Abstract: A semiconductor structure includes a first pair of source/drain features (S/D), a first stack of channel layers connected to the first pair of S/D, a second pair of S/D, and a second stack of channel layers connected to the second pair of S/D. The first pair of S/D each include a first epitaxial layer having a first dopant, a second epitaxial layer having a second dopant and disposed over the first epitaxial layer and connected to the first stack of channel layers, and a third epitaxial layer having a third dopant and disposed over the second epitaxial layer. The second pair of S/D each include a fourth epitaxial layer having a fourth dopant and connected to the second stack of channel layers, and a fifth epitaxial layer having a fifth dopant and disposed over the fourth epitaxial layer. The first dopant through the fourth dopant are of different species.

Abstract: A semiconductor structure includes a substrate, semiconductor layers, source/drain features, metal oxide layers, and a gate structure. The semiconductor layers are over the substrate and spaced apart from each other in a Z-direction. The source/drain features are over the substrate. The semiconductor layers are between the source/drain features. The metal oxide layers are on top surfaces and bottom surfaces of the semiconductor layers. The gate structure covers and is in contact with center portions of the metal oxide layers on top surfaces and bottom surfaces of the semiconductor layers.

Abstract: A method, computer system, and a computer program product for smart SDN is provided. The present invention may include recording and clustering a pod's behavior to generate a behavior transition model for the pod. The present invention may include watching a behavior of the pod and comparing the behavior to the generated behavior transition model. The present invention may include triggering a network policy change based on determining that the behavior of the pod is a misbehavior.

Abstract: A method for forming a semiconductor structure includes the steps of forming a stacked structure on a substrate, forming an insulating layer on the stacked structure, forming a passivation layer on the insulating layer, performing an etching process to form an opening through the passivation layer and the insulating layer to expose a portion of the stacked structure and an extending portion of the insulating layer, and forming a contact structure filling the opening and directly contacting the stacked structure, wherein the extending portion of the insulating layer is adjacent to a surface of the stacked structure directly contacting the contact structure.

Abstract: A semiconductor structure includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a first passivation layer on the insulating layer, a contact structure disposed on the first passivation layer and extending through the first passivation layer to directly contact a portion of the barrier layer, and an insulating layer interposed between the barrier layer and the first passivation layer and comprising an extending portion protruding toward a bottom corner of the contact structure.

Abstract: A flexible power plant based on supercritical carbon dioxide power circulation is provided. The plant includes a heat source circulation system, a thermodynamic circulation system, a desalination system and a control system. The heat source circulation system is connected to the thermodynamic circulation system and the seawater desalination system, and provides heat source required for their operations, respectively; the control system is simultaneously connected to respective actuators of the heat source circulation system, the thermodynamic circulation system and the seawater desalination system, and controls their operations, correspondingly.

Abstract: Semiconductor devices having improved source/drain features and methods for fabricating such are disclosed herein. An exemplary device includes a semiconductor layer stack disposed over a mesa structure of a substrate. The device further includes a metal gate disposed over the semiconductor layer stack and an inner spacer disposed on the mesa structure of the substrate. The device further includes a first epitaxial source/drain feature and a second epitaxial source/drain feature where the semiconductor layer stack is disposed between the first epitaxial source/drain feature and the second epitaxial source/drain feature. The device further includes a void disposed between the inner spacer and the first epitaxial source/drain feature.

Abstract: An OTP memory capacitor structure includes a semiconductor substrate, a bottom electrode, a capacitor insulating layer and a metal electrode stack structure. The bottom electrode is provided on the semiconductor substrate. The capacitor insulating layer is provided on the bottom electrode. The metal electrode stack structure includes a metal layer, an insulating sacrificial layer and a capping layer stacked in sequence. The metal layer is provided on the capacitor insulating layer and is used as a top electrode. The insulating sacrificial layer is provided between the metal layer and the capping layer. A manufacturing method of the OTP memory capacitor structure is also provided. By the provision of the insulating sacrificial layer, the bottom electrode formed first can be prevented from being damaged by subsequent etching and other processes, so that the OTP memory capacitor structure has better electrical characteristics.

Abstract: A semiconductor device and method of manufacture are provided which utilize an air gap to help isolate conductive structures within a dielectric layer. A first etch stop layer is deposited over the conductive structures, and the first etch stop layer is patterned to expose corner portions of the conductive structures. A portion of the dielectric layer is removed to form an opening. A second etch stop layer is deposited to line the opening, wherein the second etch stop layer forms a stepped structure over the corner portions of the conductive structures. Dielectric material is then deposited into the opening such that an air gap is formed to isolate the conductive structures.

Abstract: A semiconductor device includes an insulating layer, wherein the insulating layer has a via opening and a conductive line opening. The semiconductor device further includes a via in the via opening. The semiconductor device further includes a conductive line in the conductive line opening. The conductive line includes a first liner layer, wherein a first thickness of the first liner layer over the via is less than a second thickness of the first liner layer over the insulating layer, and a conductive fill, wherein the first liner layer surrounds the conductive fill.

Abstract: The present disclosure provides a system for signal optimization adjustment based on different heat source information. The system includes a plurality of heat source measurers, a first system chip, a second system chip, an electrical interconnection, and a bit error risk evaluator. The first system chip includes a signal transmitter, and the second system chip includes a signal receiver. The second system chip provides an electrical characteristic state of the signal receiver, and a signal adjustment information of the signal transmitter and/or the signal receiver. The bit error risk evaluator performs a signal optimization adjustment for an electrical characteristic of the signal receiver according to the electrical characteristic state. The present disclosure further provides a method for signal optimization adjustment.

Abstract: A light-emitting assembly includes a substrate and a plurality of light-emitting elements disposed on the substrate. The substrate includes a base material layer, a first electrical conductive layer and a protection layer in a sectional view. A thickness of the first electrical conductive layer is greater than a thickness of the protection layer. The thickness of the protection layer is greater than 0 ?m and less than 30 ?m. This disclosure can improve the non-uniform brightness issue (hotspots) or enhance the optical performance.

Abstract: An electronic system is provided. The electronic system includes a processor and a first power management circuit. The processor generates and outputs a first data frame. The first data frame includes at least one first guard bit and a first address. The first power management circuit includes a first register. The first power management circuit receives the first data frame and determines legitimacy of the first address according to the least one first guard bit. In response to that the first address is legal, the power management circuit transmits a first response to the processor and accesses a first region in the first register according to the first address.

Abstract: An organic electroluminescent material is used for a sensitizer layer of an organic light-emitting diode. The organic electroluminescent material includes a structure of the following General Formula (1): A is selected from the group consisting of General Formula (2), a carbazole group, and a substituted benzimidazole group. The present invention also discloses an organic light-emitting diode which has a sensitizer layer. The sensitizer layer includes a structure of General Formula (1).

Abstract: A semiconductor structure includes a substrate, a stacked structure on the substrate, an insulating layer on the stacked structure, a passivation layer on the insulating layer, and a contact structure through the passivation layer and the insulating layer and directly contacting the stacked structure. The insulating layer has an extending portion protruding from a sidewall of the passivation layer and adjacent to a surface of the stacked structure directly contacting the contact structure.

Abstract: A semiconductor structure includes substrate, semiconductor layers, source/drain features, metal oxide layers, and a gate structure. The semiconductor layers extend in an X-direction and over the substrate. The semiconductor layers are spaced apart from each other in a Z-direction. The source/drain features are on opposite sides of the semiconductor layers in the X-direction. The metal oxide layers cover bottom surfaces of the semiconductor layers. The gate structure wraps around the semiconductor layers and the metal oxide layers. The metal oxide layers are in contact with the gate structure.

Abstract: A memory device includes a substrate, first semiconductor fin, second semiconductor fin, first gate structure, second gate structure, first gate spacer, and a second gate spacer. The first gate structure crosses the first semiconductor fin. The second gate structure crosses the second semiconductor fin, the first gate structure extending continuously from the second gate structure, in which in a top view of the memory device, a width of the first gate structure is greater than a width of the second gate structure. The first gate spacer is on a sidewall of the first gate structure. The second gate spacer extends continuously from the first gate spacer and on a sidewall of the second gate structure, in which in the top view of the memory device, a width of the first gate spacer is less than a width of the second gate spacer.

Abstract: An operation control method suitable for a fire extinguishing system of an extra-high voltage converter station is provided. The method includes: after an upper computer control system receives a sound-light alarm signal, an alarm position signal, and a switch position dividing signal, starting a spray range prediction analysis subsystem for a fixed fire monitor; determining, by the spray range prediction analysis subsystem for the fixed fire monitor based on an external wind direction and an external wind speed, whether a range of a fire monitor effectively covers an entire area of a converter transformer; and if yes, automatically presetting a first fire monitor to which a first compressed air foam generation subsystem belongs and a second fire monitor to which a second compressed air foam generation subsystem belongs; or if no, replacing a fire monitor with a mobile fire-fighting robot to extinguish a fire.

Abstract: An integrated machine for fully automatic core drilling and direct pulling is disclosed, including a housing, a support member, a pulling mechanism, and a pulling joint. The pulling joint is configured to hold a top of a test piece for pulling testing. The pulling mechanism includes a worm gear motor, a drive screw set at an output end of the worm gear motor, a drive support rod, a tension sensor set at the other end of the drive support rod, an adjustable link block at one end connected to the tension sensor, and a pulling screw connected to the other end of the adjustable link block. The integrated machine has a simple structure, lightweight equipment, which can be handheld and easy to operate, thus do not need to have operating experience, thereby realizing core drilling and direct pulling test in one.