Patents by Inventor Wenbin Zhou

Wenbin Zhou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220077171
    Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a memory stack having interleaved a plurality of conductor layers and a plurality of insulating layers, a plurality of channel structures extending in the memory stack, and a source structure extending in the memory stack. The source structure includes a plurality of source contacts each in a respective insulating structure. Two adjacent source contacts are conductively connected to one another by a connection layer, the connection layer includes a pair of first portions being over the two adjacent ones of the plurality of source contacts and a second portion between the pair of first portions. A support structure is between the two adjacent source contacts. The support structure includes a cut structure over interleaved a plurality of conductor portions and a plurality of insulating portions.
    Type: Application
    Filed: November 16, 2021
    Publication date: March 10, 2022
    Inventors: Wenxiang Xu, Wei Xu, Pan Huang, Ping Yan, Zongliang Huo, Wenbin Zhou, Ji Xia
  • Patent number: 11271007
    Abstract: Embodiments of a three-dimensional (3D) memory device and fabrication methods are disclosed. In some embodiments, the method for forming the 3D memory device includes forming an alternating dielectric stack on a substrate, and forming channel holes that penetrate the alternating dielectric stack and expose at least a portion of the substrate. The method further includes forming top select gate openings that penetrate vertically an upper portion of the alternating dielectric stack and extend laterally. The method also includes forming slit openings parallel to the top select gate openings, wherein the slit openings penetrate vertically the alternating dielectric stack. The method also includes replacing the alternating dielectric stack with a film stack of alternating conductive and dielectric layers, forming top select gate cuts in the top select gate openings, and forming slit structures in the slit openings.
    Type: Grant
    Filed: December 30, 2019
    Date of Patent: March 8, 2022
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Ji Xia, Zongliang Huo, Wenbin Zhou, Wei Xu, Pan Huang, Wenxiang Xu
  • Patent number: 11257831
    Abstract: Embodiments of three-dimensional (3D) memory devices and fabricating methods thereof are disclosed. The method includes: forming an alternating dielectric stack on a substrate; forming a top selective gate cut and two structure strengthen plugs in an upper portion of the alternating dielectric stack, wherein each structure strengthen plug has a narrow support body and two enlarged connecting portions; forming a plurality of channel structures in the alternating dielectric stack; forming a plurality of gate line silts in the alternating dielectric stack, wherein each gate line slit exposes a sidewall of one enlarged connecting portion of a corresponding structure strengthen plug; transforming the alternating dielectric stack into an alternating conductive/dielectric stack; and forming a gate line slit structure in each gate line slit including an enlarged end portion connected to one enlarged connecting portion of a corresponding structure strengthen plug.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: February 22, 2022
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Wenxiang Xu, Haohao Yang, Pan Huang, Ping Yan, Zongliang Huo, Wenbin Zhou, Wei Xu
  • Patent number: 11251195
    Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, the 3D memory device includes a stack structure. The stack structure includes a plurality of conductor layers and a plurality of insulating layers interleaved over a substrate. The plurality of conductor layers include a pair of top select conductor layers divided by a first top select structure and a pair of bottom select conductor layers divided by a bottom select structure. The first top select structure and the bottom select structure extend along a horizontal direction and are aligned along a vertical direction. A plurality of channel structures extend along a vertical direction and into the substrate and are distributed on both sides of the top select structure and the bottom select structure.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: February 15, 2022
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Zongliang Huo, Haohao Yang, Wei Xu, Ping Yan, Pan Huang, Wenbin Zhou
  • Publication number: 20220028890
    Abstract: Embodiments of a three-dimensional (3D) memory device and fabrication methods are disclosed. In some embodiments, the method for forming the 3D memory device includes forming an alternating dielectric stack on a substrate, and forming channel holes that penetrate the alternating dielectric stack and expose at least a portion of the substrate. The method further includes forming top select gate openings that penetrate vertically an upper portion of the alternating dielectric stack and extend laterally. The method also includes forming slit openings parallel to the top select gate openings, wherein the slit openings penetrate vertically the alternating dielectric stack. The method also includes replacing the alternating dielectric stack with a film stack of alternating conductive and dielectric layers, forming top select gate cuts in the top select gate openings, and forming slit structures in the slit openings.
    Type: Application
    Filed: October 7, 2021
    Publication date: January 27, 2022
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Ji XIA, Zongliang HUO, Wenbin ZHOU, Wei XU, Pan HUANG, Wenxiang XU
  • Patent number: 11211394
    Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a memory stack, a plurality of channel structures, and a source structure. The memory stack is over a substrate and includes interleaved a plurality of conductor layers and a plurality of insulating layers. The source structure includes a plurality of source contacts, and two adjacent ones of the plurality of source contacts are conductively connected to one another by a connection layer. A pair of first portions of the connection layer are over the two adjacent ones of the plurality of source contacts and a second portion of the connection layer being between the two adjacent ones of the plurality of source contacts. Top surfaces of the pair of first portions of the connection are coplanar with a top surface of the second portion.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: December 28, 2021
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Wenxiang Xu, Wei Xu, Pan Huang, Ping Yan, Zongliang Huo, Wenbin Zhou, Ji Xia
  • Patent number: 11183512
    Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a memory stack, a plurality of channel structures, a slit structure, and a source structure. The memory stack may be over a substrate and may include interleaved a plurality of conductor layers and a plurality of insulating layers extending laterally in the memory stack. The plurality of channel structures may extend vertically through the memory stack into the substrate. The slit structure may extend vertically and laterally in the memory stack and divide the plurality of memory cells into at least one memory block. The slit structure may include a plurality of protruding portions and a plurality of recessed portions arranged vertically along a sidewall of the slit structure.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: November 23, 2021
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Zongliang Huo, Haohao Yang, Wei Xu, Ping Yan, Pan Huang, Wenbin Zhou
  • Publication number: 20210353571
    Abstract: The present invention relates to novel compounds which are capable of inhibiting certain amine oxidase enzymes. These compounds are useful for treatment of a variety of indications, e.g., fibrosis, cancer and/or angiogenesis in human subjects as well as in pets and livestock. In addition, the present invention relates to pharmaceutical compositions containing these compounds, as well as various uses thereof.
    Type: Application
    Filed: August 2, 2019
    Publication date: November 18, 2021
    Inventors: Alison Dorothy FINDLAY, Craig Ivan TURNER, Mandar DEODHAR, Jonathan Stuart FOOT, Wolfgang JAROLIMEK, Wenbin ZHOU, Alberto BUSON, Angelique Elsa GRECO
  • Publication number: 20210296345
    Abstract: A method for forming a 3D memory device is disclosed. The method includes forming an alternating dielectric stack on a substrate. Then a plurality of channel structures and dummy channel structures vertically penetrating the alternating dielectric stack are formed, The channel structures are located in a core region, and the dummy channel structures are located in a staircase region. A gate line silt structure is formed vertically penetrating the alternating dielectric stack and laterally extending in a first direction. The gate line silt structure includes a narrow portion that has a reduced width along a second direction different from the first direction.
    Type: Application
    Filed: September 11, 2020
    Publication date: September 23, 2021
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Qingqing WANG, Wei XU, Wenbin ZHOU
  • Patent number: 11127757
    Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a memory stack, a plurality of channel structures, and a source structure. The memory stack is over a substrate and includes interleaved a plurality of conductor layers and a plurality of insulating layers. The plurality of channel structures extend vertically in the memory stack. The source structure extend in the memory stack. The source structure includes a plurality of source contacts each in a respective insulating structure, and two adjacent ones of the plurality of source contacts are conductively connected to one another.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: September 21, 2021
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Wenxiang Xu, Wei Xu, Pan Huang, Ping Yan, Zongliang Huo, Wenbin Zhou, Ji Xia
  • Patent number: 11114458
    Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, the 3D memory device includes a memory stack having interleaved a plurality of conductor layers and a plurality of insulating layers extending laterally in the memory stack. The 3D memory device also includes a plurality of channel structures extending vertically through the memory stack into the substrate. The 3D memory device further includes at least one slit structure extending vertically and laterally in the memory stack and dividing a plurality of memory cells into at least one memory block, the at least one slit structure each including a plurality of slit openings and a support structure between adjacent slit openings. The support structure may be in contact with adjacent memory blocks and contacting the substrate.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: September 7, 2021
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Zongliang Huo, Haohao Yang, Wei Xu, Ping Yan, Pan Huang, Wenbin Zhou
  • Patent number: 11101286
    Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a memory stack over a substrate, a plurality of channel structures, and a source structure. The memory stack includes interleaved a plurality of conductor layers and a plurality of insulating layers. The plurality of channel structures extend vertically in the memory stack. The source structure extend in the memory stack. The source structure includes a plurality of source contacts each in a respective insulating structure. At least two of the plurality of source contacts are in contact with and conductively connected to one another.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: August 24, 2021
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Pan Huang, Wei Xu, Ping Yan, Wenxiang Xu, Zongliang Huo, Wenbin Zhou, Ji Xia
  • Patent number: 11098045
    Abstract: The present invention relates to novel compounds which are capable of inhibiting certain amine oxidase enzymes. These compounds are useful for treatment of a variety of indications, e.g., fibrosis, cancer and/or angiogenesis in human subjects as well as in pets and livestock. In addition, the present invention relates to pharmaceutical compositions containing these compounds, as well as various uses thereof.
    Type: Grant
    Filed: June 11, 2020
    Date of Patent: August 24, 2021
    Assignee: Pharmaxis Ltd.
    Inventors: Alison Dorothy Findlay, Craig Ivan Turner, Mandar Deodhar, Jonathan Stuart Foot, Wolfgang Jarolimek, Wenbin Zhou, Alan Duncan Robertson
  • Patent number: 11094713
    Abstract: A three-dimensional (3D) memory device includes a memory stack over a substrate. The memory stack includes interleaved conductor layers and insulating layers. The 3D memory device also includes channel structures extending vertically in the memory stack. The 3D memory device further includes a source structure extending in the memory stack. The source structure includes first and second source contacts separated by a support structure. The source structure also includes an adhesion layer. At least a portion of the adhesion layer is between the first and second source contacts and conductively connects the first and second source contacts.
    Type: Grant
    Filed: November 20, 2019
    Date of Patent: August 17, 2021
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Qingqing Wang, Wei Xu, Pan Huang, Ping Yan, Zongliang Huo, Wenbin Zhou
  • Patent number: 11094712
    Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a stack structure and at least one source structure extending vertically and laterally and dividing the stack structure into a plurality of block regions. The stack structure may include a plurality of conductor layers and a plurality of insulating layers interleaved over a substrate. The at least one source structure includes at least one support structure extending along the vertical direction to the substrate, the at least one support structure being in contact with at least a sidewall of the respective source structure.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: August 17, 2021
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Zongliang Huo, Haohao Yang, Wei Xu, Ping Yan, Pan Huang, Wenbin Zhou
  • Publication number: 20210225866
    Abstract: A method for forming a three-dimensional (3D) memory device is disclosed. In some embodiments, the method includes forming an alternating dielectric stack on a substrate, and forming a plurality of channel holes penetrating the alternating dielectric stack vertically to expose at least a portion of the substrate. A first mask can be formed to cover the channel holes in a first area and expose the channel holes in a second area. The method also includes forming a recess in the alternating dielectric stack in the second area, followed by forming a second mask in the recess. The second mask covers the channel holes in the second area and exposes the channel holes in the first area. The memory film at bottom of each channel hole in the first area can therefore be removed, while the memory film in the second area can be protected by the second mask.
    Type: Application
    Filed: June 23, 2020
    Publication date: July 22, 2021
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Feng LU, Jing GAO, Wenbin ZHOU
  • Patent number: 11043565
    Abstract: A three-dimensional (3D) memory device includes a memory stack over a substrate. The memory stack includes interleaved a plurality of conductor layers and a plurality of insulating layers. The 3D memory device also includes a plurality of channel structures extending vertically in the memory stack. The 3D memory device further includes a source structure extending in the memory stack. The source structure includes a support structure dividing the source structure into first and second sections. The source structure also includes an adhesion layer. At least a portion of the adhesion layer extends through the support structure and conductively connects the first and second sections.
    Type: Grant
    Filed: November 20, 2019
    Date of Patent: June 22, 2021
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Zhengliang Xia, Pan Huang, Wei Xu, Ping Yan, Zongliang Huo, Wenbin Zhou
  • Publication number: 20210183878
    Abstract: Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a method for forming a 3D memory device includes the following operations. A cut structure is first formed in a stack structure. The stack structure includes interleaved initial sacrificial layers and initial insulating layers. A patterned cap material layer is formed over the stack structure. The patterned cap material layer includes an opening over the cut structure. Portions of the stack structure and the patterned cap material layer adjacent to the opening are removed to form a slit structure and an initial support structure. The initial support structure divides the slit structure into slit openings. Conductor portions are formed through the plurality of slit openings to form a support structure. A source contact is formed in each slit opening. A connection layer is formed over the source contact in each slit opening and over the support structure.
    Type: Application
    Filed: February 26, 2021
    Publication date: June 17, 2021
    Inventors: Wenxiang Xu, Wei Xu, Pan Huang, Ping Yan, Zongliang Huo, Wenbin Zhou, Ji Xia
  • Publication number: 20210167086
    Abstract: A method for forming a 3D memory device is provided. The method includes forming a dielectric stack including interleaved initial insulating layers and initial sacrificial layers over a substrate, and forming at least one slit structure extending vertically and laterally in the dielectric stack and dividing the dielectric stack into block regions. The at least one slit structure each includes slit openings exposing the substrate and an initial support structure between adjacent slit openings. Each block region may include interleaved insulating layers and sacrificial layers, and the initial support structure may include interleaved insulating portions and sacrificial portions. Each insulating portion and sacrificial portion may be in contact with respective insulating layers and sacrificial layers of a same level from adjacent block regions.
    Type: Application
    Filed: February 8, 2021
    Publication date: June 3, 2021
    Inventors: Zongliang Huo, Haohao Yang, Wei Xu, Ping Yan, Pan Huang, Wenbin Zhou
  • Publication number: 20210167076
    Abstract: Embodiments of three-dimensional (3D) memory devices and fabricating methods thereof are disclosed. The method includes: forming an alternating dielectric stack on a substrate; forming a top selective gate cut and two structure strengthen plugs in an upper portion of the alternating dielectric stack, wherein each structure strengthen plug has a narrow support body and two enlarged connecting portions; forming a plurality of channel structures in the alternating dielectric stack; forming a plurality of gate line silts in the alternating dielectric stack, wherein each gate line slit exposes a sidewall of one enlarged connecting portion of a corresponding structure strengthen plug; transforming the alternating dielectric stack into an alternating conductive/dielectric stack; and forming a gate line slit structure in each gate line slit including an enlarged end portion connected to one enlarged connecting portion of a corresponding structure strengthen plug.
    Type: Application
    Filed: February 21, 2020
    Publication date: June 3, 2021
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Wenxiang XU, Haohao YANG, Pan HUANG, Ping YAN, Zongliang HUO, Wenbin ZHOU, Wei XU