Patents by Inventor Wesley Natzle

Wesley Natzle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for preparing the surface of a dielectric
    Publication number: 20010016226
    Abstract: This invention relates to a method for improving the chemical and electrical performance characteristics of a dielectric material especially one with high dielectric constant. The method comprises the steps of first obtaining a high dielectric constant material, the material having a degraded upper surface reduced dielectric constant and then modifying the surface chemistry of said upper surface by reacting said upper surface with a reactant. The reaction enables removal of the degraded layer. In a variant of the method, the gas reactant preferentially reacting with upper surface as compared to the bulk.
    Type: Application
    Filed: April 2, 2001
    Publication date: August 23, 2001
    Applicant: International Business Machines Corporation
    Inventors: Wesley Natzle, Peter R. Duncombe, Rajarao Jammy, David E. Kotecki, Robert B. Laibowitz, Chienfan Yu
  • REMOVAL OF POST-RIE POLYMER ON A1/CU METAL LINE
    Publication number: 20010006166
    Abstract: A method for removal of post reactive ion etch sidewall polymer rails on a Al/Cu metal line of a semiconductor or microelectronic composite structure comprising:
    Type: Application
    Filed: December 3, 1998
    Publication date: July 5, 2001
    Inventors: RAVIKUMAR RAMACHANDRAN, WESLEY NATZLE, MARTIN GUTSCHE, HIROYUKI AKATSU, CHIEN YU
  • Method for cleaning the surface of a dielectric
    Patent number: 6054328
    Abstract: This invention relates to a method for improving the chemical and electrical performance characteristics of a high dielectric constant material. The method comprises the steps of first obtaining a barium containing high dielectric constant material, the material having an upper surface and then modifying the surface chemistry of said upper surface by interacting said upper surface with a gas reactant in a closed environment. In a variant of the method, the gas reactant preferentially reacting with upper surface as compared to the bulk.
    Type: Grant
    Filed: December 6, 1996
    Date of Patent: April 25, 2000
    Assignee: International Business Machines Corporation
    Inventors: Peter R. Duncombe, David E. Kotecki, Robert B. Laibowitz, Wesley Natzle, Chienfan Yu
  • Removal of post-RIE polymer on Al/Cu metal line
    Patent number: 5980770
    Abstract: A method for removal of post reactive ion etch sidewall polymer rails on a Al/Cu metal line of a semiconductor or microelectronic composite structure comprising:1) supplying a mixture of an etching gas and an acid neutralizing gas into a vacuum chamber in which said composite structure is supported to form a water soluble material of sidewall polymer rails left behind on the Al/Cu metal line from the RIE process; removing the water soluble material with deionized water; and removing photo-resist from said composite structure by either a water-only plasma process or a chemical down stream etching method; or2) forming a water-only plasma process to strip the photo-resist layer of a semiconductor or microelectronic composite structure previously subjected to a RIE process;supplying a mixture of an etching gas and an acid neutralizing gas into a vacuum chamber on which said structure is supported to form a water soluble material of saidwall polymer rails left behind on the Al/Cu metal line from the RIE process; a
    Type: Grant
    Filed: April 16, 1998
    Date of Patent: November 9, 1999
    Assignees: Siemens Aktiengesellschaft, International Business Machines Corporation
    Inventors: Ravikumar Ramachandran, Wesley Natzle, Martin Gutsche, Hiroyuki Akatsu, Chien Yu