Patents by Inventor Wen Li

Wen Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090076283
    Abstract: The present invention provides for a crystalline polymorph of Carvedilol phosphate salt and a process for making the same.
    Type: Application
    Filed: September 5, 2008
    Publication date: March 19, 2009
    Applicant: ScinoPharm Taiwan Ltd.
    Inventors: Wen-Li Shih, Shu-Ping Chen
  • Publication number: 20090068524
    Abstract: The invention relates to proton-conducting polymers, including tetrazole-containing polymers. Proton-conducting membranes useful for fuel cell applications are formed from mixtures of a polymer with one or more non-aqueous proton sources. In representative examples of the present invention, tetrazole groups are attached to a polymer backbone such as polyphosphazene, the tetrazole groups interacting with the proton source.
    Type: Application
    Filed: September 9, 2008
    Publication date: March 12, 2009
    Applicant: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Wen Li, John Muldoon
  • Patent number: 7502076
    Abstract: A method and apparatus for a digital video display. A digital display device receives an analog signal representing an image formed of pixels in video lines and a signal containing a synchronization waveform for the image. An analog-to-digital converter (ADC) receives the analog signal and converts it to a sampled digital waveform. A phase-locked loop including a programmable frequency divider controls the sampling time for the ADC. The programmable frequency divider is controlled by a dividing-ratio algorithm that selects a dividing ratio, measures the number of pixels in a video line using the dividing ratio, and recomputes the dividing ratio by multiplying the selected dividing ratio by the expected number of pixels in a video line and dividing by the measured number of pixels. The sampling phase for the ADC is selected by a sampling-phase control algorithm that minimizes a function representative of the flatness of the sampled digital waveform.
    Type: Grant
    Filed: July 21, 2005
    Date of Patent: March 10, 2009
    Assignee: Texas Instruments Incorporated
    Inventors: Liming Xiu, Wen Li, Xiaopeng Li
  • Publication number: 20090061635
    Abstract: A method for forming micro-patterns is disclosed. The method forms a sacrificial layer and a mask layer. A plurality of first taper trenches is formed in the sacrificial layer. A photoresist layer is filled in the plurality of first taper trenches. The photoresist layer is used as a mask and a plurality of second taper trenches is formed in the sacrificial layer. Then, the photoresist layer is stripped to be capable of patterning a layer by the first taper trenches and the second taper trenches in the sacrificial layer. Therefore, a patterned sacrificial layer duplicating the line density by double etching is formed.
    Type: Application
    Filed: April 23, 2008
    Publication date: March 5, 2009
    Inventors: Hsiao-Che WU, Ming-Yen Li, Wen-Li Tsai
  • Publication number: 20090062429
    Abstract: This invention relates to a method to make an article comprising the steps of combining a semi-amorphous polymer having a heat of fusion of less than 70 J/g with a plasticizer and optionally one or more additives, to produce a polymer concentrate, combining the polymer concentrate with one or more final materials to produce an article precursor; and forming the article at least partially from the article precursor, wherein the polymer concentrate preferably shows no visible phase separation as demonstrated by the polymer concentrate having no visually detectable loss of the plasticizer after a portion of the polymer concentrate is aged on an absorbent surface for 24 hours at 25° C. An article produced by the method is also disclosed.
    Type: Application
    Filed: April 29, 2005
    Publication date: March 5, 2009
    Inventors: James Coffey, Wen Li, Bruce Lundmark, Bryan Chapman
  • Patent number: 7493042
    Abstract: An optical communication system including a plurality of transceiver ports each including a transmitter configured to produce a downstream MLM-spectrum signal and a receiver configured to receive an upstream spectrum-sliced signal. The spectrum of the downstream MLM-spectrum signal comprises a plurality of distinct narrow-spectrum peaks each corresponding to a longitudinal mode.
    Type: Grant
    Filed: June 14, 2006
    Date of Patent: February 17, 2009
    Assignee: Broadway Networks, Ltd.
    Inventors: Wen Li, Qing Zhu
  • Publication number: 20090039273
    Abstract: A photon-counting detector includes a direct conversion material constructed to directly convert an energy of at least one incident photon to an electrical signal indicative of the energy level of the at least one individual photon and a data acquisition system (DAS). The DAS includes a first comparator having a first signal level threshold that is less than an electrical signal level that is indicative of a maximum energy of a spectrum of photons, the first comparator configured to output a count when the electrical signal level exceeds the first signal level threshold, and a second comparator having a second signal level threshold that is greater than or equal to the electrical signal level indicative of the maximum energy of the spectrum of photons, the second comparator configured to output a count when the electrical signal exceeds the second signal level threshold.
    Type: Application
    Filed: August 10, 2007
    Publication date: February 12, 2009
    Inventors: John Eric Tkaczyk, Samit Kumar Basu, Wen Li, Yanfeng Du
  • Publication number: 20090043049
    Abstract: The present invention relates to a polyolefin composition that includes 60 to 99 wt % of one or more polyolefin polymers and 1 to 40 wt % of a regularly branched PAO (“rbPAO”) based on the total weight of the polyolefin polymer(s) and the rbPAO, wherein the rbPAO includes oligomers of one or more C2 to C20 alpha-olefins having a kinematic viscosity at 100° C. (“KV100° C.”) of 3 to 3000 cSt, a Branching Irregularity Index (“BII”) of 0.40 or less, a molar-average carbon number (“CLAO”) of 6 to 14, and a Mw/Mn of less than 2.3.
    Type: Application
    Filed: June 16, 2008
    Publication date: February 12, 2009
    Inventors: Bryan R. Chapman, Margaret M. Wu, Wen Li, Mun Fu Tse
  • Publication number: 20090039428
    Abstract: A fabricating method for silicon on insulator is disclosed, and the fabricating method includes stripping the oxide and the nitride on the bottom surface of each of the trenches, forming a porous silicon on portions of the substrate by an anodizing process, spin coating a dielectric material to fill up the trenches and performing a thermal process to convert the porous silicon to an insulating layer.
    Type: Application
    Filed: March 24, 2008
    Publication date: February 12, 2009
    Inventors: Hsiao-Che Wu, Ming-Yen Li, Wen-Li Tsai
  • Patent number: 7488945
    Abstract: Count rates may be obtained from one or more subpixels for a given pixel in an imaging system detector. Count rates may be obtained from individual subpixels, or may be from electronically binned subpixels at least in part in various subpixel arrangements where a selected subpixel arrangement may be adaptively set according to a detected count rate. For lower count rates, two or more subpixels may be electronically binned together and the counts may be obtained from the binned subpixels, for example to mitigate a charge sharing effect. For higher count rates, the count rates of a greater number of subpixels may be individually obtained, for example to mitigate a pulse pile-up effect. Detective quantum efficiency may be optimized over a wider range of photon flux rate via the adaptive subpixel arrangement.
    Type: Grant
    Filed: November 30, 2005
    Date of Patent: February 10, 2009
    Assignee: General Electric Company
    Inventors: Wen Li, John Eric Tkaczyk, Yanfeng Du, James Leblanc
  • Patent number: 7486764
    Abstract: A CT detector includes a plurality of metallized anodes with each metallized anode separated from another metallized anode by a gap. A direct conversion material is electrically coupled to the plurality of metallized anodes and has a charge sharing region in which an electrical charge generated by an x-ray impinging the direct conversion material is shared between at least two of the plurality of metallized anodes. An x-ray attenuating material is positioned to attenuate x-rays directed toward the charge sharing region.
    Type: Grant
    Filed: January 23, 2007
    Date of Patent: February 3, 2009
    Assignee: General Electric Company
    Inventors: John Eric Tkaczyk, Yanfeng Du, Wen Li
  • Publication number: 20090031158
    Abstract: An apparatus and method is disclosed to compensate for skew and asymmetry of a locally processed system clock used to synchronize an output signal, e.g., a data signal or a timing signal, from a logic circuit, for example a memory device. A first phase detector, array of delay lock loop (DLL) delay elements and accompanying circuitry are disclosed to phase-lock the rising edge of the output signal with the rising edge of the system clock XCLK signal. Additionally, a comparator circuit, a register delay, an array of DLL delay elements and accompanying circuitry are disclosed to add or subtract delay from the falling edge of the DQ signal in order to produce a symmetrical output of the DQ signal.
    Type: Application
    Filed: August 5, 2008
    Publication date: January 29, 2009
    Inventors: Wen Li, Aaron Schoenfeld, R. Jacob Baker
  • Publication number: 20090023268
    Abstract: An isolation method of active area for semiconductor forms an isolated active area in a substrate. The substrate is a p-type silicon substrate. A pad oxide layer is formed on the substrate. A patterned sacrificial layer and an upper mask layer are formed on the pad oxide layer, where the upper mask layer is formed over the isolation region of the substrate. A gap is formed between the patterned sacrificial layer and the upper mask layer. An implantation process is performed to dope ions into the substrate through the gap, which forms an n-type barrier to surround the active areas. Lastly, the patterned sacrificial layer is stripped, and an anodization process is utilized to convert p-type bulk silicon into porous silicon. Then, an oxidation process is performed to oxidize the porous silicon to form a silicon dioxide isolation region for the active areas.
    Type: Application
    Filed: April 23, 2008
    Publication date: January 22, 2009
    Inventors: Hsiao-Che WU, Ming-Yen Li, Wen-Li Tsai
  • Publication number: 20090023264
    Abstract: A method of making planar-type bottom electrode for semiconductor device is disclosed. A sacrificial layer structure is formed on a substrate. Multiple first trenches are defined in the sacrificial layer structure, wherein those first trenches are arranged in a first direction. The first trenches are filled with insulating material to form an insulating layer in each first trench. Multiple second trenches are defined in the sacrificial layer structure between the insulating layers, and are arranged in a second direction such that the second trenches intersect the first trenches. The second trenches are filled with bottom electrode material to form a bottom electrode layer in each second trench. The insulating layers separate respectively the bottom electrode layers apart from each other. Lastly, removing the sacrificial layer structure defines a receiving space by two adjacent insulating layers and two adjacent bottom electrode layers.
    Type: Application
    Filed: March 18, 2008
    Publication date: January 22, 2009
    Inventors: Hsiao-Che Wu, Ming-Yen Li, Wen-Li Tsai
  • Patent number: 7476710
    Abstract: This invention relates to a molded article comprising a heterogeneous blend that includes: 1) from 60 to 99 weight percent of one or more semi-crystalline propylene homopolymers or copolymers having a melting point between 100 and 170 ° C. and a melt flow rate of 200 dg/min or less; and 2) from 1 to 40 weight % of one or more semi-amorphous propylene /C2 and/or C4 to C10 ?-olefin copolymers each having a particular heat of fusion, a melt flow rate, intermolecular compositional distribution as determined by thermal fractionation in hexane, Mw/Mn, and propylene triad tacticity such that the molded part formed from the resulting blend has improved notched impact strength, flexibility, elongation, and resistance to stress whitening at a thickness of from 250 ?pm to 10 mm.
    Type: Grant
    Filed: December 9, 2005
    Date of Patent: January 13, 2009
    Assignee: ExxonMobil Chemical Patents Inc.
    Inventors: Aspy K. Mehta, Sudhin Datta, Wen Li, Srivatsan S. Iyer
  • Publication number: 20080316674
    Abstract: Capacitors and methods for fabricating the same are provided. An exemplary embodiment of a capacitor comprises a dielectric layer and a first conductive layer thereover. A supporting rib is embedded in the first conductive layer and extends along a first direction. A second conductive layer is embedded in the first conductive layer and extends along a second direction perpendicular with the first direction, wherein a portion of the second conductive layer forms across the supporting rib and is structurally supported by the supporting rib. A capacitor layer is formed between the first and second conductive layers to electrically insulate the first and second conductive layers.
    Type: Application
    Filed: December 10, 2007
    Publication date: December 25, 2008
    Inventors: Hsiao-Che Wu, Ming-Yen Li, Wen-Li Tsai
  • Patent number: 7468224
    Abstract: There is provided a battery containing an electrolyte, according to which oxidative decomposition of the electrolyte is suppressed. The battery contains a positive electrode having an active material and an electron conducting material. The electron conducting material has a barrier layer at least on the surface thereof. This barrier layer is substantially constituted from at least one material selected from (a) oxides of elements in group 2 to 14 and the third or subsequent period of the periodic table, (b) carbides of elements in group 2 to 14 and the third or subsequent period of the periodic table, (c) nitrides of elements in group 2 to 14 and the third or subsequent period of the periodic table, and (d) tungsten.
    Type: Grant
    Filed: March 15, 2005
    Date of Patent: December 23, 2008
    Assignee: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Wen Li, Yutaka Oyama, Masaki Matsui
  • Publication number: 20080308738
    Abstract: A solid-state photomultiplier (SSPM) includes an optical isolation structure therein. The SSPM includes a substrate and an epitaxial diode layer positioned on the substrate. A plurality of avalanche photodiodes (APDs) are fabricated on the epitaxial diode layer and the optical isolation structure is positioned about the plurality of APDs to separate each of the plurality of APDs from adjacent APDs. The optical isolation structure contains at least one of a light absorbing material and a light reflecting material deposited therein to reduce optical crosstalk and dark count rate in the SSPM.
    Type: Application
    Filed: June 15, 2007
    Publication date: December 18, 2008
    Inventors: Wen Li, Scott Stephen Zelakiewicz
  • Publication number: 20080286649
    Abstract: A lithium-ion battery comprises a negative electrode, a positive electrode, and an electrolyte containing a molten salt, a lithium salt, and an electrolyte additive. The electrolyte additive is chosen to increase the lithium ion conductivity of electrolyte. The electrolyte additive may be an organic, additive, such as an organic carbonate. In other examples, the electrolyte additive provides a source of alkali metal cations other than lithium, such as potassium, sodium, and/or cesium ions. An analogous approach can be taken for batteries using ionic species other than lithium.
    Type: Application
    Filed: February 14, 2008
    Publication date: November 20, 2008
    Applicant: Toyota Motor Engineering & Manufacturing North America, Inc.
    Inventors: Wen Li, Yutaka Oyama
  • Publication number: 20080278174
    Abstract: An improved circuit and method for detecting dielectric breakdown and ground fault conditions is provided. The circuitry and method of the present invention include taking a continuous voltage reading of the high voltage battery and sampling the continuous voltage reading of the high voltage battery at a fixed time interval. The circuitry and method calculate a change in the continuous voltage reading of the high voltage battery over the change in time and repeatedly calculate an optimum fixed time interval and an optimum change in voltage over time. Storage of the optimum fixed time interval and optimum change in voltage over time provides for repeatedly comparing the optimum change in voltage over the fixed time interval to the constant voltage of the high voltage battery to calculate the resistance of the dielectric breakdown fault. The calculation of the resistance of the dielectric breakdown fault is carried out independently of the capacitance of the electric circuit.
    Type: Application
    Filed: May 11, 2007
    Publication date: November 13, 2008
    Inventors: Edward Li, Mark Gunderson, Wen Li