Abstract: A display system suitable for a vehicle is provided. The display system suitable for the vehicle includes a center console, a processing device, and a display device. The center console is configured to generate a power sequence according to a customization setting, and the power sequence corresponds to content of a data table. The processing device is configured to receive the power sequence and decodes the power sequence through a lookup table to generate a decoding result. The lookup table includes the content of the data table. The display device is coupled to the processing device and is configured to display a display image according to the decoding result.

Abstract: An integrated circuit (IC) structure includes a semiconductor substrate, a first gate line, a second gate line, and a first auxiliary gate portion. The semiconductor substrate comprises a semiconductor fin. The semiconductor fin extends substantially along a first direction. The first gate line and the second gate line extend substantially along a second direction different form the first direction from a top view. The first auxiliary gate portion connects the first gate line to the second gate line from the top view.

Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.

Abstract: A novel additive for recycling thermoset materials, its related recyclable thermoset composition and its application are disclosed. Specifically, the composition of the additive comprises at least one copolymer that has at least one carbamate group, at least one carbonate group and/or at least one urea group, and a number-average molecular weight of the copolymer is between 100 and 50,000 Da.

Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: A transmission interface between at least a first module and a second module is proposed. The transmission interface includes at least two physical transmission mediums. Each physical transmission medium is arranged to carry a multiplexed signal in which at least two signals are integrated. The at least two physical transmission mediums include a first physical transmission medium arranged to carry a first multiplexed signal including a first IF signal and a reference clock signal. The first IF signal and the reference clock signal are at different frequencies.

Abstract: A package structure and method for forming the same are provided. The package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.

Abstract: A method of forming a FinFET is disclosed. The method includes depositing a conductive material across each of a number of adjacent fins, depositing a sacrificial mask over the conductive material, patterning the conductive material with the sacrificial mask to form a plurality of conductive material segments, depositing a sacrificial layer over the sacrificial mask, and patterning the sacrificial layer, where a portion of the patterned sacrificial layer remains over the sacrificial mask, where a portion of the sacrificial mask is exposed, and where the exposed portion of the sacrificial mask extends across each of the adjacent fins. The method also includes removing the portion of the sacrificial layer over the sacrificial mask, after removing the portion of the sacrificial layer over the sacrificial mask, removing the sacrificial mask, epitaxially growing a plurality of source/drain regions from the semiconductor substrate, and electrically connecting the source/drain regions to other devices.

Abstract: The present disclosure provides a thin film including a first thermoplastic polyolefin (TPO) elastomer which is anhydride-grafted. The present disclosure further provides a method for manufacturing the thin film, a laminated material and a method for adhesion.

Abstract: The disclosure provides a casing including a substrate, a transparent fluorescent identifying part, and a transparent antibacterial film. The transparent fluorescent identifying part is disposed on the substrate. The transparent antibacterial film covers the substrate and the transparent fluorescent identifying part. A method of manufacturing the casing is also provided.

Abstract: The disclosure provides a casing including a substrate, a transparent fluorescent identifying part, and a transparent antibacterial film. The transparent fluorescent identifying part is disposed on the substrate. The transparent antibacterial film covers the substrate and the transparent fluorescent identifying part. A method of manufacturing the casing is also provided.

Abstract: A manufacturing method of a casing including the following steps is provided. A magnesium alloy substrate is provided first. Next, a protective film is formed on the magnesium alloy substrate. A grinding treatment, a cutting treatment, or an engraving treatment is then performed to remove portions of the protective film and portions of the magnesium alloy substrate. An electrophoretic coating treatment is performed afterwards to form a light-transmissive coating layer covering the protective film and the magnesium alloy substrate. A casing is also provided.

Abstract: The present invention relates to an ethylene-vinyl alcohol copolymer (EVOH) resin composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The core void volume (Vvc) of the surface of the EVOH resin composition is more than 0.010 ?m3/?m2 and less than 50 ?m3/?m2; or its surface pole height (Sxp) is more than 0.010 ?m and less than 9.0 ?m. The invention can reduce the torque output during processing, reduce the adsorption of fine powder on the surface caused by static electricity generated on the surface of the EVOH, and provide good film thickness uniformity.

Abstract: At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package includes a first substrate with a first surface and a second surface opposite to the first surface, a second substrate adjacent to the first surface of the first substrate, and an encapsulant encapsulating the first substrate and the second substrate. The first substrate defines a space. The second substrate covers the space. The second surface of the first substrate is exposed by the encapsulant. A surface of the encapsulant is coplanar with the second surface of the first substrate or protrudes beyond the second surface of the first substrate.

Abstract: The present invention relates to an ethylene-vinyl alcohol copolymer (EVOH) resin composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The surface roughness of the EVOH resin composition is a kurtosis (Sku) ranging from 0.05 to 100. The EVOH of the invention can reduce the torque output during processing, and can obtain the EVOH film with excellent appearance.

Abstract: The present invention relates to an ethylene-vinyl alcohol copolymer (EVOH) resin composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The surface roughness of the EVOH resin composition is the root mean square gradient (Sdq) between 0.0005 and 13. The EVOH of the invention can reduce the torque output during processing, and make the appearance of the EVOH film highly uniform.

Abstract: The present invention relates to an ethylene-vinyl alcohol copolymer (EVOH) resin composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The surface roughness of the EVOH resin composition is the peak material volume (Vmp) between 0.0008 and 10 ?m3/?m2. The EVOH of the invention can reduce the torque output during processing, and can obtain the EVOH film with excellent appearance.

Abstract: A control circuit applied in a specific element and including a first transistor and an electrostatic discharge (ESD) protection circuit is provided. The specific element has a III-V semiconductor material and includes a control electrode, a first electrode and a second electrode. The first transistor is coupled between the first electrode and the second electrode and has the III-V semiconductor material. The ESD protection circuit is coupled to the control electrode, the first transistor and the second electrode. In response to an ESD event, the ESD protection circuit provides a discharge path to release the ESD current from the control electrode to the second electrode.

Abstract: At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package includes a first substrate with a first surface and a second surface opposite to the first surface, a second substrate adjacent to the first surface of the first substrate, and an encapsulant encapsulating the first substrate and the second substrate. The first substrate defines a space. The second substrate covers the space. The second surface of the first substrate is exposed by the encapsulant. A surface of the encapsulant is coplanar with the second surface of the first substrate or protrudes beyond the second surface of the first substrate.

Abstract: A semiconductor device including a substrate, a seed layer, a buffer layer, a channel layer, a barrier layer, a gate structure, a first source/drain structure, a second source/drain structure, and a contact is provided. The seed layer is disposed on the substrate. The buffer layer is disposed on the seed layer. The channel layer is disposed on the buffer layer. The barrier layer is disposed on the channel layer. The gate structure is disposed on the barrier layer. The first and second source/drain structures are disposed on opposite sides of the gate structure. The contact contacts the first source/drain structure. The distance between the gate structure and the contact is between 0.5 micrometers and 30 micrometers.