Abstract: A vertical cavity surface emitting laser (VCSEL) with an integrated phase shift mask for use in an optical pickup head for high density optical storage applications and a method of fabrication. The VCSEL is capable of emitting a power output of at least 10 mW. The phase shift mask is integrated with the VCSEL to allow for a 180.degree. shift in light emitted therethrough, thereby creating a reduced focal spot size for high density data write applications. The VCSEL with integrated phase shift mask is utilized in an optical pickup head capable of high density read and write applications for both CDs and DVDs.

Abstract: A VCSEL for high power operation and method of fabrication including a substrate element, a heat dissipation layer disposed on the substrate element, a first mirror stack, an active region lattice matched to a surface of the first mirror stack, and a second mirror stack lattice matched to a surface of the active region. An electrical contact is coupled to a surface of the active region and an electrical contact is positioned on another surface of the active region. The VCSEL is fabricated initially as two wafer structures each including a heat dissipation layer. The two wafer structures are flip mounted and the two heat dissipation layers are fused together to form a single heat dissipation layer. The structure is then selectively etched to remove a substrate element onto which the first wafer structure was formed.

Abstract: A semiconductor laser package including a laser chip mounted to an uppermost surface of a leadframe, and a molded structure at least partially encapsulating the laser chip. The laser chip composed of a vertical cavity surface emitting laser and an optional photodetector. The vertical cavity surface emitting laser generating an emission along a path. The molded structure including an optical element positioned a specific distance from an emission aperture of the vertical cavity surface emitting laser. The laser chip and the optical element mounted in precise z-axis alignment from the emission aperture of the vertical cavity surface emitting laser utilizing the uppermost surface of the leadframe as a dimensional reference point.

Abstract: Dual wavelength monolithically integrated VCSELs and a method of fabrication for emitting a short wavelength light and a long wavelength light including a first mirror stack lattice matched to the surface of a substrate. A short wavelength VCSEL is fabricated and masked during the formation of a long wavelength VCSEL. Each VCSEL further including mirror pairs in a AlAs/AlGaAs material system, an active region lattice matched to a surface of the first mirror stack, and a second mirror stack lattice matched to a surface of the active region and capable of emitting either a short wavelength light or a long wavelength light, dependent upon design parameters. Electrical contacts are coupled to the active regions of the monolithically integrated short wavelength VCSEL and the long wavelength VCSEL. The dual wavelength monolithically integrated VCSELs fabricated as a semiconductor laser chip capable of read/write applications for both CDs and DVDs.

Abstract: An apparatus for changing the phase of an optical storage medium changeable between a reflective phase and a dispersive phase. The apparatus including a quasi-multimode vertical cavity surface emitting laser constructed to provide a laser beam in a square shaped mode, to be directed onto the storage medium.

Abstract: A VCSEL for emitting long wavelength light including a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaAs active region with an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure having a quantum well including one of Germanium and Nitrogen, and a second mirror stack lattice matched to the second cladding region and having mirror pairs in a GaAs/AlGaAs material system.

Abstract: A semiconductor laser package and method of fabrication including a vertical cavity surface emitting laser and a power monitoring system, such as a photodetector mounted on a mounting base. An optical element, such as a beam splitter, formed integral with the mounting base or as a separate element positioned on the mounting base in optical alignment with an emission generated by the vertical cavity surface emitting laser. The optical element characterized by reflecting a portion of the emission in the direction of the photodetector and allowing a portion of the emission to pass therethrough. An overmolded housing is positioned on the mounting base to enclose the vertical cavity surface emitting laser, the photodetector and the optical element.

Abstract: A semiconductive substrate (101) with a surface (102) having a first stack of distributed Bragg reflectors (109) disposed on the surface (102) of the semiconductive substrate (101) that has dot patterned features (252 and 354). A first cladding region (113) is disposed on the first stack of distributed Bragg reflectors (109). An active area (117) is disposed on the first cladding region (113) with a second cladding region (123) disposed on the active area (117). A second stack of distributed Bragg reflectors (127) is disposed on the second cladding region (123). The dot patterned features produce an offset in the stacks of reflectors and a portion of the second stack of distributed Bragg reflectors is oxidized, using the offset, to limit the current path.

Abstract: A semiconductor laser package including a mounting structure at least partially encapsulating a vertical cavity surface emitting laser and a photodetector. The vertical cavity surface emitting laser generating an emission along a path. The photodetector optically positioned and/or integrally formed with the vertical cavity surface emitting laser to receive a portion of the emission. An optical element is optionally positioned in the path, mounted on the mounting structure utilizing a snap-fit connection, a threaded or adhesive mounting. The mounting structure and optical element are fabricated to allow for proper z-axis alignment of the optical element relative to the laser emission aperture.

Abstract: An ultraviolet/blue/green vertical cavity surface emitting laser (VCSEL) for use in high density data storage that includes the fabrication of a VCSEL structure on a metallic single crystal substrate. The metallic single crystal substrate is utilized as a back reflecting mirror that in conjunction with an aluminum gallium nitride/gallium nitride distributed Bragg reflector serves to increase the overall reflectance of the VCSEL device. The metallic substrate is fabricated of a material such as nickel aluminum, thereby achieving an improved lattice match to the included III-nitride materials.

Abstract: A first stack (112) of distributed Bragg reflectors, a first cladding region (114) disposed on the first stack of distributed Bragg reflectors (112) and including a defect inhibition layer (117) an active area (122) disposed on the first cladding region (114), a second cladding region (132) disposed on the active area (122) and including a defective inhibition layer (136), and a second stack (140) of distributed Bragg reflectors disposed on the second cladding region (132). The defect inhibition layers (117, 136) substantially prevent defects in the active area (122).

Abstract: A longwavelength vertical cavity surface emitting laser (VCSEL) for use in optical telecommunications and method of fabrication that includes the fabrication of an active VCSEL structure on a supporting substrate and the fabrication of a highly reflective DBR mirror structure on a silicon substrate. The DBR mirror structure includes alternating layers of a silicon oxide material and a silicon material fabricated utilizing epitaxially growth techniques and/or wafer bonding using SOI wafer fusion technology. During fabrication of the final VCSEL device, the Si/SiO.sub.2 DBR mirror structure is wafer bonded to the active VCSEL structure. The active VCSEL structure supporting substrate is selectively removed, to enable positioning of a second DBR mirror stack. The final VCSEL device characterized by emitting infra-red light.

Abstract: An integrated vertical cavity surface emitting laser (VCSEL) pair for use in an optical pickup head for high density optical storage applications and a method of fabrication. The VCSEL pair includes a high power VCSEL capable of emitting a power output of at least 15 mW and a low power VCSEL capable of emitting a power output in a range of 1-4 mW. A phase shift mask is integrated with the high power VCSEL to allow for a 180.degree. shift in light emitted therethrough, thereby creating a reduced focal spot size for high density data write applications. The low power VCSEL emission is focused into a Gaussian beam profile for data read applications. The integrated VCSEL pair is utilized in an optical pickup head capable of high density read and write applications for both CDs and DVDs.

Abstract: A near IR VCSEL including a mirror stack positioned on a substrate, formed of a plurality of pairs of relatively high and low index of refraction layers a second mirror stack formed of a plurality of pairs of relatively high and low index of refraction layers, an active region sandwiched between the first stack and the second stack, the active region being formed of active layers of GaInAsP having barrier layers of GaAlAs sandwiched therebetween.

Abstract: An integrated electro-optical package including a dual sided opto-electronic device, composed of a substrate with an array of light emitting devices (LEDs) formed on a first major surface thereof, and at least one vertical cavity surface emitting laser formed on an opposed second major surface of the substrate. A mounting structure formed so as to allow for the mounting of the dual sided opto-electronic device on the interior major surfaces, and further having electrical conductors for cooperating with the LEDs and VCSEL of the opto-electronic device. A driver substrate having electrical connections for interfacing with the mounting structure and the dual sided opto-electronic device. A plurality of driver circuits connected to the mounting structure and dual sided opto-electronic device through connection pads formed on the driver substrate.

Abstract: A VCSEL for emitting long wavelength light including a first mirror stack with mirror pairs in a GaAs/AlGaAs material system lattice matched to a GaTlP active region with an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure having a quantum well, and a second mirror stack lattice matched to the second cladding region and having mirror pairs in a GaAs/AlGaAs material system.

Abstract: A stack (103) of distributed Bragg reflectors is disposed on the surface (105) of a semiconductor substrate (102). The stack (103) includes a plurality of alternating layers of material having alternating refractive indexes with the stack (103) having a first dopant type. A first cladding region (104) is disposed on the stack (103) with an active area (106) disposed on the first cladding region (104). The active area (106) includes layers of indium aluminum gallium phosphide, indium gallium arsenide phosphide, and indium aluminum gallium phosphide. A second cladding region (107) is disposed on the active area (106) with a stack (108) of distributed Bragg reflectors disposed on cladding region (107). A contact region (109) is disposed on the stack (108).

Abstract: An optical smart card (10) including a microchip (14) having information stored thereon, an optical holographic sensor pad (16) capable of detecting and collecting light beams emitted from a remote reader/transmitter (52), a light source (18) capable of emitting dataelectronic information contained on the microchip (14) back to the remote reader/transmitter (52) and electronics (20) connected to the sensor pad (16), the light source (18) and the microchip (14).

Abstract: A power monitoring system including a vertical cavity surface emitting laser generating an emission. A beam splitter optically positioned to receive the emission and split the emission into a first portion and a second portion. A monitor optically positioned to receive the first portion of the emission. An output of the monitor is used to control emissions of the vertical cavity surface emitting lasers.

Abstract: An NDR diode (103) having a first electrical contact (105) and second electrical contact (111) is formed. A laser diode (113) having a third electrical contact and a fourth electrical contact is formed. The second electrical contact (111) of the negative differential resistance diode (103) is electrically coupled with the third.