Patents by Inventor Wen-Yi Chen
Wen-Yi Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8258757Abstract: A charging method fit for use with and applicable to a rechargeable battery is provided. The charging method involves charging the rechargeable battery to a first preset voltage and then charging the rechargeable battery to a second preset voltage.Type: GrantFiled: May 21, 2010Date of Patent: September 4, 2012Assignee: Dynapack International Technology Corp.Inventors: Chung-Hsing Chang, Wen-Yi Chen, Chia-Liang Lin
-
Publication number: 20120188449Abstract: Vertical sync signal separation apparatus and method are provided. The vertical sync signal separation apparatus includes a parameter detecting unit, a threshold generating unit and a vertical sync signal generating unit. The parameter detecting unit measures a composite sync signal to obtain a maximum and a second maximum positive pulse width, and a maximum and a second maximum negative pulse width. The threshold generating unit outputs a positive pulse threshold based on the maximum and second maximum positive pulse width, and outputs a negative pulse threshold based on the maximum and second maximum negative pulse width. The vertical sync signal generating unit outputs a vertical sync signal by comparing the composite sync signal against the positive pulse threshold and the negative pulse threshold. As such, this apparatus can correctly separate a vertical sync signal from composite sync signals with different standards, thus increasing its supportability.Type: ApplicationFiled: May 9, 2011Publication date: July 26, 2012Applicant: SUNPLUS TECHNOLOGY CO., LTD.Inventors: Wen-Yi Chen, Jau-Yih Lin, Pang-Chih Liu
-
Publication number: 20120146151Abstract: An electrostatic discharge (ESD) protection device including a substrate, a first doped region, a second doped region, and a third doped region, a gate and a plurality of contacts is disclosed. The substrate includes a first conductive type. The first doped region is formed in the substrate and includes a second conductive type. The second doped region is formed in the substrate and includes the second conductive type. The third doped region is formed in the substrate, includes the first conductive type and is located between the first and the second doped regions. The gate is formed on the substrate, located between the first and the second doped regions and comprises a first through hole. The contacts pass through the first through hole to contact with the third doped region.Type: ApplicationFiled: March 4, 2011Publication date: June 14, 2012Inventors: Yeh-Jen HUANG, Yeh-Ning Jou, Ming-Dou Ker, Wen-Yi Chen, Chia-Wei Hung, Hwa-Chyi Chiou
-
Publication number: 20120056238Abstract: A bidirectional silicon-controlled rectifier, wherein the conventional field oxide layer, which separates an anode structure from a cathode structure, is replaced by a field oxide layer having floating gates, a virtual gate or a virtual active region. Thus, the present invention can reduce or escape from the bird's beak effect of a field oxide layer, which results in crystalline defects, a concentrated current and a higher magnetic field and then causes abnormal operation of a rectifier. Thereby, the present invention can also reduce signal loss.Type: ApplicationFiled: November 15, 2011Publication date: March 8, 2012Inventors: Wen-Yi CHEN, Ryan Hsin-Chin JIANG, Ming-Dou KER
-
Patent number: 8116049Abstract: The invention discloses a transient voltage detection circuit suitable for an electronic system. The electronic system includes a high voltage line and a low voltage line. The transient voltage detection circuit includes at least one detection circuit and a judge module. Each detection circuit includes a P-typed transistor and/or an N-typed transistor, a capacitor and a detection node. The transistor is coupled with the capacitor, and the detection node is located between the transistor and the capacitor. The judge module is coupled to each of the detection nodes. The judge module generates a judgment according to voltage levels of the detection nodes. Accordingly, the transient voltage detection circuit is formed. The electronic system may selectively execute a protective action according to the judgment.Type: GrantFiled: November 24, 2009Date of Patent: February 14, 2012Assignee: Amazing Microelectronic Corp.Inventors: Ming-Dou Ker, Hsin-Chin Jiang, Wen-Yi Chen
-
Patent number: 8067952Abstract: An ESD detection circuit for detecting a level of an ESD voltage on a power rail is provided. The ESD detection circuit includes a resistive component, a diode unit, and a controller. The resistive component is coupled between a detection node and a ground node corresponding to the power rail. The diode unit is coupled between the power rail and the detection node in a forward direction toward the power rail. The controller, coupled to the detection node, is used for determining the level of the ESD voltage based on the voltage of the detection node and the breakdown voltage of the diode unit.Type: GrantFiled: April 18, 2008Date of Patent: November 29, 2011Assignee: Amazing Microelectronic Corp.Inventors: Ming-Dou Ker, Wen-Yi Chen, Hsin-Chin Jiang
-
Publication number: 20110285359Abstract: A charging method fit for use with and applicable to a rechargeable battery is provided. The charging method involves charging the rechargeable battery to a first preset voltage and then charging the rechargeable battery to a second preset voltage.Type: ApplicationFiled: May 21, 2010Publication date: November 24, 2011Inventors: Chung-Hsing Chang, Wen-Yi Chen, Chia-Liang Lin
-
Publication number: 20100315754Abstract: The invention discloses a transient voltage detection circuit suitable for an electronic system. The electronic system includes a high voltage line and a low voltage line. The transient voltage detection circuit includes at least one detection circuit and a judge module. Each detection circuit includes a P-typed transistor and/or an N-typed transistor, a capacitor and a detection node. The transistor is coupled with the capacitor, and the detection node is located between the transistor and the capacitor. The judge module is coupled to each of the detection nodes. The judge module generates a judgment according to voltage levels of the detection nodes. Accordingly, the transient voltage detection circuit is formed. The electronic system may selectively execute a protective action according to the judgment.Type: ApplicationFiled: November 24, 2009Publication date: December 16, 2010Applicant: AMAZING MICROELECTRONIC CORP.Inventors: Ming-Dou Ker, Wen-Yi Chen, Hsin-Chin Jiang
-
Publication number: 20100219123Abstract: The invention discloses a nano-fiber material, wherein the nano-fiber material is formed by spinning an ionic polymer into a nano-fiber nonwoven, and the ionic polymer is represented by the formula: wherein: R1 includes phenyl sulfonate or alkyl sulfonate; R2 includes R3 includes and m/n is between 1/50 and 50/1, q?0.Type: ApplicationFiled: February 28, 2010Publication date: September 2, 2010Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Wen-Yi Chen, Shu-Hui Cheng, Feng-Hung Tseng
-
Patent number: 7786504Abstract: The present invention discloses a bidirectional PNPN silicon-controlled rectifier comprising: a p-type substrate; a N-type epitaxial layer; a P-type well and two N-type wells all formed inside the N-type epitaxial layer with the two N-type wells respectively arranged at two sides of the P-type well; a first semiconductor area, a second semiconductor area and a third semiconductor area all formed inside the P-type well and all coupled to an anode, wherein the second semiconductor area and the third semiconductor area are respectively arranged at two sides of the first semiconductor area, and wherein the first semiconductor area is of first conduction type, and the second semiconductor area and the third semiconductor area are of second conduction type; and two P-type doped areas respectively formed inside the N-type wells, wherein each P-type doped area has a fourth semiconductor area neighboring the P-type well and a fifth semiconductor area, and wherein both the fourth semiconductor area and the fifth semicoType: GrantFiled: March 20, 2008Date of Patent: August 31, 2010Assignee: Amazing Microelectronic Corp.Inventors: Wen-Yi Chen, Ryan Hsin-Chin Jiang, Ming-Dou Ker
-
Patent number: 7667936Abstract: A circuit for electrostatic discharge (ESD) protection includes a resistor a capacitor connected in series with the resistor, a first transistor including a gate, the gate being connected to a first power supply providing a first voltage to the gate via the resistor and a first terminal connected to the first power supply, a second transistor including a gate, the gate being connected to a second power supply, the second power supply providing a second voltage smaller than the first voltage, the second transistor having a first terminal connected to a second terminal of the first transistor, and a third transistor including a gate, the gate being connected to the second power supply, a first terminal of the third transistor being connected to a second terminal of the second transistor, and a second terminal being connected to a reference voltage different from the first voltage and the second voltage.Type: GrantFiled: June 5, 2008Date of Patent: February 23, 2010Assignee: Industrial Technology Research InstituteInventors: Ming-Dou Ker, Wen-Yi Chen, Che-Hao Chuang
-
Publication number: 20100033164Abstract: A transient noise detection circuit for detecting a level of a transient noise voltage is disclosed. The transient noise detection circuit comprises a triggering circuit, a rectifying circuit, and a controller. The triggering circuit is coupled between a power rail and a ground node. When the triggering circuit receives a transient noise, the triggering circuit generates a triggering signal. The rectifying circuit comprises a rectifying unit and a current-limiting unit coupled in series. When the rectifying unit receives the triggering signal from the triggering circuit, the rectifying unit will be triggered by the triggering signal. The controller is coupled to a detection node between the rectifying unit and the current-limiting unit. The controller is used for determining the level of the transient noise voltage based on the voltage of the detection node.Type: ApplicationFiled: August 7, 2008Publication date: February 11, 2010Applicant: TRANSIENT NOISE DETECTION CIRCUITInventors: Ming Dou KER, Wen Yi CHEN, Hsin Chin JIANG
-
Publication number: 20090287435Abstract: An ESD detection circuit for detecting a level of an ESD voltage on a power rail is provided. The ESD detection circuit includes a resistive component, a diode unit, and a controller. The resistive component is coupled between a detection node and a ground node corresponding to the power rail. The diode unit is coupled between the power rail and the detection node in a forward direction toward the power rail. The controller, coupled to the detection node, is used for determining the level of the ESD voltage based on the voltage of the detection node and the breakdown voltage of the diode unit.Type: ApplicationFiled: April 18, 2008Publication date: November 19, 2009Applicant: AMAZING MICROELECTRONIC CORPInventors: Ming Dou KER, Wen Yi CHEN, Hsin Chin JIANG
-
Publication number: 20090273006Abstract: The present invention discloses a bidirectional silicon-controlled rectifier, wherein the conventional field oxide layer, which separates an anode structure from a cathode structure, is replaced by a field oxide layer having floating gates, a virtual gate or a virtual active region. Thus, the present invention can reduce or escape from the bird's beak effect of a field oxide layer, which results in crystalline defects, a concentrated current and a higher magnetic field and then causes abnormal operation of a rectifier. Thereby, the present invention can also reduce signal loss.Type: ApplicationFiled: April 30, 2008Publication date: November 5, 2009Inventors: Wen-Yi Chen, Ryan Hsin-Chin Jiang, Ming-Dou Ker
-
Publication number: 20090236631Abstract: The present invention discloses a bidirectional PNPN silicon-controlled rectifier comprising: a p-type substrate; a N-type epitaxial layer; a P-type well and two N-type wells all formed inside the N-type epitaxial layer with the two N-type wells respectively arranged at two sides of the P-type well; a first semiconductor area, a second semiconductor area and a third semiconductor area all formed inside the P-type well and all coupled to an anode, wherein the second semiconductor area and the third semiconductor area are respectively arranged at two sides of the first semiconductor area, and wherein the first semiconductor area is of first conduction type, and the second semiconductor area and the third semiconductor area are of second conduction type; and two P-type doped areas respectively formed inside the N-type wells, wherein each P-type doped area has a fourth semiconductor area neighboring the P-type well and a fifth semiconductor area, and wherein both the fourth semiconductor area and the fifth semicoType: ApplicationFiled: March 20, 2008Publication date: September 24, 2009Inventors: Wen-Yi Chen, Ryan Hsin-Chin Jiang, Ming-Dou Ker
-
Publication number: 20090166295Abstract: The invention discloses an adsorptive ion-exchange material, including a polymer of formulas land II. The material has adsorption ability as well as ion-exchange ability for absorbing metal ions, and can be directly spun into fibers of varying diameters. The invention also discloses a method for treating wastewater containing metal ions using the disclosed adsorptive ion-exchange material.Type: ApplicationFiled: October 8, 2008Publication date: July 2, 2009Inventors: Wen-Yi CHEN, Shu-Hui Cheng
-
Publication number: 20080232013Abstract: A circuit for electrostatic discharge (ESD) protection includes a resistor a capacitor connected in series with the resistor, a first transistor including a gate, the gate being connected to a first power supply providing a first voltage to the gate via the resistor and a first terminal connected to the first power supply, a second transistor including a gate, the gate being connected to a second power supply, the second power supply providing a second voltage smaller than the first voltage, the second transistor having a first terminal connected to a second terminal of the first transistor, and a third transistor including a gate, the gate being connected to the second power supply, a first terminal of the third transistor being connected to a second terminal of the second transistor, and a second terminal being connected to a reference voltage different from the first voltage and the second voltage.Type: ApplicationFiled: June 5, 2008Publication date: September 25, 2008Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ming-Dou Ker, Wen-Yi Chen, Che-Hao Chuang
-
Patent number: 7397280Abstract: A circuit for electrostatic discharge (ESD) protection includes a resistor a capacitor connected in series with the resistor, a first transistor including a gate, the gate being connected to a first power supply providing a first voltage to the gate via the resistor and a first terminal connected to the first power supply, a second transistor including a gate, the gate being connected to a second power supply, the second power supply providing a second voltage smaller than the first voltage, the second transistor having a first terminal connected to a second terminal of the first transistor, and a third transistor including a gate, the gate being connected to the second power supply, a first terminal of the third transistor being connected to a second terminal of the second transistor, and a second terminal being connected to a reference voltage different from the first voltage and the second voltage.Type: GrantFiled: March 2, 2006Date of Patent: July 8, 2008Assignee: Industrial Technology Research InstituteInventors: Ming-Dou Ker, Wen-Yi Chen, Che-Hao Chuang
-
Patent number: 7317203Abstract: A 3-dimensional PCM structure and method for using the same for carrying out 3-dimensional integrated circuit wiring electrical testing and failure analysis in an integrated circuit manufacturing process, the method including forming a first metallization layer; carrying out a first wafer acceptance testing (WAT) process to test the electrical continuity of the first metallization layer; forming first metal vias on the first metallization layer conductive portions and a second metallization layer comprising metal islands on the first metal vias wherein the metal islands electrically communicate with the first metallization layer to form a process control monitor (PCM) structure; and, carrying out a second WAT process to test the electrical continuity of the first metallization layer.Type: GrantFiled: July 25, 2005Date of Patent: January 8, 2008Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wen-Yi Chen, Jun-Yean Chiu, Chung Lee, Hung-Hon Lui
-
Patent number: 7283342Abstract: A high-voltage tolerant power-rail ESD clamp circuit is proposed, in which circuit devices can safely operate under the high power supply voltage that is three times larger than their process limitation without gate-oxide reliability issue. Moreover, an ESD detection circuit is used to effectively improve the whole ESD protection function by substrate-triggered technique. Because only low voltage (1*VDD) devices are used to achieve the object of high voltage (3*VDD) tolerance, the proposed design provides a cost effective power-rail ESD protection solution to chips with mixed-voltage interfaces.Type: GrantFiled: July 5, 2006Date of Patent: October 16, 2007Assignee: National Chiao Tung UniversityInventors: Ming-Dou Ker, Wen-Yi Chen