Abstract: Disclosed is a manufacturing method for a high silicon grain oriented electrical steel sheet, the silicon content of the high silicon grain oriented electrical steel is greater than 4 wt %, comprising the steps of: (1) performing decarburization annealing of a cold-rolled steel plate; (2) allowing high silicon alloy particles in a completely solid state to collide at a high speed with the surface of the decarburization annealed steel plate to be sprayed, thus forming a high silicon alloy coating on the surface of the steel plate to be sprayed; (3) coating a release agent and drying; and (4) annealing. The manufacturing method for the high silicon grain oriented electrical steel sheet of the present invention is inexpensive, and, the high silicon grain oriented electrical steel sheet produced is of stable quality and is provided with great magnetic performance.

Abstract: Apparatus and methods for measuring surface topography are described. The analysis apparatus and methods detect light reflected from the reflective backside of a cantilever assembly including a tip, calculate a background level (BGL) value obtained from an optical scan of a reference sample using a power spectral density (PSD) value obtained from a topographical scan of a reference sample to generate a correlational coefficient between the BGL and the PSD values. The correlational coefficient between the BGL and PSD values is used to measure the BGL value of additional EUV mask blanks by a topographical scan of the EUV mask blanks using the same tip mounted to the cantilever.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods of forming EUV mask blanks and production systems therefor are disclosed. The EUV mask blanks comprise a multilayer reflective stack on a substrate. The multilayer reflective stack comprises a trilayer film including a first film, a second film, and a third film. Some EUV mask blanks include an interface layer on one or more of the first film, the second film and the third film. EUV mask blanks described herein have low Zeff and high reflectance over large bandwidth of reflection angle, thereby minimizing the M3D effect, especially for high-NA EUV scanners.

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets. A process for improving reflectivity from a multilayer stack is also disclosed.

Abstract: Extreme ultraviolet (EUV) mask blanks, production systems therefor, and methods of increasing multilayer film reflectance are disclosed. The EUV mask blanks comprise a bilayer film on a substrate. The bilayer film comprises a first film layer including silicon (Si), and a second film layer comprising an element selected from the group consisting of ruthenium (Ru), nickel (Ni), cobalt (Co), tungsten (W), iron (Fe), titanium (Ti) and silicides thereof. Some EUV mask blanks further comprise a multilayer reflective stack comprising alternating layers on the bilayer film and a capping layer on the multilayer reflective stack. Some EUV mask blanks include a smoothing layer selected from the group consisting of molybdenum silicide (MoSi), boron carbide (B4C) and silicon nitride (SiN) on the multilayer reflective stack, a capping layer on the smoothing layer, and an absorber layer on the capping layer.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.

Abstract: A physical vapor deposition chamber comprising a tilting substrate support is described. Methods of processing a substrate are also provided comprising tilting at least one of the substrate and the target to improve the uniformity of the layer on the substrate from the center of the substrate to the edge of the substrate. Process controllers are also described which comprise one or more process configurations causing the physical deposition chamber to perform the operations of rotating a substrate support within the physical deposition chamber and tilting the substrate support at a plurality of angles with respect to a horizontal axis.

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets.

Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising a tantalum-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.

Abstract: Extreme ultraviolet (EUV) mask blanks, production systems therefor, and methods of reducing roughness are disclosed. The EUV mask blanks comprise a multilayer reflective stack on a substrate comprising a plurality of pairs of alternating layers comprising a first layer and a second layer, the first layer including a first element selected from the group consisting of Si, B, Al, Mg, Zr, Ba, Nb, Ti, Gd, Y, and Ca; and the second layer including a second element selected from the group consisting of Ru, Mo, Ta, Sb, Tc, Nb, Ir, Pt, and Pd. Some EUV mask blanks described herein include interface layer between the first layer and the second layer, the interface layer including an interface element selected from the group consisting of Si, B, C, Al, Mo, and Ru.

Abstract: A pool cleaner including a housing, a driving assembly, a brush assembly, and a removable debris container. The removable debris container is coupled to the housing through a locking member in the brush assembly.

Abstract: Apparatus and methods to improve centroid wavelength uniformity of EUV mask blanks are disclosed. The apparatus and methods may utilize one or more of heating the backside and/or the front side of the EUV mask blank. Selected regions and sub regions of the EUV mask blank are selectively heated, resulting in improved centroid wavelength uniformity of EUV mask blanks.

Abstract: Apparatus and methods for improving flatness of extreme ultraviolet (EUV) mask blanks are disclosed. The apparatus and methods may utilize one or more of heating the backside and/or the front side of the EUV mask blank and a cooling system. Interfacial layers of the EUV mask blank are selectively heated, resulting in improved flatness of the EUV mask blanks.

Abstract: A pool cleaner for use in a pool may include a housing, a driving assembly, a traction assembly, and a filtration assembly. The driving assembly may include an inlet conduit configured to receive pressurized water, an impeller in fluid communication with the inlet conduit, an outlet conduit in fluid communication with the impeller, and an outlet nozzle coupled to the outlet conduit and may be configured to eject the pressurized water upward from the housing and into the pool in a parallel or oblique ejection direction relative to a vertical axis. The traction assembly may be coupled to the impeller to drive the housing across the pool and the filtration assembly may be configured to filter water from the pool.

Abstract: Apparatus, methods and are disclosed for measuring refractive index of an absorber material used in EUV phase shift masks. The method and apparatus utilize a reference measurement and as series of reflectance measurements at a range of EUV wavelengths and thickness values for the absorber material to determine the refractive index of the absorber material.

Abstract: Apparatus and methods for measuring surface topography are described. The analysis apparatus and methods detect light reflected from the reflective backside of a cantilever assembly including a tip, calculate a background level (BGL) value obtained from an optical scan of a reference sample using a power spectral density (PSD) value obtained from a topographical scan of a reference sample to generate a correlational coefficient between the BGL and the PSD values. The correlational coefficient between the BGL and PSD values is used to measure the BGL value of additional EUV mask blanks by a topographical scan of the EUV mask blanks using the same tip mounted to the cantilever.

Abstract: Apparatus and methods for measuring surface topography are described. The analysis apparatus and methods detect light reflected from the reflective backside of a cantilever assembly including a tip, calculate a background level (BGL) value obtained from an optical scan of a reference sample using a power spectral density (PSD) value obtained from a topographical scan of a reference sample to generate a correlational coefficient between the BGL and the PSD values. The correlational coefficient between the BGL and PSD values is used to measure the BGL value of additional EUV mask blanks by a topographical scan of the EUV mask blanks using the same tip mounted to the cantilever.

Abstract: A pool cleaner equipped with a rotating brush assembly is disclosed. The brush assembly is removably coupled to the pool cleaner using clamps that are readily accessible, supported by the pool cleaner, and operable by hand. The clamps may be manipulated between a ready configuration, a loaded configuration to receive a brush assembly, and a locked configuration to secure the brush assembly.

Abstract: A pool cleaner equipped with a joint and a water inlet hose is disclosed. In a rotatable or use configuration, the water inlet hose is freely rotatable relative to a housing to avoid entanglement. In a locked or non-use configuration, either the joint or the water inlet hose is fixed relative to the housing to facilitate installation and/or removal of the water inlet hose via rotation between the joint and the water inlet hose.