Abstract: A method for preparing a copolyester-ether film is provided, wherein the method includes a recycled polyester is provided. Alcoholysis is performed by reacting the recycled polyester with a diol to form a first intermediate, wherein the molar ratio of the recycled polyester to the diol is 1:1.8-2.5. Transesterification is performed to the first intermediate to form a second intermediate, wherein the temperature of transesterification is between 190° C. and 230° C. A polyol is added to the second intermediate and polymerization is performed to form a copolyester-ether, wherein the weight percent of the polyol in the copolyester-ether is 24-55%. The copolyester-ether is manufactured into a flexible film.

Abstract: This invention involves structure and fabrication method of a black silicon-based MEMS thermopile IR detector. The high-performance black silicon-based MEMS thermopile IR detector includes a substrate; a releasing barrier band on the substrate; a thermal isolation cavity constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation cavity; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series thus to form a thermopile. Metallic electrodes are located beside the electrically-connected thermopiles for signal output. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures, the heat conductor is located at the lateral sides of the thermal isolation cavity.

Abstract: A method for preparing a copolyester-ether film is provided, wherein the method includes a recycled polyester is provided. Alcoholysis is performed by reacting the recycled polyester with a diol to form a first intermediate, wherein the molar ratio of the recycled polyester to the diol is 1:1.8-2.5. Transesterification is performed to the first intermediate to form a second intermediate, wherein the temperature of transesterification is between 190° C. and 230° C. A polyol is added to the second intermediate and polymerization is performed to form a copolyester-ether, wherein the weight percent of the polyol in the copolyester-ether is 24-55%. The copolyester-ether is manufactured into a flexible film.

Abstract: The invention involves structure and fabrication method of a high performance IR detector. The structure comprises a substrate; a releasing barrier band on the substrate; a thermal isolation chamber constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation chamber and the black silicon-based IR absorber is set on the releasing barrier band; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures as well as the heat conductor under the first thermal-conductive-electrical-isolated structures.

Abstract: This invention involves structure and fabrication method of a black silicon-based MEMS thermopile IR detector. The high-performance black silicon-based MEMS thermopile IR detector includes a substrate; a releasing barrier band on the substrate; a thermal isolation cavity constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation cavity; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series thus to form a thermopile. Metallic electrodes are located beside the electrically-connected thermopiles for signal output. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures, the heat conductor is located at the lateral sides of the thermal isolation cavity.

Abstract: The invention involves structure and fabrication method of a high performance IR detector. The structure comprises a substrate; a releasing barrier band on the substrate; a thermal isolation chamber constructed by the releasing barrier band; a black silicon-based IR absorber located right above the thermal isolation chamber and the black silicon-based IR absorber is set on the releasing barrier band; a number of thermocouples are set around the lateral sides of the black silicon-based IR absorber. The thermopiles around the black silicon-based IR absorber are electrically connected in series. The cold junctions of the thermopile are connected to the substrate through the first thermal-conductive-electrical-isolated structures as well as the heat conductor under the first thermal-conductive-electrical-isolated structures.

Abstract: A continuous-type automatic label separating apparatus is formed of a frame, a driving device, and a label separating device. The frame includes a feeding port and a discharging port. The driving device is mounted to one side of the label separation device. The label separation device is formed of a rotary shaft, a combination-type cutter unit, and an adjustable nail unit. The combination-type cutter unit is installed to the rotary shaft. The adjustable nail unit surrounds the combination-type cutter unit. A label-separation interval is formed between the combination-type cutter unit and the adjustable nail unit. The combination-type cutter unit includes a circular or polygonal cross-section. The adjustable nail unit includes label separating bolts. Each of the label separating bolts includes an adjustable fixed needle. The adjustable nail unit also includes a slide rail formed of concavities and convexities opposite to the concavities.

Abstract: A control circuit of light emitting diodes is used for driving at least one series of light emitting diodes. The control circuit includes a current setting pin, a driving current generator, a regulator circuit, and an adjuster. A reference current flows through the current setting pin. The driving current generator is used for generating a driving current flowing through the series of light emitting diodes according to the reference current. The adjuster generates an adjustment voltage according to the reference current. Then, the regulator circuit generates a supply voltage to drive the series of light emitting diodes, and regulates a voltage of a first terminal of the series of light emitting diodes at a target voltage according to the adjustment voltage. The target voltage is increased with decrease of the driving current when the driving current is less than a first predetermined current.

Abstract: A battery assembly device is disclosed. The battery assembly device includes a first frame and a plurality of battery units. The first frame has an inner surface. The plurality of battery units are disposed in the first frame, wherein any one battery unit has at least one anti-slip film and is used for touching another anti-slip film of another battery unit via the anti-slip film, or touching the inner face of the first frame via the anti-slip film.

Abstract: A through-silicon via and a method for forming the same are provided. The method includes: providing a semiconductor substrate, the semiconductor substrate including an upper surface and an opposite lower surface; etching the upper surface of the semiconductor substrate to form an opening; filling the opening with a conductive material to form a first nail; etching the lower surface of the semiconductor substrate to form a recess, such that the first nail is exposed at a bottom of the recess; filling the recess with a conductive material that can be etched, and etching the conductive material that can be etched to form a second nail, such that the second nail is vertically connected with the first nail; and filling a gap between the second nail and the semiconductor substrate and a gap between the second nail and an adjacent second nail with a dielectric layer. Then invention can improve the reliability of through-silicon vias and avoid voids.

Abstract: The present invention provides a semiconductor device and a method for manufacturing the same. The method includes: providing a substrate; forming a gate stack on the substrate; forming an inter layer dielectric (ILD) to cover the device; etching the ILD at both sides of the gate stack and the substrate below the ILD, so as to form a groove of source and drain regions respectively; depositing a metal diffusion barrier layer in the groove; and filling the groove with a metal to form the source and drain regions. The semiconductor device includes: a substrate; a gate stack on the substrate; an inter layer dielectric (ILD) covering the device; a groove of source and drain regions formed in the ILD at both sides of the gate stack and the substrate below the ILD; and a metal diffusion barrier layer and a metal filler formed in the groove.

Abstract: An electronic device includes a chassis, a circuit board and the resilient piece. The chassis includes a bottom panel. The circuit board has a ground plane. The resilient piece includes a soldering portion and a resisting portion. The soldering portion is in electrical connection with the ground plane, and the resisting piece abuts the bottom panel to prevent the electromagnetic interference (EMI) from the circuit board.

Abstract: A through-silicon via and a method for forming the same are provided. The method includes: providing a semiconductor substrate, the semiconductor substrate including an upper surface and an opposite lower surface; etching the upper surface of the semiconductor substrate to form an opening; filling the opening with a conductive material to form a first nail; etching the lower surface of the semiconductor substrate to form a recess, such that the first nail is exposed at a bottom of the recess; filling the recess with a conductive material that can be etched, and etching the conductive material that can be etched to form a second nail, such that the second nail is vertically connected with the first nail; and filling a gap between the second nail and the semiconductor substrate and a gap between the second nail and an adjacent second nail with a dielectric layer. Then invention can improve the reliability of through-silicon vias and avoid voids.

Abstract: The present invention provides a semiconductor device and a method for manufacturing the same. The method includes: providing a substrate; forming a gate stack on the substrate; forming an inter layer dielectric (ILD) to cover the device; etching the ILD at both sides of the gate stack and the substrate below the ILD, so as to form a groove of source and drain regions respectively; depositing a metal diffusion barrier layer in the groove; and filling the groove with a metal to form the source and drain regions. The semiconductor device includes: a substrate; a gate stack on the substrate; an inter layer dielectric (ILD) covering the device; a groove of source and drain regions formed in the ILD at both sides of the gate stack and the substrate below the ILD; and a metal diffusion barrier layer and a metal filler formed in the groove.

Abstract: A light emitting device having a die that includes a light source that generates light of a first wavelength and a layer of phosphor particles covering the die is disclosed. The phosphor particles convert a portion of the light of the first wavelength to light of a second wavelength. The light source can be fabricated by attaching the light source to a substrate, and converting the light source by applying a light converting layer that includes a volatile carrier material and particles of a phosphor that convert light of the first wavelength to light of the second wavelength over the light source. The volatile carrier material is then caused to evaporate leaving a layer of the phosphor particles over the light source. A binder material can be incorporated in the volatile carrier for binding the phosphor particles to one another after the volatile carrier material is evaporated.

Abstract: A thermoplastic polyurethane includes the reaction product of a diisocyanate component, a polyol component having a molecular weight ranging from 1000 to 8000, and a chain extender component including a diol and an aromatic diamine. The thermoplastic polyurethane has a weight average molecular weight ranging from 200,000 to 800,000. Products, such as films, fibers, or filaments, made of the thermoplastic polyurethane are also disclosed.

Abstract: A die bonding apparatus comprising a tape transfer device and a bonding device is provided. The tape transfer device includes a roller tape and a first roller axle. The roller tape comprises a plurality of glue layers and a first releasing film. Both surfaces of the glue layers are adhesive. The first releasing film covers one of the surfaces of the glue layers. The first roller axle is used for rolling up the first releasing film so as to rotate the roller tape. The bonding device is disposed at the front end of the tape transfer device. The bonding device includes at least a robotic arm and a controller. The controller controls the rotation and movement of the robotic arm.

Abstract: A method for producing a light emitting device using two phosphors dispersed homogenously in a host matrix. The host matrix may be a polymer, such as heat and/or UV curable epoxy, silica glass, silica gel, silicone, etc. A dispersant, preferably inorganic, is applied to the host matrix to create a strong and stable three dimensional network within the host matrix. The BGS and ZnSeS phosphors are trapped equally in the three dimensional network, holding them homogenously in place within the host matrix. In one embodiment, the inorganic dispersant can be a hydrophobic formed silica, such as, for example, R812.

Abstract: A light source is disclosed. The light source has a light-emitting chip that includes an LED that generates light in an active region thereof. The LED emits a light signal in a forward direction, and infrared radiation generated in the active region is emitted in a side direction in the form of a first infrared signal. The first light signal is determined by a first drive signal coupled to the LED. The light source also includes an infrared detector positioned to collect a portion of the infrared signal. The infrared detector generates a heat signal indicative of the amount of infrared radiation detected. A controller generates the drive signal so as to maintain the heat signal at a first target value. In light sources having LEDs that emit in different spectral ranges, the infrared detectors can all detect heat in the same spectral range.

Abstract: A light emitting device and method for fabricating the device utilizes an adhesive layer of siloxane material to enhance the adhesion of an encapsulant to a light source, one or more leadframes and/or a reflector cup surface. The siloxane layer can be used in different types of light emitting devices, such as lead frame-mounted light emitting diodes (LEDs) and surface mount LEDs with or without reflector cups.