Abstract: A semiconductor device includes a substrate and a gate structure. The gate structure is disposed on the substrate, and the gate structure includes a titanium nitride barrier layer a titanium aluminide layer, and a middle layer. The titanium aluminide layer is disposed on the titanium nitride barrier layer, and the middle layer is disposed between the titanium aluminide layer and the titanium nitride barrier layer. The middle layer is directly connected with the titanium aluminide layer and the titanium nitride barrier layer, and the middle layer includes titanium and nitrogen. A concentration of nitrogen in the middle layer is gradually decreased in a vertical direction towards an interface between the middle layer and the titanium aluminide layer.

Abstract: Disclosed herein is a probiotic composition that includes Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9, which are deposited at the China Center for Type Culture Collection (CCTCC) respectively under accession numbers CCTCC M 2011127, CCTCC M 2011128, and CCTCC M 2014588. A number ratio of Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9 ranges from 1:0.1:0.1 to 1:1:8. Also disclosed herein is use of the probiotic composition for alleviating type 1 diabetes mellitus (T1DM).

Abstract: An optical lens assembly includes at least one optical element. At least one of the at least one optical element includes a multi-layer coating membrane, and the multi-layer coating membrane is formed by alternately stacking high refractive index layers and low refractive index layers. The multi-layer coating membrane is a dual-bandpass filtering membrane.

Abstract: The present disclosure provides a transformer module and a power module, wherein the transformer module comprises: a magnetic core, where a first insulating layer and a second wiring layer are sequentially disposed on the magnetic core from inside to outside; a first metal winding, wound around the magnetic core and comprising a first winding segment formed in the first wiring layer and a second winding segment formed in the second wiring layer; and a second metal winding, wound around the magnetic core and comprising a third winding segment formed in the first wiring layer and a fourth winding segment formed in the second wiring; where at least part of the first metal winding and the second metal winding are wound around the magnetic core in a foil structure.

Abstract: The present disclosure provides a transformer module and a power module, wherein the transformer module comprises: a magnetic core, a first wiring layer, a first insulating layer and a second wiring layer, where the first wiring layer, the first insulating layer and the second wiring layer are sequentially disposed on the magnetic core from outside to inside; a first metal winding, formed in the first wiring layer, where at least part of the first metal winding is wound around the magnetic core in a foil structure; the first insulating layer, at least partially covered by the first metal winding; a second metal winding, formed in the second wiring layer and wound around the magnetic core, where the second metal winding is at least partially covered by the first insulating layer, and at least partially covered by the first metal winding.

Abstract: A shiftable image sensor module includes an image sensor and a shiftable circuit element. The shiftable circuit element includes a movable portion, a fixed portion, an elastic connecting portion and a conducting wire portion. The image sensor is disposed on the movable portion. The fixed portion is disposed around the movable portion. The elastic connecting portion is connected to the movable portion and the fixed portion. The conducting wire portion includes a plurality of conducting wire units, and each of the conducting wire units is electrically connected from the fixed portion to the image sensor. Each of the conducting wire units includes at least one conductor line, and the conductor line includes an air insulation layer located on an outer surface of the conductor line.

Abstract: The present disclosure provides a manufacturing process of a metal winding, where the manufacturing process includes: cutting a first metal copper foil to form a connector and a pin; performing insulation processing on a surface of at least one of the first metal copper foil and a second metal copper foil; bending the first metal copper foil to form a first metal winding to cover on a magnetic core; and covering the second metal copper foil at least partially on a surface of the first metal copper foil to form a second metal winding, and a pin of the first metal winding passes through the second metal winding.

Abstract: A slide rail assembly includes a first rail, a second rail, a plurality of working members and a damping module. The second rail and the first rail are movable relative to each other. The plurality of working members are arranged on the first rail. The damping module is arranged on the second rail. When the second rail is moved relative to the first rail from a predetermined position along a direction, one of the plurality of working members is configured to interact with the damping module in order to provide damping effect. When the second rail is further moved relative to the first rail along the direction, another one of the plurality of working members is configured to interact with the damping module in order to provide damping effect.

Abstract: A method of implementing autonomous emergency braking (AEB) for advanced driver-assistance systems (ADAS), the method includes receiving one or more first inputs and identifying one or more targets external to a host vehicle based on the one or more first inputs. The method further includes receiving one or more second inputs related to a turning status of the host vehicle and detecting a U-turn state associated with the host vehicle based on the one or more second inputs. The AEB algorithm may be modified in response to the detected U-turn state, wherein the AEB algorithm initiates an AEB event as necessary to avoid collisions with the one or more identified targets.

Abstract: The present disclosure provides an image sensor and control method thereof. The image sensor includes a first transparent conductive layer, a second conductive layer, an optical sensor and a semiconductor substrate. The optical sensor is arranged between the first transparent conductive layer and the second conductive layer, and includes a photoelectric conversion layer, wherein the photoelectric conversion layer has a thickness ranging from 500 to 10000 nm, and the optical sensor has a plurality of absorption spectrum ranges. The semiconductor substrate is below the second conductive layer.

Abstract: An optical measurement system measuring optical parameters of an object is provided. The object includes at least two light-transmitting layers. The optical measurement system includes a light source module, an image capture module, and a controller. The light source module emits at least two measurement light beams toward the object. The measurement light beams are respectively incident on the object at different angles. The image capture module receives light spots formed on a sensing surface of the image capture module by at least two first light beams after the measurement light beams are reflected by the object and at least two second light beams after the measurement light beams are refracted and reflected between the object. The controller is electrically connected to the image capture module to obtain positions of the light spots. The controller calculates the optical parameters of the object according to the positions of the light spots.

Abstract: An image sensor includes an image sensor die, a light transmitting element, at least one anti-reflection coating and at least one anti-reflection structure. The image sensor die includes a photoelectric conversion layer and a micro lens layer. The micro lens layer is disposed above the photoelectric conversion layer for converging the light onto the photoelectric conversion layer. The light transmitting element is disposed above the micro lens layer, and a gap is formed between the light transmitting element and the micro lens layer, the light passes through the light transmitting element and then travels into the image sensor. The anti-reflection coating is at least disposed on an upper surface of the light transmitting element. The anti-reflection structure is disposed on at least one of a lower surface of the light transmitting element and the micro lens layer.

Abstract: A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has a sub-layer made of a nitride-based semiconductor material including Al, and having an energy band gap greater than that of said electron-blocking layer. The P-type electron-blocking layer is made of a nitride-based semiconductor material including Al, and has an energy band gap greater than that of the P-type cladding layer.

Abstract: An imaging lens assembly includes a first optical element and a low-reflection layer. The first optical element has a central opening, and includes a first surface, a second surface and a first outer diameter surface. The first outer diameter surface is connected to the first surface and the second surface. The low-reflection layer is located on at least one of the first surface and the second surface, and includes a carbon black layer, a nano-microstructure and a coating layer. The nano-microstructure is directly contacted with and connected to the carbon black layer, and the nano-microstructure is farther from the first optical element than the carbon black layer from the first optical element. The coating layer is directly contacted with and connected to the nano-microstructure, and the coating layer is farther from the first optical element than the nano-microstructure from the first optical element.

Abstract: A spectrometer includes a plurality of photodetectors, an anti-reflection layer, a grating layer, a distant layer, and a collimator. The anti-reflection layer is disposed on the plurality of photodetectors. The grating layer is disposed above the anti-reflection layer and includes a plurality of grating structures to spread a light into a spectrum to the plurality of photodetectors through the distant layer. The distant layer continuously extends from the grating layer to the anti-reflection layer, the distant layer has a thickness in a range from 400 ?m to 2000 ?m, and a refractive index of the grating layer is greater than a refractive index of the distant layer. The collimator is disposed above the grating layer, in which the collimator is configured to confine an incident angle of the light from a first micro-lens.

Abstract: The present disclosure provides a transformer module and a power module, wherein the transformer module comprises: a magnetic core, where a first insulating layer and a second wiring layer are sequentially disposed on the magnetic core from inside to outside; a first metal winding, wound around the magnetic core in a foil structure, and comprising a first winding segment formed in the first wiring layer and a second winding segment formed in the second wiring layer; and a second metal winding, wound around the magnetic core in a foil structure, comprising a third winding segment formed in the first wiring layer and a fourth winding segment formed in the second wiring.

Abstract: Energy-collecting display modules are disclosed. The modules include a base substrate with a plurality of sub-pixels, which are laid out in a substantially regular sub-pixel pattern. The sub-pixels are dispersed along the base substrate with sub-pixel spacing regions between individual sub-pixels. The modules also include a photovoltaic region disposed within the sub-pixel spacing regions such that the photovoltaic region minimally obscures a subpixel viewing cone region.

Abstract: An electronic device including a pixel array structure, a redistribution structure, and a plurality of conductive via structures is provided. The pixel array structure includes a plurality of signal lines. The redistribution structure overlaps the pixel array structure and includes a plurality of conductive lines. The conductive via structures electrically connect the signal lines of the pixel array structure and the conductive lines of the redistribution structure. At least one of the conductive via structures shares at least one conductive layer with the pixel array structure.

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.