Abstract: A display panel includes a circuit substrate, a first supporting structure, a glue layer residue and light-emitting diodes. The circuit substrate has electrodes. The first supporting structure is located outside the electrodes on the circuit substrate. The glue layer residue is located on the first supporting structure. The light-emitting diodes are electrically connected to the electrodes.

Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a cap and outer flanges. The cap overlies the semiconductor package. The outer flanges are disposed at edges of the cap, are connected with the cap, and extend towards the circuit substrate. A region of the bottom surface of the cap has a curved profile matching a warpage profile of the semiconductor package and the circuit substrate, and the region having the curved profile extends over the semiconductor package.

Abstract: Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed on and extending laterally past a base structure disposed on the PDL structure. Each second overhang is defined by a top structure disposed on and extending laterally past the body structure. The HIL material is disposed over and in contact with the anode and disposed under the adjacent first overhangs. The additional OLED material is disposed on the HIL material and extends under the first overhang.

Abstract: Embodiments described herein relate to a device comprising a substrate, a pixel-defining layer (PDL) structures disposed over the substrate and defining sub-pixels of the device, and a plurality overhang structures. Each overhang structure is defined by a top structure extending laterally past a body structure. Each body structure is disposed over an upper surface of each PDL structure. Overhang structures define a plurality of sub-pixels including a first sub-pixel and a second sub-pixel. Each sub-pixel includes an anode, an organic light-emitting diode (OLED) material, a cathode, and an encapsulation layer. The OLED materials are disposed over the first anode and extends under the overhang structures. The cathodes are disposed over the OLED materials and under the overhang structures. The encapsulation layers are disposed over the first cathode. The first encapsulation layer has a first thickness and the second encapsulation layer has a second thickness different from the first thickness.

Abstract: An artificial leather and a method for manufacturing the artificial leather are provided. The artificial leather includes a fabric layer, a thermoplastic polyolefin layer, a modified thermoplastic polyolefin layer, and a polyurethane surface layer. The thermoplastic polyolefin layer is disposed on the fabric layer. The modified thermoplastic polyolefin layer is disposed on the thermoplastic polyolefin layer. The polyurethane surface layer is attached to the modified thermoplastic polyolefin layer through an adhesive.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a circuit assembly. The movable assembly is configured to connect an optical element, the movable assembly is movable relative to the fixed assembly, and the optical element has an optical axis. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The circuit assembly includes a plurality of circuits and is affixed to the fixed assembly.

Abstract: An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes first, second, and third transistors and a discharge circuit. The first transistor has a first gate, a first drain coupled to the bonding pad, and a first source coupled to a first node. The second transistor has a second gate coupled to a power terminal, a second drain coupled to the first gate, and a second source coupled to a ground. The third transistor has a third gate coupled to the power terminal, a third drain coupled to the first node, and a third source coupled to the ground. The discharge circuit is controlled by a driving voltage at the first node. In response to an electrostatic discharge event occurring on the bonding pad, the discharge circuit provides a discharge path between the bonding pad and the ground according to the driving voltage.

Abstract: An ethylene-vinyl alcohol copolymer (EVOH) resin particle composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The EVOH resin particle composition includes: a first EVOH resin particle having a peak material volume (Vmp) of 0.00001˜6 ?m3/?m2; and a second EVOH resin particle having a peak material volume (Vmp) of 0.00015˜20 ?m3/?m2. This can improve the workability and mechanical properties of the EVOH composition when it is made into a film.

Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a cap and outer flanges. The cap overlies the semiconductor package. The outer flanges are disposed at edges of the cap, are connected with the cap, and extend towards the circuit substrate. A region of the bottom surface of the cap has a curved profile matching a warpage profile of the semiconductor package and the circuit substrate, and the region having the curved profile extends over the semiconductor package.

Abstract: A method for manufacturing nitride catalyst is provided, which includes putting a Ru target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn. The method also includes providing powers to the Ru target and the M target, respectively. The method also includes providing ions to bombard the Ru target and the M target for depositing MxRuyN2 on a substrate by sputtering, wherein 0<x<1.3, 0.7<y<2, and x+y=2, wherein MxRuyZ2 is cubic crystal system or amorphous.

Abstract: An ethylene-vinyl alcohol copolymer (EVOH) resin particle composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The EVOH resin particle composition includes: a first EVOH resin particle having a surface core void volume (Vvc) of 0.002˜14 ?m3/?m2; and a second EVOH resin particle having a surface core void volume (Vvc) of 0.010˜48 ?m3/?m2. This can improve the thermoformability of EVOH compositions.

Abstract: An ethylene-vinyl alcohol copolymer (EVOH) resin particle composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The EVOH resin particle composition includes: a first EVOH resin particle having a surface valley void volume (Vvv) of 0.00003˜2 ?m3/?m2; and a second EVOH resin particle having a surface valley void volume (Vvv) of 0.00005˜10 ?m3/?m2. This can improve thickness uniformity, oxygen transmission rate and stretchability of the film made by the EVOH resin particle compositions.

Abstract: A semiconductor structure including a substrate, a first well, a first doped region, a second doped region, a third doped region, a second well, a fourth doped region, and a fifth doped region is provided. The substrate has a first conductivity type. The first well is disposed in the substrate and has a second conductivity type. The first doped region is disposed in the first well and has the second conductivity type. The second doped region is disposed in the first well and has the first conductivity type. The third doped region is disposed in the first well and has the first conductivity type. The second well is disposed in the first well. The fourth doped region is disposed in the second well and has the first conductivity type. The fifth doped region is disposed in the second well and has the second conductivity type.

Abstract: A bonding apparatus includes a vacuum holder and a thermal head. The vacuum holder is configured to attach a non-bonding area of a printed circuit board. A side of the vacuum holder has a first lower sidewall, a first upper sidewall, and a first connection surface adjoining the first lower sidewall and the first upper sidewall. The thermal head is adjacent to the vacuum holder and configured to hot press a bonding area of the printed circuit board. A side of the thermal head proximal to the vacuum holder has a second lower sidewall, a second upper sidewall, and a second connection surface adjoining the second lower sidewall and the second upper sidewall. The second connection surface overlaps at least a portion of the first connection surface, and a height of the second lower sidewall is greater than a height of the first lower sidewall.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: The present disclosure is relates to a conductive film and a manufacturing method thereof. The conductive film includes a base layer, a TPU complex layer, a conductive layer and a TPU surface layer. The TPU complex layer includes a TPU heat-resistant layer and a TPU melting layer. The TPU heat-resistant layer is disposed on the TPU melting layer, and the TPU melting layer is disposed on the base layer. The conductive layer includes a conductive circuit disposed on the TPU heat-resistant layer. The TPU surface layer is disposed on the conductive layer. Utilizing the TPU complex layer, the conductive layer does not contact directly with the base layer to avoid breaking the conductive line of the conductive layer when the base layer is pulled. Therefore, the lifetime of the conductive film can be increased.

Abstract: An ESD protection device includes a substrate, an epitaxial layer, first to third well regions, and first to sixth doped regions. The first to third well regions are disposed in the epitaxial layer. The third well region is disposed between the first and second well regions. The first and second doped regions are disposed on the first well region and coupled to a pad. The third and fourth doped regions are disposed on the second well region and coupled to a ground terminal. The fifth doped region is disposed on the third well region, and the sixth doped region is disposed in the fifth doped region. The third, fifth, and sixth doped regions have the same conductive type. In response to an electrostatic discharge event occurring on the pad, a discharge path is formed between the pad and the ground terminal.

Abstract: An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes first, second, and third transistors and a discharge circuit. The first transistor has a first gate, a first drain coupled to the bonding pad, and a first source coupled to a first node. The second transistor has a second gate coupled to a power terminal, a second drain coupled to the first gate, and a second source coupled to a ground. The third transistor has a third gate coupled to the power terminal, a third drain coupled to the first node, and a third source coupled to the ground. The discharge circuit is controlled by a driving voltage at the first node. In response to an electrostatic discharge event occurring on the bonding pad, the discharge circuit provides a discharge path between the bonding pad and the ground according to the driving voltage.

Abstract: The disclosure provides a casing including a substrate, a transparent fluorescent identifying part, and a transparent antibacterial film. The transparent fluorescent identifying part is disposed on the substrate. The transparent antibacterial film covers the substrate and the transparent fluorescent identifying part. A method of manufacturing the casing is also provided.

Abstract: The disclosure provides a casing including a substrate, a transparent fluorescent identifying part, and a transparent antibacterial film. The transparent fluorescent identifying part is disposed on the substrate. The transparent antibacterial film covers the substrate and the transparent fluorescent identifying part. A method of manufacturing the casing is also provided.