Abstract: A semiconductive substrate (101) with a surface (102) having a first stack of distributed Bragg reflectors (109) disposed on the surface (102) of the semiconductive substrate (101). A first transition region (140) is disposed on the first stack of distributed Bragg reflectors (109) with a first cladding region (113) being disposed on the first transition region (140). An active area (117) is disposed on the first cladding region (113) with a second cladding region (123) being disposed on the active area (117). A second transition region (145) having a layer (255) of aluminum arsenide is disposed on the second cladding region (123) with a second stack of distributed Bragg reflectors (127) being disposed on the second transition region (145).

Abstract: An optical pick-up head for reading information from a data storage medium, the pick-up head including a VCSEL for emitting a beam of light with a focusing element for directing the beam of light onto the data storage medium and a light receiving element for receiving light reflected from the data storage medium and tracking element for positioning the beam.

Abstract: A vertical cavity surface emitting laser (VCSEL) having a first and a second mirror stack and an active region is formed utilizing epitaxial layer growth techniques. A lateral photodetector is integrally formed in the epitaxial growth layers, thereby providing for a VCSEL with laterally integrated photodetector. An isolation region is formed in the epitaxial growth layers between the VCSEL and the photodetector thereby isolating the VCSEL and the lateral photodetector. The integrated VCSEL and lateral photodetector capable of monitoring reflected laser emission, thus laser power output of the VCSEL and employing feedback to maintain a specific laser power output level, thereby capable of automatic power control (APC).

Abstract: A power monitoring system including a first substrate having a first vertical cavity surface emitting laser and a second vertical cavity surface emitting laser formed thereon and being generally identical. A second substrate having a photodiode formed thereon. The second substrate is flip chip mounted on the first substrate with the photodiode in optical alignment the second vertical cavity surface emitting laser. The output of the photodiode is used to control emissions of the first and second vertical cavity surface emitting lasers.

Abstract: A VCSEL (113) having a first and a second stack of distributed Bragg reflectors (120, 116) and an active region (118) defining a light generating and emitting path. A layer (104) of semiconductor material is formed on the second stack (116) so as to intersect the light path and a first electrode (106) and a second electrode (108) are disposed on the layer (104) to form a metal-semiconductor-metal photodetector (102). The metal-semiconductor-metal photodetector (102) absorbs some of the light emitted by the VCSEL (113) and provides an indication of the light output intensity, which indication may be used to control the VCSEL (113).

Abstract: A switchable lens includes first and second optically transparent substrates, a first electrically conductive, optically transparent contact film positioned on a surface of the first optically transparent substrate, a second electrically conductive, optically transparent contact film positioned on a surface of the second optically transparent substrate, and phase modulating material sandwiched between the first and second electrically conductive, optically transparent contact films. The phase modulating material has a lens function stored therein which is temporarily erasable by a potential applied between the first and second electrically conductive, optically transparent contact films, the phase modulating material thereby being capable of modulating light passing therethrough.

Abstract: A vertical cavity surface emitting laser for emitting visible light, including a first mirror stack having a first portion of a first epitaxially grown material system and a second portion of a second epitaxially grown material system, an active region disposed on the first mirror stack, and a second mirror stack disposed on the active region.

Abstract: A VCSEL (113) having first and second stacks of DBRs (120, 116) and an active region sandwiched therebetween (118) is formed. A PIN photo-detector is integrated onto the VCSEL by positioning it on the second stack in the light path. The PIN photo detector includes a first doped region (104), a second undoped (intrinsic) region (106), and a third doped region (108). A first conductive layer (134) is provided in contact with the second stack and the first region and a second conductive layer is provided in contact with the third region.

Abstract: A VCSEL for emitting long wavelength light including a first mirror stack lattice matched to the surface of a substrate and including mirror pairs in a II-VI material system, an InP based active region lattice matched to a surface of the first mirror stack, and a second mirror stack lattice matched to a surface of the active region and including mirror pairs in a II-VI material system. An electrical contact is coupled to a surface of the active region and an electrical contact is positioned on another surface of the active region. In a specific embodiment the II-VI material system includes ZnCdSe/MgZnCdSe.

Abstract: A hybrid mirror structure for a visible emitting VCSEL including a first distributed Bragg reflector disposed on a substrate and including first pairs of alternating layers including an oxidized aluminum material and second pairs of alternating layers. A first cladding region disposed on the first distributed Bragg reflector, an active region disposed on the first cladding region, and a second cladding region disposed on the active region, and a second distributed Bragg reflector disposed on the second cladding region. In the first distributed Bragg reflector, each pair of alternating layers includes a layer containing oxidized aluminum. Alternate layers contain AlAs which is oxidized to decrease the index of refraction to a range of approximately 1.3 to 1.7.

Abstract: A passivated vertical cavity surface emitting laser including a first stack of distributed Bragg reflectors disposed on the surface of a semiconductor substrate, a first cladding region disposed on the first stack, an active region disposed on the first cladding region, a second cladding region disposed on the active region, and a second stack of distributed Bragg reflectors disposed on the second cladding region. A passivation layer having an optical thickness of an integral multiple of approximately one half of the wavelength of emitted light is disposed on the vertical cavity surface emitting laser.

Abstract: An integrated electro-optical package including a dual sided opto-electronic device, composed of a substrate with an array of light emitting devices (LEDs) formed on a first major surface thereof, and at least one vertical cavity surface emitting laser formed on an opposed second major surface of the substrate. A mounting structure formed so as to allow for the mounting of the dual sided opto-electronic device on the interior major surfaces, and further having electrical conductors for cooperating with the LEDs and VCSEL of the opto-electronic device. A driver substrate having electrical connections for interfacing with the mounting structure and the dual sided opto-electronic device. A plurality of driver circuits connected to the mounting structure and dual sided opto-electronic device through connection pads formed on the driver substrate.

Abstract: An article and method for making a vertical cavity surface emitting laser (101) is provided. The vertical cavity surface emitting laser includes a semiconductor substrate (102) having a first surface (105) on which a first set of distributed Bragg reflectors (103) are deposited. The distributed Bragg reflectors (103) are made of alternating layers of indium aluminum gallium phosphide and aluminum arsenide. An active region (106) is disposed on the distributed Bragg reflectors with a subsequent of and active region (106) and another cladding region (107). Another distributed Bragg reflector (103) is deposited on cladding region (107).

Abstract: An optical module (100) having a first side (103) and a second side (104), a plurality of input optical ports (144) and an output optical port (120) is formed. The input optical ports (144) are disposed on the first side (103) with the output optical port (156) being disposed on the second side (104) of the optical module (100). A plurality of bifurcated waveguides (118) are disposed in the optical module, the bifurcated waveguides (118) coalesce light from the plurality of input optical ports (144) into a single high power output at the output optical port (120).