Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. In one example, a device includes a substrate, pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality of overhang structures. The first sub-pixel includes a first anode, OLED material, a first cathode, and a first encapsulation layer having a gap defined by a first portion of the first encapsulation layer disposed over the first cathode, a second portion of the first encapsulation layer disposed over a sidewall of the body structure, and a third portion of the first encapsulation layer under an underside surface of the top extension of the top structure, the first portion of the first encapsulation layer contacting the third portion of the first encapsulation layer.

Abstract: An ethylene-vinyl alcohol copolymer (EVOH) resin particle composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The EVOH resin particle composition includes: a first EVOH resin particle having a surface core void volume (Vvc) of 0.002˜14 ?m3/?m2; and a second EVOH resin particle having a surface core void volume (Vvc) of 0.010˜48 ?m3/?m2. This can improve the thermoformability of EVOH compositions.

Abstract: An optical adhesive film structure having an alignment function is provided. The optical adhesive film structure includes an optical adhesive layer and a release film. The release film is disposed on the optical adhesive layer. A first film surface of the release film facing away from the optical adhesive layer has a plurality of marks. The marks are recessed into the release film relative to the first film surface and do not run through the release film. A stitching display module and a manufacturing method of the stitching display module are also provided.

Abstract: A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.

Abstract: A fast-transient buffer is shown. The fast-transient buffer has a flipped voltage follower coupled between the input terminal and the output terminal of the fast-transient buffer, and a first MOS transistor coupled to the flipped voltage follower as well as the output terminal of the fast-transient buffer. The first MOS transistor regulates the output voltage of the output terminal of the fast-transient buffer, in the opposite direction in comparison with an output voltage regulation direction due to the flipped voltage follower.

Abstract: An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes first, second, and third transistors and a discharge circuit. The first transistor has a first gate, a first drain coupled to the bonding pad, and a first source coupled to a first node. The second transistor has a second gate coupled to a power terminal, a second drain coupled to the first gate, and a second source coupled to a ground. The third transistor has a third gate coupled to the power terminal, a third drain coupled to the first node, and a third source coupled to the ground. The discharge circuit is controlled by a driving voltage at the first node. In response to an electrostatic discharge event occurring on the bonding pad, the discharge circuit provides a discharge path between the bonding pad and the ground according to the driving voltage.

Abstract: An ethylene-vinyl alcohol copolymer (EVOH) resin particle composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The EVOH resin particle composition includes: a first EVOH resin particle having a peak material volume (Vmp) of 0.00001˜6 ?m3/?m2; and a second EVOH resin particle having a peak material volume (Vmp) of 0.00015˜20 ?m3/?m2. This can improve the workability and mechanical properties of the EVOH composition when it is made into a film.

Abstract: An ethylene-vinyl alcohol copolymer (EVOH) resin particle composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The EVOH resin particle composition includes: a first EVOH resin particle having a surface core void volume (Vvc) of 0.002˜14 ?m3/?m2; and a second EVOH resin particle having a surface core void volume (Vvc) of 0.010˜48 ?m3/?m2. This can improve the thermoformability of EVOH compositions.

Abstract: An ethylene-vinyl alcohol copolymer (EVOH) resin particle composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The EVOH resin particle composition includes: a first EVOH resin particle having a surface valley void volume (Vvv) of 0.00003˜2 ?m3/?m2; and a second EVOH resin particle having a surface valley void volume (Vvv) of 0.00005˜10 ?m3/?m2. This can improve thickness uniformity, oxygen transmission rate and stretchability of the film made by the EVOH resin particle compositions.

Abstract: A semiconductor structure including a substrate, a first well, a first doped region, a second doped region, a third doped region, a second well, a fourth doped region, and a fifth doped region is provided. The substrate has a first conductivity type. The first well is disposed in the substrate and has a second conductivity type. The first doped region is disposed in the first well and has the second conductivity type. The second doped region is disposed in the first well and has the first conductivity type. The third doped region is disposed in the first well and has the first conductivity type. The second well is disposed in the first well. The fourth doped region is disposed in the second well and has the first conductivity type. The fifth doped region is disposed in the second well and has the second conductivity type.

Abstract: An ESD protection device includes a substrate, an epitaxial layer, first to third well regions, and first to sixth doped regions. The first to third well regions are disposed in the epitaxial layer. The third well region is disposed between the first and second well regions. The first and second doped regions are disposed on the first well region and coupled to a pad. The third and fourth doped regions are disposed on the second well region and coupled to a ground terminal. The fifth doped region is disposed on the third well region, and the sixth doped region is disposed in the fifth doped region. The third, fifth, and sixth doped regions have the same conductive type. In response to an electrostatic discharge event occurring on the pad, a discharge path is formed between the pad and the ground terminal.

Abstract: An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes first, second, and third transistors and a discharge circuit. The first transistor has a first gate, a first drain coupled to the bonding pad, and a first source coupled to a first node. The second transistor has a second gate coupled to a power terminal, a second drain coupled to the first gate, and a second source coupled to a ground. The third transistor has a third gate coupled to the power terminal, a third drain coupled to the first node, and a third source coupled to the ground. The discharge circuit is controlled by a driving voltage at the first node. In response to an electrostatic discharge event occurring on the bonding pad, the discharge circuit provides a discharge path between the bonding pad and the ground according to the driving voltage.

Abstract: The disclosure provides a casing including a substrate, a transparent fluorescent identifying part, and a transparent antibacterial film. The transparent fluorescent identifying part is disposed on the substrate. The transparent antibacterial film covers the substrate and the transparent fluorescent identifying part. A method of manufacturing the casing is also provided.

Abstract: The disclosure provides a casing including a substrate, a transparent fluorescent identifying part, and a transparent antibacterial film. The transparent fluorescent identifying part is disposed on the substrate. The transparent antibacterial film covers the substrate and the transparent fluorescent identifying part. A method of manufacturing the casing is also provided.

Abstract: A manufacturing method of a casing including the following steps is provided. A magnesium alloy substrate is provided first. Next, a protective film is formed on the magnesium alloy substrate. A grinding treatment, a cutting treatment, or an engraving treatment is then performed to remove portions of the protective film and portions of the magnesium alloy substrate. An electrophoretic coating treatment is performed afterwards to form a light-transmissive coating layer covering the protective film and the magnesium alloy substrate. A casing is also provided.

Abstract: The present invention relates to an ethylene-vinyl alcohol copolymer (EVOH) resin composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The core void volume (Vvc) of the surface of the EVOH resin composition is more than 0.010 ?m3/?m2 and less than 50 ?m3/?m2; or its surface pole height (Sxp) is more than 0.010 ?m and less than 9.0 ?m. The invention can reduce the torque output during processing, reduce the adsorption of fine powder on the surface caused by static electricity generated on the surface of the EVOH, and provide good film thickness uniformity.

Abstract: At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package includes a first substrate with a first surface and a second surface opposite to the first surface, a second substrate adjacent to the first surface of the first substrate, and an encapsulant encapsulating the first substrate and the second substrate. The first substrate defines a space. The second substrate covers the space. The second surface of the first substrate is exposed by the encapsulant. A surface of the encapsulant is coplanar with the second surface of the first substrate or protrudes beyond the second surface of the first substrate.

Abstract: The present invention relates to an ethylene-vinyl alcohol copolymer (EVOH) resin composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The surface roughness of the EVOH resin composition is a kurtosis (Sku) ranging from 0.05 to 100. The EVOH of the invention can reduce the torque output during processing, and can obtain the EVOH film with excellent appearance.

Abstract: The present invention relates to an ethylene-vinyl alcohol copolymer (EVOH) resin composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The surface roughness of the EVOH resin composition is the root mean square gradient (Sdq) between 0.0005 and 13. The EVOH of the invention can reduce the torque output during processing, and make the appearance of the EVOH film highly uniform.

Abstract: The present invention relates to an ethylene-vinyl alcohol copolymer (EVOH) resin composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The surface roughness of the EVOH resin composition is the peak material volume (Vmp) between 0.0008 and 10 ?m3/?m2. The EVOH of the invention can reduce the torque output during processing, and can obtain the EVOH film with excellent appearance.