Abstract: A manufacturing system for an inkjet printing flexible display device includes a substrate input module, a substrate transferring module, a printing module, a post-printing processing module, a solid content detection module, a film packaging printing module, a film formation detection module, a substrate output module. At the same time, the functional modules are highly integrated and optimized in structure and layout. The manufacturing system for the inkjet printing flexible display device is suitable for industrial production and are adopted to monitor the manufacturing process by using a plurality of detection modules.

Abstract: A manufacturing system for an inkjet printing flexible display device includes a substrate input module, a substrate transferring module, a printing module, a post-printing processing module, a solid content detection module, a film packaging printing module, a film formation detection module, a substrate output module. At the same time, the functional modules are highly integrated and optimized in structure and layout. The manufacturing system for the inkjet printing flexible display device is suitable for industrial production and are adopted to monitor the manufacturing process by using a plurality of detection modules.

Abstract: There is provided a system and method for optimizing mapping, tracking, and transporting of content data on a webpage using client-side technologies. The system including a server and a client device, the client device configured to retrieve content data from a first webpage accessed from the server, assemble a cookie using the content data from the first webpage, store the cookie in a memory of the client device, detect a second webpage accessed, retrieve the cookie in response to detecting the second webpage, extract the content data from the cookie, and load the content data on the second webpage.

Abstract: This invention involves structure and fabrication method of a black silicon-based MEMS thermopile IR detector. The high-performance black silicon-based MEMS thermopile IR detector includes a substrate; a releasing barrier band on the substrate; a thermal isolation cavity constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation cavity; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series thus to form a thermopile. Metallic electrodes are located beside the electrically-connected thermopiles for signal output. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures, the heat conductor is located at the lateral sides of the thermal isolation cavity.

Abstract: The invention involves structure and fabrication method of a high performance IR detector. The structure comprises a substrate; a releasing barrier band on the substrate; a thermal isolation chamber constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation chamber and the black silicon-based IR absorber is set on the releasing barrier band; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures as well as the heat conductor under the first thermal-conductive-electrical-isolated structures.

Abstract: This invention involves structure and fabrication method of a black silicon-based MEMS thermopile IR detector. The high-performance black silicon-based MEMS thermopile IR detector includes a substrate; a releasing barrier band on the substrate; a thermal isolation cavity constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation cavity; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series thus to form a thermopile. Metallic electrodes are located beside the electrically-connected thermopiles for signal output. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures, the heat conductor is located at the lateral sides of the thermal isolation cavity.

Abstract: The invention involves structure and fabrication method of a high performance IR detector. The structure comprises a substrate; a releasing barrier band on the substrate; a thermal isolation chamber constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation chamber and the black silicon-based IR absorber is set on the releasing barrier band; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures as well as the heat conductor under the first thermal-conductive-electrical-isolated structures.

Abstract: A through-silicon via and a method for forming the same are provided. The method includes: providing a semiconductor substrate, the semiconductor substrate including an upper surface and an opposite lower surface; etching the upper surface of the semiconductor substrate to form an opening; filling the opening with a conductive material to form a first nail; etching the lower surface of the semiconductor substrate to form a recess, such that the first nail is exposed at a bottom of the recess; filling the recess with a conductive material that can be etched, and etching the conductive material that can be etched to form a second nail, such that the second nail is vertically connected with the first nail; and filling a gap between the second nail and the semiconductor substrate and a gap between the second nail and an adjacent second nail with a dielectric layer. Then invention can improve the reliability of through-silicon vias and avoid voids.

Abstract: The present invention provides a semiconductor device and a method for manufacturing the same. The method includes: providing a substrate; forming a gate stack on the substrate; forming an inter layer dielectric (ILD) to cover the device; etching the ILD at both sides of the gate stack and the substrate below the ILD, so as to form a groove of source and drain regions respectively; depositing a metal diffusion barrier layer in the groove; and filling the groove with a metal to form the source and drain regions. The semiconductor device includes: a substrate; a gate stack on the substrate; an inter layer dielectric (ILD) covering the device; a groove of source and drain regions formed in the ILD at both sides of the gate stack and the substrate below the ILD; and a metal diffusion barrier layer and a metal filler formed in the groove.

Abstract: A through-silicon via and a method for forming the same are provided. The method includes: providing a semiconductor substrate, the semiconductor substrate including an upper surface and an opposite lower surface; etching the upper surface of the semiconductor substrate to form an opening; filling the opening with a conductive material to form a first nail; etching the lower surface of the semiconductor substrate to form a recess, such that the first nail is exposed at a bottom of the recess; filling the recess with a conductive material that can be etched, and etching the conductive material that can be etched to form a second nail, such that the second nail is vertically connected with the first nail; and filling a gap between the second nail and the semiconductor substrate and a gap between the second nail and an adjacent second nail with a dielectric layer. Then invention can improve the reliability of through-silicon vias and avoid voids.

Abstract: The present invention provides a semiconductor device and a method for manufacturing the same. The method includes: providing a substrate; forming a gate stack on the substrate; forming an inter layer dielectric (ILD) to cover the device; etching the ILD at both sides of the gate stack and the substrate below the ILD, so as to form a groove of source and drain regions respectively; depositing a metal diffusion barrier layer in the groove; and filling the groove with a metal to form the source and drain regions. The semiconductor device includes: a substrate; a gate stack on the substrate; an inter layer dielectric (ILD) covering the device; a groove of source and drain regions formed in the ILD at both sides of the gate stack and the substrate below the ILD; and a metal diffusion barrier layer and a metal filler formed in the groove.

Abstract: A light emitting device having a die that includes a light source that generates light of a first wavelength and a layer of phosphor particles covering the die is disclosed. The phosphor particles convert a portion of the light of the first wavelength to light of a second wavelength. The light source can be fabricated by attaching the light source to a substrate, and converting the light source by applying a light converting layer that includes a volatile carrier material and particles of a phosphor that convert light of the first wavelength to light of the second wavelength over the light source. The volatile carrier material is then caused to evaporate leaving a layer of the phosphor particles over the light source. A binder material can be incorporated in the volatile carrier for binding the phosphor particles to one another after the volatile carrier material is evaporated.

Abstract: A method for producing a light emitting device using two phosphors dispersed homogenously in a host matrix. The host matrix may be a polymer, such as heat and/or UV curable epoxy, silica glass, silica gel, silicone, etc. A dispersant, preferably inorganic, is applied to the host matrix to create a strong and stable three dimensional network within the host matrix. The BGS and ZnSeS phosphors are trapped equally in the three dimensional network, holding them homogenously in place within the host matrix. In one embodiment, the inorganic dispersant can be a hydrophobic formed silica, such as, for example, R812.

Abstract: A light source is disclosed. The light source has a light-emitting chip that includes an LED that generates light in an active region thereof. The LED emits a light signal in a forward direction, and infrared radiation generated in the active region is emitted in a side direction in the form of a first infrared signal. The first light signal is determined by a first drive signal coupled to the LED. The light source also includes an infrared detector positioned to collect a portion of the infrared signal. The infrared detector generates a heat signal indicative of the amount of infrared radiation detected. A controller generates the drive signal so as to maintain the heat signal at a first target value. In light sources having LEDs that emit in different spectral ranges, the infrared detectors can all detect heat in the same spectral range.

Abstract: A light emitting device and method for fabricating the device utilizes an adhesive layer of siloxane material to enhance the adhesion of an encapsulant to a light source, one or more leadframes and/or a reflector cup surface. The siloxane layer can be used in different types of light emitting devices, such as lead frame-mounted light emitting diodes (LEDs) and surface mount LEDs with or without reflector cups.

Abstract: A light source and a method for operating the same are disclosed. The light source includes a light emitter and a controller. The light emitter generates light in response to a control signal coupled thereto. The light emitter is characterized by an age related to the amount of light that has been cumulatively generated by the light emitter, the generated light for a given control signal changing with the age. The controller measures the age of the light emitter and generates the control signal based on the desired light intensity and the measured age of the light emitter. In one embodiment, the controller stores an age value for the light emitter, and the controller determines the control signal in response to an input signal specifying a desired light intensity from the light emitter, the controller updating the age value each time the control signal is determined.

Abstract: Illumination apparatus includes a support structure, at least one light emitting element, and a heat sink thermally coupled to the light emitting element. The light emitting element and heat sink are moveable in relation to the support structure. An actuator system moves the at least one light emitting element and the heat sink with respect to the support structure.

Abstract: A light emitting device having a die that includes a light source that generates light of a first wavelength and a layer of phosphor particles covering the die is disclosed. The phosphor particles convert a portion of the light of the first wavelength to light of a second wavelength. The light source can be fabricated by attaching the light source to a substrate, and converting the light source by applying a light converting layer that includes a volatile carrier material and particles of a phosphor that convert light of the first wavelength to light of the second wavelength over the light source. The volatile carrier material is then caused to evaporate leaving a layer of the phosphor particles over the light source. A binder material can be incorporated in the volatile carrier for binding the phosphor particles to one another after the volatile carrier material is evaporated.

Abstract: A system and method for reverse mounted light array. In one method embodiment, the present invention couples a reverse mounted light-generating source with a substrate. Additionally, the present invention couples an electrical portion of the reverse mounted light generating source with a conductive trace coupled to the reverse side of the substrate, wherein the coupling of the conductive trace with the substrate and the reverse mounted light generating source forms a reverse mounted light array.

Abstract: A method for fabrication of a light source and the light source fabricated by that method are disclosed. The light source is fabricated by mounting a chip having a primary light source on a substrate, the primary light source emitting light of a first wavelength. The chip is connected to power terminals on the substrate for powering the primary light source. A preformed transparent cap of constant thickness is mounted over the chip. The cap includes a wavelength converting material for converting a portion of the light of the first wavelength to a second wavelength. The primary light source is preferably an LED or laser diode. In one embodiment, the cap includes a phosphor that is suspended in a clear compound. In another embodiment, the cap includes a planar sheet of a single crystal phosphor.