Abstract: At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package includes a first substrate with a first surface and a second surface opposite to the first surface, a second substrate adjacent to the first surface of the first substrate, and an encapsulant encapsulating the first substrate and the second substrate. The first substrate defines a space. The second substrate covers the space. The second surface of the first substrate is exposed by the encapsulant. A surface of the encapsulant is coplanar with the second surface of the first substrate or protrudes beyond the second surface of the first substrate.

Abstract: The present invention relates to an ethylene-vinyl alcohol copolymer (EVOH) resin composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The core height difference (Sk) of the surface of the EVOH resin composition is between 0.6 and 2.0 ?m, and the overall standard deviation of Sk is between 0.05 and 0.55. The invention can reduce the torque output during processing to achieve the effect of energy saving, and can also improve the stability during output to obtain a better film appearance.

Abstract: A semiconductor device including a substrate, a seed layer, a buffer layer, a channel layer, a barrier layer, a gate structure, a first source/drain structure, a second source/drain structure, and a contact is provided. The seed layer is disposed on the substrate. The buffer layer is disposed on the seed layer. The channel layer is disposed on the buffer layer. The barrier layer is disposed on the channel layer. The gate structure is disposed on the barrier layer. The first and second source/drain structures are disposed on opposite sides of the gate structure. The contact contacts the first source/drain structure. The distance between the gate structure and the contact is between 0.5 micrometers and 30 micrometers.

Abstract: The present invention relates to an ethylene-vinyl alcohol copolymer (EVOH) resin composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The core void volume (Vvc) of the surface of the EVOH resin composition is more than 0.010 ?m3/?m2 and less than 50 ?m3/?m2; or its surface pole height (Sxp) is more than 0.010 ?m and less than 9.0 ?m. The invention can reduce the torque output during processing, reduce the adsorption of fine powder on the surface caused by static electricity generated on the surface of the EVOH, and provide good film thickness uniformity.

Abstract: The present invention relates to an ethylene-vinyl alcohol copolymer (EVOH) resin composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The core height difference (Sk) of the surface of the EVOH resin composition is between 0.6 and 2.0 ?m, and the overall standard deviation of Sk is between 0.05 and 0.55. The invention can reduce the torque output during processing to achieve the effect of energy saving, and can also improve the stability during output to obtain a better film appearance.

Abstract: The present invention relates to an ethylene-vinyl alcohol copolymer (EVOH) resin composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The surface roughness of the EVOH resin composition is the root mean square gradient (Sdq) between 0.0005 and 13. The EVOH of the invention can reduce the torque output during processing, and make the appearance of the EVOH film highly uniform.

Abstract: The present invention relates to an ethylene-vinyl alcohol copolymer (EVOH) resin composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The surface roughness of the EVOH resin composition is the peak material volume (Vmp) between 0.0008 and 10 ?m3/?m2. The EVOH of the invention can reduce the torque output during processing, and can obtain the EVOH film with excellent appearance.

Abstract: The present invention relates to an ethylene-vinyl alcohol copolymer (EVOH) resin composition, an EVOH film formed therefrom, and a multilayer structure containing the same. The surface roughness of the EVOH resin composition is a kurtosis (Sku) ranging from 0.05 to 100. The EVOH of the invention can reduce the torque output during processing, and can obtain the EVOH film with excellent appearance.

Abstract: An electrostatic discharge protection device including a substrate, a first PNP element, a second PNP element, and an isolation region is provided. The substrate has a P-type conductivity. The first and second PNP elements are formed in the substrate. The isolation region isolates the first and second PNP elements.

Abstract: The instant disclosure relates to a fluorine-containing ethylene-vinyl alcohol copolymer (EVOH) resin composition as well as mixture and blend thereof. The fluorine-containing EVOH resin composition comprises EVOH and fluorine-containing particles, wherein the fluorine-containing EVOH resin composition has a total fluoride ion content ranging from 45 to 41000 ppm. The invention can reduce the adhesion of EVOH to the inside of the extruder, and effectively reduce the appearance of gel or gelled substance in subsequent finished products.

Abstract: High-voltage semiconductor device and method of forming the same, the high-voltage semiconductor device includes a substrate, a gate structure, a drain, a first insulating structure and a drain doped region. The gate structure is disposed on the substrate. The drain is disposed in the substrate, at one side of the gate structure. The first insulating structure is disposed on the substrate, under the gate structure to partially overlap with the gate structure. The drain doped region is disposed in the substrate, under the drain and the first insulating structure, and the drain doped region includes a discontinuous bottom surface.

Abstract: The present disclosure provides ethylene-vinyl alcohol copolymer resin compositions, and multilayer structure comprising the ethylene-vinyl alcohol copolymer resin compositions with uniform thickness.

Abstract: High-voltage semiconductor device and method of forming the same, the high-voltage semiconductor device includes a substrate, a gate structure, a drain, a first insulating structure and a drain doped region. The gate structure is disposed on the substrate. The drain is disposed in the substrate, at one side of the gate structure. The first insulating structure is disposed on the substrate, under the gate structure to partially overlap with the gate structure. The drain doped region is disposed in the substrate, under the drain and the first insulating structure, and the drain doped region includes a discontinuous bottom surface.

Abstract: A semiconductor device including a substrate, a seed layer, a buffer layer, a channel layer, a barrier layer, a gate structure, a first source/drain structure, a second source/drain structure, and a contact is provided. The seed layer is disposed on the substrate. The buffer layer is disposed on the seed layer. The channel layer is disposed on the buffer layer. The barrier layer is disposed on the channel layer. The gate structure is disposed on the barrier layer. The first and second source/drain structures are disposed on opposite sides of the gate structure. The contact contacts the first source/drain structure. The distance between the gate structure and the contact is between 0.5 micrometers and 30 micrometers.

Abstract: The disclosure provides a casing including a substrate, a transparent fluorescent identifying part, and a transparent antibacterial film. The transparent fluorescent identifying part is disposed on the substrate. The transparent antibacterial film covers the substrate and the transparent fluorescent identifying part. A method of manufacturing the casing is also provided.

Abstract: A casing includes a substrate, a protection layer, a bottom coating layer, a coating film layer, and a surface coating layer. The protection layer is formed on the substrate. The bottom coating layer is formed on the protection layer. The coating film layer is formed on the bottom coating layer. The surface coating layer is formed on the coating film layer. One of a surface of the substrate where the protection layer is formed on, a surface of the protection layer where the bottom coating layer is formed on, and a surface of the bottom coating layer where the coating film layer is formed on has a concave-convex pattern.

Abstract: An electrostatic discharge protection device including a substrate, a first PNP element, a second PNP element, and an isolation region is provided. The substrate has a P-type conductivity. The first and second PNP elements are formed in the substrate. The isolation region isolates the first and second PNP elements.

Abstract: High-voltage semiconductor device and method of forming the same, the high-voltage semiconductor device includes a substrate, a gate structure, a drain, a first insulating structure and a drain doped region. The gate structure is disposed on the substrate. The drain is disposed in the substrate, at one side of the gate structure. The first insulating structure is disposed on the substrate, under the gate structure to partially overlap with the gate structure. The drain doped region is disposed in the substrate, under the drain and the first insulating structure, and the drain doped region includes a discontinuous bottom surface.

Abstract: A dip coating apparatus includes a liquid tank containing paint and a hanging tool for dipping into or removal from the liquid tank. The hanging tool includes a hollow frame, a first and second rack, and two first hanging frames. The hollow frame has a first and second strip. The first and the second racks are disposed in the hollow frame and connected to the first and the second strips. Each of the first hanging frames includes a first top strip connected to the first rack, a first bottom strip connected to the second rack, and a first lateral strip connected to the first top strip and the first bottom strip. Each first lateral strip forms an obtuse angle with the corresponding first top strip and an acute angle with the corresponding first bottom strip. Each first lateral strip includes a first top hook and a first bottom hook.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first well region that has first conductive type therein. The semiconductor device structure also includes a first doped region embedded in the first well region, and having a second conductive type that is different from the first conductive type. The semiconductor device structure further includes a second well region that has the second conductive type. In addition, the semiconductor device structure includes a first metal electrode disposed on the first doped region of the semiconductor substrate and a second metal electrode disposed on the second well region of the semiconductor substrate.