Abstract: Various embodiments of the present application are directed towards a control gate layout to improve an etch process window for word lines. In some embodiments, an integrated chip comprises a memory array, an erase gate, a word line, and a control gate. The memory array comprises a plurality of cells in a plurality of rows and a plurality of columns. The erase gate and the word line are elongated in parallel along a row of the memory array. The control gate is elongated along the row and is between and borders the erase gate and the word line. Further, the control gate has a pad region protruding towards the erase gate and the word line. Because the pad region protrudes towards the erase gate and the word line, a width of the pad region is spread between word-line and erase-gate sides of the control gate.

Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming an interconnect structure over a substrate. The method includes forming a first conductive pad and a mask layer over the interconnect structure. The mask layer covers a top surface of the first conductive pad. The method includes forming a metal oxide layer over a sidewall of the first conductive pad. The method includes forming a second conductive pad over the first conductive pad and passing through the mask layer. The first conductive pad and the second conductive pad are made of different materials.

Abstract: A method includes bonding a first wafer to a second wafer, with a first plurality of dielectric layers in the first wafer and a second plurality of dielectric layers in the second wafer bonded between a first substrate of the first wafer and a second substrate in the second wafer. A first opening is formed in the first substrate, and the first plurality of dielectric layers and the second wafer are etched through the first opening to form a second opening. A metal pad in the second plurality of dielectric layers is exposed to the second opening. A conductive plug is formed extending into the first and the second openings.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive, from a network node associated with a first carrier, a downlink control information (DCI) transmission indicative of synchronization information corresponding to a second carrier, wherein the second carrier comprises a synchronization-signal-block-less (SSB-less) carrier. The UE may communicate via the second carrier based on the synchronization information. Numerous other aspects are described.

Abstract: Various embodiments of the present disclosure provide a memory device and methods of forming the same. In one embodiment, a memory device is provided. The memory device includes a gate electrode disposed in an insulating material layer, a ferroelectric dielectric layer disposed over the gate electrode, a metal oxide semiconductor layer disposed over the ferroelectric dielectric layer, a source feature disposed over the metal oxide semiconductor layer, wherein the source feature has a first dimension, and a source extension. The source extension includes a first portion disposed over the source feature, wherein the first portion has a second dimension that is greater than the first dimension. The source extension also includes a second portion extending downwardly from the first portion to an elevation that is lower than a top surface of the source feature.

Abstract: Various embodiments of the present disclosure provide a memory device and methods of forming the same. In one embodiment, a memory device is provided. The memory device includes a first oxide material having a first sidewall and a second sidewall, a first spacer layer in contact with the first sidewall of the first oxide material, the first spacer layer having a first conductivity type, a second spacer layer in contact with the second sidewall of the first oxide material, wherein the second spacer layer has the first conductivity type. The memory device also includes a channel layer having a second conductivity type that is opposite to the first conductivity type, wherein the channel layer is in contact with the first oxide material, the first spacer layer, and the second spacer layer. The memory device further includes a ferroelectric layer in contact with the channel layer.

Abstract: Aspects of the subject disclosure may include, for example, obtaining contextual information associated with a user, wherein the user is engaged in an immersive environment using a target user device, and wherein the contextual information comprises user profile data, data regarding a location of the user, data regarding one or more inputs provided by the user, or a combination thereof, receiving data regarding a metaverse object in the immersive environment, determining a relevance of the metaverse object to the user based on the contextual information and the data regarding the metaverse object, responsive to the determining the relevance of the metaverse object to the user, generating a personalized recommendation or review of the metaverse object for the user, and causing the personalized recommendation or review to be provided to the user in the immersive environment for user consumption. Other embodiments are disclosed.

Abstract: A user equipment (UE) may obtain a plurality of reference signal received power (RSRP) measurements, each RSRP measurement of the plurality of RSRP measurements corresponding to an antenna port of a plurality of antenna ports associated with the UE. The UE may calculate a path loss and a transmit power for the plurality of antenna ports based on a worst RSRP measurement of the plurality of RSRP measurements, and may transmit a sounding reference signal (SRS) based on the transmit power. This may reduce a likelihood that a network node incorrectly estimates the channel conditions experienced by the UE and may improve the channel estimation capabilities of the network node.

Abstract: Extended reality augmentation of situational navigation (e.g., using a computerized tool) is enabled. For example, a system can comprise: a processor and a memory that stores executable instructions that, when executed by the processor, facilitate performance of operations, comprising: based on a route of a vehicle, determining a navigational instruction to be displayed via an augmented reality interface of the vehicle, and displaying the navigational instruction via the augmented reality interface, wherein displaying the navigational instruction comprises displaying a virtual leading vehicle to be followed by the vehicle.

Abstract: An artificial intelligence (AI) automation to improve network quality based on predicted locations is provided. A method can include training, by a first device comprising a processor and according to model configuration parameters received from a second device that is not the first device, a local machine learning model with training data derived from first location data collected by the first device; transmitting, by the first device to the second device, anonymized model features associated with the local machine learning model; in response to the transmitting of the anonymized model features, receiving, by the first device from the second device, an aggregated machine learning model; and estimating, by the first device, a future position of the first device by applying the aggregated machine learning model to second location data collected by the first device.

Abstract: Disclosed herein is a diclofenac prodrug represented by formula (I), wherein each of the substituents is given the definition as set forth in the Specification and Claims. Also disclosed is a method for alleviating arthritis, which includes administering to a subject in need thereof the aforesaid diclofenac prodrug.

Abstract: In one example, a method performed by a processing system including at least one processor includes downloading at least one digital resource relating to a user-defined location, acquiring data about the user-defined location from a sensor located in the user-defined location, while the user is present in the user-defined location, detecting a user need based on the data from the sensor, augmenting the at least one digital resource with the data from the sensor to produce content that is responsive to the user need, and presenting the content that is responsive to the user need.

Abstract: Aspects of the subject disclosure may include, for example, obtaining a list of a plurality of communication channels, each communication channel being associated with at least one respective feature of a plurality of features; correlating each communication channel in the list with at least one respective user response of a plurality of user responses; receiving an identification of a new communication channel that does not exist in the list, the new communication channel being associated with at least one feature of the plurality of features; determining, based upon the at least one feature that is associated with the new communication channel, with which one or more of the plurality of communication channels in the list the new communication channel is similar, resulting in a determination; and assigning, based upon the determination, at least one of the plurality of user responses to the new communication channel. Other embodiments are disclosed.

Abstract: Aspects of the subject disclosure may include, for example, analyzing, by a processing system, a customer message to determine a customer care issue and a customer sentiment, and generating a response to engage with the customer based on the customer sentiment; the response includes the information to address the customer care issue. The system also delivers the response to the equipment of the customer; monitors for a customer reaction to the delivered response to determine a change in the customer sentiment; and generates an additional response to further engage with the customer based on the change in the customer sentiment. Other embodiments are disclosed.

Abstract: Methods, systems, and devices for wireless communications are described. The method may include a first network node (e.g., a user equipment (UE)) receiving first control information indicative of a first feedback scheme for multicast transmissions in a non-terrestrial network (NTN) and determining an applied feedback scheme based on the first feedback scheme. The method may also include the first network node monitoring for a multicast transmission and operating in accordance with the applied feedback scheme.

Abstract: A pressure-reducing dressing is adapted for securing medical equipment to the skin of a human body, and includes a skin contact pad adapted for locating the medical equipment, a water barrier laminate positioned on the skin contact pad, and a release sheet. The water barrier laminate includes a body layer and an adhesive layer formed on a side surface of the body layer that faces the skin contact pad and adhered to the skin. The body layer has a positioning portion and two divisional portions extending from the positioning portion and spaced apart from each other by a separating gap. The release sheet is attached to the adhesive layer of the water barrier laminate.

Abstract: Aspects of the subject disclosure may include, for example, a method in which a processing system analyzes data including a user profile and historical data relating to previous interactions between an automated agent and equipment of the user. The method also includes determining a desirable outcome of an interaction between the automated agent and the user equipment; constructing a model for generating an expected outcome of a step of the interaction; using the model to perform a simulation of a next step of the interaction by generating an expected outcome for each of a plurality of possible actions, resulting in a plurality of expected outcomes; and selecting a next action for the next step of the interaction. If the desirable outcome is not obtained, the system can refine the plurality of possible actions to perform a simulation of a subsequent step of the interaction. Other embodiments are disclosed.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may transmit, to a network entity, capability information relating to a capability of the UE for processing unicast and multicast physical downlink shared channel (PDSCH) transmissions. The UE may receive configuration information that indicates unicast parameters for unicast PDSCH transmissions and multicast parameters for multicast PDSCH transmissions. The UE may receive at least one of one or more unicast PDSCH transmissions or one or more multicast PDSCH transmissions in a slot in a serving cell in accordance with a maximum soft buffer size associated with the UE and a maximum data rate associated with the UE, wherein the maximum soft buffer size and the maximum data rate are based at least in part on at least one of the unicast parameters or the multicast parameters. Numerous other aspects are described.

Abstract: A ferroelectric memory device includes a semiconductor structure, a stack structure disposed on the semiconductor structure and including multiple dielectric layers and multiple conductive layers that are alternatingly stacked, and multiple memory arrays extending through the stack structure. Each of the memory arrays includes two spaced-apart memory segments connecting to the stack structure, multiple spaced-apart channel portions each being connected to a corresponding one of the memory segments, and multiple pairs of source/bit lines that are spaced apart from each other. Each of the pairs of the source/bit lines is connected between corresponding two of the channel portions. The ferroelectric memory device further includes multiple carrier structures each being connected to one of the source/bit lines in a corresponding one of the pairs of the source/bit lines, and being separated from the other one of the source/bit lines in the corresponding one of the pairs of the source/bit lines.