Patents by Inventor Willi Volksen
Willi Volksen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8541301Abstract: In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to a surface of the first layer, where the filling material includes a polymer and at least one additive, where the at least one additive includes at least one of a surfactant, a high molecular weight polymer and a solvent; and after applying the filling material, heating the structure to enable the filling material to at least partially fill the plurality of pores uniformly across an area of the first layer, where heating the structure results in residual filling material being uniformly left on the surface of the first layer.Type: GrantFiled: July 12, 2011Date of Patent: September 24, 2013Assignee: International Business Machines CorporationInventors: Geraud Jean-Michel Dubois, Theo J. Frot, Teddie P. Magbitang, Willi Volksen
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Patent number: 8492239Abstract: In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one first process on the structure; after performing the at least one first process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material; and after removing the filling material from the plurality of pores, performing at least one second process on the structure, where the at least one second process is performed at a third temperature that is greater than the second temperature.Type: GrantFiled: September 4, 2012Date of Patent: July 23, 2013Assignee: International Business Machines CorporationInventors: Robert L. Bruce, Geraud Jean-Michel Dubois, Theo J. Frot, Teddie P. Magbitang, Sampath Purushothaman, David L. Rath, Willi Volksen
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Patent number: 8481164Abstract: A material and an associated method of formation. A self-assembling block copolymer that includes a first block species and a second block species respectively characterized by a volume fraction of F1 and F2 with respect to the self-assembling block copolymer is provided. At least one crosslinkable polymer that is miscible with the second block species is provided. The self-assembling block copolymer and the at least one crosslinkable polymer are combined to form a mixture. The mixture having a volume fraction, F3, of the crosslinkable polymer, a volume fraction, F1A, of the first block species, and a volume fraction, F2A, of the second block species is formed. A material having a predefined morphology where the sum of F2A and F3 were preselected is formed.Type: GrantFiled: April 2, 2008Date of Patent: July 9, 2013Assignee: International Business Machines CorporationInventors: Jennifer Nam Cha, James Lupton Hedrick, Ho-Cheol Kim, Robert Dennis Miller, Willi Volksen
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Patent number: 8481423Abstract: Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.Type: GrantFiled: September 19, 2007Date of Patent: July 9, 2013Assignees: International Business Machines Corporation, Advanced Micro Devices, Inc.Inventors: John C. Arnold, Griselda Bonilla, William J. Cote, Geraud Dubois, Daniel C. Edelstein, Alfred Grill, Elbert Huang, Robert D. Miller, Satya V. Nitta, Sampath Purushothaman, E. Todd Ryan, Muthumanickam Sankarapandian, Terry A. Spooner, Willi Volksen
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Patent number: 8470706Abstract: Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.Type: GrantFiled: September 1, 2012Date of Patent: June 25, 2013Assignees: International Business Machines Corporation, Advanced Micro Devices, Inc.Inventors: John C. Arnold, Griselda Bonilla, William J. Cote, Geraud Dubois, Daniel C. Edelstein, Alfred Grill, Elbert Huang, Robert D. Miller, Satya V. Nitta, Sampath Purushothaman, E. Todd Ryan, Muthumanickam Sankarapandian, Terry A. Spooner, Willi Volksen
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Patent number: 8436062Abstract: Substantially or roughly spherical micellar structures useful in the formation of nanoporous materials by templating are disclosed. A roughly spherical micellar structure is formed by organization of one or more spatially unsymmetric organic amphiphilic molecules. Each of those molecules comprises a branched moiety and a second moiety. The branched moiety can form part of either the core or the surface of the spherical micellar structure, depending on the polarity of the environment. The roughly spherical micellar structures form in a thermosetting polymer matrix. They are employed in a templating process whereby the amphiphilic molecules are dispersed in the polymer matrix, the matrix is cured, and the porogens are then removed, leaving nanoscale pores.Type: GrantFiled: May 4, 2011Date of Patent: May 7, 2013Assignee: International Business Machines CorporationInventors: Jennifer Nam Cha, James Lupton Hedrick, Ho-Cheol Kim, Victor Yee-Way Lee, Teddie Peregrino Magbitang, Robert Dennis Miller, Willi Volksen
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Publication number: 20130056874Abstract: A semiconductor device is accepted at a stage of its fabrication, at which stage the device includes a diffusion-barrier cap-material (DBCM) layer and an intermetal dielectric layer covering the DBCM layer. The DBCM layer is exposed and it is suitable for removal by an etching procedure in a portion of a pattern contained in the intermetal dielectric layer. A silylation treatment is performed on the semiconductor device prior to the etching procedure for removing the DBCM layer. The intermetal dielectric layer of the completed device has surfaces in contact with metal interconnects and metal vias, and it may have an excess of carbon content near at least a portion of the these surfaces.Type: ApplicationFiled: September 6, 2011Publication date: March 7, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Maxime Darnon, Geraud J.-M. Dubois, Sebastian U. Engelmann, Teddie P. Magbitang, Sampath Purushothaman, Muthumanickam Sankarapandian, Willi Volksen
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Patent number: 8389589Abstract: A nanoporous material exhibiting a lamellar structure is disclosed. The material comprises three or more substantially parallel sheets of an organosilicate material, separated by highly porous spacer regions. The distance between the centers of the sheets lies between 1 nm and 50 nm. The highly porous spacer regions may be substantially free of condensed material. For the manufacture of such materials, a process is disclosed in which matrix non-amphiphilic polymeric material and templating polymeric material are dispersed in a solvent, where the templating polymeric material includes a polymeric amphiphilic material. The solvent with the polymeric materials is distributed onto a substrate. Organization is induced in the templating polymeric material. The solvent is removed, leaving the polymeric materials in place. The matrix polymeric material is cured, forming a lamellar structure.Type: GrantFiled: December 18, 2008Date of Patent: March 5, 2013Assignee: International Business Machines CorporationInventors: Jennifer Nam Cha, Geraud Jean-Michel Dubois, James Lupton Hedrick, Ho-Cheol Kim, Victor Yee-Way Lee, Teddie Peregrino Magbitang, Robert Dennis Miller, Willi Volksen
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Publication number: 20130045337Abstract: Porous films are homogeneously and partially (but not completely) filled. A composition (that includes a polymer) is brought into contact with a planar film that has interconnected pores throughout the film. The polymer then partially fills the pores within the film, e.g., in response to being heated. An additional treatment such as heating the polymer and/or applying radiation to the polymer increases the Young's modulus of the film.Type: ApplicationFiled: August 19, 2011Publication date: February 21, 2013Inventors: GERAUD JEAN-MICHEL DUBOIS, THEO J. FROT, WILLI VOLKSEN
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Publication number: 20130017682Abstract: In one exemplary embodiment of the invention, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to a surface of the first layer; after applying the filling material, heating the structure to enable the filling material to at least partially fill the plurality of pores, where heating the structure results in residual filling material being left on the surface of the first layer; and after heating the structure, removing the residual filling material by applying a solvent wash.Type: ApplicationFiled: July 12, 2011Publication date: January 17, 2013Applicant: International Business Machines CorporationInventors: Robert L. Bruce, Geraud Jean-Michel Dubois, Theo J. Frot, Willi Volksen
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Publication number: 20130017688Abstract: In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to a surface of the first layer, where the filling material includes a polymer and at least one additive, where the at least one additive includes at least one of a surfactant, a high molecular weight polymer and a solvent; and after applying the filling material, heating the structure to enable the filling material to at least partially fill the plurality of pores uniformly across an area of the first layer, where heating the structure results in residual filling material being uniformly left on the surface of the first layer.Type: ApplicationFiled: July 12, 2011Publication date: January 17, 2013Applicant: International Business Machines CorporationInventors: Geraud Jean-Michel Dubois, Theo J. Frot, Teddie P. Magbitang, Willi Volksen
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Publication number: 20120329269Abstract: Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure.Type: ApplicationFiled: September 1, 2012Publication date: December 27, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: John C. Arnold, Griselda Bonilla, William J. Cote, Geraud Dubois, Daniel C. Edelstein, Alfred Grill, Elbert Huang, Robert D. Miller, Satya V. Nitta, Sampath Purushothaman, E. Todd Ryan, Muthumanickam Sankarapandian, Terry A. Spooner, Willi Volksen
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Publication number: 20120329273Abstract: In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one first process on the structure; after performing the at least one first process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material; and after removing the filling material from the plurality of pores, performing at least one second process on the structure, where the at least one second process is performed at a third temperature that is greater than the second temperature.Type: ApplicationFiled: September 4, 2012Publication date: December 27, 2012Applicant: International Business Machines CorporationInventors: Robert L. Bruce, Geraud Jean-Michel Dubois, Theo J. Frot, Teddie P. Magbitang, Sampath Purushothaman, David L. Rath, Willi Volksen
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Patent number: 8314005Abstract: In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material.Type: GrantFiled: January 20, 2011Date of Patent: November 20, 2012Assignee: International Business Machines CorporationInventors: Sampath Purushothaman, Geraud Jean-Michel Dubois, Teddie P. Magbitang, Willi Volksen, Theo J. Frot
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Publication number: 20120282784Abstract: In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material.Type: ApplicationFiled: July 19, 2012Publication date: November 8, 2012Applicant: International Business Machines CorporationInventors: Sampath Purushothaman, Geraud Jean-Michel Dubois, Teddie P. Magbitang, Willi Volksen, Theo J. Frot
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Patent number: 8268903Abstract: Substantially or roughly spherical micellar structures useful in the formation of nanoporous materials by templating are disclosed. A roughly spherical micellar structure is formed by organization of one or more spatially unsymmetric organic amphiphilic molecules. Each of those molecules comprises a branched moiety and a second moiety. The branched moiety can form part of either the core or the surface of the spherical micellar structure, depending on the polarity of the environment. The roughly spherical micellar structures form in a thermosetting polymer matrix. They are employed in a templating process whereby the amphiphilic molecules are dispersed in the polymer matrix, the matrix is cured, and the porogens are then removed, leaving nanoscale pores.Type: GrantFiled: May 4, 2011Date of Patent: September 18, 2012Assignee: International Business Machines CorporationInventors: Geraud Jean-Michel Dubois, James Lupton Hedrick, Ho-Cheol Kim, Victor Yee-Way Lee, Teddie Peregrino Magbitang, Robert Dennis Miller, Willi Volksen
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Publication number: 20110245418Abstract: Substantially or roughly spherical micellar structures useful in the formation of nanoporous materials by templating are disclosed. A roughly spherical micellar structure is formed by organization of one or more spatially unsymmetric organic amphiphilic molecules. Each of those molecules comprises a branched moiety and a second moiety. The branched moiety can form part of either the core or the surface of the spherical micellar structure, depending on the polarity of the environment. The roughly spherical micellar structures form in a thermosetting polymer matrix. They are employed in a templating process whereby the amphiphilic molecules are dispersed in the polymer matrix, the matrix is cured, and the porogens are then removed, leaving nanoscale pores.Type: ApplicationFiled: May 4, 2011Publication date: October 6, 2011Inventors: Geraud Jean-Michel Dubois, James Lupton Hedrick, Ho-Cheol Kim, Victor Yee-Way Lee, Teddie Peregrino Magbitang, Robert Dennis Miller, Willi Volksen
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Publication number: 20110245433Abstract: Substantially or roughly spherical micellar structures useful in the formation of nanoporous materials by templating are disclosed. A roughly spherical micellar structure is formed by organization of one or more spatially unsymmetric organic amphiphilic molecules. Each of those molecules comprises a branched moiety and a second moiety. The branched moiety can form part of either the core or the surface of the spherical micellar structure, depending on the polarity of the environment. The roughly spherical micellar structures form in a thermosetting polymer matrix. They are employed in a templating process whereby the amphiphilic molecules are dispersed in the polymer matrix, the matrix is cured, and the porogens are then removed, leaving nanoscale pores.Type: ApplicationFiled: May 4, 2011Publication date: October 6, 2011Inventors: Jennifer Nam Cha, James Lupton Hedrick, Ho-Cheol Kim, Victor Yee-Way Lee, Teddie Peregrino Magbitang, Robert Dennis Miller, Willi Volksen
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Publication number: 20110183525Abstract: In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material.Type: ApplicationFiled: January 20, 2011Publication date: July 28, 2011Applicant: International Business Machines CorporationInventors: Sampath Purushothaman, Geraud Jean-Michel Dubois, Teddie P. Magbitang, Willi Volksen, Theo J. Frot
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Patent number: 7960442Abstract: Substantially or roughly spherical micellar structures useful in the formation of nanoporous materials by templating are disclosed. A roughly spherical micellar structure is formed by organization of one or more spatially unsymmetric organic amphiphilic molecules. Each of those molecules comprises a branched moiety and a second moiety. The branched moiety can form part of either the core or the surface of the spherical micellar structure, depending on the polarity of the environment. The roughly spherical micellar structures form in a thermosetting polymer matrix. They are employed in a templating process whereby the amphiphilic molecules are dispersed in the polymer matrix, the matrix is cured, and the porogens are then removed, leaving nanoscale pores.Type: GrantFiled: April 20, 2005Date of Patent: June 14, 2011Assignee: International Business Machines CorporationInventors: Jennifer Nam Cha, Geraud Jean-Michel Dubois, James Lupton Hedrick, Ho-Cheol Kim, Victor Yee-Way Lee, Teddie Peregrino Magbitang, Robert Dennis Miller, Willi Volksen