Abstract: A circuit board structure includes a circuit substrate having opposing first and second sides, a redistribution structure disposed at the first side, and a dielectric structure disposed at the second side. The circuit substrate includes a first circuit layer disposed at the first side and a second circuit layer disposed at the second side. The redistribution structure is electrically coupled to the circuit substrate and includes a first leveling dielectric layer covering the first circuit layer, a first thin-film dielectric layer disposed on the first leveling dielectric layer and having a material different from the first leveling dielectric layer, and a first redistributive layer disposed on the first thin-film dielectric layer and penetrating through the first thin-film dielectric layer and the first leveling dielectric layer to be in contact with the first circuit layer. The dielectric structure includes a second leveling dielectric layer disposed below the second circuit layer.

Abstract: A certificate requesting method, a certificate issuing method, a certificate system and a computer-readable medium thereof are provided, in which subscriber identity identification information, a private key and a public key certificate bound to a first security chip are converted into a private key bound to a second security chip via an online identity authentication procedure, and the corresponding public key certificate is issued by a certificate authority server, so as to improve the usability, the convenience and the security thereof.

Abstract: A system for manufacturing an integrated circuit includes a non-transitory computer readable medium configured to store executable instructions, and a processor coupled to the non-transitory computer readable medium. The processor is configured to execute the executable instructions for placing a set of gate layout patterns on a first layout level, and generating a cut feature layout pattern extending in the first direction. The set of gate layout patterns correspond to fabricating a set of gate structures of the integrated circuit. The cut feature layout pattern is on the first layout level, and overlap each of the layout patterns of the set of gate layout patterns at a same position in the second direction. The cut feature layout pattern identifies a location of a removed portion of a gate structure of the set of gate structures.

Abstract: Boundary cells may be provided. A boundary of a first functional cell of a circuit is determined. A first plurality of a first type of dummy cells are placed along a first portion of the determined boundary. The first portion extends in a first direction. Each of the first type of dummy cells comprises first pre-defined dimensions. A second plurality of a second type of dummy cells are placed along a second portion of the determined boundary. The second portion extends in a second direction. Each of the second type of dummy cells comprises second pre-defined dimensions. The second pre-defined dimensions is different than the first pre-defined dimensions.

Abstract: An integrated circuit includes a first and second set of gate structures. A center of each of the first set of gate structures is separated from a center of an adjacent gate of the first set of gate structures in a first direction by a first pitch. A center of each of the second set of gate structures is separated from a center of an adjacent gate of the second set of gate structures in the first direction by the first pitch. The first and second set of gate structures extend in a second direction. A gate of the first set of gate structures is aligned in the second direction with a corresponding gate of the second set of gate structures. The gate of the first set of gate structures is separated from the corresponding gate of second set of gate structures in the second direction by a first distance.

Abstract: A semiconductor device includes a first cell. The first cell includes a first functional feature, a first sensitivity region, at least one anchor node, wherein each of the at least one anchor node is different from the first functional feature, and a number of anchor nodes of the at least one anchor node linked to the first functional feature is based on a position of the first functional feature relative to the first sensitivity region. The semiconductor device further includes a second cell abutting the first cell. The second cell includes a second functional feature, wherein the second functional feature satisfies a minimum spacing requirement with respect to the first functional feature.

Abstract: Boundary cells may be provided. A boundary of a first functional cell of a circuit is determined. A first plurality of a first type of dummy cells are placed along a first portion of the determined boundary. The first portion extends in a first direction. Each of the first type of dummy cells comprises first pre-defined dimensions. A second plurality of a second type of dummy cells are placed along a second portion of the determined boundary. The second portion extends in a second direction. Each of the second type of dummy cells comprises second pre-defined dimensions. The second pre-defined dimensions is different than the first pre-defined dimensions.

Abstract: An IC device includes an interlayer dielectric (ILD), a first tower structure embedded in the ILD, and a first ring region including a portion of the ILD that extends around the first tower structure. The first tower structure includes a plurality of first conductive patterns in a plurality of metal layers, and a plurality of first vias between the plurality of metal layers along a thickness direction of the IC device. The plurality of first conductive patterns and the plurality of first vias are coupled to each other to form the first tower structure. The plurality of first conductive patterns is confined by the first ring region, without extending beyond the first ring region. The first tower structure is a dummy tower structure.

Abstract: An integrated circuit includes a first and second set of gate structures. A center of each of the first set of gate structures is separated from a center of an adjacent gate of the first set of gate structures in a first direction by a first pitch. A center of each of the second set of gate structures is separated from a center of an adjacent gate of the second set of gate structures in the first direction by the first pitch. The first and second set of gate structures extend in a second direction. A gate of the first set of gate structures is aligned in the second direction with a corresponding gate of the second set of gate structures. The gate of the first set of gate structures is separated from the corresponding gate of second set of gate structures in the second direction by a first distance.

Abstract: A semiconductor device includes a first cell. The first cell includes a first functional feature, a first sensitivity region, at least one anchor node, wherein each of the at least one anchor node is different from the first functional feature, and a number of anchor nodes of the at least one anchor node linked to the first functional feature is based on a position of the first functional feature relative to the first sensitivity region. The semiconductor device further includes a second cell abutting the first cell. The second cell includes a second functional feature, wherein the second functional feature satisfies a minimum spacing requirement with respect to the first functional feature.

Abstract: Boundary cells may be provided. A boundary of a first functional cell of a circuit is determined. A first plurality of a first type of dummy cells are placed along a first portion of the determined boundary. The first portion extends in a first direction. Each of the first type of dummy cells comprises first pre-defined dimensions. A second plurality of a second type of dummy cells are placed along a second portion of the determined boundary. The second portion extends in a second direction. Each of the second type of dummy cells comprises second pre-defined dimensions. The second pre-defined dimensions is different than the first pre-defined dimensions.

Abstract: An integrated circuit includes a first and second set of gate structures. A center of each of the first set of gate structures is separated from a center of an adjacent gate of the first set of gate structures in a first direction by a first pitch. A center of each of the second set of gate structures is separated from a center of an adjacent gate of the second set of gate structures in the first direction by the first pitch. The first and second set of gate structures extend in a second direction. A gate of the first set of gate structures is aligned in the second direction with a corresponding gate of the second set of gate structures. The gate of the first set of gate structures is separated from the corresponding gate of second set of gate structures in the second direction by a first distance.

Abstract: A semiconductor device includes a first cell. The first cell includes a first functional feature, a first sensitivity region, at least one anchor node, wherein each of the at least one anchor node is different from the first functional feature, and a number of anchor nodes of the at least one anchor node linked to the first functional feature is based on a position of the first functional feature relative to the first sensitivity region. The semiconductor device further includes a second cell abutting the first cell. The second cell includes a second functional feature, wherein the second functional feature satisfies a minimum spacing requirement with respect to the first functional feature.

Abstract: Systems, methods, and devices are described herein for integrated circuit (IC) layout validation. A plurality of IC patterns are collected which include a first set of patterns capable of being manufactured and a second set of patterns incapable of being manufactured. A machine learning model is trained using the plurality of IC patterns. The machine learning model generates a prediction model for validating IC layouts. The prediction model receives data including a set of test patterns comprising scanning electron microscope (SEM) images of IC patterns. Design violations associated with an IC layout are determined based on the SEM images and the plurality of IC patterns. A summary of the design violations is provided for further characterization of the IC layout.

Abstract: Boundary cells may be provided. A boundary of a first functional cell of a circuit is determined. A first plurality of a first type of dummy cells are placed along a first portion of the determined boundary. The first portion extends in a first direction. Each of the first type of dummy cells comprises first pre-defined dimensions. A second plurality of a second type of dummy cells are placed along a second portion of the determined boundary. The second portion extends in a second direction. Each of the second type of dummy cells comprises second pre-defined dimensions. The second pre-defined dimensions is different than the first pre-defined dimensions.

Abstract: A method of manufacturing an integrated circuit includes generating a layout design of the integrated circuit, manufacturing the integrated circuit based on the layout design, and removing a portion of a gate structure of a set of gate structures thereby forming a first and a second gate structure. Generating the layout design includes placing a set of gate layout patterns and a cut feature layout pattern on the first layout level. The cut feature layout pattern extends in a first direction, overlaps the set of gate layout patterns and identifies a location of the portion of the gate structure of the set of gate structures. The set of gate layout patterns correspond to fabricating a set of gate structures. The set of gate layout patterns extending in a second direction and overlapping a set of gridlines that extend in the second direction.

Abstract: Systems, methods, and devices are described herein for integrated circuit (IC) layout validation. A plurality of IC patterns are collected which include a first set of patterns capable of being manufactured and a second set of patterns incapable of being manufactured. A machine learning model is trained using the plurality of IC patterns. The machine learning model generates a prediction model for validating IC layouts. The prediction model receives data including a set of test patterns comprising scanning electron microscope (SEM) images of IC patterns. Design violations associated with an IC layout are determined based on the SEM images and the plurality of IC patterns. A summary of the design violations is provided for further characterization of the IC layout.

Abstract: Systems, methods, and devices are described herein for integrated circuit (IC) layout validation. A plurality of IC patterns are collected which include a first set of patterns capable of being manufactured and a second set of patterns incapable of being manufactured. A machine learning model is trained using the plurality of IC patterns. The machine learning model generates a prediction model for validating IC layouts. The prediction model receives data including a set of test patterns comprising scanning electron microscope (SEM) images of IC patterns. Design violations associated with an IC layout are determined based on the SEM images and the plurality of IC patterns. A summary of the design violations is provided for further characterization of the IC layout.

Abstract: A method for mitigating extreme ultraviolet (EUV) mask defects is disclosed. The method includes the steps of providing a wafer blank, identifying a first plurality of defects on the wafer blank, providing an EUV mask design on top of the wafer blank, identifying non-critical blocks with corresponding stretchable zones on the EUV mask design, overlapping the EUV blank with the EUV mask design, identifying a second plurality of defects, the second plurality of defects are solved, identifying a third plurality of defects, the third plurality of defects are not solved, adjusting the relative locations of the EUV mask design and the EUV blank to solve at least one of the third plurality of defects, and adjusting the locations of at least one of the non-critical blocks within corresponding stretchable zones to solve at least one of the third plurality of defects.

Abstract: A method including decomposing a conflict graph based on a number of masked to be used to manufacture a semiconductor device. The method further includes determining whether the decomposed conflict graph is a simplified graph based on a comparison between the decomposed conflict graph and a stored conflict graph. The method further includes determining whether the decomposed conflict graph is colorable based on a number of masks used to pattern the layer of the semiconductor device. The method further includes indicating that the conflict graph is colorable in response to a determination that the decomposed conflict graph is colorable.