Abstract: A semiconductor device includes a source/drain feature in a substrate. The source/drain feature has an upper portion and a lower portion, the upper portion having a lower concentration of Ge than the lower portion. A Si-containing layer over the source/drain feature includes a metal silicide layer.

Abstract: A method for diagnosing corrosion of an underground storage tank system is provided. The method includes the following steps. A sample from the underground storage tank system is collected, wherein the sample comprises at lease one metal ion. The species and the concentration of the metal ion in the sample are detected by an analysis instrument. A concentration threshold value is determined from a database according to the species of the metal ion. A mapping step is performed, wherein the concentration of the metal ion and the concentration threshold value are compared to diagnose if the underground storage tank system is corroded.

Abstract: A method for analyzing the liquefied petroleum gas comprises the following steps. Provide a sample of the liquefied petroleum gas, and one main component group of the liquefied petroleum gas comprises at least one sub component group. Analyze the sample of the liquefied petroleum gas so as to obtain a first measured THC corresponding to the main component group and a second measured THC corresponding to the sub component group. Obtain a regressed THC according to the second measured THC and a predetermined relationship of THC. Obtain a result of THC according to the first measured THC, the regressed THC, and a predetermined range of THC. The predetermined range of THC corresponds to the main component group. The device for analyzing the liquefied petroleum gas comprises an inlet, a multiposition valve, a first column, a second column, an analyzing apparatus, and a computing unit.

Abstract: In a method of manufacturing a semiconductor device, a source/drain feature is formed over a substrate. A Si-containing layer is formed over the source/drain feature. A metal layer is formed over the Si-containing layer. A metal silicide layer is formed from the metal layer and Si in the Si-containing layer.

Abstract: A semiconductor structure and a manufacturing method for the same are provided. The semiconductor structure includes a well region, a dielectric structure, a first doped layer, a second doped layer and a first doped region. The dielectric structure is on the well region. The dielectric structure has a first dielectric sidewall and a second dielectric sidewall opposite to each other. The dielectric structure includes a first dielectric portion and a second dielectric portion, between the first dielectric sidewall and the second dielectric sidewall. The first doped layer is on the well region between the first dielectric portion and the second dielectric portion. The second doped layer is on the first doped layer. The first doped region is in the well region on the first dielectric sidewall.

Abstract: The invention relates to a transparent conductive film. The transparent conductive film has a plastic film substrate, whose two surfaces are provided in sequence with at least two undercoat layers and a patterned transparent conductive layer, respectively. The invention overcomes the drawback of image deterioration caused by the patterning of the transparent conductive layers and reduces the optical difference between the patterned regions and the non-patterned regions by adjusting the refractive indexes and thicknesses of the various layers.

Abstract: A semiconductor element, a manufacturing method thereof and an operating method thereof are provided. The semiconductor element includes a substrate, a first well, a second well, a third well, a fourth well, a bottom layer, a first heavily doping region, a second heavily doping region, a third heavily doping region and a field plane. The first well, the bottom layer and the second well surround the third well for floating the third well and the substrate. The first, the second and the third heavily doping regions are disposed in the first, the second and the third wells respectively. The field plate is disposed above a junction between the first well and the fourth well.

Abstract: A semiconductor device includes a source region, a drain region, and a drift region between the source and drain regions. A split gate is disposed over a portion of the drift region, and between the source and drain regions. The split gate includes first and second gate electrodes separated by a gate oxide layer. A self-aligned RESURF region is disposed within the drift region between the gate and the drain region. PI gate structures including an upper polysilicon layer are disposed near the drain region, such that the upper polysilicon layer can serve as a hard mask for the formation of the double RESURF structure, thereby allowing for self-alignment of the double RESURF structure.

Abstract: Described herein are methods, systems, apparatuses and products for automatically discovering patterns in a text corpus. An aspect provides extracting at least one context string related to at least one annotator from the at least one text corpus; analyzing the at least one context string for at least one sequence, the at least one sequence comprised of at least one subsequence; determining at least one sequence signature for each at least one sequence by applying applicable rules to the at least one sequence; and grouping the at least one sequence signature into at least one group.

Abstract: Reagents and methods are provided that permit simultaneous analysis of multiple diverse small molecule analytes present in a complex mixture. Samples are labeled with chemically identical but isotopically distinct forms of the labeling reagent, and analyzed using mass spectrometry. A single reagent simultaneously derivatizes multiple small molecule analytes having different reactive functional groups.

Abstract: A semiconductor device comprises a source region, a drain region, and a drift region between the source and drain regions. A split gate is disposed over a portion of the drift region, and between the source and drain regions. The split gate includes first and second gate electrodes separated by a gate oxide layer. A self-aligned RESURF region is disposed within the drift region between the gate and the drain region. PI gate structures including an upper polysilicon layer are disposed near the drain region, such that the upper polysilicon layer can serve as a hard mask for the formation of the double RESURF structure, thereby allowing for self-alignment of the double RESURF structure.

Abstract: A semiconductor element, a manufacturing method thereof and an operating method thereof are provided. The semiconductor element includes a substrate, a first well, a second well, a third well, a fourth well, a bottom layer, a first heavily doping region, a second heavily doping region, a third heavily doping region and a field plane. The first well, the bottom layer and the second well surround the third well for floating the third well and the substrate. The first, the second and the third heavily doping regions are disposed in the first, the second and the third wells respectively. The field plate is disposed above a junction between the first well and the fourth well.

Abstract: A method for treating a surface of a glass substrate according to the invention has the steps of placing the glass substrate into a vacuum treatment chamber, introducing a gas into the vacuum treatment chamber, providing electric power to generate an ion source and using the ion source to treat the surface of the glass substrate. By this way, the invention can achieve an effect of surface cleaning and further render the conductive film to be coated on the glass substrate in the subsequent stage to have a reduced surface resistance, thereby improving the conductivity of the glass substrate. The film coated on the glass substrate in the subsequent stage will have higher crystalline level as well.

Abstract: In a method of manufacturing a semiconductor device, a source/drain feature is formed over a substrate. A Si-containing layer is formed over the source/drain feature. A metal layer is formed over the Si-containing layer. A metal silicide layer is formed from the metal layer and Si in the Si-containing layer.

Abstract: A semiconductor structure includes a substrate, a first well having a first conductive type, a second well having a second conductive type, a body region, a first doped region, a second doped region, a third doped region and a field plate. The first and second wells are formed in the substrate. The body region is formed in the second well. The first and second doped regions are formed in the first well and the body region, respectively. The second and first doped regions have the same polarities, and the dopant concentration of the second doped region is higher than that of the first doped region. The third doped region is formed in the second well and located between the first and second doped regions. The third and first doped regions have reverse polarities. The field plate is formed on the surface region between the first and second doped regions.

Abstract: An improved structure of backside copper metallization for semiconductor devices and a fabrication method thereof, in which the improved structure comprises sequentially from top to bottom an active layer, a substrate, a backside metal seed layer, at least one thermal expansion buffer layer, a backside metal layer, and at least one oxidation resistant layer, in which the backside metal seed layer is formed of Pd, and the thermal expansion coefficient of the thermal expansion buffer layer is in the range between the thermal expansion coefficients of the backside metal seed layer and of the backside metal layer. The semiconductor chip using the structure provided by the present invention can sustain high-temperature operations.

Abstract: A reactive distillation apparatus for multistage counter-current rotating bed includes a closed shell, in the center of which a revolving shaft linking each shell section is set, the shaft is provided with two or more rotors in series connection, a feeding inlet, a reflux inlet and an outlet of the gas phase are mounted on the top end face of the shell while a waste liquid outlet and an inlet of the gas phase are set on the bottom end face of the shell, a group of concentric dynamic filler rings with different diameters are installed at intervals along the radial direction, wherein the wall of the dynamic filler rings is holed, and the ring clearance between the dynamic filler rings is configured with static rings fastened on the static disc; a feeding inlet is arranged on the top cover of the shell corresponding to the spray nozzle of raw material liquid; a rotating liquid distributor is arranged on the inner side of the innermost dynamic filler ring of the said lower rotor.

Abstract: A semiconductor structure that includes crystalline surfaces and amorphous hydrophilic surfaces is provided. The hydrophilic surfaces are treated with silane that includes a hydrophobic functional group, converting the hydrophilic surfaces to hydrophobic surfaces. Chemical vapor deposition or other suitable deposition methods are used to simultaneously deposit a material on both surfaces and due to the surface treatment, the deposited material exhibits superior adherence qualities on both surfaces. In one embodiment, the structure is an opening formed in a semiconductor substrate and bounded by at least one portion of a crystalline silicon surface and at least one portion of an amorphous silicon oxide structure.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, a first source/drain region, a second source/drain region, a first stack structure and a second stack structure. The first source/drain region is formed in the substrate. The second source/drain region is formed in the substrate. The first stack structure is on the substrate between the first source/drain region and the second source/drain region. The first stack structure comprises a first dielectric layer and a first conductive layer on the first dielectric layer. The second stack structure is on the first stack structure. The second stack structure comprises a second dielectric layer and a second conductive layer on the second dielectric layer.

Abstract: A semiconductor device comprises a source region, a drain region, and a drift region between the source and drain regions. A split gate is disposed over a portion of the drift region, and between the source and drain regions. The split gate includes first and second gate electrodes separated by a gate oxide layer. A super-junction structure is disposed within the drift region between the gate and the drain region.