Abstract: A configuration of multiple LED modules having a plurality of LED modules that each contain a carrier that has a first main area, a second main area and at least one semiconductor layer. The first main area has a planar configuration. The LED modules also include a plurality of LED semiconductor bodies that applied on the first main area of the carrier. In addition, the multiple LED modules include a common heat sink, where the carrier of the LED modules in each case are connected to the common heat sink on the second main area.

Abstract: A configuration of multiple LED modules having a plurality of LED modules that each contain a carrier that has a first main area, a second main area and at least one semiconductor layer. The first main area has a planar configuration. The LED modules also include a plurality of LED semiconductor bodies that applied on the first main area of the carrier. In addition, the multiple LED modules include a common heat sink, where the carrier of the LED modules in each case are connected to the common heat sink on the second main area.

Abstract: A configuration of multiple LED modules comprising a plurality of LED modules that each contain a carrier that has a first main area, a second main area and at least one semiconductor layer, wherein the first main area has a planar configuration. The LED modules also include a plurality of LED semiconductor bodies that applied on the first main area of the carrier. In addition, the multiple LED modules include a common heat sink, where the carrier of the LED modules in each case are connected to the common heat sink on the second main area.

Abstract: A lensless optical servo system (100) has an unfocused light source (102) and patterned photodetectors (104, 106, 108). The unfocused light is reflected by the markings on an LS-120 disk (40) and the reflected light carries the pattern of the markings the considerable distance in its far-field to the photodetectors (104, 106, 108). The convolution of this light pattern and a mating geometric pattern (110, 112, 114) on the photodetectors (104, 106, 108) causes the photodetectors to generate signals representing the position of the track on the disk. According to a presently preferred embodiment, a laser diode (102) and three detectors (104, 106, 108) are formed on the same silicon substrate (101). Sinusoidal metalization (110, 112, 114) is applied to the detectors (104, 106, 108) in the radial direction. The period of the sinusoidal metalization is two times the tracking pitch of the disk radially and tangentially.

Abstract: An LED module has a carrier, which contains a semiconductor layer and has a planar main area, on which LED semiconductor bodies are applied. Use is preferably made of LED semiconductor bodies which emit light of differing central wavelengths during operation, so that the LED module is suitable for generating mixed-color light, and in particular for generating white light.

Abstract: A radiation source has a field of semiconductor chips, which are disposed below a field of micro-lenses (8) disposed in a hexagonal lattice structure. The radiation source is distinguished by high radiation output and radiation density.

Abstract: A white light source has a light emission device, in particular an IR laser diode, whose emitted radiation beam is converted, in a nonlinear-optical element and a conversion element, into a radiation beam with wavelengths ?1, . . . ?n which can be perceived as white light and can have a higher power rating.

Abstract: A light-emitting power semiconductor device is placed on a metillic substrate structure with the formation of a good heat-transfer contact, in which a plastic protective body surrounds the power semiconductor device, leaving exposed a light exit region in the nature of a cap.

Abstract: In an optically pumpable surface-emitting semiconductor laser device with a vertical emitter with a radiation-generating active layer, at least one modulation radiation source for modulating the output power of the surface-emitting semiconductor device is provided. The modulation radiation source is formed by an edge-emitting semiconductor structure with an active layer, and which is disposed such that during operation it radiates into the radiation-generating active layer of the vertical emitter. This produces an easily modulatable surface-emitting laser source of high power and high beam quality. A pumping radiation source for optically pumping the active layer of the vertical emitter is preferably provided in the semiconductor laser device.

Abstract: A measuring arrangement for measuring product parameters of a component in the epitaxial layer (28) of a wafer comprises measuring probe (3) on whose contact side (23) a recess (24) is installed, into which an electrolyte can be poured. The electrolyte produces an electrical connection between a contact body (11), which is charged with a signal from a pulsed-current source, and the surface (22) of the wafer (2). A detector (16) serves for detecting the light which is emitted by the component.

Abstract: A semiconductor laser has a semiconductor body with first and second main areas, preferably each provided with a contact area, and also first and second mirror areas. An active layer and a current-carrying layer are formed between the main areas. The current-carrying layer has at least one strip-type resistance region, which runs transversely with respect to the resonator axis and whose sheet resistivity is increased at least in partial regions compared with the regions of the current-carrying layer that adjoin the resistance region.

Abstract: A lensless optical servo system (100) has an unfocused light source (102) and patterned photodetectors (104, 106, 108). The unfocused light is reflected by the markings on an LS-120 disk (40) and the reflected light carries the pattern of the markings the considerable distance in its far-field to the photodetectors (104, 106, 108). The convolution of this light pattern and a mating geometric pattern (110, 112, 114) on the photodetectors (104, 106, 108) causes the photodetectors to generate signals representing the position of the track on the disk. According to a presently preferred embodiment, a laser diode (102) and three detectors (104, 106, 108) are formed on the same silicon substrate (101). Sinusoidal metalization (110, 112, 114) is applied to the detectors (104, 106, 108) in the radial direction. The period of the sinusoidal metalization is two times the tracking pitch of the disk radially and tangentially.

Abstract: A lensless optical servo system has an unfocused light source and patterned photodetectors. The unfocused light is reflected by markings on a rotating disk and the reflected light carriers the pattern of the markings to the photodetectors. The convolution of this light pattern and a mating geometric pattern on the photodetectors causes the photodetectors to generate signals representing the position of the track on the disk. In one embodiment, a laser diode and three detectors are formed on the same silicon substrate. Sinusoidal metalization is applied to the detectors in the radial direction. The period of the sinusoidal metalization is two times the tracking pitch of the disk. The metalization on the first detector is approximately ninety degrees behind the metalization on the second detector and the metalization on the third detector is approximately ninety degrees ahead of the metalization on the second detector.

Abstract: A polarization detector is described which contains a beam splitter, which disperses an incident light beam into partial beam paths. The partial beams pass though &lgr;/4 wafers and a cholesterol layer and impinge upon detectors. The polarization direction of the incident light beam can be measured by the polarization detector with the aid of the signal level of the detectors.

Abstract: A transmission and reception device, in which the transmission device and the reception device and the input/output end of a glass fiber are disposed optically in series with respect to one another. A laser diode is disposed on a central part of a photosensitive surface and the input/output end of the glass fiber is in turn adjusted in front of its end face. As a result of a cylindrical symmetry of the photosensitive surface and of the laser diode with respect to a fiber axis, a maxima of the coupling curves coincide with the fiber axis, so that a lateral fiber offset leads to only a moderate change in coupling efficiency.

Abstract: A laser radiation source is provided with an array of N individual slave laser diodes in a predetermined surface area. Adjustable power supply networks enable adjustment of the slave laser diodes relative to one another for operation in a stable manner. The slave power supply has a separate power supply network for each slave laser diode. Each of the power supply networks can be adjusted with respect to the current supplied to the respective slave laser diode during a certain operating period. This enables adjusting the slave laser diodes relative to one another. The power supply networks can be connected in parallel and supplied by a common source.

Abstract: In order to improve a laser radiation source comprising an array of N individual slave laser diodes in a predetermined surface area, a slave power supply for the slave laser diodes, a master laser diode for generating a master laser radiation, a master power supply for the master laser diode, an optical coupling device, with which the master laser radiation can be coupled into the individual slave laser diodes in order to operate them at the frequency of the master laser diode in a phase-locked manner, and an optical transformation device which combines the slave laser radiation of the individual slave laser diodes to form a coherent total laser radiation field with essentially plane wave fronts, in such a manner that it is possible as a result of the adjustability of the power supply networks to adjust the slave laser diodes relative to one another and thus operate them in a stable manner in relation to one another it is suggested that the slave power supply have a separate power supply network for each slav

Abstract: An apparatus for producing a chip-substrate connection, in particular by soldering a semiconductor chip on a substrate. The apparatus has a support, on which the substrate is temporarily supported, and a heating device which is provided for forming the chip-substrate connection. The heating device has a radiation source in the form of a laser in the infrared wavelength range. The support is formed by a heat body, which is assigned to the chip-substrate connection and is heated with thermal radiation by the radiation source. A surface of the heat body is coated with a material, in particular a material containing chromium, exhibiting high absorption with respect to the light radiation emitted by the radiation source.

Abstract: A laser component with a laser array and an optical device for shaping the laser beams emitted by the laser array. The optical device comprises a deflection mirror element following the laser array in the beam direction that simultaneously deflects the individual laser beams of the emitted laser array beam from the radiation direction with respectively the same rotational sense parallel to the common plane and perpendicular thereto. The deflection mirror element is composed of a step-shaped light waveguide stack.

Abstract: Process for the production of a waveguide beam converter for shaping a laser beam collection. A plurality of waveguides are produced and arranged in such a way that at least one individual laser beam can be injected into each waveguide. The waveguides are firstly produced on a substrate using planar technology, and subsequently detached from the substrate over a part of their length, starting from their beam exit ends. The free ends are then arranged and fixed in accordance with an intended output beam arrangement of the output laser beam collection.