Abstract: A circuit board includes a plurality of pixel areas. Each pixel area includes a plurality of electrode pad groups. The electrode pad groups are arranged in a first direction. Each of the electrode pad groups includes a first electrode pad, a second electrode pad, and a third electrode pad. The first electrode pad, the second electrode pad, and the third electrode pad are arranged in a second direction. The second direction is different from the first direction. The first electrode pad is disposed between the second electrode pad and the third electrode pad. The first electrode pad is configured to provide a first voltage potential. The second electrode pad and the third electrode pad are configured to provide a second voltage potential. The first voltage potential is different from the second voltage potential.

Abstract: An optical component includes a substrate and a low reflection layer. The low reflection layer is disposed on a surface of the substrate, and the low reflection layer includes a plurality of nanoparticles. The nanoparticles are arranged in a stack configuration, and the number of the nanoparticles decreases progressively in a direction away from the substrate, such that an effective refractive index of the low reflection layer decreases progressively in the direction away from the substrate so as to prevent total reflection of light at the interface, thereby reducing reflectivity. When specific conditions are satisfied, the stacked nanoparticles can form a gradient-index film layer, and the low reflection layer can provide better anti-reflection capability.

Abstract: An integrated machine for fully automatic core drilling and direct pulling is disclosed, including a housing, a support member, a pulling mechanism, and a pulling joint. The pulling joint is configured to hold a top of a test piece for pulling testing. The pulling mechanism includes a worm gear motor, a drive screw set at an output end of the worm gear motor, a drive support rod, a tension sensor set at the other end of the drive support rod, an adjustable link block at one end connected to the tension sensor, and a pulling screw connected to the other end of the adjustable link block. The integrated machine has a simple structure, lightweight equipment, which can be handheld and easy to operate, thus do not need to have operating experience, thereby realizing core drilling and direct pulling test in one.

Abstract: Computer implemented method, systems, and computer program products include program code executing on a processor(s) obtain a first container comprising image layers, wherein the image layers include a base image layer and one or more image layers. The program code determines dependencies between the image layers. The program code obtains a request for an application where at least one image layer of the one or more image layers comprises features of the application. The program code identifies, based on the dependencies, at least one additional image layer related to the at least one image layer. The program code generates and deploys a second container, where image layers of the second container consist of the at least one image layer, the at least one additional image layer related to the at least one image layer, and the base layer.

Abstract: An anti-twist structure of voice coil motor includes a base, a lens housing, an elastic sheet, a magnet, and a yoke member. The lens housing has a margin wall, and the margin wall has a first protrusion and a contact portion. The elastic sheet has a hollowed slot, and the first protrusion pass through the hollowed slot, so that the elastic sheet is disposed on a portion of the margin wall and on the contact portion. The yoke member has an upper wall and a side wall. The side wall is disposed at one side of the upper wall and the side wall extends outward in a direction not parallel to the upper wall. The yoke member surrounds the lens housing, the elastic sheet, and the magnet. The lens housing has a deflectable angle relative to a horizontal reference line.

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

Abstract: There is disclosed a process for the production of crystalline L-carnitine, comprising the step of crystallizing L-carnitine in a mixed solvent comprised of cyclohexane and an alcohol, wherein the alcohol is selected from the group consisting n-propanol, isobutanol, butanol, and a mixture thereof.

Abstract: Secure container use is provided. The method generates respective user group permission identifications associated with image layer staging operations permissions assigned to different user groups as well as a list of the user group permission identifications. Responsive to a request from a user to perform an image layer staging operation, the method verifies whether the user has a user group permission identification in the list of the user group permission identifications. Responsive to verification that the user has a user group permission identification in the list of the user group permission identifications, the requested operation is executed. Responsive to determination that the user does not have a user group permission identification in the list of the user group permission identifications, the requested operation is denied.

Abstract: An image sensing device includes a germanium sensor within a semiconductor body and a metalens formed in the back side of the semiconductor body. The metalens is structured to focus infrared light on the germanium sensor and may have a lower profile than an equivalent microlens. Optionally, the metalens is combined with a microlens to achieve a desired focal length. The metalens, or the metalens in combination with a microlens, overcomes a manufacturing process limitation on the focal length of the microlens, which in turn eliminates the need for, or reduces the thickness of, a spacer between the microlens and the germanium sensor. Eliminating the spacer or reducing its thickness improves the angular response of the image sensing device.

Abstract: A deposition system provides a feature that may reduce costs of the sputtering process by increasing a target change interval. The deposition system provides an array of magnet members which generate a magnetic field and redirect the magnetic field based on target thickness measurement data. To adjust or redirect the magnetic field, at least one of the magnet members in the array tilts to focus on an area of the target where more target material remains than other areas. As a result, more ion, e.g., argon ion bombardment occurs on the area, creating more uniform erosion on the target surface.

Abstract: A detection method of polyamines is used to solve the problem that the conventional method is not suitable for detecting polyamines. The detection method of polyamines includes providing a sample with polyamines. The sample and a derivatization reagent with an isothiocyanate group are dissolved in a working solution to form a mixture, while a thiocarbamoylation reaction between the polyamine in the sample and the derivatization reagent is performed to obtain a derivatization solution with a thiourea derivative. The thiourea derivative in the derivatization solution is then detected to obtain a value of polyamine. With such performance, polyamine in the sample can be effectively detected. A diagnostic method of cancers is also disclosed.

Abstract: A transmission method for increasing a transmission throughput of a communication device includes: receiving a wireless signal, wherein the wireless signal includes a received packet; determining whether the received packet is from an overlapping basic service set (OBSS), and determining a length of a duration of a transmission opportunity (TXOP) according to information carried by the received packet; in response to the received packet being from the OBSS, performing packet transmission in a spatial reuse manner within the duration of the TXOP; and performing the packet transmission in a general manner after the duration of the TXOP ends; wherein a transmission power utilized in the spatial reuse manner is different from a transmission power utilized in the general manner, and a plurality of packets are transmitted in the spatial reuse manner within the duration of the TXOP.

Abstract: A sustained-release gel with insoluble salt as pH adjuster, and its preparation method and application are disclosed. The sustained-release gel is obtained by dissolving polymer in an aqueous solvent, followed by blending and compounding the alkaline inclusion and the insoluble salt crystalline powder. The insoluble salt is at solid state and thus has thus a large amount as the reservoir of the pH adjuster. The preparation is injectable, can be converted into gel state after being injected into organism, and realizes the sustained release of the inclusion at the injection site. The presence of the insoluble salt reduces the solubility of the inclusion in the gel by releasing the free salt sustainably and thus adjusting the pH inside the gel in a sustained manner. The burst release of the inclusion out of the gel is significantly alleviated.

Abstract: A method and semiconductor device including a substrate having one or more semiconductor devices. In some embodiments, the device further includes a first passivation layer disposed over the one or more semiconductor devices, and a metal-insulator-metal (MIM) capacitor structure formed over the first passivation layer. In some embodiments, the MIM capacitor structure includes a first conductor plate layer, an insulator layer on the first conductor plate layer, and a second conductor plate layer on the insulator layer. In some examples, the insulator layer includes a metal oxide sandwich structure.

Abstract: A semiconductor fabrication facility is provided. The semiconductor fabrication facility includes a processing tool and a transmission assembly. The transmission assembly is connected to the processing tool and comprises a number of transmission lines used to supply electric power or a fluid to the processing tool or remove the fluid or an exhaust gas from the processing tool. The transmission lines includes a first transmission line and a second transmission line. The first transmission line has a first temperature and the second transmission line has a second temperature. The second temperature is higher than the first temperature. The first transmission line and the second transmission line are arranged such that a thermal energy of the second transmission line is able to be transmitted to the first transmission line to change the first temperature of the first transmission line.

Abstract: A display device includes a substrate, a transistor, a first conductive feature, a conductive pad and a light-emitting device. The substrate has a first area. The transistor is located in the first area. The first conductive feature is located over the transistor and electrically connects a source/drain of the transistor. The first conductive feature includes a first protective layer and a first conductive layer. The first protective layer has a first thickness and at least includes titanium. The first conductive layer is located above the first protective layer, has a second thickness and includes aluminum. The second thickness is greater than the first thickness. The conductive pad is located on the first conductive feature and electrically connects the first conductive feature. The conductive pad at least includes nickel and gold. The light-emitting device is located on the conductive pad and electrically connects the conductive pad.

Abstract: There is disclosed an improved process for the racemization of (R)-?-ethyl-2-oxo-1-pyrrolidineacetic acid in a solution of alkali hydroxide. The process comprises heating a crystalline suspension of the racemic (RS)-?-ethyl-2-oxo-1-pyrrolidineacetic acid at a temperature from 100° C. to 250° C. to increase the yield and purity. The racemic (RS)-?-ethyl-2-oxo-1-pyrrolidineacetic acid is optically resolved into(S)-?-ethyl-2-oxo-1-pyrrolidineacetic acid and converted to levetiracetam.

Abstract: A GaN-based semiconductor device includes a substrate; a GaN channel layer disposed on the substrate; a AlGaN layer disposed on the GaN channel layer; a p-GaN gate layer disposed on the AlGaN layer; and a nitrogen-rich TiN hard mask layer disposed on the p-GaN gate layer. The nitrogen-rich TiN hard mask layer has a nitrogen-to-titanium (N/Ti) ratio that is greater than 1.0. A gate electrode layer is disposed on the nitrogen-rich TiN hard mask layer.

Abstract: The present disclosure relates to a method for configuring a priority level, a cloud platform, a system, a computing device, and a medium. The method for configuring a priority level for data on a cloud platform comprises determining the data type of received data; determining, according to the data type, a priority level specification used for describing a priority level of the received data; and calculating the priority level of the received data on the basis of the priority level specification of the received data.

Abstract: In some embodiments, the present disclosure relates to a method of forming an integrated chip including forming a ferroelectric layer over a bottom electrode layer, forming a top electrode layer over the ferroelectric layer, performing a first removal process to remove peripheral portions of the bottom electrode layer, the ferroelectric layer, and the top electrode layer, and performing a second removal process using a second etch that is selective to the bottom electrode layer and the top electrode layer to remove portions of the bottom electrode layer and the top electrode layer, so that after the second removal process the ferroelectric layer has a surface that protrudes past a surface of the bottom electrode layer and the top electrode layer.