Abstract: A structure of liquid crystal display (LCD) with a wide viewing angle is presented. In this invention, a slit pattern of a pixel electrode is definded by using an etching process. Thereafter, a reflection layer which defines a reflective region and a transmissive region is constructed along the top or bottom of the slit of the pixel electrode, and wherein a slit or bump pattern can be included in the top electrode further. Therefore, by adjusting the relative positions of the slit or bump structures in the electrodes and by using the fringe effect of electric field, the tilt direction of the LC molecules in a LC cell is controlled and the effect of semi-transmitted wide viewing angle of multi-domain division is formed.

Abstract: The present invention is a storage capacitor structure for liquid crystal display panels, by using a portion of the pixel electrode formed by the transparent metal layer that is overlapped and corresponding to the common electrode of the second metal layer, which is used as the storage capacitor for the pixel. The common electrode is also used as the second metal layer of the pixel, which shields unnecessary light of the backlight module to raise the contrast ratio of the whole display panel.

Abstract: A shift register circuit with high stability includes a plurality of stages, each including a supplementary unit for supplementing an output node with low voltage level. The present invention utilizes an output signal of the output node to feed back to a shift register circuit unit and act as a control signal. The control signal controls the shift register circuit unit, and further the output node of the shift register circuit unit is continuously supplemented with low voltage level. Thus, the shift register circuit of the present invention has the function of driving signal shift according to the necessity of active matrix liquid crystal panel. Furthermore, when an amorphous silicon thin film transistor is embodied in the shift register circuit, the present invention restrains the shift phenomena of the threshold voltage of the amorphous silicon thin film transistors and thereby increases the lifetime and stability of the shift register circuit.

Abstract: An integrated circuit with the cell test function for the electrostatic discharge (ESD) protection, wherein each ESD unit protection circuit has a first, second, and third thin film transistors (TFTs) composed and connected to a signal line, a fourth TFT's and a fifth TFT's gate and drain electrodes are also shorted at the common electrode and the source electrode of the third TFT connects to the common electrode. A sixth TFT's drain electrode connects to the source electrode of the fourth TFT and the source electrode of the fifth TFT connects to the gate electrode of the sixth TFT. By the gate and drain electrodes of the sixth TFT connecting to the corresponding test-switch pads respectively, the sixth TFT is used as a TFT switch so as to build the cell test function in the ESD unit protection circuit.

Abstract: A reflective and transflective liquid crystal display, a figure of bump structure is defined at a pixel electrode, and a reflective layer is formed around the peripheral at the top or bottom of the figure of bump structure to define the reflective zone and the transmissive zone of each single pixel. The upper electrode can contain the figure of slit or bump structure. By adjusting the relative positions of the figures of slit or bump structure between electrodes, the pre-tilt angles and tilting directions of liquid crystal molecules can be controlled, and a multi-domain division alignment is formed, and thus a multi-domain division, semi-transmissive, and wide view angle liquid crystal panel can be formed.

Abstract: A TFT ESD protective circuit disposed between a scanning signal line or a data signal line and a Vcom. The protective circuit includes a positive ESD protective unit and a negative ESD protective unit. Each of the positive static protective unit and negative static protective unit is composed of three TFT. In the case that the gate insulating layer of any of the three TFT is broken down by electrostatic voltage, the remaining two TFT can still normally operate and keep truly providing static protective function.

Abstract: A manufacturing method for low temperature polycrystalline silicon cell, including steps of: forming a buffer layer on a substrate; depositing a-Si:H on the buffer layer; baking and dehydrogenating the a-Si:H; melting and crystallizing the a-Si into Poly-Si by means of laser; defining a Poly-Si island via photolithography; depositing a gate oxide; plating a metal layer on the gate oxide; defining the regions of the gate metal and data line metal by means of photolithography; implanting semiconductor impurites with the gate serving as a mask to define the source/drain; forming a passivation; etching the passivation to form contact holes; filling transparent conductive material into the contact holes to accomplish the connection between the source/drain and data line; and forming the pattern of pixel electrode to achieve the low temperature polycrystalline silicon cell.

Abstract: A TFT ESD protective circuit disposed between a scanning signal line or a data signal line and a Vcom. The protective circuit includes a positive ESD protective unit and a negative ESD protective unit. Each of the positive static protective unit and negative static protective unit is composed of three TFT. In the case that the gate insulating layer of any of the three TFT is broken down by electrostatic voltage, the remaining two TFT can still normally operate and keep truly providing static protective function.

Abstract: The main circuit of each stage of the high-reliability shift register circuit is composed of transistors, and the turn-on time for the four transistors are only 1˜2 pulse time within one frame time. Transistors construct an inverter circuit which continuously offers a high-level supply voltage that controls activities of transistors so as to continuously offer a low-level supply voltage to the first node and the output terminal such that avoids the first node and the output terminal being in a floating state. Besides, one of the transistor acts as a charging circuit that extends the lifetime of another transistor. This circuit avoids the affection on the behavior of the shift register circuit that is caused by an a-Si (amorphous silicon) TFT under a sustained stress.

Abstract: A driving circuit of active matrix organic electroluminescence diode is disclosed. Each pixel includes three TFTs and two capacitors. A gate of scan reset TFT is controlled by the scan line of the row where the pixel is located and a drain of scan reset TFT is connected to the data line of the column where the pixel is situated. Detect TFT is controlled by one Threshold-Lock line. One capacitor Cd is used to store data voltage (Vdata) of image signals and the other capacitor Ct is used to store the threshold voltage (Vth) of driving TFT. Therefore, the sum of capacitors Cd and Ct will drive the driving TFT to output the corresponding current to the organic electroluminescence element.

Abstract: The present invention relates to an uniformly active light emitting diode drive circuit. This invention provides a 3T1C circuit structure in the emitting pixel and an additional data capacitors connecting to all the pixels are picked out and located on one side of the display panel. In addition, the connecting lines to the OLED on every pixel are all collected to one end of a transistor Moc on the other side of the display panel. Through the arrangement, it is intended that the aperture ratio of the organic electroluminescent (OLED) device can be largely improved. Moreover, an additional by-pass current transistor in parallel with data capacitor (Cd) in a data generator region outside of the pixel array can by-pass the previous left current in the circuit and thus enhance the contrast ratio of the emitting pixel.

Abstract: An apparatus for improving yields and uniformity of active matrix organic light emitting diode (AMOLED) panels mainly adds a ballast resistor between a drive transistor and an organic light emitting diode (OLED) of each pixel. The ballast resistor can prevent short circuit of the drive transistor or excessive drive current in the pixel, and prevent the voltage source and the common electrode from directly occurring short circuit together when the OLED has occurred short circuit thereby improve yields and uniformity of the panel.

Abstract: An organic electroluminescent device includes an emitting layer comprising AxByCz inserted between the anode and the cathode. The emitting layer with different materials is a continuously mixed single layer in the organic electroluminescent device without heterojunctions. Moreover, a transporting auxiliary comprising LiF alone or a mixture comprising the hole transporting material, the electron transporting material AxBy and a % wt is inserted between the emitting layer and the cathode electrode.

Abstract: The present invention relates to an organic electroluminescent device comprising a gradual organic electroluminescent layer AxByCz inserted between an anode electrode (may include a hole injection layer) and a cathode electrode, wherein A, B, and C are mediums capable of transporting holes, transporting electrons and injecting electrons respectively, and x, y, and z denote the content of medium A, B, and C respectively. The gradual layer with different materials combined is a mixed continuous organic medium without heterojunctions, wherein the sum of x, y, and z is 100%. Moreover, x has a maximum, value adjacent to the anode electrode, and the sum of y and z has a maximum value adjacent to the cathode electrode, while the medium C is an electron injection component comprising either a low work function metal, metal compound, metal alloy, or an organic material with high electron affinity.

Abstract: The present invention relates to an organic electroluminescent device comprising a mixed organic electroluminescent layer Ax′ By′ Cz inserted between the anode side and the cathode side, wherein A, B, and C are components capable of transporting holes, electrons and hole blocking component respectively, and x′ represents the content of A component, y′ represents the content of B component, and z represents the content of C component. The sum of x′, y′, and z is 100%. The component C is a hole blocking component comprising an organic medium with high ionization potential and high electron affinity.

Abstract: A field emission display panel device that incorporates carbon nanotube emitter layers for emitting electrons wherein the carbon nanotube layers has a smaller width than the conductive paste layers it is deposited on is disclosed. The width of the carbon nanotube layer should be less than ¾ of the width of the conductive paste layer, or in a range between about ¼ and ¾ of the width of the conductive paste layer, i.e. such as a silver paste layer. The present invention novel structure prevents the overflow of the carbon nanotubes, after a curing process for the nanotubes is conducted, onto the sidewall of the conductive paste layer, and thus significantly improves the electron density projected toward the flourescent powder coating layer to produce an image with reduced electron scattering. As a result, image clarity, definition and contrast can be improved in the FED device.

Abstract: The present invention relates to an organic electroluminescent device including an emitting layer comprising AxByCz inserted between the anode and the cathode. The emitting layer with different materials is a continuously mixed single layer organic electroluminescent device without heterojunctions. Moreover, a transporting auxiliary layer comprising of LiF alone or a mixture comprising the hole transporting material, the electron transporting material AxBy and a% wt of LiF inserted between the emitting layer and cathode electrode.

Abstract: The present invention relates to an organic electroluminescent device comprising a gradual organic electroluminescent layer AxByCz inserted between the anode electrode (may include hole injection layer) and the cathode electrode, wherein A, B, and C are mediums capable of transporting holes, electron and injecting electron respectively, and x, y, z denotes the content of medium A, B, and C respectively. The gradual layer with different materials combined is a mixed continuous organic medium without heterojunctions, wherein the sum of x, y, and z is 100%. Moreover, x has a maximum value adjacent the anode electrode, and the sum of y and z has a maximum value adjacent the cathode electrode, while the medium C is an electron injection component comprising either a low work function metal, metal compound, metal alloy, or even organic material with high electron affinity.

Abstract: A display that is readable under direct sunlight comprises a half organic light emitting diode structure and a half reflective liquid crystal display structure. It uses a thin film transistor as a switch to solve the problem of crosstalk between the organic light emitting diode mode and the liquid crystal mode as well as the dc residual problem and has the advantages of both display structures. The data signals in organic light emitting diode mode and liquid crystal mode are controlled by different control systems. By properly selecting liquid crystal material and organic light emitting diode material such that the ranges of the data signals are similar, one data driver can be shared between the two modes.

Abstract: The present invention relates to an uniformly active light emitting diode drive circuit. This invention provides a 3T1C circuit structure in the emitting pixel and an additional data capacitors connecting to all the pixels are picked out and located on one side of the display panel. In addition, the connecting lines to the OLED on every pixel are all collected to one end of a transistor Moc on the other side of the display panel. Through the arrangement, it is intended that the aperture ratio of the organic electroluminescent (OLED) device can be largely improved. Moreover, an additional by-pass current transistor in parallel with data capacitor (Cd) in a data generator region outside of the pixel array can by-pass the previous left current in the circuit and thus enhance the contrast ratio of the emitting pixel.