Abstract: Protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a base well region having a first conductivity type, an emitter region within the base well region having a second conductivity type opposite the first conductivity type, a collector region having the second conductivity type, a first floating region having the second conductivity type within the base well region between the emitter region and the collector region, and a second floating region having the first conductivity type within the base well region between the first floating region and the collector region. The floating regions within the base well region are electrically connected to reduce current gain and improve holding voltage.

Abstract: Techniques for reducing leakage current during normal operation of an electrostatic discharge (ESD) circuit are described herein. In one embodiment, a circuit comprises an internal circuit and an electrostatic discharge (ESD) rail clamp coupled in parallel to the internal circuit and between first and second power supply rails. The ESD rail clamp is operable to shunt ESD current from the first power supply rail to the second power supply rail via a low resistance shunt path. The ESD rail clamp comprises an ESD trigger circuit configured to detect an ESD event and a plurality of discharging transistors coupled in series. The ESD trigger circuit is configured to turn off the discharging transistors during normal operation and to turn on the discharging transistors to form the low resistance shunt path in response to detection of the ESD event.

Abstract: An integrated circuit is provided. The integrated circuit may include, but is not limited to, a first node, a second node configured to be coupled to ground, an output driver, and a electrostatic discharge circuit electrically coupled to the first node, the second node, and the output driver. The electrostatic discharge circuit may include, but is not limited a high-pass filter configured to detect an electrostatic discharge event at the first node, a driving stage circuit electrically coupled to the high-pass filter and the output driver, the driving stage circuit configured to receive a signal from the high-pass filter when the high-pass filter detects the electrostatic discharge event and further configured to shunt an input of the output driver to the second node in response to the signal from the high-pass filter, and a step-down circuit electrically coupled to the driving stage circuit and configured to bias the driving stage circuit.

Abstract: Die structures for electronic device packages and related fabrication methods are provided. An exemplary die structure includes a substrate having a first layer of semiconductor material including a semiconductor device formed thereon, a handle layer of semiconductor material, and a buried layer of dielectric material between the handle layer and the first layer. The die structure also includes a plurality of shunting regions in the first layer of semiconductor material, wherein each shunting region includes a doped region in the first layer that is electrically connected to the handle layer of semiconductor material, and a body region underlying the doped region that is contiguous with at least a portion of the first layer underlying a semiconductor device.

Abstract: Protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a base region of semiconductor material having a first conductivity type, an emitter region within the base region having the opposite conductivity type, and a collector region of semiconductor material having the second conductivity type, wherein at least a portion of the base region resides between the emitter region and the collector region. A depth of the collector region is greater than a depth of the emitter region and less than or equal to a depth of the base region such that a distance between a lateral boundary of the emitter region and a proximal lateral boundary of the collector region is greater than zero and the collector region does not overlap or otherwise underlie the emitter region.

Abstract: Protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a first base region of semiconductor material having a first conductivity type, a second base region of semiconductor material having the first conductivity type and a dopant concentration that is less than the first base region, a third base region of semiconductor material having the first conductivity type and a dopant concentration that is greater than the second base region, an emitter region of semiconductor material having a second conductivity type opposite the first conductivity type within the first base region, and a collector region of semiconductor material having the second conductivity type. At least a portion of the second base region resides between the third base region and the first base region and at least a portion of the first base region resides between the emitter region and the collector region.

Abstract: Protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a base well region having a first conductivity type, an emitter region within the base well region having a second conductivity type opposite the first conductivity type, a collector region having the second conductivity type, a first floating region having the second conductivity type within the base well region between the emitter region and the collector region, and a second floating region having the first conductivity type within the base well region between the first floating region and the collector region. The floating regions within the base well region are electrically connected to reduce current gain and improve holding voltage.

Abstract: Die structures for electronic device packages and related fabrication methods are provided. An exemplary die structure includes a substrate having a first layer of semiconductor material including a semiconductor device formed thereon, a handle layer of semiconductor material, and a buried layer of dielectric material between the handle layer and the first layer. The die structure also includes a plurality of shunting regions in the first layer of semiconductor material, wherein each shunting region includes a doped region in the first layer that is electrically connected to the handle layer of semiconductor material, and a body region underlying the doped region that is contiguous with at least a portion of the first layer underlying a semiconductor device.

Abstract: A method of using Neutrilized DNA (N-DNA) as a surface probe for a high throughput detection platform is disclosed. FET and SPRi are used as high throughput detection platforms to demonstrate that the N-DNA surface probe produces good results and enhances detection sensitivity. The N-DNA modifies the charged oxygen ions (O?) on the phosphate backbone through methylation, ethylation, propylation, or alkylation, so that the backbone is not charged after this modification to increase the hybridization efficiency, sensitivity and to make the signal more clear.

Abstract: An integrated circuit is provided. The integrated circuit may include, but is not limited to, a first node, a second node configured to be coupled to ground, an output driver, and a electrostatic discharge circuit electrically coupled to the first node, the second node, and the output driver. The electrostatic discharge circuit may include, but is not limited a high-pass filter configured to detect an electrostatic discharge event at the first node, a driving stage circuit electrically coupled to the high-pass filter and the output driver, the driving stage circuit configured to receive a signal from the high-pass filter when the high-pass filter detects the electrostatic discharge event and further configured to shunt an input of the output driver to the second node in response to the signal from the high-pass filter, and a step-down circuit electrically coupled to the driving stage circuit and configured to bias the driving stage circuit.

Abstract: A method of charging a battery includes following steps: First, a charging voltage is provided to charge the battery. Afterward, a charging control variable is judged whether to reach to an adjustment value. Afterward, the charging voltage is adjusted with a first voltage difference to continuously charge the battery when the charging control variable reaches to the adjustment value. Afterward, a health state value of the battery is judged whether less than or equal to a critical health state value. Finally, the charging voltage is increased with a second voltage difference to continuously charge the battery when the health state value of the battery is less than or equal to the critical health state value.

Abstract: An electrostatic discharge (ESD) protection device including a substrate, a first doped region, a second doped region, and a third doped region, a gate and a plurality of contacts is disclosed. The substrate includes a first conductive type. The first doped region is formed in the substrate and includes a second conductive type. The second doped region is formed in the substrate and includes the second conductive type. The third doped region is formed in the substrate, includes the first conductive type and is located between the first and the second doped regions. The gate is formed on the substrate, located between the first and the second doped regions and comprises a first through hole. The contacts pass through the first through hole to contact with the third doped region.

Abstract: The invention discloses a nano-fiber material, wherein the nano-fiber material is formed by spinning an ionic polymer into a nano-fiber nonwoven, and the ionic polymer is represented by the formula: wherein: R1 includes phenyl sulfonate or alkyl sulfonate; R2 includes R3 includes and m/n is between 1/50 and 50/1, q?0.

Abstract: A charging method fit for use with and applicable to a rechargeable battery is provided. The charging method involves charging the rechargeable battery to a first preset voltage and then charging the rechargeable battery to a second preset voltage.

Abstract: Vertical sync signal separation apparatus and method are provided. The vertical sync signal separation apparatus includes a parameter detecting unit, a threshold generating unit and a vertical sync signal generating unit. The parameter detecting unit measures a composite sync signal to obtain a maximum and a second maximum positive pulse width, and a maximum and a second maximum negative pulse width. The threshold generating unit outputs a positive pulse threshold based on the maximum and second maximum positive pulse width, and outputs a negative pulse threshold based on the maximum and second maximum negative pulse width. The vertical sync signal generating unit outputs a vertical sync signal by comparing the composite sync signal against the positive pulse threshold and the negative pulse threshold. As such, this apparatus can correctly separate a vertical sync signal from composite sync signals with different standards, thus increasing its supportability.

Abstract: An electrostatic discharge (ESD) protection device including a substrate, a first doped region, a second doped region, and a third doped region, a gate and a plurality of contacts is disclosed. The substrate includes a first conductive type. The first doped region is formed in the substrate and includes a second conductive type. The second doped region is formed in the substrate and includes the second conductive type. The third doped region is formed in the substrate, includes the first conductive type and is located between the first and the second doped regions. The gate is formed on the substrate, located between the first and the second doped regions and comprises a first through hole. The contacts pass through the first through hole to contact with the third doped region.

Abstract: A bidirectional silicon-controlled rectifier, wherein the conventional field oxide layer, which separates an anode structure from a cathode structure, is replaced by a field oxide layer having floating gates, a virtual gate or a virtual active region. Thus, the present invention can reduce or escape from the bird's beak effect of a field oxide layer, which results in crystalline defects, a concentrated current and a higher magnetic field and then causes abnormal operation of a rectifier. Thereby, the present invention can also reduce signal loss.

Abstract: The invention discloses a transient voltage detection circuit suitable for an electronic system. The electronic system includes a high voltage line and a low voltage line. The transient voltage detection circuit includes at least one detection circuit and a judge module. Each detection circuit includes a P-typed transistor and/or an N-typed transistor, a capacitor and a detection node. The transistor is coupled with the capacitor, and the detection node is located between the transistor and the capacitor. The judge module is coupled to each of the detection nodes. The judge module generates a judgment according to voltage levels of the detection nodes. Accordingly, the transient voltage detection circuit is formed. The electronic system may selectively execute a protective action according to the judgment.

Abstract: An ESD detection circuit for detecting a level of an ESD voltage on a power rail is provided. The ESD detection circuit includes a resistive component, a diode unit, and a controller. The resistive component is coupled between a detection node and a ground node corresponding to the power rail. The diode unit is coupled between the power rail and the detection node in a forward direction toward the power rail. The controller, coupled to the detection node, is used for determining the level of the ESD voltage based on the voltage of the detection node and the breakdown voltage of the diode unit.

Abstract: A charging method fit for use with and applicable to a rechargeable battery is provided. The charging method involves charging the rechargeable battery to a first preset voltage and then charging the rechargeable battery to a second preset voltage.