Abstract: An air-floating guide rail device includes a guide rail unit, a slider unit, and a linear motor unit. The guide rail unit includes a guide rail body and two air-floating block sets made of a material different from that of the guide rail body and each including top and side air-floating blocks. The slider unit includes a main sliding seat and two lateral sliding seats connected integrally to the main sliding seat and each having first and second guiding surfaces transverse to each other and disposed respectively adjacent to corresponding top and side air-floating blocks, and first and second air guiding passages connecting the first and second guiding surfaces to the external environment. The linear motor unit includes a stator and a mover mounted fixedly to the main sliding seat and movable relative to the stator for driving linear movement of the slider unit relative to the guide rail unit.

Abstract: The present disclosure relates to an electronic load apparatus. An embodiment of the present disclosure includes an electronic load apparatus including: a measurement resistor, a reference circuit, a transistor, and a feedback circuit. The measurement resistor includes a first contact, a second contact, a third contact, and a fourth contact. The first contact and the second contact are located at a first end of the measurement resistor. The third contact and the fourth contact are located at a second end of the measurement resistor. A reference power (or a reference voltage) electrically connects to the reference circuit. The reference circuit and the first contact of the measurement resistor are electrically connected. The transistor includes a drain, a gate, and a source. The reference circuit and the gate of the transistor are electrically connected. One of the source and the drain of the transistor electrically connects to the second contact of the measurement resistor.

Abstract: A method for detecting defects in a GaN high electron mobility transistor is disclosed. The method includes steps of measuring a plurality of electrical characteristics of a GaN high electron mobility transistor, measuring the plurality of electrical characteristics after performing a deterioration test on the GaN high electron mobility transistor, irradiating the GaN high electron mobility transistor in turns with a plurality of light sources with different wavelengths and measuring the plurality of electrical characteristics after each irradiation of the GaN high electron mobility transistor by each of the plurality of light sources, and comparing changes of the plurality of electrical characteristics measured in the above steps to determine the defect location of the GaN high electron mobility transistor.

Abstract: A method for drying a wafer at room temperature includes a cleaning step, a reacting step and a pressure releasing step. The cleaning step includes putting a processing workpiece into a cleaning solvent. The reacting step includes putting the processing workpiece along with the cleaning solvent into a reaction chamber, implanting a supercritical fluid into the reaction chamber, and increasing a pressure of the reaction chamber to dissolve the cleaning solvent in the supercritical fluid. A critical temperature of the supercritical fluid is below room temperature. The pressure releasing step includes releasing the pressure of the reaction chamber and discharging the supercritical fluid together with the cleaning solvent out of the reaction chamber, after completely dissolving the cleaning solvent in the supercritical fluid.

Abstract: The present disclosure relates to an electronic load apparatus. An embodiment of the present disclosure includes an electronic load apparatus including: a measurement resistor, a reference circuit, a transistor, and a feedback circuit. The measurement resistor includes a first contact, a second contact, a third contact, and a fourth contact. The first contact and the second contact are located at a first end of the measurement resistor. The third contact and the fourth contact are located at a second end of the measurement resistor. A reference power (or a reference voltage) electrically connects to the reference circuit. The reference circuit and the first contact of the measurement resistor are electrically connected. The transistor includes a drain, a gate, and a source. The reference circuit and the gate of the transistor are electrically connected. One of the source and the drain of the transistor electrically connects to the second contact of the measurement resistor.

Abstract: A p-GaN high electron mobility transistor is disclosed. The p-GaN high electron mobility transistor includes a substrate, a channel layer located on the substrate, a supply layer laminated on the channel layer, and a doped layer laminated on the supply layer. A doping concentration of the doped layer is gradually distributed, in which the doping concentration in a first doped region close to the supply layer is lower than a doping concentration in a second doped region distant from the supply layer. A gate electrode is located on the doped layer. A source electrode and a drain electrode are respectively electrically connected to the channel layer and the supply layer.

Abstract: A GaN high electron mobility transistor is disclosed. The GaN high electron mobility transistor includes a substrate, a buffer layer located on the substrate, a barrier layer laminated on the buffer layer, a channel layer laminated on the barrier layer, a supply layer laminated on the channel layer. The barrier layer has either a p-type semiconductor or a wide band gap material. A gate electrode is located on the supply layer. A source electrode and a drain electrode are electrically connected to the channel layer and the supply layer.

Abstract: A structure to increase the breakdown voltage of the high electron mobility transistor is provided to solve the problem of function loss under a high voltage state. The structure includes a substrate, a conducting layer located on the substrate, a gate insulating layer and an electric-field-dispersion layer. The upper portion of the conducting layer is an electron supply layer, and the lower portion of the conducting layer is an electron tunnel layer. The gate insulating layer is laminated on the electron supply layer. The electric-field-dispersion layer is laminated on the gate insulating layer. The dielectric constant of the electric-field-dispersion layer is smaller than that of the gate insulating layer. A gate electrode is located between the electric-field-dispersion layer and the gate insulating layer. A source and a drain electrodes are respectively electrically connected to the electric-field-dispersion layer, the gate insulating layer, the electron supply layer, and the electron tunnel layer.

Abstract: A gas sensor and a method for manufacturing the gas sensor are disclosed. The gas sensor includes a substrate, a heating member disposed on the substrate, a sensing layer covering the heating member, and two electrodes respectively electrically connected to the sensing layer. The sensing layer includes a doping element with an electronegativity greater than 2. The method for manufacturing the gas sensor includes a deposition process stacking a heating member, a sensing layer, and two electrodes on a substrate by deposition, and a doping process introducing a doping gas when depositing the sensing layer.

Abstract: A resistive random access memory and an initialization method thereof are disclosed. The initialization method includes irradiating a memory device with an electromagnetic wave and manipulating a switching voltage to switch the memory device between a high resistance state and a low resistance state. The electromagnetic wave has a frequency of above 1016 Hertz. The resistive random access memory includes a plurality of memory devices and a switching circuit respectively electrically connected to the plurality of memory devices. Each of the plurality of memory devices has a resistance-changing layer and two electrode layers respectively located on an upper surface and a lower surface of the resistance-changing layer.

Abstract: A structure to increase the breakdown voltage of the high electron mobility transistor is provided to solve the problem of function loss under a high voltage state. The structure includes a substrate, a conducting layer located on the substrate, a gate insulating layer and an electric-field-dispersion layer. The upper portion of the conducting layer is an electron supply layer, and the lower portion of the conducting layer is an electron tunnel layer. The gate insulating layer is laminated on the electron supply layer. The electric-field-dispersion layer is laminated on the gate insulating layer. The dielectric constant of the electric-field-dispersion layer is smaller than that of the gate insulating layer. A gate electrode is located between the electric-field-dispersion layer and the gate insulating layer. A source and a drain electrodes are respectively electrically connected to the electric-field-dispersion layer, the gate insulating layer, the electron supply layer, and the electron tunnel layer.

Abstract: A method of liveness detection for a computing device comprises acquiring at least one full cycle of a remote photoplethysmography, rPPG, signal from a skin image, extracting at least one rPPG waveform characteristic from the full cycle of the rPPG signal, and determining whether the skin image includes a life according to the extracted rPPG waveform characteristic.

Abstract: Disclosures of the present invention describe a non-contact physiological signal measuring device comprising a light sensing unit and a signal processing module, wherein the light sensing unit is adopted for collecting a scattered light from a surface of a sensing portion of a subject. After receiving the scattered light by a signal receiving unit of the signal processing module, a signal processing unit can subsequently obtain physiological characteristic(s) after applying signal process to a physiological signal with respect to the scattered light. Particularly, this novel non-contact physiological signal measuring device does not include any one camera or image capturing unit, such that the subject is able to receive a physiological signal measurement in the case of having well a personal privacy protection as well as preventing the subject's skin from being hurt.

Abstract: A method of liveness detection for a computing device comprises acquiring at least one full cycle of a remote photoplethysmography, rPPG, signal from a skin image, extracting at least one rPPG waveform characteristic from the full cycle of the rPPG signal, and determining whether the skin image includes a life according to the extracted rPPG waveform characteristic.

Abstract: A semiconductor device includes a substrate and a conducting structure. The substrate has a first conductivity type and includes a first isolation region, a first implant region, and a second implant region. The first isolation region is disposed along the circumference of the substrate. The first implant region has the first conductivity type, and the second implant region has a second conductivity type that is the opposite of the first conductivity type. The conducting structure is disposed on the substrate, and at least a portion of the conducting structure is located on the first isolation region.

Abstract: A semiconductor device includes a substrate and a conducting structure. The substrate has a first conductivity type and includes a first isolation region, a first implant region, and a second implant region. The first isolation region is disposed along the circumference of the substrate. The first implant region has the first conductivity type, and the second implant region has a second conductivity type that is the opposite of the first conductivity type. The conducting structure is disposed on the substrate, and at least a portion of the conducting structure is located on the first isolation region.

Abstract: Herein disclosed is a voltage dividing resistor comprising a resistance bar and a plurality of dividing connectors. The resistance bar has a first end and a second end and provides a first current path, which stretches from the first end to the second end along the resistance bar. The distance between the first end and the second end is less than the length of the first current path. The first and second ends are configured to be electrically connected to a power source. The dividing connectors are electrically connected to different locations on the first current path. Each of the dividing connectors has a contact pad. The resistance bar is not coplanar with the contact pads. A divided voltage is obtained from a pair of dividing connectors chosen from the plurality of dividing connectors.

Abstract: An image processing method for image-based physiological measurement, includes converting at least one user's image signal into image data; determining at least one region of interest within the image data; analyzing image information inside the region of interest to generate physiological information of the user; determining a feedback control signal or a control signal to optimize the physiological information of the user; and adjusting an image sensing unit or an image signal processing unit according to the feedback control signal or the control signal.

Abstract: A method for bonding a first component to a second component includes placing the first and second components in a cavity. Each of the first and second components has a bonding portion, and the bonding portion of the first component faces the bonding portion of the second component. A supercritical fluid is then introduced into the cavity with a temperature of 40-400° C. and a pressure of 1,500-100,000 psi, and a pressure of 4-100,000 psi is applied on both the first and second components, assuring the bonding portion of the first component bond to the bonding portion of the second component. Moreover, a method for separating a first component from a second component includes placing a composite in a cavity. The composite includes the first component, the second component and a connecting layer by which the first component joins to the second component. The supercritical is then introduced into the cavity.

Abstract: An identity recognition system includes a target region acquisition module, a photoplethysmography signal conversion module, a biometric characteristic conversion module, a face characteristic acquisition module, and a comparison module. The target region acquisition module is configured to acquire a plurality of target region images from a plurality of face images. The photoplethysmography signal conversion module is configured to generate a photoplethysmography signal according to the target region images. The biometric characteristic conversion module is configured to convert the photoplethysmography signal into a biometric characteristic. The face characteristic acquisition module is configured to acquire a face characteristic from the face images.