer.

Abstract: A semiconductor structure and a manufacturing method for the same are provided. The semiconductor structure includes a well region, a dielectric structure, a first doped layer, a second doped layer and a first doped region. The dielectric structure is on the well region. The dielectric structure has a first dielectric sidewall and a second dielectric sidewall opposite to each other. The dielectric structure includes a first dielectric portion and a second dielectric portion, between the first dielectric sidewall and the second dielectric sidewall. The first doped layer is on the well region between the first dielectric portion and the second dielectric portion. The second doped layer is on the first doped layer. The first doped region is in the well region on the first dielectric sidewall.

Abstract: The invention relates to a transparent conductive film. The transparent conductive film has a plastic film substrate, whose two surfaces are provided in sequence with at least two undercoat layers and a patterned transparent conductive layer, respectively. The invention overcomes the drawback of image deterioration caused by the patterning of the transparent conductive layers and reduces the optical difference between the patterned regions and the non-patterned regions by adjusting the refractive indexes and thicknesses of the various layers.

Abstract: A semiconductor element, a manufacturing method thereof and an operating method thereof are provided. The semiconductor element includes a substrate, a first well, a second well, a third well, a fourth well, a bottom layer, a first heavily doping region, a second heavily doping region, a third heavily doping region and a field plane. The first well, the bottom layer and the second well surround the third well for floating the third well and the substrate. The first, the second and the third heavily doping regions are disposed in the first, the second and the third wells respectively. The field plate is disposed above a junction between the first well and the fourth well.

Abstract: A semiconductor device includes a source region, a drain region, and a drift region between the source and drain regions. A split gate is disposed over a portion of the drift region, and between the source and drain regions. The split gate includes first and second gate electrodes separated by a gate oxide layer. A self-aligned RESURF region is disposed within the drift region between the gate and the drain region. PI gate structures including an upper polysilicon layer are disposed near the drain region, such that the upper polysilicon layer can serve as a hard mask for the formation of the double RESURF structure, thereby allowing for self-alignment of the double RESURF structure.

Abstract: Reagents and methods are provided that permit simultaneous analysis of multiple diverse small molecule analytes present in a complex mixture. Samples are labeled with chemically identical but isotopically distinct forms of the labeling reagent, and analyzed using mass spectrometry. A single reagent simultaneously derivatizes multiple small molecule analytes having different reactive functional groups.

Abstract: Described herein are methods, systems, apparatuses and products for automatically discovering patterns in a text corpus. An aspect provides extracting at least one context string related to at least one annotator from the at least one text corpus; analyzing the at least one context string for at least one sequence, the at least one sequence comprised of at least one subsequence; determining at least one sequence signature for each at least one sequence by applying applicable rules to the at least one sequence; and grouping the at least one sequence signature into at least one group.

Abstract: A semiconductor device comprises a source region, a drain region, and a drift region between the source and drain regions. A split gate is disposed over a portion of the drift region, and between the source and drain regions. The split gate includes first and second gate electrodes separated by a gate oxide layer. A self-aligned RESURF region is disposed within the drift region between the gate and the drain region. PI gate structures including an upper polysilicon layer are disposed near the drain region, such that the upper polysilicon layer can serve as a hard mask for the formation of the double RESURF structure, thereby allowing for self-alignment of the double RESURF structure.

Abstract: A semiconductor element, a manufacturing method thereof and an operating method thereof are provided. The semiconductor element includes a substrate, a first well, a second well, a third well, a fourth well, a bottom layer, a first heavily doping region, a second heavily doping region, a third heavily doping region and a field plane. The first well, the bottom layer and the second well surround the third well for floating the third well and the substrate. The first, the second and the third heavily doping regions are disposed in the first, the second and the third wells respectively. The field plate is disposed above a junction between the first well and the fourth well.

Abstract: A method for treating a surface of a glass substrate according to the invention has the steps of placing the glass substrate into a vacuum treatment chamber, introducing a gas into the vacuum treatment chamber, providing electric power to generate an ion source and using the ion source to treat the surface of the glass substrate. By this way, the invention can achieve an effect of surface cleaning and further render the conductive film to be coated on the glass substrate in the subsequent stage to have a reduced surface resistance, thereby improving the conductivity of the glass substrate. The film coated on the glass substrate in the subsequent stage will have higher crystalline level as well.