Abstract: Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.

Abstract: Systems and methods for reducing network cost in a hyper-converged infrastructure are disclosed. The network cost of workload pairs can be assessed. Migration of the workloads can be considered to reduce the network cost and improve the network efficiency of the hyper-converged infrastructure.

Abstract: Example methods are provided for configuring traffic flow monitoring in a virtualized computing environment. The method may comprise identifying a first logical entity and a second logical entity for which traffic flow monitoring is required and determining a span associated with the first logical entity and the second logical entity. The span may include a first host supporting the first logical entity and a second host supporting the second logical entity. The method may also comprise, based on the span, configuring the first host to monitor a first traffic flow travelling through the first logical entity at the first host, and the second host to monitor a second traffic flow travelling through the second logical entity at the second host.

Abstract: The disclosed techniques generally relate to devices and methods for generating cropped images in which one or more features of interest are preserved or emphasized. In one implementation, such features of interest may include facial features. In accordance with certain implementations, location and extent of such features may be identified and used in conjunction with information regarding display characteristics so as to generate cropped images preserving or emphasizing the feature of interest when displayed on a given device.

Abstract: Processing methods comprising etching a metal nitride layer with an etchant. The etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of improving the selectivity of etch processes are also disclosed.

Abstract: Methods for treating a substrate including: contacting a substrate having a top surface with a first self-assembled monolayer (SAM) precursor or a first small-molecule monolayer (SMM) precursor, a co-reactant, and a second SAM precursor or a second SMM precursor to form a first layer on the top surface. Selective deposition methods are also disclosed.

Abstract: Methods and apparatus for reducing and eliminating defects in tungsten film are disclosed herein. In the present disclosure, reducing or eliminating oxidation of a first surface of a tungsten film having a predetermined first thickness disposed upon a substrate and within a plurality of trenches is disclosed. The plurality of trenches include a predetermined depth, and a width of less than 20 nanometers. The predetermined first thickness of the tungsten film is substantially uniform throughout the plurality of trenches such that the predetermined first thickness of the tungsten film does not substantially change to a second thickness when the first surface is contacted with air or oxygen.

Abstract: According to embodiments of the present invention, an electrode is provided. The electrode includes silicon, tin, and a non-alloy of a transition metal. According to further embodiments of the present invention, a battery cell including the electrode and a battery arrangement having a plurality of battery cells are also provided. Methods of forming the electrode, the battery cell and the battery arrangement are also provided.

Abstract: Methods and apparatus for forming a semiconductor structure, including depositing a doping stack having a first surface atop a high-k dielectric layer, wherein the doping stack includes at least one first metal layer having a first surface, at least one second metal layer comprising a first aluminum dopant and a first surface, wherein the second metal layer is atop the first surface of the first metal layer, and at least one third metal layer atop the first surface of the second metal layer; depositing an anneal layer atop the first surface of the doping stack; annealing the structure to diffuse at least the first aluminum dopant into the high-k dielectric layer; removing the anneal layer; and depositing at least one work function layer atop the first surface of the doping stack.

Abstract: Example methods are provided for configuring traffic flow monitoring in a virtualized computing environment. The method may comprise identifying a first logical entity and a second logical entity for which traffic flow monitoring is required and determining a span associated with the first logical entity and the second logical entity. The span may include a first host supporting the first logical entity and a second host supporting the second logical entity. The method may also comprise, based on the span, configuring the first host to monitor a first traffic flow travelling through the first logical entity at the first host, and the second host to monitor a second traffic flow travelling through the second logical entity at the second host.

Abstract: The invention relates to drain cleaning compositions including relatively high concentrations of a hypochlorite oxidizing agent and a hydroxide (e.g., 4 to 12% and 2.5 to 10%, respectively. The composition further includes a surfactant (e.g., a surfactant blend, water, and exhibits a very high pH (e.g., at least 13). The composition is monophasic, even at high oxidizing and hydroxide concentrations. The surfactant may include a blend of an uncharged surfactant (e.g., an amphoteric surfactant or nonionic surfactant) and a charged surfactant (e.g., anionic, cationic, or a surfactant that becomes so under the high pH conditions of the composition). The ratio of charged to uncharged surfactant may be at least 1:10, e.g., from 1:10 to about 1:50.

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

Abstract: Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.

Abstract: A cleaning composition for sanitizing and/or disinfecting hard surfaces, comprising: a cationic biocide, surfactant and low levels of VOC solvents. The cleaning composition is adapted to clean a variety of hard surfaces without leaving behind a visible residue and creates low levels of streaking and filming on the treated surface. The cleaning composition contains less than 5% by weight of VOCs. The cleaning composition may be used alone as a liquid or spray formulation or in combination with a substrate, for example, a pre-loaded cleaning wipe.

Abstract: Processing methods comprising oxidizing a metal nitride film to form a metal oxynitride layer and etching the metal oxynitride layer with a metal halide etchant. The metal halide etchant can be, for example, WCl5, WOCl4 or TaCl5. Methods of filling a trench with a seam-free gapfill are also described. A metal nitride film is deposited in the trench to form a seam and pinch-off an opening of the trench. The pinched-off opening is subjected to a directional oxidizing plasma and a metal halide etchant to open the pinched-off top and allow access to the seam.

Abstract: The present disclosure discloses a transfer printing plate assembly, which includes a transfer printing plate for transfer printing of aligning agent, and a printing cylinder for fixing the transfer printing plate. The transfer printing plate includes a first side, a second side opposite to the first side, and a first connection element at each of the first side and the second side. The printing cylinder includes a second connection element for engaging with the first connection element to prevent the transfer printing plate from shrinking in an axial direction of the printing cylinder when the transfer printing plate is fixed to the printing cylinder.

Abstract: A cleaning composition for sanitizing and/or disinfecting hard surfaces, comprising: a cationic biocide, surfactant and low levels of VOC solvents. The cleaning composition is adapted to clean a variety of hard surfaces without leaving behind a visible residue and creates low levels of streaking and filming on the treated surface. The cleaning composition contains less than 5% by weight of VOCs. The cleaning composition may be used alone as a liquid or spray formulation or in combination with a substrate, for example, a pre-loaded cleaning wipe.

Abstract: An example method is provided for a host to perform load balancing for multiple network interface controllers (NICs) configured as a team. The method may comprise the host detecting egress packets from a virtualized computing instance supported by the host for transmission to a destination via the team. The method may also comprise the host selecting one of the multiple NICs from the team based on load balancing weights associated with the respective multiple NICs. Each load balancing weight may be assigned based on a network speed supported by the associated NIC, and different load balancing weights are indicative of different network speeds among the multiple NICs in the team. The method may further comprise the host sending, via the selected one of the multiple NICs, the egress packets to the destination.

Abstract: A microelectromechanical system (MEMS) bond release structure is provided for manufacturing of three-dimensional integrated circuit (3D IC) devices with two or more tiers. The MEMS bond release structure includes a MEMS sacrificial release layer which may have a pillar or post structure, or alternatively, a continuous sacrificial layer for bonding and release.

Abstract: A video recommending method, including: obtaining videos, the video including long videos and short videos; obtaining a subset of the long videos, of which video attribute values are greater than corresponding attribute thresholds; obtaining a watching record of a user, and obtaining similarities between the short videos and videos in the watching record, to extract a preset quantity of short videos having highest similarities; and recommending the subset of the long videos, of which video attribute values are greater than corresponding attribute thresholds, to the user, and/or recommending the preset quantity of short videos having highest similarities to the user.