Abstract: The present disclosure relates to a method for manufacturing a circuit board. The method for manufacturing the circuit board includes forming a patterned first dielectric layer on a substrate; forming an adhesive layer on the patterned first dielectric layer; forming a second dielectric layer on the adhesive layer; and patterning the second dielectric layer and the adhesive layer.

Abstract: Method for fabricating semiconductor device, including semiconductor layer having first device region and second device region. A shallow trench isolation (STI) structure is in the semiconductor layer and located at periphery of the first and second device regions. A first and second insulating layers are on the semiconductor layer and respectively located in the first and second device regions. A first gate structure is located on the first insulating layer. A source region and a drain region are in the semiconductor layer and are located at two sides of the first gate structure. A gate doped region is in a surface region of the semiconductor layer in the second device region to serve as a second gate structure. A channel layer is located on the second insulating layer. A source layer and a drain layer are on the STI structure and are located at two sides of the channel layer.

Abstract: Provided are a terminal control system, method and setting adaptation apparatus. The terminal control system includes: a setting adaptation apparatus and an external input device; the external input device configured to acquire a control signal corresponding to a user operation action and transmit the control signal to the setting adaptation apparatus; the setting adaptation apparatus configured to convert the received control signal into an operation signal recognizable by a mobile terminal, and transmit the operation signal to the mobile terminal so as to enable the mobile terminal to execute corresponding operation according to the operation signal. The disclosure allow the user to conveniently separate mouses and more control functions of a mobile terminal from the terminal, and to perform the functions externally, the user can directly complete the operation using a mouse-like input tool in hand, which is very convenient.

Abstract: A semiconductor structure and a manufacturing method of a semiconductor structure are provided. The semiconductor structure includes a semiconductor substrate, a gate, a first diffusion region and a second diffusion region. The gate is disposed on the semiconductor substrate and extends along a first direction. The first diffusion region is formed in the semiconductor substrate, and the second diffusion region is formed in the first diffusion region. The first diffusion region has a first portion located underneath the gate and a second portion protruded from a lateral side of the gate, the first portion has a first length parallel to the first direction, the second portion has a second length parallel to the first direction, and the first length is larger than the second length.

Abstract: A heat dissipation substrate structure includes a multilayer circuit board including a core board and build-up boards, a heat conduction layer, a cavity structure, bonding pads, and vias. The heat conduction layer is disposed within the core board, or on a surface of the core board, or on a surface of one of the build-up boards. The cavity structure is in the multilayer circuit board with respect to the heat conduction layer and exposes a first surface of the heat conduction layer. The bonding pads are on the surface of the multilayer circuit board at a side of a second surface of the heat conduction layer. The portions of the vias are connected to portions of the bonding pads and the heat conduction layer. Accordingly, heat flow can be distributed via a heat dissipation path from the bonding pads through the vias to the heat conduction layer.

Abstract: A display device includes a backlight module, a liquid crystal layer, a lower polarizer, an upper polarizer, and a retardation layer. The liquid crystal layer is disposed on a lighting side of the backlight module while the lower polarizer is disposed between the liquid crystal layer and the backlight module. The upper polarizer is disposed on a side of the liquid crystal layer opposite to the lower polarizer, and the retardation layer is between the upper and lower polarizers. The retardation layer has a retardation area that may modulates the light passing through the lower polarizer and make the light passes through the upper polarizer.

Abstract: A circuit board includes a substrate, a first dielectric layer, an adhesive layer, a second dielectric layer, and a conductive line. The first dielectric layer is disposed on the substrate. The adhesive layer is bonded to the first dielectric layer and has at least one through hole. The through hole has an inner wall. The second dielectric layer is disposed on the adhesive layer and has a second through hole communicated with the first through hole. The conductive line is located in the second through hole of the second dielectric layer and is in contact with the inner wall of the adhesive layer.

Abstract: A transistor with dual spacers includes a gate, a first dual spacer and a second inner spacer. The gate is disposed on a substrate, wherein the gate includes a gate dielectric layer and a gate electrode, and the gate dielectric layer protrudes from the gate electrode and covers the substrate. The first dual spacer is disposed on the gate dielectric layer beside the gate, wherein the first dual spacer includes a first inner spacer and a first outer spacer. The second inner spacer having an L-shaped profile is disposed on the gate dielectric layer beside the first dual spacer. The present invention also provides a method of forming said transistor with dual spacers.

Abstract: Method for fabricating semiconductor device, including semiconductor layer having first device region and second device region. A shallow trench isolation (STI) structure is in the semiconductor layer and located at periphery of the first and second device regions. A first and second insulating layers are on the semiconductor layer and respectively located in the first and second device regions. A first gate structure is located on the first insulating layer. A source region and a drain region are in the semiconductor layer and are located at two sides of the first gate structure. A gate doped region is in a surface region of the semiconductor layer in the second device region to serve as a second gate structure. A channel layer is located on the second insulating layer. A source layer and a drain layer are on the STI structure and are located at two sides of the channel layer.

Abstract: A transistor with dual spacers includes a gate, a first dual spacer and a second inner spacer. The gate is disposed on a substrate, wherein the gate includes a gate dielectric layer and a gate electrode, and the gate dielectric layer protrudes from the gate electrode and covers the substrate. The first dual spacer is disposed on the gate dielectric layer beside the gate, wherein the first dual spacer includes a first inner spacer and a first outer spacer. The second inner spacer having an L-shaped profile is disposed on the gate dielectric layer beside the first dual spacer. The present invention also provides a method of forming said transistor with dual spacers.

Abstract: A semiconductor device including a substrate and a shallow trench isolation (STI) structure is provided. The substrate has a first voltage area and a second voltage area. A top surface of the substrate in the second voltage area is higher than a top surface of the substrate in the first voltage area, and a trench is defined in the substrate in between the first and second voltage area. The STI structure is located in the substrate within the trench, wherein a first portion of the STI structure is located in the first voltage area, a second portion of the STI structure is located in the second voltage area, and a step height difference exist in between a bottom surface of the first portion of the STI structure in the first voltage area and a bottom surface of the second portion of the STI structure in the second voltage area.

Abstract: A semiconductor device includes semiconductor layer having first device region and second device region. A shallow trench isolation (STI) structure is in the semiconductor layer and located at periphery of the first and second device regions. A first and second insulating layers are on the semiconductor layer and respectively located in the first and second device regions. A first gate structure is located on the first insulating layer. A source region and a drain region are in the semiconductor layer and are located at two sides of the first gate structure. A gate doped region is in a surface region of the semiconductor layer in the second device region to serve as a second gate structure. A channel layer is located on the second insulating layer. A source layer and a drain layer are on the STI structure and are located at two sides of the channel layer.

Abstract: A semiconductor device includes semiconductor layer having first device region and second device region. A shallow trench isolation (STI) structure is in the semiconductor layer and located at periphery of the first and second device regions. A first and second insulating layers are on the semiconductor layer and respectively located in the first and second device regions. A first gate structure is located on the first insulating layer. A source region and a drain region are in the semiconductor layer and are located at two sides of the first gate structure. A gate doped region is in a surface region of the semiconductor layer in the second device region to serve as a second gate structure. A channel layer is located on the second insulating layer. A source layer and a drain layer are on the STI structure and are located at two sides of the channel layer.

Abstract: A manufacturing method of a circuit board structure includes the following steps: providing an inner circuit structure which includes a core layer; performing a build-up process to laminate a first build-up circuit structure on a first patterned circuit layer of the inner circuit structure, wherein the first build-up circuit structure includes an inner dielectric layer, and the inner dielectric layer directly covers an upper surface of the core layer and the first patterned circuit layer; removing a portion of the first build-up circuit structure to form an opening extending from a first surface of the first build-up circuit structure relatively far away from the inner circuit structure to a portion of the inner dielectric layer; performing a sandblasting process on a first inner surface of the inner dielectric layer exposed by the opening to at least remove the portion of the inner dielectric layer exposed by the opening.

Abstract: An electrical connector includes an insulative housing enclosed within a metallic shell wherein the housing forms a mating cavity and the shell includes a first shell and a second shell assembled together. The first shell includes a main body abutting against the housing, and a folded plate abutting against the main body and having a plurality of first spring tangs for engagement with the case in which the connector is position. The folded plate forms a securing tab and the housing includes a retention slot receiving the securing tab therein so as to prevent outward movement of the folded plate in the vertical direction.

Abstract: Provided are an operation processing method and device, wherein the method includes that an element in a current interface is detected, at least one corresponding operation control is generated according to the element, and after it is determined that any one of the at least one operation control is moved onto the element, an operation corresponding to the moved operation control is executed on the element. The technical scheme solves the problem that devices operations tend to become complex, thus improving user operation experience.

Abstract: A transistor with dual spacers includes a gate, a first dual spacer and a second inner spacer. The gate is disposed on a substrate, wherein the gate includes a gate dielectric layer and a gate electrode, and the gate dielectric layer protrudes from the gate electrode and covers the substrate. The first dual spacer is disposed on the gate dielectric layer beside the gate, wherein the first dual spacer includes a first inner spacer and a first outer spacer. The second inner spacer having an L-shaped profile is disposed on the gate dielectric layer beside the first dual spacer. The present invention also provides a method of forming said transistor with dual spacers.

Abstract: A transistor with dual spacers includes a gate, a first dual spacer and a second inner spacer. The gate is disposed on a substrate, wherein the gate includes a gate dielectric layer and a gate electrode, and the gate dielectric layer protrudes from the gate electrode and covers the substrate. The first dual spacer is disposed on the gate dielectric layer beside the gate, wherein the first dual spacer includes a first inner spacer and a first outer spacer. The second inner spacer having an L-shaped profile is disposed on the gate dielectric layer beside the first dual spacer. The present invention also provides a method of forming said transistor with dual spacers.

Abstract: A metal-oxide semiconductor transistor includes a substrate, a gate insulating layer disposed on a surface of the substrate, and a metal gate disposed on the gate insulating layer, wherein at least one of the length or the width of the metal gate is greater than or equal to approximately 320 nanometers, and the metal gate has at least one plug hole. The metal-oxide semiconductor transistor further includes at least one insulating plug disposed in the plug hole and two diffusion regions disposed respectively at two sides of the metal gate in the substrate.

Abstract: A system, method, and apparatus for establishing communications with a secure network using a non-secure mobile device operating in a non-secure network are disclosed herein. The disclosed method involves communicating a mobile device identifier to the secure network. In one or more embodiments, the mobile device identifier is an Internet protocol (IP) address and/or a unique identification (ID) code. The method further involves verifying and/or validating, with a mobile device manager in the secure network, the mobile device identifier. Also, the method involves establishing a secure connection between the mobile device and the secure network. In addition, the method involves receiving, with the mobile device, encrypted secure data from the secure network. Further, the method involves decrypting, with the mobile device, the received encrypted secure data using previously downloaded mobile device security software.