Abstract: An energy storage device capable of suppressing battery spread of battery fire includes a control module and a plurality of battery modules, and the battery modules respectively include an accommodation space, a plurality of battery packs, a plurality of temperature sensors and a controller. The controller provides a first control signal to notify the control module based on an ambient temperature detected by one of the temperature sensors being greater than or equal to a first specific temperature range. The control module is used to transfer a battery capacity of an abnormal battery module of the battery modules providing the first control signal to a backup energy storage module, and the backup energy storage module includes the battery modules except the abnormal battery module or a next-stage device.

Abstract: An electronic device is provided, which includes: a first substrate; a second substrate; a first polarizer, wherein the first substrate is disposed between the second substrate and the first polarizer; and a conductive adhesive disposed on the second substrate, wherein from a top view of the electronic device, a first portion of the conductive adhesive contacts the second substrate and extends along a first extending direction, a second portion of the conductive adhesive contacts the first substrate and extends along a second extending direction, the first extending direction and the second extending direction are different, a length of the second portion of the conductive adhesive along the second extending direction is greater than a length of the first portion of the conductive adhesive along the first extending direction, the first polarizer comprises an arc edge, and the arc edge is adjacent to the conductive adhesive.

Abstract: A battery module capable of suppressing spread of battery fire including a case, a plurality of battery packs, a plurality of temperature sensors, an energy consumption module and a controller. The case forms an accommodation space, and the battery packs is accommodated in the accommodation space. The temperature sensors are dispersedly configured to the accommodation space, and the temperature sensors respectively detect an ambient temperature around configure locations. The controller is coupled to the temperature sensors, and when the ambient temperature detected by one of the temperature sensors is greater than or equal to a first specific temperature range, the controller controls the energy consumption module to consume a battery capacity of at least one battery pack around the one of the temperature sensors.

Abstract: Exemplary electrostatic discharge (ESD) circuit schemes are provided according to various aspects of the present disclosure. In certain aspects, a current path is created during an ESD event that causes current to flow through a resistor coupled to a protected transistor (e.g., a driver transistor). The current through the resistor creates a voltage drop across the resistor, which reduces the voltage seen by the protected transistor. In certain aspects, the current path is provided by an ESD circuit coupled to a node between the resistor and the transistor. In certain aspects, the current path is created by turning on the transistor during the ESD event with a trigger device.

Abstract: The present disclosure provides a biomaterial and a method for promoting tissue regeneration by using the biomaterial.

Abstract: A touch electronic device is provided, which includes: a display unit; a conductive film disposed on the display unit, wherein the conductive film has a surface impedance ranging from 105?/? to 109?/?; and a first polarizer disposed on the conductive film, wherein the conductive film is disposed between the display unit and the first polarizer, wherein a surface impedance of the first polarizer divided by the surface impedance of the conductive film is greater than or equal to 103 and less than or equal to 108.

Abstract: An ESD protection circuit has a driver transistor with a drain that is coupled to an I/O pad of an IC device and a source that is coupled to a first rail of a power supply in the IC device, and a diode that couples the I/O pad to the first rail and that is configured to be reverse-biased when a rated voltage is applied to the I/O pad. The rated voltage lies within a nominal operating range for voltage levels defined for the input/output pad. The ESD protection circuit has a gate pull transistor that couples a gate of the driver transistor to the I/O pad or the first rail. The gate pull transistor may be configured to present a high impedance path between the gate of the driver transistor and the I/O pad or the first rail when the rated voltage is applied to the I/O pad.

Abstract: An ESD protection circuit has a driver transistor with a drain that is coupled to an I/O pad of an IC device and a source that is coupled to a first rail of a power supply in the IC device, and a diode that couples the I/O pad to the first rail and that is configured to be reverse-biased when a rated voltage is applied to the I/O pad. The rated voltage lies within a nominal operating range for voltage levels defined for the input/output pad. The ESD protection circuit has a gate pull transistor that couples a gate of the driver transistor to the I/O pad or the first rail. The gate pull transistor may be configured to present a high impedance path between the gate of the driver transistor and the I/O pad or the first rail when the rated voltage is applied to the I/O pad.

Abstract: A touch electronic device is provided, which includes: a display unit; a conductive film disposed on the display unit, wherein the conductive film has a surface impedance ranging from 105?/? to 109?/?; and a first polarizer disposed on the conductive film, wherein the conductive film is disposed between the display unit and the first polarizer, wherein a surface impedance of the first polarizer divided by the surface impedance of the conductive film is greater than or equal to 103 and less than or equal to 108.

Abstract: A chip includes a pad and a driver having an output coupled to the pad. The chip also includes one or more diodes coupled between the pad and a ground bus, wherein the one or more diodes are in a forward direction from the pad to the ground bus.

Abstract: Exemplary electrostatic discharge (ESD) circuit schemes are provided according to various aspects of the present disclosure. In certain aspects, a current path is created during an ESD event that causes current to flow through a resistor coupled to a protected transistor (e.g., a driver transistor). The current through the resistor creates a voltage drop across the resistor, which reduces the voltage seen by the protected transistor. In certain aspects, the current path is provided by an ESD circuit coupled to a node between the resistor and the transistor. In certain aspects, the current path is created by turning on the transistor during the ESD event with a trigger device.

Abstract: The present disclosure provides a biomaterial and a method for promoting tissue regeneration by using the biomaterial.

Abstract: A laminated structure with an adjustable elastic modulus has multiple connecting elements and at least one connecting point. Each connecting element is an S-shaped curved component, and has an inner end and an outer end. The multiple connecting elements are combined with each other by at least one connecting point, and a diameter of the at least one connecting point is equal to or greater than a diameter of each connecting element connected by the at least one connecting point.

Abstract: A method of protecting a serializer/deserializer (SERDES) differential input/output (I/O) circuit includes detecting an electrostatic discharge event. The method also includes selectively disengaging a power supply terminal from a pair of I/O transistors of the SERDES differential I/O circuit in response to the detected electrostatic discharge event. The method further includes selectively disengaging a ground terminal from the pair of I/O transistors of the SERDES differential I/O circuit in response to the detected electrostatic discharge event.

Abstract: The present invention provides a portable thermal cycling device for quickly changing and regulating temperature, which is used for deoxyribonucleic acid (DNA) detection and amplification. The device adopts the concept of an electrical impedance method for detection, utilizes the spinning coating and electrospinning nanowires technologies to directly fabricate a thin film type thermal cycling device, and under the cooperation of a laser direct writing technology for patterning definition, enables the device to have the function of quickly raising/reducing temperature at one time for DNA amplification.

Abstract: An electrochromic rearview mirror contains a connection assembly, and the connection assembly includes: a first substrate, a first coating layer, a second coating layer, a packaging frame, an electrochromic layer, a first conductive glue, a second conductive glue, at least one third coating layer, at least one fourth coating layer, and a second substrate. The first substrate has a first face and a second face, and the second substrate has a third face and a fourth face. The second coating layer conducts electricity, each of the at least one fourth coating layer is fixed on the third face, and each of the at least one third coating layer is disposed on the third face. Furthermore, the packaging frame and the electrochromic layer are defined among the second coating layer, the fourth coating layer and the third coating layer.

Abstract: An electrochromic rearview mirror contains a connection assembly, and the connection assembly includes: a first substrate, a first coating layer, a second coating layer, a packaging frame, an electrochromic layer, a first conductive glue, a second conductive glue, at least one third coating layer, at least one fourth coating layer, and a second substrate. The first substrate has a first face and a second face, and the second substrate has a third face and a fourth face. The second coating layer conducts electricity, each of the at least one fourth coating layer is fixed on the third face, and each of the at least one third coating layer is disposed on the third face. Furthermore, the packaging frame and the electrochromic layer are defined among the second coating layer, the fourth coating layer and the third coating layer.

Abstract: A method of protecting a serializer/deserializer (SERDES) differential input/output (I/O) circuit includes detecting an electrostatic discharge event. The method also includes selectively disengaging a power supply terminal from a pair of I/O transistors of the SERDES differential I/O circuit in response to the detected electrostatic discharge event. The method further includes selectively disengaging a ground terminal from the pair of I/O transistors of the SERDES differential I/O circuit in response to the detected electrostatic discharge event.

Abstract: Protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a base region of semiconductor material having a first conductivity type, an emitter region within the base region having the opposite conductivity type, and a collector region of semiconductor material having the second conductivity type, wherein at least a portion of the base region resides between the emitter region and the collector region. A depth of the collector region is greater than a depth of the emitter region and less than or equal to a depth of the base region such that a distance between a lateral boundary of the emitter region and a proximal lateral boundary of the collector region is greater than zero and the collector region does not overlap or otherwise underlie the emitter region.

Abstract: Protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a first base region of semiconductor material having a first conductivity type, a second base region of semiconductor material having the first conductivity type and a dopant concentration that is less than the first base region, a third base region of semiconductor material having the first conductivity type and a dopant concentration that is greater than the second base region, an emitter region of semiconductor material having a second conductivity type opposite the first conductivity type within the first base region, and a collector region of semiconductor material having the second conductivity type. At least a portion of the second base region resides between the third base region and the first base region and at least a portion of the first base region resides between the emitter region and the collector region.