Abstract: Changing a lighting mode for a human interface device is described herein. A first lighting mode can be initiated for a human interface device. Keys on the human interface device can be selected over a period of time at a frequency that is within a defined range. A second lighting mode for the human interface device can be identified based in part on the frequency being within the defined range. The first lighting mode and the second lighting mode can define a lighting scheme for light sources in the human interface device that reflect a user mood. The first lighting mode can be switched to the second lighting mode.

Abstract: The invention provides an exposure method of semiconductor patterns, which comprises the following steps: providing a substrate, performing a first exposure step with a first photomask, forming a first pattern in a first region on the substrate, and performing a second exposure step with a second photomask, forming a second pattern in a second region on the substrate, the first pattern and the second pattern are in contact with each other, and at an interface of the first region And the second region, the first pattern and the second pattern are aligned with each other.

Abstract: A conversion control circuit controls plural stackable sub-converters which are coupled in parallel to generate an output power to a load. The conversion control circuit includes a current sharing terminal and a current sharing circuit. A current sharing signal is connected, in parallel, to the current sharing terminals. The current sharing circuit includes: configuration (1): the current sharing signal is generated only according to an inductor current corresponding to one of plural inductors of the plural stackable sub-converters; or configuration (2): the current sharing signal is generated according to plural inductor currents corresponding to plural inductors of plural activated phases of the plural stackable sub-converters, wherein a ratio of a portion of the current sharing signal generated by a master control circuit to a portion generated by one of the slave control circuits is k which relates to a difference between a total phase number and an activated phase number.

Abstract: A transistor structure including a substrate, a gate dielectric layer, a gate, a first doped region, a second doped region, a first drift region, and a dummy gate is provided. The gate dielectric layer is located on the substrate. The gate dielectric layer includes first and second portions. The second portion is connected to the first portion. The thickness of the second portion is greater than the thickness of the first portion. The gate is located on the first and second portions. The first doped region and the second doped region are located in the substrate on two sides of the gate dielectric layer. The first drift region is located in the substrate on one side of the gate. The second doped region is located in the first drift region. The dummy gate is located on the second portion between the gate and the second doped region.

Abstract: An auto framing method is applied to a camera apparatus with an image receiver and a screen. The auto framing method includes receiving a detection image from the image receiver, computing a distance between the image receiver and an identification feature of the detection image, switching a framing mode of the screen into a normal mode or a single mode in accordance with a comparison result of the distance and a predefined distance threshold, setting a preset step count and a preset frame interval to compute a coordinate variation of the identification feature when position difference between a current focus area and a cropping area generated by the framing mode conforms to a predefined difference condition, and utilizing the coordinate variation to acquire an area variation of the cropping area, and scaling the cropping area to a target resolution for displaying on the screen in accordance with the area variation.

Abstract: A semiconductor structure includes a substrate comprising a first well region of a first conductive type, a second well region of a second conductive type, and a junction between the first well region and the second well region, wherein the first conductive type and the second conductive type are complementary. An isolation structure is formed in the substrate to define a plurality of first dummy diffusions and second dummy diffusions and at least a first active region in the first well region, wherein the first dummy diffusions are adjacent to the junction, the first dummy diffusions are between the second dummy diffusions and the first active region, and wherein the second dummy diffusions respectively comprise a metal silicide portion. A plurality of first dummy gates are disposed on the first dummy diffusions and completely cover the first dummy diffusions, respectively.

Abstract: The invention provides a semiconductor structure, which comprises a first silicon substrate with a display region and a driving region defined thereon, a circuit layer located on the first silicon substrate, a plurality of light emitting elements located on the display region of the first silicon substrate, a driving chip located on the driving region of the first silicon substrate and electrically connected with the circuit layer, and a second silicon substrate located on the driving chip.

Abstract: A brightness compensation device includes a panel, a heat detector, a memory, and a processor. he processor is configured to perform the following steps: at a specific grayscale of the red grayscale data, the green grayscale data, or the blue grayscale data, adjusting a turn-on time data of a luminous signal according to the first temperature data; adjusting the red grayscale data, the green grayscale data, or the blue grayscale data according to a brightness relation or the sheet to obtain a red updating grayscale data, a green updating grayscale data, or a blue updating grayscale data; and when it is determined that the second temperature data is the same as the first temperature data, outputting or storing the red updating grayscale data, the green updating grayscale data, or the blue updating grayscale data.

Abstract: Provided is a semiconductor device having a dual gate field-effect transistor and a sensor in electrical communication with the transistor. The field-effect transistor can have a first gate electrode, a second gate electrode, a source electrode, a drain electrode, a semiconductor layer with parts in contact with the source and drain electrodes, a bi-layer gate insulator, and a second gate insulator. The bi-layer gate insulator can include a first layer and a second layer, the first layer located between the second layer and a first side of the semiconductor layer, the second layer located between the first layer and the first gate electrode. The second gate insulator can be located between the second gate electrode and a second side of the semiconductor layer, and the sensor can be in electrical communication with the second gate electrode.

Abstract: A light guide plate, a backlight module and a display device are provided. The light guide plate includes a main body and an optical layer. The main body has a light-incident surface, a side surface and an optical surface. The light-incident surface and the side surface are respectively connected to the optical surface. The optical layer is correspondingly disposed on the side surface of the main body. In a reflectance characteristic of the optical layer, a total reflectance of the reflectance characteristic is composed of the diffuse reflectance and the parallel reflectance. The percentage value of the parallel reflectance to the total reflectance is less than 45 and larger than 25, including the end point.

Abstract: A method for adjusting ambient contrast ratio and an electronic apparatus are provided. The electronic apparatus includes a transparent display and a transmittance adjustment plate disposed at the back of the transparent display. In the electronic apparatus, an adjustment transmittance used to adjust the transmittance adjustment plate and a luminance percentage used to adjust the transparent display are calculated, a grayscale layer is generated based on the luminance percentage; a voltage generator is used to control the transmittance of the transmittance adjustment plate to the adjustment transmittance, and in a case that the transmittance of the transmittance adjustment plate is the adjustment transmittance, a graphic controller is used to display a frame on the transparent display while display the grayscale layer on top of the frame.

Abstract: A brightness compensation device includes a panel, a heat detector, a memory, and a processor. he processor is configured to perform the following steps: at a specific grayscale of the red grayscale data, the green grayscale data, or the blue grayscale data, adjusting a turn-on time data of a luminous signal according to the first temperature data; adjusting the red grayscale data, the green grayscale data, or the blue grayscale data according to a brightness relation or the sheet to obtain a red updating grayscale data, a green updating grayscale data, or a blue updating grayscale data; and when it is determined that the second temperature data is the same as the first temperature data, outputting or storing the red updating grayscale data, the green updating grayscale data, or the blue updating grayscale data.

Abstract: A semiconductor pattern is provided in the present invention, including a first line extending to one end in a first direction and a second line extending in a second direction perpendicular to the first direction and adjacent to the end of the first line in the first direction, wherein the end of the first line is provided with a rounding feature, the first line has a width in the second direction, and the width is gradually increased to a maximum width toward the end and gradually converged to form the rounding feature.

Abstract: An extended drain metal oxide semiconductor transistor includes a substrate. A gate is disposed on the substrate. A source doped region is disposed in the substrate at one side of the gate. A drain doped region is disposed in the substrate at another side of the gate. A thin gate dielectric layer is disposed under the gate. A thick gate dielectric layer is disposed under the gate. The thick gate dielectric layer extends from the bottom of the gate to contact the drain doped region. A second conductive type first well is disposed in the substrate and surrounds the source doped region and the drain doped region. A deep well is disposed within the substrate and surrounds the second conductive type first well.

Abstract: A positioning method comprises the following. Detecting an image marker and receiving an additional information, wherein a first pose information of a first positioning device relative to a target anchor point is included in the additional information, the first positioning device and the target anchor are outside a first positioning space, and a second positioning device is in the first positioning space. Obtaining a second pose information of the second positioning device relative to the first positioning device according to the image marker. Obtaining a positioning-pose information of the second positioning device in the first positioning space through a positioning means which is different from an image marker detection means. Obtaining the target pose information of the target anchor relative to the first positioning space according to the first pose information, the second pose information and the positioning-pose information.

Abstract: An auto framing method is applied to a camera apparatus with an image receiver and a screen. The auto framing method includes receiving a detection image from the image receiver, computing a distance between the image receiver and an identification feature of the detection image, switching a framing mode of the screen into a normal mode or a single mode in accordance with a comparison result of the distance and a predefined distance threshold, setting a preset step count and a preset frame interval to compute a coordinate variation of the identification feature when position difference between a current focus area and a cropping area generated by the framing mode conforms to a predefined difference condition, and utilizing the coordinate variation to acquire an area variation of the cropping area, and scaling the cropping area to a target resolution for displaying on the screen in accordance with the area variation.

Abstract: A control circuit for controlling a stackable multiphase power converter includes: a synchronization terminal; a synchronization signal connected to the synchronization terminals of a plurality of the control circuits in parallel, wherein the synchronization signal includes a plurality of pulses to be successively counted as a count number; and a reset signal, configured to reset and initiate the count number; wherein the control circuit further comprises a phase-sequence number, wherein the control circuit enables a corresponding power stage circuit to generate a phase of the output power when the count number reaches the phase-sequence number.

Abstract: An electronic device is provided. The electronic device includes a touch module, a motion sensor, a memory, and a control unit. The touch module is configured to generate a touch signal. The motion sensor is configured to detect motion of the electronic device to generate motion data. The memory stores a preset motion condition. The control unit is electrically connected to the touch module, the motion sensor, and the memory, and configured to: receive the motion data; and determine whether the motion data meets the preset motion condition or not, and generate a virtual touch signal when the motion data meets the preset motion condition. A control method applied to the electronic device is further provided.

Abstract: A scalable multi-phase switching converter includes: converter modules, each including: a loop control unit, which generates a basic trigger pulse according to a feedback signal in master operation mode; and a switching control unit, which determines an operation mode and a corresponding phase serial order according to a setting signal received by a setting pin in a setting mode, and generates a multi-phase trigger pulse signal at a trigger pin according to the basic trigger pulse in master operation mode. The switching control unit receives the multi-phase trigger pulse signal at the trigger pin in slave operation mode. The switching control unit generates an ON-trigger pulse according to the multi-phase trigger pulse signal and the corresponding phase serial order. An ON-period determination unit generates a conduction control pulse according to the ON-trigger pulse to control a corresponding inductor. The trigger pins of the converter modules are coupled to each other.

Abstract: A stent having assistant extension portion includes a plurality of ring layers, connecting layer, and assistant extension portion. Each ring layer has a plurality of first crowns connected to each other. The connecting layer has the first crown and a second crown connected to each other. The connecting layer and the ring layers are connected to each other to form a stent body, and the connecting layer is located at one end of the stent body. The assistant extension portion has a fixed end and a free end, the fixed end of the assistant extension portion is connected to the second crown, and the free end of the assistant extension portion has at least one hole.