Abstract: An intelligent waste wooden formwork recovery and recycling system includes a screening part, a feeding part, and a processing part. The screening part includes a wood board unit, a wood strip unit and a wood block unit disposed inside a frame unit. The feeding part includes three conveying units inclined and disposed within an installation unit, and ends of the three conveying units are respectively aligned with the wood board unit, wood strip unit and wood block unit. The processing part includes a compaction unit, a moving unit, a discharging unit, a gauze unit, and a glue brushing unit sequentially disposed on a bracket unit. Wood materials are classified into three types and the three-layer conveying mechanism effectively controls an addition order of the wood material, significantly improving an utilization rate of the wood materials and ensuring a uniform density distribution of the compacted wood materials.

Abstract: A transfer system adaptable to performing levelling alignment includes a transfer head that picks up micro devices, the transfer head having a plurality of pick-up heads protruded from a bottom surface of the transfer head; and a levelling fixture configured to perform levelling alignment for the transfer head, the levelling fixture having a plurality of cavities that are concave downwards to correspondingly accommodate the pick-up heads respectively.

Abstract: A wireless charging device is disclosed. At least one floating charging component is arranged in the wireless charging device, the floating charging component comprises a supporting plate, a power transmission coil, and a magnetic element, the top wall of a housing is provided with at least one mounting hole, and the floating charging component is movably arranged in the mounting hole, so that when the device to be charged is placed on a bearing surface of the top wall, the magnetic element is able to attract the device to be charged so that the outer surface of the supporting plate contacts with the device to be charged, so that ensures that the power transmission coil and the device to be charged be aligned with each other and the distance between them is small, thereby ensuring the wireless charging rate.

Abstract: A diode is formed in an active region. The diode includes a P-type component embedded in a first portion of the active region, an N-type component embedded in a second portion of the active region, and an undoped component disposed between the P-type component and the N-type component. An interconnect structure is formed over a first side of the diode. Different portions of the interconnect structure are electrically coupled to the P-type component and the N-type component, respectively. One or more openings are etched through a dielectric structure disposed over a second side of the diode opposite the first side. A dopant material is implanted into the active region through the one or more openings. The one or more openings are filled with a conductive material.

Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.

Abstract: A camera apparatus includes a bearing member, a first drive assembly, a camera module, a rotating member, and a lifting member. The first drive assembly is mounted on the bearing member, and the rotating member is rotatably disposed on the bearing member. The first drive assembly fits the rotating member, the rotating member fits the lifting member, and the rotating member is configured to drive the lifting member to ascend or descend during rotation. The camera module includes a camera and a second drive assembly, the second drive assembly is connected to the camera, and the second drive assembly is configured to drive the camera to ascend or descend.

Abstract: One aspect of the present disclosure pertains to a semiconductor device. The semiconductor device includes a semiconductor substrate and a transistor formed over the semiconductor substrate. The transistor includes a first source/drain (S/D) feature, a second S/D feature, a channel region interposed between the first and second S/D features, and a gate stack engaging the channel region. The semiconductor device includes a first S/D contact landing on a top surface of the first S/D feature, a second S/D contact landing on a top surface of the second S/D feature, and a dielectric plug penetrating through the semiconductor substrate and landing on a bottom surface of the first S/D feature. The dielectric plug spans a width equal to or smaller than a width of the first S/D feature.

Abstract: A display, a display fabrication method, and an electronic device are provided. The display includes a light-emitting layer. The light-emitting layer includes a fingerprint display region. The fingerprint display region includes a first visible light-emitting unit and an infrared light-emitting unit. The first visible light-emitting unit is superposed on the infrared light-emitting unit. The first visible light-emitting unit is disposed on a side, close to a display surface of the display, of the infrared light-emitting unit.

Abstract: An interconnect fabrication method is disclosed herein that utilizes a disposable etch stop hard mask over a gate structure during source/drain contact formation and replaces the disposable etch stop hard mask with a dielectric feature (in some embodiments, dielectric layers having a lower dielectric constant than a dielectric constant of dielectric layers of the disposable etch stop hard mask) before gate contact formation. An exemplary device includes a contact etch stop layer (CESL) having a first sidewall CESL portion and a second sidewall CESL portion separated by a spacing and a dielectric feature disposed over a gate structure, where the dielectric feature and the gate structure fill the spacing between the first sidewall CESL portion and the second sidewall CESL portion. The dielectric feature includes a bulk dielectric over a dielectric liner. The dielectric liner separates the bulk dielectric from the gate structure and the CESL.

Abstract: A micro-light-emitting diode (microLED) display panel includes a substrate; a plurality of microLEDs disposed and arranged in rows and columns on the substrate; a driver disposed on the substrate; a plurality of first blocking walls respectively disposed between rows of the microLEDs; and a plurality of second blocking walls respectively disposed between the microLEDs of the same row.

Abstract: Packaged devices and methods of manufacturing the devices are described herein. The packaged devices may be fabricated using heterogeneous devices and asymmetric dual-side molding on a multi-layered redistribution layer (RDL) structure. The packaged devices may be formed with a heterogeneous three-dimensional (3D) Fan-Out System-in-Package (SiP) structure having small profiles and can be formed using a single carrier substrate.

Abstract: A semiconductor die and the method of forming the same are provided. The semiconductor die includes a first interconnect structure, a second interconnect structure including a conductive feature, and a device layer between the first interconnect structure and the second interconnect structure. The device layer includes a semiconductor fin, a first gate structure on the semiconductor fin, a source/drain region adjacent the first gate structure, and a shared contact extending through the semiconductor fin to be electrically connected to the source/drain region and the first gate structure. The conductive feature contacts the shared contact.

Abstract: A method for producing carbon nanotubes includes subjecting a plastic material and an acidic zeolite to a pyrolysis reaction so as to form a hydrocarbon compound having 1 to 6 carbon atoms. The acidic zeolite has a molar ratio of SiO2 to Al2O3 ranging from 5.1:1 to 80:1. Another method for producing carbon nanotubes includes subjecting a hydrocarbon compound having 1 to 6 carbon atoms and a catalyst to a catalysis reaction so as to obtain the carbon nanotubes. The catalyst includes a support and a plurality of ferromagnetic nanoparticles supported on the support. The ferromagnetic nanoparticles have an average diameter ranging from 20 nm to 30 nm, and are derived from acetylacetonate of a ferromagnetic transition metal.

Abstract: The present invention provides a method for preparing conductor material with large surface area, which comprises steps of: forming a block layer on the outer surface of a support precursor (for example, a conductive nanometer fiber) for producing a mixed precursor; rolling the mixed precursor to crack a portion of the outer surface of the block layer for producing a plurality of crack-gaps and exposing a portion of the outer surface of the support precursor from the plurality of crack-gaps; and adding a conductor material to the mixed precursor so that the conductor material contacts and is connected electrically to the support precursor via the plurality of crack-gaps for producing a conductor material with large surface area.

Abstract: A semiconductor package is provided. The semiconductor package includes an encapsulating layer, a semiconductor die formed in the encapsulating layer, and an interposer structure covering the encapsulating layer. The interposer structure includes an insulating base having a first surface facing the encapsulating layer, and a second surface opposite the first surface. The interposer structure also includes insulating features formed on the first surface of the insulating base and extending into the encapsulating layer. The insulating features is arranged in a matrix and faces a top surface of the semiconductor die. The interposer structure further includes first conductive features formed on the first surface of the insulating base and extending into the encapsulating layer. The first conductive features surround the matrix of the insulating features.

Abstract: A semiconductor structure and a method of forming the same are provided. An exemplary method of forming the semiconductor structure includes receiving a workpiece including a fin structure over a front side of a substrate, recessing a source region of the fin structure to form a source opening, extending the source opening into the substrate to form a plug opening, forming a semiconductor plug in the plug opening, planarizing the substrate to expose the semiconductor plug from a back side of the substrate, performing a first wet etching process to remove a portion of the substrate, performing a pre-amorphous implantation (PAI) process to amorphize a rest portion of the substrate, performing a second wet etching process to remove the amorphized rest portion of the substrate to form a dielectric opening, depositing a dielectric layer in the dielectric opening, and replacing the semiconductor plug with a backside source contact.

Abstract: The present disclosure provides a geomagnetic positioning device, comprising a base assembly and a connecting assembly. The base assembly comprises a control component, a driving component, and a first geomagnetic component. The control component is electrically connected with the driving component and the first geomagnetic component. The connecting assembly is disposed at the driving component and comprises a second geomagnetic component. Wherein the control component obtains the deviation angle of the second geomagnetic component relative to the first geomagnetic component. The control component controls the driving component according to the deviation angle to adjust the relative angle of the connecting assembly relative to the base assembly.

Abstract: A multilayer polymer capacitor (MLPC), including a casing, a multilayer core, an electroplated positive terminal, a first electroplated negative terminal, and a second electroplated negative terminal. The casing includes a casing body and a cover plate. The casing body is provided with an accommodating cavity, whose bottom is provided with a through hole. The multilayer core is provided in the accommodating cavity. An anode lead-out part and a cathode lead-out part are provided at two ends of the accommodating cavity, respectively. The electroplated positive terminal and the first electroplated negative terminal are provided on outer side surfaces of two ends of the casing, respectively. The second electroplated negative terminal is provided on an outer bottom surface of the casing, and is electrically connected to the multilayer core.

Abstract: An exemplary device includes a frontside power rail disposed over a frontside of a substrate, a backside power rail disposed over a backside of the substrate, an epitaxial source/drain structure disposed between the frontside power rail and the backside power rail. The epitaxial source/drain structure is connected to the frontside power rail by a frontside source/drain contact. The epitaxial source/drain structure is connected to the backside power rail by a backside source/drain via. The backside source/drain via is disposed in a substrate, and a dielectric layer is disposed between the substrate and the backside power rail. The backside source/drain via extends through the dielectric layer and the substrate.

Abstract: There is provided a method and apparatus associated with cluster-based parallel split learning. The method includes a network controller distributing a client-side model to a plurality of client devices in a cluster. The method also includes a server receiving a plurality of transmissions from each of the client devices, each transmission including smashed data and information about data used to generate the smashed data, and the server generating a gradient associated with the smashed data based at least in part on the transmissions. The method includes the server transmitting the gradient associated with the smashed data to the client devices, and the network controller receiving updated client-side models from each of the client devices. The method also includes the network controller generating an aggregated client-side model based on the received updated client-side models and transmitting the aggregated client-side model to a second cluster of client devices.